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1. 发明授权

US5966193A LCD device having coupling capacitances and shielding films 失效
标题翻译： LCD装置具有耦合电容和屏蔽膜
公开(公告)号：US5966193A
公开(公告)日：1999-10-12
申请号：US891697
申请日：1997-07-11
申请人： Hongyong Zhang , Akira Takenouchi , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Hongyong Zhang , Akira Takenouchi , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/786 , G02F1/1333
CPC分类号： G02F1/136209 , H01L27/1255
摘要： This invention is characterized by providing light shield patterning on a TFT substrate for an active matrix type liquid crystal display device. A liquid crystal display device comprising an active matrix circuit using a TFT having a top gate-type structure. The light-shield film are formed under a semiconductor layer and superposed at least one of the source bus line and the gate bus line. A capacitance is formed by the light-shield film and at least a part of the semiconductor layer with an insulating layer interposed therebetween.
摘要翻译：本发明的特征在于在有源矩阵型液晶显示装置的TFT基板上设置遮光图案。一种液晶显示装置，包括使用具有顶栅型结构的TFT的有源矩阵电路。遮光膜形成在半导体层之下，并且叠加在源极总线和栅极总线中的至少一个上。电容由遮光膜形成，半导体层的至少一部分隔着绝缘层形成。

2. 发明授权

US06172671B2 Active matrix type display device and fabrication method of the same 有权
标题翻译：有源矩阵型显示装置及其制造方法
公开(公告)号：US06172671B2
公开(公告)日：2001-01-09
申请号：US09325260
申请日：1999-06-03
申请人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
发明人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
IPC分类号： G09G500
CPC分类号： G02F1/13454 , H01L27/1214 , H01L27/1259 , H01L27/1288
摘要： There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
摘要翻译：提供一种有源矩阵型显示器，其中具有所需特性的薄膜晶体管选择性地设置在像素矩阵部分和外围驱动电路部分中。在具有同一衬底上的像素矩阵部分和外围驱动电路部分的结构中，通过非自对准工艺形成的源极和漏极区域和通过自对准工艺形成的低浓缩杂质区域的N沟道型薄膜晶体管，在外围驱动电路部分的像素矩阵部分和N沟道驱动器部分中形成对准处理。在周边驱动电路部分的P沟道驱动器部分中形成P型沟道型薄膜晶体管，其中不形成低浓度杂质区，而仅通过自对准工艺形成源极和漏极区。

3. 发明授权

US5923961A Method of making an active matrix type display 失效
标题翻译：制作有源矩阵型显示的方法
公开(公告)号：US5923961A
公开(公告)日：1999-07-13
申请号：US968025
申请日：1997-11-12
申请人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
发明人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/339
CPC分类号： G02F1/13454 , H01L27/1214
摘要： There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
摘要翻译：提供一种有源矩阵型显示器，其中具有所需特性的薄膜晶体管选择性地设置在像素矩阵部分和外围驱动电路部分中。在具有同一衬底上的像素矩阵部分和外围驱动电路部分的结构中，通过非自对准工艺形成的源极和漏极区域和通过自对准工艺形成的低浓缩杂质区域的N沟道型薄膜晶体管，在外围驱动电路部分的像素矩阵部分和N沟道驱动器部分中形成对准处理。在周边驱动电路部分的P沟道驱动器部分中形成P型沟道型薄膜晶体管，其中不形成低浓度杂质区，而仅通过自对准工艺形成源极和漏极区。

4. 发明授权

US06835675B2 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06835675B2
公开(公告)日：2004-12-28
申请号：US10316605
申请日：2002-12-10
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2126
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

5. 发明授权

US6078060A Active matrix display devices and methods of manufacturing the active matrix display devices 失效
标题翻译：有源矩阵显示装置及制造有源矩阵显示装置的方法
公开(公告)号：US6078060A
公开(公告)日：2000-06-20
申请号：US933817
申请日：1997-09-19
申请人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Nobuo Kubo
发明人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Nobuo Kubo
IPC分类号： H01L29/786 , G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/01 , H01L29/04
CPC分类号： G02F1/13454 , H01L27/1214
摘要： The invention provides a peripheral drive circuit integrated active matrix LCD device in which thin-film transistors have different characteristics optimized for individual circuits of the active matrix LCD device. A pixel matrix portion includes thin-film transistors, each having offset gate regions 134 and 136 produced in a non-self-alignment manner, an n-channel driver portion includes thin-film transistors, each having lightly-doped regions 128 and 130 produced in a combination of the non-self-alignment manner and a self-alignment manner, and a p-channel driver portion includes thin-film transistors produced in a self-alignment manner. This construction makes it possible to arrange the thin-film transistors having characteristics required by the individual circuits.
摘要翻译：本发明提供一种外围驱动电路集成有源矩阵LCD器件，其中薄膜晶体管具有针对有源矩阵LCD器件的各个电路优化的不同特性。像素矩阵部分包括薄膜晶体管，每个薄膜晶体管具有以非自对准方式产生的偏移栅极区域134和136，n沟道驱动器部分包括薄膜晶体管，每个薄膜晶体管都具有产生的轻掺杂区域128和130 以非自对准方式和自对准方式的组合，并且p沟道驱动器部分包括以自对准方式制造的薄膜晶体管。这种结构使得可以将具有各个电路所要求的特性的薄膜晶体管布置。

6. 发明授权

US06599790B1 Laser-irradiation method and laser-irradiation device 失效
公开(公告)号：US06599790B1
公开(公告)日：2003-07-29
申请号：US08799202
申请日：1997-02-13
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2100
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

7. 发明授权

US06455359B1 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06455359B1
公开(公告)日：2002-09-24
申请号：US09298517
申请日：1999-04-22
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2100
CPC分类号： H01L27/1285 , H01L27/1214 , H01L27/1296 , H01L29/66757 , H01L29/66765 , H01L29/78621
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

8. 发明授权

US06890839B2 Method and apparatus for laser annealing configurations of a beam 有权
标题翻译：用于激光退火梁的构造的方法和装置
公开(公告)号：US06890839B2
公开(公告)日：2005-05-10
申请号：US10257460
申请日：2002-01-15
申请人： Norihito Kawaguchi , Kenichiro Nishida , Mikito Ishii , Takehito Yagi , Miyuki Masaki , Atsushi Yoshinouchi , Koichiro Tanaka
发明人： Norihito Kawaguchi , Kenichiro Nishida , Mikito Ishii , Takehito Yagi , Miyuki Masaki , Atsushi Yoshinouchi , Koichiro Tanaka
IPC分类号： A61B18/20 , B23K26/06 , B23K26/073 , H01L21/268 , H01S3/00 , H01L21/00 , H01L21/20 , H01L21/26 , H01L21/331
CPC分类号： H01S3/005 , B23K26/0732
摘要： An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.
摘要翻译：本发明的一个目的是提供能够执行均匀的束发射的激光退火方法和装置。通过本发明，可以实现对样品的均匀波束施加，因为可以在具有高斯分布的光束的光学系统中产生线性横截面配置，而通过将光束从即使当来自激光光源的光束的光束图案具有不均匀的强度分布时，通过旋转装置以规定角度的激光光源。

9. 发明授权

US06621636B2 Laser irradiation apparatus and method of laser irradiation 有权
公开(公告)号：US06621636B2
公开(公告)日：2003-09-16
申请号：US10026340
申请日：2001-12-21
申请人： Koichiro Tanaka , Setsuo Nakajima , Takehito Yagi , Mikito Ishii , Kenichiro Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Koichiro Tanaka , Setsuo Nakajima , Takehito Yagi , Mikito Ishii , Kenichiro Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： G02B2710
CPC分类号： G02B27/108 , G02B27/145
摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

10. 发明授权

US6130455A Semiconductor device, thin film transistor having an active crystal layer formed by a line containing a catalyst element 失效
标题翻译：半导体器件，具有由含有催化剂元素的线形成的活性晶体层的薄膜晶体管
公开(公告)号：US6130455A
公开(公告)日：2000-10-10
申请号：US825672
申请日：1997-03-20
申请人： Atsushi Yoshinouchi , Yasuaki Murata
发明人： Atsushi Yoshinouchi , Yasuaki Murata
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786 , H01C29/78
CPC分类号： H01L29/66757 , H01L21/2022
摘要： A semiconductor device includes: a substrate; a line formed on the substrate; and a crystalline semiconductor film containing silicon connected to the line. The crystalline semiconductor film is crystallized by annealing where a constituting material of the line functions as a catalyst.
摘要翻译：半导体器件包括：衬底; 形成在基板上的线; 以及含有与该线连接的硅的结晶半导体膜。结晶半导体膜通过退火结晶，其中线的构成材料用作催化剂。

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