专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06727169B1 Method of making conformal lining layers for damascene metallization 有权
标题翻译：制造用于镶嵌金属化的保形衬层的方法
公开(公告)号：US06727169B1
公开(公告)日：2004-04-27
申请号：US09644416
申请日：2000-08-23
申请人： Ivo Raaijmakers , Suvi P. Haukka , Ville A. Saanila , Pekka J. Soininen , Kai-Erik Elers , Ernst H. A. Granneman
发明人： Ivo Raaijmakers , Suvi P. Haukka , Ville A. Saanila , Pekka J. Soininen , Kai-Erik Elers , Ernst H. A. Granneman
IPC分类号： H01L214763
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/45534 , C23C16/45536 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/7681 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.
摘要翻译：提供了集成电路中双镶嵌结构的保形衬里的方法和结构。沟槽和接触通孔形成在绝缘层中。沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。自身端接的金属层因此与氮气反应。接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

2. 发明授权

US07670944B2 Conformal lining layers for damascene metallization 有权
标题翻译：用于镶嵌金属化的保形衬层
公开(公告)号：US07670944B2
公开(公告)日：2010-03-02
申请号：US11511877
申请日：2006-08-28
申请人： Ivo Raaijmakers , Suvi P. Haukka , Ville A. Saanila , Pekka J. Soininen , Kai-Erik Elers , Ernst H.A. Granneman
发明人： Ivo Raaijmakers , Suvi P. Haukka , Ville A. Saanila , Pekka J. Soininen , Kai-Erik Elers , Ernst H.A. Granneman
IPC分类号： H01L21/4763
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/45534 , C23C16/45536 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/7681 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.
摘要翻译：提供了集成电路中双镶嵌结构的保形衬里的方法和结构。沟槽和接触通孔形成在绝缘层中。沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。自身端接的金属层因此与氮气反应。接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

3. 发明授权

US07102235B2 Conformal lining layers for damascene metallization 有权
标题翻译：用于镶嵌金属化的保形衬层
公开(公告)号：US07102235B2
公开(公告)日：2006-09-05
申请号：US10737315
申请日：2003-12-15
申请人： Ivo Raaijmakers , Suvi P. Haukka , Yille A. Saanila , Pekka J. Soininen , Kai-Erik Elers , Ernst H. A. Granneman
发明人： Ivo Raaijmakers , Suvi P. Haukka , Yille A. Saanila , Pekka J. Soininen , Kai-Erik Elers , Ernst H. A. Granneman
IPC分类号： H01L23/52
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/45534 , C23C16/45536 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/7681 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.
摘要翻译：提供了集成电路中双镶嵌结构的保形衬里的方法和结构。沟槽和接触通孔形成在绝缘层中。沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。自身端接的金属层因此与氮气反应。接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

4. 发明授权

US06679951B2 Metal anneal with oxidation prevention 有权
标题翻译：金属退火与氧化预防
公开(公告)号：US06679951B2
公开(公告)日：2004-01-20
申请号：US09991332
申请日：2001-11-13
申请人： Pekka J. Soininen , Kai-Erik Elers , Ernst H. A. Granneman
发明人： Pekka J. Soininen , Kai-Erik Elers , Ernst H. A. Granneman
IPC分类号： C23C2200
CPC分类号： H01L21/321 , H01L21/76877 , H01L21/76883
摘要： The invention relates generally to the prevention of copper oxidation during copper anneal processes. In one aspect of the invention, copper oxidation is prevented by carrying out the anneal in the presence of one or more organic reducing agents.
摘要翻译：本发明一般涉及铜退火工艺中铜氧化的防止。在本发明的一个方面，通过在一种或多种有机还原剂的存在下进行退火来防止铜氧化。

5. 发明授权

US07034397B2 Oxygen bridge structures and methods to form oxygen bridge structures 有权
标题翻译：氧桥结构和形成氧桥结构的方法
公开(公告)号：US07034397B2
公开(公告)日：2006-04-25
申请号：US10696244
申请日：2003-10-28
申请人： Ivo Raaijmakers , Pekka J. Soininen , Kai-Erik Elers
发明人： Ivo Raaijmakers , Pekka J. Soininen , Kai-Erik Elers
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76846 , C23C16/0272 , H01L21/28562 , H01L21/32051 , H01L21/76856 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.
摘要翻译：提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

6. 发明授权

US07465658B2 Oxygen bridge structures and methods to form oxygen bridge structures 有权
标题翻译：氧桥结构和形成氧桥结构的方法
公开(公告)号：US07465658B2
公开(公告)日：2008-12-16
申请号：US11411430
申请日：2006-04-25
申请人： Ivo Raaijmakers , Pekka J. Soininen , Kai-Erik Elers
发明人： Ivo Raaijmakers , Pekka J. Soininen , Kai-Erik Elers
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , C23C16/0272 , H01L21/28562 , H01L21/32051 , H01L21/76856 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.
摘要翻译：提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

7. 发明授权

US06852635B2 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes 有权
标题翻译：在集成电路金属化方案中无障碍沉积阻挡层的方法
公开(公告)号：US06852635B2
公开(公告)日：2005-02-08
申请号：US10731656
申请日：2003-12-08
申请人： Alessandra Satta , Karen Maex , Kai-Erik Elers , Ville Antero Saanila , Pekka Juha Soininen , Suvi P. Haukka
发明人： Alessandra Satta , Karen Maex , Kai-Erik Elers , Ville Antero Saanila , Pekka Juha Soininen , Suvi P. Haukka
IPC分类号： C23C16/02 , C23C16/04 , C23C16/08 , C23C16/32 , C23C16/44 , C23C16/455 , C30B25/02 , H01L21/205 , H01L21/285 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76814 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/32 , C23C16/44 , C23C16/45525 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/76807 , H01L21/76831 , H01L21/76838 , H01L21/76844 , H01L21/76876 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.
摘要翻译：公开了用于选择性沉积在所需材料上的方法。特别地，与导电表面相比，阻隔材料选择性地形成在绝缘表面上。在接触形成和沟槽填充，特别是镶嵌和双镶嵌金属化的情况下，该方法有利地将绝缘表面与阻挡材料连接。选择性形成允许沉积是“无底的”，因此当在绝缘表面上形成阻挡层之后，当另外的导电材料沉积到开口中时，导电材料留在暴露于直接金属 - 金属接触的通孔底部。期望地，通过原子层沉积（ALD）实现选择性沉积，导致开口中的绝缘侧壁的高度保形覆盖。

8. 发明授权

US06482262B1 Deposition of transition metal carbides 有权
标题翻译：过渡金属碳化物沉积
公开(公告)号：US06482262B1
公开(公告)日：2002-11-19
申请号：US09687204
申请日：2000-10-13
申请人： Kai-Erik Elers , Suvi P. Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Suvi P. Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1632
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
摘要翻译：本发明一般涉及沉积过渡金属碳化物薄膜的方法。特别地，本发明涉及通过原子层沉积（ALD）沉积过渡金属碳化物薄膜的方法，其中过渡金属源化合物和碳源化合物交替地提供给基底。公开了各种金属和碳源气体。该方法适用于在半导体制造中形成金属碳化物薄膜，特别是在集成电路内形成薄的，导电的扩散阻挡层。

9. 发明授权

US09217200B2 Modification of nanoimprint lithography templates by atomic layer deposition 有权
标题翻译：通过原子层沉积修改纳米压印光刻模板
公开(公告)号：US09217200B2
公开(公告)日：2015-12-22
申请号：US11963448
申请日：2007-12-21
申请人： Suvi P. Haukka , Kai-Erik Elers
发明人： Suvi P. Haukka , Kai-Erik Elers
IPC分类号： C23C16/00 , C23C16/455 , C23C16/06
CPC分类号： C23C16/45555 , C23C16/06 , C23C16/45525
摘要： Methods of forming thin films on nanopatterning templates, such as nanoimprint lithography (NIL) templates are provided. In some embodiments, an atomic layer deposition (ALD) type process for modifying the surface of a NIL template comprises alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of two or more reactants.
摘要翻译：提供了在纳米图案模板上形成薄膜的方法，例如纳米压印光刻（NIL）模板。在一些实施例中，用于改变NIL模板表面的原子层沉积（ALD）型方法包括交替地并且顺序地将反应空间中的衬底与两种或更多种反应物的气相脉冲接触。

10. 发明授权

US06800552B2 Deposition of transition metal carbides 有权
标题翻译：过渡金属碳化物沉积
公开(公告)号：US06800552B2
公开(公告)日：2004-10-05
申请号：US10246131
申请日：2002-09-17
申请人： Kai-Erik Elers , Suvi P. Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Suvi P. Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1632
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
摘要翻译：本发明一般涉及沉积过渡金属碳化物薄膜的方法。特别地，本发明涉及通过原子层沉积（ALD）沉积过渡金属碳化物薄膜的方法，其中过渡金属源化合物和碳源化合物交替地提供给基底。公开了各种金属和碳源气体。该方法适用于在半导体制造中形成金属碳化物薄膜，特别是在集成电路内形成薄的，导电的扩散阻挡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式