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1. 发明申请

US20090065777A1 Display Device and Manufacturing Method Therefor 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090065777A1
公开(公告)日：2009-03-12
申请号：US12208371
申请日：2008-09-11
申请人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
发明人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78678
摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.
摘要翻译：在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个，并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

2. 发明申请

US20090218575A1 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090218575A1
公开(公告)日：2009-09-03
申请号：US12379662
申请日：2009-02-26
申请人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
发明人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1251 , H01L27/1288 , H01L29/458 , H01L29/66765
摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.
摘要翻译：提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源电极和半导体层之间的界面，漏电极和源电极形成为与每个另一个在半导体层的顶表面之间形成有间隙。

3. 发明授权

US08058654B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08058654B2
公开(公告)日：2011-11-15
申请号：US12379662
申请日：2009-02-26
申请人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
发明人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1251 , H01L27/1288 , H01L29/458 , H01L29/66765
摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.
摘要翻译：提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源极和半导体层之间的界面，漏电极和源电极被形成为与每个另一个在半导体层的顶表面之间形成有间隙。

4. 发明授权

US07952102B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07952102B2
公开(公告)日：2011-05-31
申请号：US12392120
申请日：2009-02-25
申请人： Eiji Oue , Toshio Miyazawa
发明人： Eiji Oue , Toshio Miyazawa
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L31/062 , H01L31/113
CPC分类号： H01L27/1288 , H01L27/1214
摘要： In a display device which forms thin film transistors on a substrate, the thin film transistor includes an n-type thin film transistor and a p-type thin film transistor, a gate electrode of one thin film transistor out of the n-type thin film transistor and the p-type thin film transistor forms a metal layer made of a material different from the gate electrode on a gate-insulation-film side thereof, and an LDD layer is formed over a semiconductor layer of at least one of the n-type thin film transistor and the p-type thin film transistor.
摘要翻译：在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括n型薄膜晶体管和p型薄膜晶体管，n型薄膜中的一个薄膜晶体管的栅电极晶体管和p型薄膜晶体管形成由栅极绝缘膜侧的与栅电极不同的材料制成的金属层，并且LDD层形成在n型晶体管中的至少一个的半导体层上，型薄膜晶体管和p型薄膜晶体管。

5. 发明授权

US07952095B2 Display device and manufacturing method therefor 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07952095B2
公开(公告)日：2011-05-31
申请号：US12208371
申请日：2008-09-11
申请人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
发明人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78678
摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.
摘要翻译：在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个，并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

6. 发明授权

US08817200B2 Liquid crystal display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein the first layer is denser than the second layer 有权
标题翻译：液晶显示装置，包括具有由第一层和第二层形成的阻挡金属的TFT，其中第一层比第二层更致密
公开(公告)号：US08817200B2
公开(公告)日：2014-08-26
申请号：US13028339
申请日：2011-02-16
申请人： Taro Asai , Jun Gotoh , Eiji Oue , Hiroaki Asuma , Katsumi Nakayashiki , Makoto Kurita
发明人： Taro Asai , Jun Gotoh , Eiji Oue , Hiroaki Asuma , Katsumi Nakayashiki , Makoto Kurita
IPC分类号： G02F1/136 , G02F1/1343
CPC分类号： G02F1/13306 , G02F1/136227 , H01L27/1222 , H01L27/124 , H01L27/3248 , H01L27/3276 , H01L29/41733 , H01L29/78666 , H01L29/78675
摘要： A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device.In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.
摘要翻译：与TFT连接的源极或漏极的通孔中的接触电阻降低，从而提高显示装置的操作效率。在通孔中，TFT的源极部分连接到源电极8.源电极8由包括阻挡金属，Al合金82和帽金属83的三层形成。阻挡金属被分割与半导体层接触的下层81a和与Al合金接触的上层81b。通过溅射形成阻挡金属的下层81a，对下层81a进行热处理，然后通过溅射连续地形成基体金属，Al合金82和盖金属83的上层81b。由于与Al合金82接触的阻挡金属的上层81b不被氧化，所以可以防止通孔中的接触电阻的增加。

7. 发明授权

US06956255B2 Semiconductor device and drive circuit using the semiconductor devices 失效
标题翻译：使用半导体器件的半导体器件和驱动电路
公开(公告)号：US06956255B2
公开(公告)日：2005-10-18
申请号：US10289306
申请日：2002-11-07
申请人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
发明人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
IPC分类号： H01L21/331 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L21/8249 , H01L23/367 , H01L27/04 , H01L27/06 , H01L29/73 , H01L29/732 , H01L29/786 , H01L29/80 , H01L39/112
CPC分类号： H01L29/7322 , H01L21/8249 , H01L23/3677 , H01L29/7317 , H01L2224/82 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A high-speed bipolar transistor is provided which is improved in the effect of heat radiation without increasing the substrate capacitance. The heat radiation connection between a base region and a silicon substrate includes a p+ extrinsic base polysilicon electrode and a polysilicon layer buried in an isolation groove with a very thin silicon dioxide side wall. Accordingly, the heat generated at the base is radiated through this path to the silicon substrate. Further, the film thickness of the silicon dioxide on the inner wall of the isolation groove is sufficiently increased compared with previous structures to prevent an increase in the substrate capacitance. Consequently, there can be obtained a bipolar transistor which operates at high speed, and is improved in the effect of heat radiation without increasing the substrate capacitance.
摘要翻译：提供了高速双极晶体管，其在不增加衬底电容的情况下改善了散热的效果。基极区域和硅衬底之间的热辐射连接包括一个非本征基极多晶硅电极和一个埋在具有非常薄的二氧化硅侧壁的隔离槽中的多晶硅层。因此，在基底处产生的热量通过该路径被辐射到硅衬底。此外，与以前的结构相比，隔离槽的内壁上的二氧化硅的膜厚度充分增加，以防止衬底电容的增加。因此，可以获得高速工作的双极晶体管，并且在不增加衬底电容的情况下提高散热的效果。

8. 发明授权

US07671370B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07671370B2
公开(公告)日：2010-03-02
申请号：US11898997
申请日：2007-09-18
申请人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
发明人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
IPC分类号： H01L27/14
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1222 , H01L27/1229 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.
摘要翻译：实现了SELAX-TFT的特性的改善和ELA结晶的生产率。当使用微单晶半导体的薄膜晶体管和使用颗粒状多晶硅半导体的薄膜晶体管形成在单个基板上时，在伪单晶半导体部分中结晶之前的非晶半导体膜的膜厚度大于多晶硅半导体部分。

9. 发明授权

US07524685B2 Manufacturing method of a display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07524685B2
公开(公告)日：2009-04-28
申请号：US11509739
申请日：2006-08-25
申请人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
IPC分类号： H01L21/66
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step which reforms a semiconductor film into a second state in which the semiconductor film possesses elongated crystalline particles by radiating a laser beam to the semiconductor film in a first state, an aggregation detecting step which detects the aggregation of the semiconductor film which is generated in the semiconductor film reforming step, and a defect determination step which determines a product as a defective product when a position of the aggregation is present in the inside of the predetermined region and determines the product as a good product when the position of the aggregation is present outside the predetermined region.
摘要翻译：本发明提供一种显示装置的制造方法，其能够降低归因于硅膜的伪单晶化产生的聚集的显示装置的成品率的降低。显示装置的制造方法包括：半导体膜重整工序，其将第一状态下的半导体膜照射激光，将半导体膜改性为半导体膜具有细长结晶粒子的第二状态，聚集检测步骤，检测在半导体膜重整步骤中产生的半导体膜的聚集，以及缺陷确定步骤，当聚集的位置存在于预定区域的内部时，将产品确定为不合格品，并将产品确定为当聚集的位置存在于预定区域之外时，产品是良好的。

10. 发明申请

US20080070351A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080070351A1
公开(公告)日：2008-03-20
申请号：US11857481
申请日：2007-09-19
申请人： Eiji Oue , Yasukazu Kimura , Daisuke Sonoda , Toshiyuki Matsuura , Takeshi Kuriyagawa
发明人： Eiji Oue , Yasukazu Kimura , Daisuke Sonoda , Toshiyuki Matsuura , Takeshi Kuriyagawa
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/78645
摘要： In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes: a first step of forming a first resist above the substrate so as to be thicker in the first region than in the second region, the first resist covering the first and second regions and having an opening in the third region; a second step of implanting an impurity to only the third semiconductor in the third region using the first resist as a mask; a third step of thinning the first resist so as to form a second resist that covers the first region and has an opening in each of second and third regions; a fourth step of implanting an impurity to the second and third semiconductor films in the second and third regions simultaneously using the second resist as a mask; and a fifth step of implanting an impurity to the first to third semiconductor films in the first to third regions simultaneously.
摘要翻译：在包括在衬底上形成半导体膜的步骤和在衬底的第一区域中向第一半导体膜中的每一个注入杂质的步骤的显示器件制造方法中，在第一区域之外的第二区域中的第二半导体膜区域，以及在第一和第二区域外的第三区域中的第三半导体膜，所述注入步骤包括：第一步骤，在所述衬底上方形成第一抗蚀剂，使其在所述第一区域中比在所述第二区域中更厚，第一抗蚀剂覆盖第一和第二区域并且在第三区域中具有开口; 使用第一抗蚀剂作为掩模将杂质注入第三区域中的第三半导体的第二步骤; 第三步骤，使第一抗蚀剂变薄以形成覆盖第一区域并在第二和第三区域中的每一个具有开口的第二抗蚀剂; 第四步骤，使用第二抗蚀剂作为掩模，将杂质注入第二和第三区域中的第二和第三半导体膜; 以及将第一至第三区域中的第一至第三半导体膜同时注入杂质的第五步骤。

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