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1. 发明申请

US20030042417A1 Electron beam apparatus and device manufacturing method using same 失效
标题翻译：电子束装置及其制造方法
公开(公告)号：US20030042417A1
公开(公告)日：2003-03-06
申请号：US10234152
申请日：2002-09-05
申请人： EBARA CORPORATION
发明人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
IPC分类号： H01J037/28
CPC分类号： B82Y10/00 , G01N23/225 , G01R31/307 , H01J37/242 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24507 , H01J2237/2817
摘要： An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要翻译：提供电子束装置，用于以简单的结构以高通量可靠地测量电位对比度等。用于照射形成有电子束图案的晶片的样品（如晶片）以评估样品的电子束装置包括用于容纳电子束源的电子 - 光学柱，物镜，ExB分离器和次级电子束检测器用于保持样品的阶段，并相对于电子 - 光学柱相对移动样品; 用于容纳舞台并能够在真空气氛中控制其内部的工作室; 用于将样品供应到载物台的装载机; 电压施加机构，用于向样品施加电压，并且能够向物镜的下电极施加至少两个电压; 以及用于测量模具布置在样品上的方向的对准机构。当评估样品时，对载物台移动的方向进行校正，使其与模具的排列方向一致。

2. 发明申请

US20030213893A1 Electron beam apparatus and device manufacturing method using same 有权
标题翻译：电子束装置及其制造方法
公开(公告)号：US20030213893A1
公开(公告)日：2003-11-20
申请号：US10437889
申请日：2003-05-15
申请人： EBARA CORPORATION , KABUSHIKI KAISHA TOSHIBA
发明人： Ichirota Nagahama , Yuichiro Yamazaki , Kenji Watanabe , Masahiro Hatakeyama , Tohru Satake , Nobuharu Noji
IPC分类号： H01J037/285
CPC分类号： H01J37/28 , H01J2237/0044 , H01J2237/2817
摘要： A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.
摘要翻译：提供了一种缺陷检查装置，用于产生较小失真的测试图像，以可靠地观察用于检测缺陷的样品表面。缺陷检测装置包括用于照射样品的一次电子束源，用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜，用于检测二次电子的检测器，以及用于处理的图像处理单元来自检测器的信号。此外，可以提供第二电子源用于发射照射到样品的电子束，其中在用来自第一电子源的一次电子束照射之前，可以用来自第二电子源的电子束照射样品，用于观察例子。还提供了一种装置制造方法，用于使用缺陷检测装置以高吞吐量检查处理装置。

3. 发明申请

US20030207475A1 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 失效
公开(公告)号：US20030207475A1
公开(公告)日：2003-11-06
申请号：US10445826
申请日：2003-05-28
申请人： EBARA CORPORATION , NIKON CORPORATION
发明人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
IPC分类号： H01L021/66
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

4. 发明申请

US20040248329A1 Semiconductor manufacturing apparatus having a built-in inspection apparatus and a device manufacturing method using said manufacturing apparatus 有权
标题翻译：具有内置检查装置的半导体制造装置和使用该制造装置的装置制造方法
公开(公告)号：US20040248329A1
公开(公告)日：2004-12-09
申请号：US10492172
申请日：2004-04-09
申请人： EBARA CORPORATION
发明人： Tohru Satake , Nobuharu Noji
IPC分类号： H01L021/00
CPC分类号： H01L21/67219 , B24B37/005 , G03F7/70616 , G03F7/70991 , H01J37/28 , H01J2237/2817 , H01L21/67288
摘要： According to the present invention, a chemical and mechanical polishing apparatus (100) for a sample such as a wafer includes a built-in inspection apparatus (25) incorporated therein. The polishing apparatus (100) further comprises a load unit (21), a chemical and mechanical polishing unit (22), a cleaning unit (23), a drying unit (24) and an unload unit (26). The chemical and mechanical polishing apparatus (100) receives a sample from a preceding step (107), carries out respective processes for the sample by said respective units disposed within the polishing apparatus (100) and then transfers the processed sample to a subsequent step (109). Sample loading and unloading means and a sample transfer means are no more necessary for transferring the sample between respective units.
摘要翻译：根据本发明，用于诸如晶片的样品的化学和机械抛光装置（100）包括并入其中的内置检查装置（25）。抛光装置（100）还包括加载单元（21），化学和机械抛光单元（22），清洁单元（23），干燥单元（24）和卸载单元（26）。化学和机械抛光装置（100）从前面的步骤（107）接收样品，通过设置在抛光装置（100）内的各个单元对样品进行各自的处理，然后将处理的样品转移到随后的步骤 109）。样品装载和取样装置和样品转移装置不再需要在各个单元之间转移样品。

5. 发明申请

US20040119023A1 Electron beam apparatus and a device manufacturing method by using said electron beam apparatus 失效
标题翻译：电子束装置和使用所述电子束装置的装置制造方法
公开(公告)号：US20040119023A1
公开(公告)日：2004-06-24
申请号：US10731163
申请日：2003-12-10
申请人： EBARA CORPORATION
发明人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
IPC分类号： H01J003/14
CPC分类号： H01J3/10 , B82Y10/00 , B82Y40/00 , G01N23/225 , H01J3/021 , H01J37/063 , H01J37/073 , H01J37/1471 , H01J37/1472 , H01J37/3174 , H01J2237/06316 , H01J2237/2817
摘要： An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
摘要翻译：电子束装置，其中从具有阴极和阳极的电子枪发射的电子束被聚焦并照射到样品上，并且从样品发出的二次电子被引导到检测器中，该装置还包括用于优化照射的装置从电子枪发射到样品上的电子束的优化装置可以是设置在电子枪附近的两级偏转器，其偏转并引导沿特定方向发射的电子束以与光学器件对准电子束装置的轴方向，由于在所述阴极的晶体取向中具有更高水平的特定晶体取向的事实，在特定方向上发射的电子束相对于光轴成一定角度电子束发射与光轴方向不对准。

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