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1. 发明授权

US5966193A LCD device having coupling capacitances and shielding films 失效
标题翻译： LCD装置具有耦合电容和屏蔽膜
公开(公告)号：US5966193A
公开(公告)日：1999-10-12
申请号：US891697
申请日：1997-07-11
申请人： Hongyong Zhang , Akira Takenouchi , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Hongyong Zhang , Akira Takenouchi , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/786 , G02F1/1333
CPC分类号： G02F1/136209 , H01L27/1255
摘要： This invention is characterized by providing light shield patterning on a TFT substrate for an active matrix type liquid crystal display device. A liquid crystal display device comprising an active matrix circuit using a TFT having a top gate-type structure. The light-shield film are formed under a semiconductor layer and superposed at least one of the source bus line and the gate bus line. A capacitance is formed by the light-shield film and at least a part of the semiconductor layer with an insulating layer interposed therebetween.
摘要翻译：本发明的特征在于在有源矩阵型液晶显示装置的TFT基板上设置遮光图案。一种液晶显示装置，包括使用具有顶栅型结构的TFT的有源矩阵电路。遮光膜形成在半导体层之下，并且叠加在源极总线和栅极总线中的至少一个上。电容由遮光膜形成，半导体层的至少一部分隔着绝缘层形成。

2. 发明授权

US06835675B2 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06835675B2
公开(公告)日：2004-12-28
申请号：US10316605
申请日：2002-12-10
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2126
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

3. 发明授权

US06599790B1 Laser-irradiation method and laser-irradiation device 失效
公开(公告)号：US06599790B1
公开(公告)日：2003-07-29
申请号：US08799202
申请日：1997-02-13
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2100
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

4. 发明授权

US06455359B1 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06455359B1
公开(公告)日：2002-09-24
申请号：US09298517
申请日：1999-04-22
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2100
CPC分类号： H01L27/1285 , H01L27/1214 , H01L27/1296 , H01L29/66757 , H01L29/66765 , H01L29/78621
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

5. 发明授权

US08842229B2 Thin film transistor substrate, method for producing same, and display device 有权
标题翻译：薄膜晶体管基板，其制造方法以及显示装置
公开(公告)号：US08842229B2
公开(公告)日：2014-09-23
申请号：US13640381
申请日：2011-01-12
申请人： Tadayoshi Miyamoto
发明人： Tadayoshi Miyamoto
IPC分类号： G02F1/136 , H01L27/12
CPC分类号： H01L27/1214 , H01L27/1225
摘要： Disclosed is an active matrix substrate (20a) that includes: an insulating substrate (10a); a first thin film transistor (5a) that is formed on the insulating substrate (10a) and that includes a first oxide semiconductor layer (13a) having a first channel region (Ca); a second thin film transistor (5b) that is formed on the insulating substrate (10a) and that includes a second oxide semiconductor layer (13b) having a second channel region (Cb); and an interlayer insulating film (17) that covers the first oxide semiconductor layer (13a) and the second oxide semiconductor layer (13b). A channel protective film (25), which is formed of a material different from that of the interlayer insulating film (17), is provided between the second oxide semiconductor layer (13b) and the interlayer insulating film (17) on the second channel region (Cb) in the second oxide semiconductor layer (13b).
摘要翻译：公开了一种有源矩阵基板（20a），其包括：绝缘基板（10a）; 第一薄膜晶体管（5a），其形成在所述绝缘基板（10a）上并且包括具有第一沟道区域（Ca）的第一氧化物半导体层（13a）; 第二薄膜晶体管（5b），其形成在所述绝缘基板（10a）上并且包括具有第二沟道区域（Cb）的第二氧化物半导体层（13b）; 和覆盖第一氧化物半导体层（13a）和第二氧化物半导体层（13b）的层间绝缘膜（17）。在第二沟道区域上的第二氧化物半导体层（13b）和层间绝缘膜（17）之间设置由不同于层间绝缘膜（17）的材料形成的沟道保护膜（25）（Cb）在第二氧化物半导体层（13b）中。

6. 发明申请

US20110157113A1 DISPLAY PANEL AND DISPLAY DEVICE USING THE SAME 审中-公开
标题翻译：显示面板和使用该显示面板的显示设备
公开(公告)号：US20110157113A1
公开(公告)日：2011-06-30
申请号：US13062077
申请日：2009-06-04
申请人： Tadayoshi Miyamoto , Katsuyuki Suga , Fumiyoshi Yoshioka , Satomi Hasegawa
发明人： Tadayoshi Miyamoto , Katsuyuki Suga , Fumiyoshi Yoshioka , Satomi Hasegawa
IPC分类号： G09G5/00
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/268 , H01L27/1229 , H01L27/1285
摘要： A display panel (100) is provided which allows optimization of the respective characteristics of different semiconductor elements without incurring an increase in manufacturing cost. The display panel (100) includes: pixel TFTs (11) disposed in a display section (101); scanning driver TFTs (12) disposed in a scanning driver (102); and data driver (13) disposed in a data driver (103). A polysilicon film of the pixel TFTs (11), the scanning driver TFTs (12), and the data driver TFTs (13) is polycrystallized by irradiation of laser light so as to have a crystal growth direction that goes along a scanning direction of the laser light. The pixel TFTs (11) are disposed so that the crystal growth direction of the polysilicon film is substantially perpendicular to the directions of current paths of the pixel TFTs (11). The scanning driver TFTs (12) and the data driver TFTs (13) are so that the crystal growth direction of the polysilicon film is substantially parallel to the directions of current paths of the scanning driver TFTs (12) and the data driver TFTs (13).
摘要翻译：提供了显示面板（100），其允许优化不同半导体元件的相应特性，而不会导致制造成本的增加。显示面板（100）包括：设置在显示部（101）中的像素TFT（11）; 设置在扫描驱动器（102）中的扫描驱动TFT（12）; 和数据驱动器（13），其设置在数据驱动器（103）中。像素TFT（11），扫描驱动器TFT（12）和数据驱动器TFT（13）的多晶硅膜通过激光的照射被多晶化，以具有沿着扫描方向的晶体生长方向激光灯。像素TFT（11）被布置成使得多晶硅膜的晶体生长方向基本上垂直于像素TFT（11）的电流路径的方向。扫描驱动器TFT（12）和数据驱动器TFT（13）使得多晶硅膜的晶体生长方向基本上平行于扫描驱动TFT（12）和数据驱动器TFT（13）的电流路径的方向）。

7. 发明授权

US6013544A Method for fabricating a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US6013544A
公开(公告)日：2000-01-11
申请号：US610227
申请日：1996-03-04
申请人： Naoki Makita , Tadayoshi Miyamoto , Tsukasa Shibuya
发明人： Naoki Makita , Tadayoshi Miyamoto , Tsukasa Shibuya
IPC分类号： H01L21/205 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/84 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02672 , H01L21/02675 , H01L27/1277
摘要： A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed. A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film. Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film. Then, the upper crystalline silicon semiconductor film is removed. By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film. As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced.
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件包括通过利用形成在绝缘衬底上的具有结晶性的硅半导体膜而获得的有源区。通过将用于促进结晶的催化剂元素引入到下部非晶硅半导体膜中，然后对下部非晶硅半导体膜进行热处理，获得结晶硅半导体膜。此后，在所获得的下部结晶硅半导体膜上形成上部非晶硅半导体膜，随后对其进行热处理，以获得上部结晶硅半导体膜。然后，除去上部晶体硅半导体膜。通过该工艺，残留在下结晶硅半导体膜中的催化剂元素移动到上结晶硅半导体膜中。结果，下层结晶硅半导体膜中的催化剂元素的浓度降低。

8. 发明申请

US20120200546A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件，显示器件及其制造方法以及制造半导体器件的方法
公开(公告)号：US20120200546A1
公开(公告)日：2012-08-09
申请号：US13501830
申请日：2010-06-07
申请人： Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
发明人： Tadayoshi Miyamoto , Kazuhide Tomiyasu , Sumio Katoh
IPC分类号： G06F3/038 , H01L21/20 , H01L29/786
CPC分类号： H01L27/14632 , G02F1/13338 , G02F1/136209 , G02F1/1368 , G02F2202/104 , H01L27/1214 , H01L27/14623 , H01L29/78633
摘要： Disclosed is a semiconductor device including plural types of semiconductor elements having structures that have respective thicknesses suitable for their uses formed in the same process. A semiconductor device (100) includes a TFT (40) and a photodiode (50). A gate electrode (110) of the TFT (40) and a light-shielding layer (60) of the photodiode (50) are formed in the same process. However, because the film thickness of the gate electrode (110) is small, the breakage of an island-shaped silicon layer (120), which will be the channel layer, at the edge of the gate electrode (110) can be prevented. Also, because the film thickness of the light-shielding layer (60) is large, the light entering through a surface of a glass substrate (101) on the side opposite from the surface on which the TFT is formed can be reliably blocked by the light-shielding layer (60). Consequently, the detection sensitivity of the photodiode (50) can be increased.
摘要翻译：公开了一种半导体器件，其包括多种类型的半导体元件，其具有在相同工艺中形成的具有适合其用途的各自厚度的结构。半导体器件（100）包括TFT（40）和光电二极管（50）。以相同的工艺形成TFT（40）的栅电极（110）和光电二极管（50）的遮光层（60）。然而，由于栅电极（110）的膜厚小，所以能够防止栅电极（110）的边缘处的作为沟道层的岛状硅层（120）的破损。此外，由于遮光层（60）的膜厚大，因此通过玻璃基板（101）的与形成有TFT的表面相反一侧的表面进入的光可以被可靠地阻挡遮光层（60）。因此，可以增加光电二极管（50）的检测灵敏度。

9. 发明授权

US07859055B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US07859055B2
公开(公告)日：2010-12-28
申请号：US11989287
申请日：2006-06-01
申请人： Hiroshi Matsukizono , Tadayoshi Miyamoto
发明人： Hiroshi Matsukizono , Tadayoshi Miyamoto
IPC分类号： H01L27/12 , H01L33/00
CPC分类号： H01L29/4908 , H01L29/06 , H01L29/66757 , H01L29/78675
摘要： To provide: a thin film transistor which can be operated with a low threshold and has a high transistor withstand voltage; a production method of the thin film transistor; and a semiconductor device, an active matrix substrate, and a display device, each including such a thin film transistor. The present invention is a thin film transistor including a semiconductor layer, a gate insulating film, a gate electrode on a substrate in this order, wherein a cross section of the semiconductor layer has a forward tapered shape; the gate insulating film covers a top surface and a side surface of the semiconductor layer; and the gate insulating film has a multilayer structure including a silicon oxide film on a semiconductor layer side and a film made of a material with a dielectric constant higher than a dielectric constant of silicon oxide on a gate electrode side; the gate insulating film satisfies 0.5≦B/A where a thickness of the gate insulating film on the top surface of the semiconductor layer is defined as A and a thickness of the gate insulating film on the side surface of the semiconductor layer is defined as B.
摘要翻译：提供：可以以低阈值操作并具有高晶体管耐受电压的薄膜晶体管; 薄膜晶体管的制造方法; 以及各自包括这种薄膜晶体管的半导体器件，有源矩阵基板和显示器件。本发明是一种薄膜晶体管，其包括半导体层，栅极绝缘膜，基板上的栅电极，其中半导体层的横截面具有正锥形形状; 栅极绝缘膜覆盖半导体层的顶表面和侧表面; 并且所述栅极绝缘膜具有包括半导体层侧的氧化硅膜的多层结构和由栅电极侧的介电常数高于氧化硅的介电常数的材料构成的膜; 栅绝缘膜满足0.5＆nlE; B / A，其中半导体层的顶表面上的栅极绝缘膜的厚度被定义为A，并且半导体层的侧表面上的栅极绝缘膜的厚度被定义为 B.

10. 发明授权

US06603518B1 Liquid crystal display capable of reducing amount of return light to TFT and manufacturing method therefor 有权
标题翻译：能够减少向TFT返回光量的液晶显示器及其制造方法
公开(公告)号：US06603518B1
公开(公告)日：2003-08-05
申请号：US09618802
申请日：2000-07-18
申请人： Tadayoshi Miyamoto , Toshihiko Degawa
发明人： Tadayoshi Miyamoto , Toshihiko Degawa
IPC分类号： G02F1136
CPC分类号： G02F1/136209 , G02F2202/104
摘要： There is provided a liquid crystal display device, as well as a manufacturing method therefor, capable of preventing characteristic deterioration of TFTs by reducing the amount of return light incident on the TFTs. A light interception thin film 2 is composed of a silicide film formed on a transparent substrate 1 and a polysilicon film formed so as to cover a top of the silicide film, and a polysilicon film 3 is formed so as to cover a top of the light interception thin film 2. Then, by making up a light interception film from the light interception thin film 2 and the polysilicon film 3, the light interception effect on a TFT-use polysilicon layer 5 formed over the light interception film with interposition of the transparent insulation film 4, and enough thermal resistance and adhesion can be obtained in the TFT manufacturing process.
摘要翻译：提供了一种能够通过减少入射到TFT上的返回光量来防止TFT的特性劣化的液晶显示装置及其制造方法。光截取薄膜2由形成在透明基板1上的硅化物膜和形成为覆盖硅化物膜的顶部的多晶硅膜构成，并且形成多晶硅膜3以覆盖光的顶部截取薄膜2.然后，通过从遮光薄膜2和多晶硅薄膜3构成遮光膜，对形成于遮光膜上的TFT用多晶硅层5的遮光效果插入透明绝缘膜4，并且在TFT制造工艺中可以获得足够的热阻和粘附性。

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