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1. 发明授权

US5426058A Method of manufacturing solid-state imaging device 失效
标题翻译：制造固态成像装置的方法
公开(公告)号：US5426058A
公开(公告)日：1995-06-20
申请号：US230890
申请日：1994-04-20
申请人： Junichi Nakai , Shouichi Ishibe , Tsuyoshi Itoo , Toshihiko Degawa
发明人： Junichi Nakai , Shouichi Ishibe , Tsuyoshi Itoo , Toshihiko Degawa
IPC分类号： H01L21/301 , H01L21/3105 , H01L31/0232 , H01L21/304 , H01L27/14
CPC分类号： H01L31/0232 , H01L21/31051 , H01L27/14627
摘要： The production of a solid-state imaging device includes the steps of: smoothing the surface of a semiconductor substrate by embedding a polymeric or polymerizable material into recessed portions in the surface of the substrate on which a plurality of solid-state imaging devices are formed, forming optical component parts on the substrate, and cutting the substrate along scribe lines that constitute part of the recessed portions.
摘要翻译：固态成像装置的制造包括以下步骤：通过将聚合物或可聚合材料嵌入到其上形成有多个固态成像装置的基板的表面中的凹陷部分中来平滑半导体基板的表面，在基板上形成光学部件，并且沿着构成凹部的一部分的划线切割基板。

2. 发明授权

US06603518B1 Liquid crystal display capable of reducing amount of return light to TFT and manufacturing method therefor 有权
标题翻译：能够减少向TFT返回光量的液晶显示器及其制造方法
公开(公告)号：US06603518B1
公开(公告)日：2003-08-05
申请号：US09618802
申请日：2000-07-18
申请人： Tadayoshi Miyamoto , Toshihiko Degawa
发明人： Tadayoshi Miyamoto , Toshihiko Degawa
IPC分类号： G02F1136
CPC分类号： G02F1/136209 , G02F2202/104
摘要： There is provided a liquid crystal display device, as well as a manufacturing method therefor, capable of preventing characteristic deterioration of TFTs by reducing the amount of return light incident on the TFTs. A light interception thin film 2 is composed of a silicide film formed on a transparent substrate 1 and a polysilicon film formed so as to cover a top of the silicide film, and a polysilicon film 3 is formed so as to cover a top of the light interception thin film 2. Then, by making up a light interception film from the light interception thin film 2 and the polysilicon film 3, the light interception effect on a TFT-use polysilicon layer 5 formed over the light interception film with interposition of the transparent insulation film 4, and enough thermal resistance and adhesion can be obtained in the TFT manufacturing process.
摘要翻译：提供了一种能够通过减少入射到TFT上的返回光量来防止TFT的特性劣化的液晶显示装置及其制造方法。光截取薄膜2由形成在透明基板1上的硅化物膜和形成为覆盖硅化物膜的顶部的多晶硅膜构成，并且形成多晶硅膜3以覆盖光的顶部截取薄膜2.然后，通过从遮光薄膜2和多晶硅薄膜3构成遮光膜，对形成于遮光膜上的TFT用多晶硅层5的遮光效果插入透明绝缘膜4，并且在TFT制造工艺中可以获得足够的热阻和粘附性。

3. 发明授权

US06215150B1 Vertically integrated semiconductor device 失效
标题翻译：垂直集成半导体器件
公开(公告)号：US06215150B1
公开(公告)日：2001-04-10
申请号：US09055214
申请日：1998-04-06
申请人： Toshihiko Degawa
发明人： Toshihiko Degawa
IPC分类号： H01L2976
CPC分类号： H01L29/66666 , H01L29/7827 , H01L29/78642
摘要： A semiconductor device, which is characterized in that a trench (12) is formed in a silicon substrate (11), an element isolation film (1) is formed on an inner surface of said trench (12), and a drain region (7), a channel region (8) and a source region (9) are arranged vertically in a region encircled by said element isolation film (1); and that a gate insulating film (2) is formed inside of these regions (7, 8 and 9) and a gate electrode (4) is formed on an inner side portion of said gate insulating film (2), while a drain electrode (5) or source electrode (13) is formed on an outer side portion of said gate insulating film (2).
摘要翻译：一种半导体器件，其特征在于，在硅衬底（11）中形成沟槽（12），在所述沟槽（12）的内表面上形成元件隔离膜（1），并且漏极区域（7）），沟道区域（8）和源极区域（9）垂直布置在由所述元件隔离膜（1）包围的区域中; 并且在这些区域（7,8和9）的内部形成栅极绝缘膜（2），并且在所述栅极绝缘膜（2）的内侧部分上形成栅电极（4），而漏电极 5）或源电极（13）形成在所述栅极绝缘膜（2）的外侧部分上。

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