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1. 发明授权

US4590024A Silicon deposition process 失效
标题翻译：硅沉积工艺
公开(公告)号：US4590024A
公开(公告)日：1986-05-20
申请号：US594456
申请日：1984-03-29
申请人： Israel A. Lesk , M. John Rice, Jr. , Kalluri R. Sarma
发明人： Israel A. Lesk , M. John Rice, Jr. , Kalluri R. Sarma
IPC分类号： C30B13/00
CPC分类号： C30B29/06 , C30B13/00
摘要： An improved process is disclosed for the deposition in a reactor vessel of silicon on the interior walls of the reactor vessel and for the subsequent separation of the silicon from those walls. The reactor vessel has a generally rectangular cross section and is formed of a refractory material from which the deposited silicon separates by thermal expansion shear separation during cool down of the vessel and the deposited silicon. To improve the output of the deposition system, a plurality of partitions are provided in the reactor vessel and integral with the reactor walls. These partitions act as additional deposition surfaces, increasing the number of silicon sheets deposited as well as increasing the efficiency of the chemical reaction.
摘要翻译：公开了一种改进的方法，用于沉积在反应器容器的内壁上的硅的反应器容器中，并且随后将硅与这些壁分离。反应器容器具有大致矩形的横截面，并且由耐热材料形成，沉积的硅通过在容器和沉积的硅冷却期间的热膨胀剪切分离而分离。为了提高沉积系统的输出，在反应器容器中提供多个隔板并与反应器壁成一体。这些隔板作为附加的沉积表面，增加沉积的硅片的数量以及提高化学反应的效率。

2. 发明授权

US4309259A High pressure plasma hydrogenation of silicon tetrachloride 失效
标题翻译：高压等离子体氢化四氯化硅
公开(公告)号：US4309259A
公开(公告)日：1982-01-05
申请号：US148094
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr.
发明人： Kalluri R. Sarma , M. John Rice, Jr.
IPC分类号： B01J12/00 , C01B33/107
CPC分类号： C01B33/1071 , B01J12/002 , B01J2219/0894 , Y10S423/10
摘要： A method is disclosed for the plasma hydrogenation of silicon tetrachloride. A high pressure plasma is utilized to effect a reaction of hydrogen and silicon tetrachloride to form trichlorosilane and other hydrogenated silicon chlorides.
摘要翻译：公开了四氯化硅的等离子体氢化的方法。利用高压等离子体进行氢和四氯化硅的反应，形成三氯硅烷和其它氢化氯化硅。

3. 发明授权

US4555303A Oxidation of material in high pressure oxygen plasma 失效
标题翻译：在高压氧等离子体中氧化材料
公开(公告)号：US4555303A
公开(公告)日：1985-11-26
申请号：US656822
申请日：1984-10-02
申请人： Ronald Legge , M. John Rice, Jr. , Kalluri R. Sarma
发明人： Ronald Legge , M. John Rice, Jr. , Kalluri R. Sarma
IPC分类号： B08B7/00 , H01L21/00 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/67069 , B08B7/0035 , Y10S438/906 , Y10S438/935
摘要： A process is disclosed for removing carbonaceous material from a surface in a high pressure oxygen plasma. A surface, such as a surface of a silicon ribbon, having a layer of carbonaceous material thereon is positioned in a high pressure plasma reaction volume. A high pressure rf plasma is generated in which the plasma includes reactive and ionic oxygen species. The reactive oxygen species are directed to and react with the layer of carbonaceous material to oxidize that material. The reaction products of the oxidation step include carbon dioxide and, possibly a non-oxidizing ash material which can easily be removed from the silicon surface.
摘要翻译：公开了从高压氧等离子体中的表面除去碳质材料的方法。在其上具有碳质材料层的表面，例如硅带的表面，位于高压等离子体反应体积中。产生高压rf等离子体，其中等离子体包括反应性和离子氧。活性氧物质被引导并与碳质材料层反应以氧化该材料。氧化步骤的反应产物包括可以容易地从硅表面去除的二氧化碳和可能的非氧化灰分材料。

4. 发明授权

US4321246A Polycrystalline silicon production 失效
标题翻译：多晶硅生产
公开(公告)号：US4321246A
公开(公告)日：1982-03-23
申请号：US148093
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk , Roger G. Nikirk
发明人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk , Roger G. Nikirk
IPC分类号： C01B33/02 , C01B33/107
CPC分类号： C01B33/107 , C01B33/02 , Y10S423/10
摘要： Polycrystalline silicon is produced by a high pressure plasma process. A silicon halide or halosilane is reacted with hydrogen in the presence of a high pressure plasma to deposit silicon on a heated substrate. The effluent from this reaction is collected, the silicon-bearing compounds separated out, and re-introduced to the deposition reaction. The initial silicon bearing compound can be inexpensive silicon tetrachloride. Maximum utilization of all silicon bearing reaction products maximizes polycrystalline silicon production efficiency.
摘要翻译：通过高压等离子体工艺制造多晶硅。在高压等离子体存在下，卤化硅或卤代硅烷与氢反应，以将硅沉积在加热的衬底上。收集该反应的流出物，分离出含硅化合物，并重新引入沉积反应。初始含硅化合物可以是廉价的四氯化硅。所有硅轴承反应产品的最大利用率最大限度地提高了多晶硅的生产效率。

5. 发明授权

US4292342A High pressure plasma deposition of silicon 失效
标题翻译：高压等离子体沉积硅
公开(公告)号：US4292342A
公开(公告)日：1981-09-29
申请号：US148095
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk
发明人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk
IPC分类号： C01B33/02 , C23C14/22 , C23C16/01 , C23C16/513
CPC分类号： C23C14/225 , C23C16/01 , C23C16/513
摘要： Polycrystalline silicon is deposited on the interior surface of a shaped container. The silicon is deposited by reacting hydrogen and a silicon bearing gas in the presence of a high pressure plasma. The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.
摘要翻译：多晶硅沉积在成形容器的内表面上。在高压等离子体存在下，通过使氢和含硅气体反应来沉积硅。硅体通过利用热膨胀剪切应力与成形容器分离。

6. 发明授权

US4370288A Process for forming self-supporting semiconductor film 失效
标题翻译：用于形成自支撑半导体膜的工艺
公开(公告)号：US4370288A
公开(公告)日：1983-01-25
申请号：US207845
申请日：1980-11-18
申请人： M. John Rice, Jr. , Ronald N. Legge
发明人： M. John Rice, Jr. , Ronald N. Legge
IPC分类号： C30B25/18 , C30B33/00 , H01L21/20 , B29C13/00
CPC分类号： C30B33/00 , C30B25/18 , H01L21/0242 , H01L21/02425 , H01L21/02444 , H01L21/02532 , H01L21/0262 , Y10S438/977
摘要： A process is provided for forming a self-supporting semiconductor film or ribbon. A TESS substrate is prepared from a substrate of refractory material having an expansion coefficient different from the expansion coefficient of the semiconductor material. A colloidal suspension of graphite is applied to the substrate to form a thin layer of loosely adherent graphite particles. Over this layer of graphite is deposited a layer of the semiconductor material, the deposition occurring at an elevated temperature. Upon cooling from the deposition temperature, the differential thermal expansion coefficience causes the shearing at the graphite layer and therefore provides for the easy removal of the semiconductor layer from the substrate.
摘要翻译：提供了一种用于形成自支撑半导体膜或带的工艺。从具有与半导体材料的膨胀系数不同的膨胀系数的耐火材料的基材制备TESS基材。将石墨的胶体悬浮液施加到基底上以形成松散粘附的石墨颗粒的薄层。在该层石墨上淀积一层半导体材料，沉积在升高的温度下发生。在从沉积温度冷却时，不同的热膨胀系数导致在石墨层处的剪切，因此提供了从衬底中容易地去除半导体层。

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