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1. 发明申请

US20080283373A1 Assembly of a Microswitch and of an Acoustic Resonator 有权
标题翻译：微型开关和声谐振器的组装
公开(公告)号：US20080283373A1
公开(公告)日：2008-11-20
申请号：US11629586
申请日：2005-06-13
申请人： Grégory Caruyer , Guillaume Bouche , Pascal Ancey
发明人： Grégory Caruyer , Guillaume Bouche , Pascal Ancey
IPC分类号： H01H57/00 , H01H11/00
CPC分类号： B81C1/0015 , B81B3/0021 , B81B2201/032 , B81B2203/0315 , B81B2203/04 , H01H57/00 , H01H2057/006 , H03H9/172 , H03H2009/241 , Y10T29/49105
摘要： The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.
摘要翻译：本发明涉及由包括移动光束（2）的机电微型开关组成的装置。根据本发明，梁的至少一部分（14）形成压电致动器的压电元件。

2. 发明授权

US07038355B2 Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients 有权
标题翻译：可调谐的微谐振器可以通过热膨胀系数的差异而变形
公开(公告)号：US07038355B2
公开(公告)日：2006-05-02
申请号：US10814619
申请日：2004-03-31
申请人： Guillaume Bouche , Pascal Ancey , Grégory Caruyer
发明人： Guillaume Bouche , Pascal Ancey , Grégory Caruyer
IPC分类号： H02N2/00 , H01L41/00
CPC分类号： B81B3/0078 , B81B2201/0271 , B81B2201/032 , B81B2203/0109 , H01G5/16 , H03H9/172 , H03H2009/02181
摘要： A device comprising a resonator formed of a piezoelectric layer sandwiched between two metal electrodes, the resonator being laid on a suspended beam, the device comprising means for deforming said beam by the difference in thermal expansion coefficients.
摘要翻译：一种包括由夹在两个金属电极之间的压电层形成的谐振器的装置，所述谐振器被放置在悬挂梁上，所述装置包括用于使所述光束变形所述热膨胀系数差的装置。

3. 发明授权

US07960900B2 Assembly of a microswitch and of an acoustic resonator 有权
标题翻译：微型开关和声谐振器的组装
公开(公告)号：US07960900B2
公开(公告)日：2011-06-14
申请号：US11629586
申请日：2005-06-13
申请人： Grégory Caruyer , Guillaume Bouche , Pascal Ancey
发明人： Grégory Caruyer , Guillaume Bouche , Pascal Ancey
IPC分类号： H01L41/08
CPC分类号： B81C1/0015 , B81B3/0021 , B81B2201/032 , B81B2203/0315 , B81B2203/04 , H01H57/00 , H01H2057/006 , H03H9/172 , H03H2009/241 , Y10T29/49105
摘要： The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.
摘要翻译：本发明涉及由包括移动光束（2）的机电微型开关组成的装置。根据本发明，梁的至少一部分（14）形成压电致动器的压电元件。

4. 发明授权

US07179392B2 Method for forming a tunable piezoelectric microresonator 有权
标题翻译：形成可调谐压电微谐振器的方法
公开(公告)号：US07179392B2
公开(公告)日：2007-02-20
申请号：US10794527
申请日：2004-03-05
申请人： Philippe Robert , Grégory Caruyer , Pascal Ancey , Guillaume Bouche
发明人： Philippe Robert , Grégory Caruyer , Pascal Ancey , Guillaume Bouche
IPC分类号： H01L41/08
CPC分类号： H03H9/173 , H03H3/04 , H03H2003/0414 , Y10T29/42
摘要： A process for manufacturing a resonator including the steps of: forming on an insulating substrate a first portion of a conductive material and a second portion of another material on the first portion; forming an insulating layer having its upper surface flush with the upper part of the second portion; forming by a succession of depositions and etchings a beam of a conductive material above the second portion, the beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above the beam portion located above the second portion; and removing the second portion.
摘要翻译：一种用于制造谐振器的方法，包括以下步骤：在绝缘基板上形成第一部分上的导电材料的第一部分和另一材料的第二部分; 形成其上表面与所述第二部分的上部齐平的绝缘层; 通过一系列沉积和蚀刻形成第二部分上方的导电材料束，光束端在第二部分的任一侧上的绝缘层上，第二部分的上表面暴露在光束的任一侧上，所述梁上的压电材料的第三部分和位于所述第二部分上方的所述梁部分上方的所述第三部分上的导电材料的第四部分; 并移除第二部分。

5. 发明授权

US07565725B2 Method for forming a variable capacitor 有权
标题翻译：形成可变电容器的方法
公开(公告)号：US07565725B2
公开(公告)日：2009-07-28
申请号：US11512731
申请日：2006-08-30
申请人： Guillaume Bouche , Fabrice Casset , Pascal Ancey
发明人： Guillaume Bouche , Fabrice Casset , Pascal Ancey
IPC分类号： H01G7/00
CPC分类号： H01G5/16 , Y10T29/435 , Y10T29/49002 , Y10T29/4913 , Y10T29/49139 , Y10T29/49147 , Y10T29/49165 , Y10T83/0476 , Y10T83/0505 , Y10T83/051 , Y10T83/0577
摘要： A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.
摘要翻译：一种形成可变电容器的方法，所述可变电容器包括覆盖空腔内部的导电条和位于所述空腔上方的柔性导电膜，所述空腔根据以下步骤形成：在所述基板中形成凹部; 将可延展材料放置在凹槽中; 在凹部的水平处具有抵靠基板的印模，以使可延展材料的上部具有期望的形状; 硬化可延展材料; 并移除邮票。

6. 发明申请

US20090140384A1 PROCESS FOR OBTAINING A THIN, INSULATING, SOFT MAGNETIC FILM OF HIGH MAGNETIZATION, CORRESPONDING FILM AND CORRESPONDING INTEGRATED CIRCUIT 审中-公开
标题翻译：获得高磁化，相关膜和相关电路的薄膜，绝缘软磁膜的方法
公开(公告)号：US20090140384A1
公开(公告)日：2009-06-04
申请号：US12367812
申请日：2009-02-09
申请人： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
发明人： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
IPC分类号： H01L27/08 , B32B15/00 , H01F1/01 , C01G49/02
CPC分类号： H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
摘要： A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.
摘要翻译：薄的软磁膜将高磁化强度与绝缘特性相结合。该薄膜通过浸渍在非晶基底中的富铁铁磁性纳米晶粒进行氮化而形成。然后进行非晶衬底的选择性氧化。结果是具有高磁化强度的薄而绝缘的软磁膜。可以制造许多类型的集成电路，其包括使用结合有上述薄膜的膜的部件。

7. 发明授权

US07504007B2 Process for obtaining a thin, insulating, soft magnetic film of high magnetization 有权
标题翻译：用于获得高磁化强度薄的绝缘软磁膜的工艺
公开(公告)号：US07504007B2
公开(公告)日：2009-03-17
申请号：US11189028
申请日：2005-07-25
申请人： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
发明人： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
IPC分类号： C23C14/35 , C23C16/00
CPC分类号： H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
摘要： A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.
摘要翻译：薄的软磁膜将高磁化强度与绝缘特性相结合。该薄膜通过浸渍在非晶基底中的富铁铁磁性纳米晶粒进行氮化而形成。然后进行非晶衬底的选择性氧化。结果是具有高磁化强度的薄而绝缘的软磁膜。可以制造许多类型的集成电路，其包括使用结合有上述薄膜的膜的部件。

8. 发明申请

US20060082390A1 Process for obtaining a thin, insulating, soft magnetic film of high magnetization 有权
公开(公告)号：US20060082390A1
公开(公告)日：2006-04-20
申请号：US11189028
申请日：2005-07-25
申请人： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
发明人： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
IPC分类号： G01N30/86 , H03K5/00 , H03K9/00
CPC分类号： H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
摘要： A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.

9. 发明申请

US20050001698A1 Electronic component having a resonator and fabrication process 有权
标题翻译：具有谐振器和制造工艺的电子部件
公开(公告)号：US20050001698A1
公开(公告)日：2005-01-06
申请号：US10815472
申请日：2004-04-01
申请人： Guillaume Bouche , Nick Smears , Pascal Ancey , Gregory Caruyer
发明人： Guillaume Bouche , Nick Smears , Pascal Ancey , Gregory Caruyer
IPC分类号： H01L27/20 , H03H9/15 , H03H9/58
CPC分类号： H03H9/586 , H03H2003/0428 , H03H2003/0435 , H03H2003/0471
摘要： An electronic component (1) includes a substrate (2) and at least two piezoelectric resonators (3, 4) each having an active element (6, 9), a lower electrode (5, 8) and an upper electrode (7, 10). The lower electrode (5) of the first resonator (3) is made of a material that is different from that of the lower electrode (8) of the second resonator (4) such that the resonators exhibit different resonance frequencies.
摘要翻译：电子部件（1）包括基板（2）和至少两个各自具有有源元件（6,9），下电极（5,8）和上电极（7,10）的压电谐振器（3,4））。第一谐振器（3）的下电极（5）由不同于第二谐振器（4）的下电极（8）的材料制成，使得谐振器表现出不同的谐振频率。

10. 发明授权

US07858407B2 Microresonator 有权
标题翻译：微谐振器
公开(公告)号：US07858407B2
公开(公告)日：2010-12-28
申请号：US12266471
申请日：2008-11-06
申请人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
发明人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
IPC分类号： H01L21/00 , H02N2/00
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

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