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1. 发明申请

US20030213893A1 Electron beam apparatus and device manufacturing method using same 有权
标题翻译：电子束装置及其制造方法
公开(公告)号：US20030213893A1
公开(公告)日：2003-11-20
申请号：US10437889
申请日：2003-05-15
申请人： EBARA CORPORATION , KABUSHIKI KAISHA TOSHIBA
发明人： Ichirota Nagahama , Yuichiro Yamazaki , Kenji Watanabe , Masahiro Hatakeyama , Tohru Satake , Nobuharu Noji
IPC分类号： H01J037/285
CPC分类号： H01J37/28 , H01J2237/0044 , H01J2237/2817
摘要： A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.
摘要翻译：提供了一种缺陷检查装置，用于产生较小失真的测试图像，以可靠地观察用于检测缺陷的样品表面。缺陷检测装置包括用于照射样品的一次电子束源，用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜，用于检测二次电子的检测器，以及用于处理的图像处理单元来自检测器的信号。此外，可以提供第二电子源用于发射照射到样品的电子束，其中在用来自第一电子源的一次电子束照射之前，可以用来自第二电子源的电子束照射样品，用于观察例子。还提供了一种装置制造方法，用于使用缺陷检测装置以高吞吐量检查处理装置。

2. 发明申请

US20030067298A1 EDDY CURRENT LOSS MEASURING SENSOR, THICKNESS MEASURING SYSTEM, THICKNESS MEASURING METHOD, AND RECORDED MEDIUM 有权
标题翻译： EDDY电流损耗测量传感器，厚度测量系统，厚度测量方法和记录介质
公开(公告)号：US20030067298A1
公开(公告)日：2003-04-10
申请号：US09817147
申请日：2001-03-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Osamu Nagano , Yuichiro Yamazaki , Motosuke Miyoshi , Hisashi Kaneko , Tetsuo Matsuda
IPC分类号： G01B007/06 , G01R033/12
CPC分类号： G01B11/0608 , G01B7/105
摘要： A thickness measuring system comprises: an eddy current loss measuring sensor having an exciting coil for receiving a high frequency current to excite a high frequency magnetic field to excite an eddy current in a conductive film, and a receiving coil for outputting the high frequency current which is influenced by an eddy current loss caused by the eddy current; an impedance analyzer for measuring the variation in impedance of the eddy current loss measuring sensor, the variation in current value of the high frequency current or the variation in phase of the high frequency current on the basis of the high frequency current outputted from the receiving coil; an optical displacement sensor for measuring the distance between the conductive film and the eddy current loss measuring sensor; and a control computer including a thickness calculating part for calculating the thickness of the conductive film on the basis of various measured results of the impedance analyzer and optical displacement sensor, and the eddy current loss measuring sensor further has a ferrite member surrounding the exciting coil and the ferrite member has an opening in the bottom surface portion thereof for allowing the exciting coil to be exposed.
摘要翻译：一种厚度测量系统，包括：具有用于接收高频电流以激发高频磁场以激励导电膜中的涡流的激励线圈的涡流损耗测量传感器，以及用于输出高频电流的接收线圈，受涡流引起的涡流损耗的影响; 阻抗分析器，用于根据从接收线圈输出的高频电流来测量涡流损耗测量传感器的阻抗变化，高频电流的电流值的变化或高频电流的相位变化 ; 用于测量导电膜和涡流损耗测量传感器之间的距离的光学位移传感器; 以及控制计算机，其包括基于阻抗分析器和光学位移传感器的各种测量结果计算导电膜的厚度的厚度计算部分，并且涡流损耗测量传感器还具有围绕励磁线圈的铁氧体部件，铁氧体部件在其底面部分具有允许激励线圈露出的开口。

3. 发明申请

US20010025925A1 Charged particle beam system and pattern slant observing method 失效
标题翻译：带电粒子束系统和模式倾斜观测方法
公开(公告)号：US20010025925A1
公开(公告)日：2001-10-04
申请号：US09816468
申请日：2001-03-26
申请人： Kabushiki Kaisha Toshiba
发明人： Hideaki Abe , Yuichiro Yamazaki , Kazuyoshi Sugihara , Masahiro Inoue
IPC分类号： G21K007/00 , G01N023/00
CPC分类号： G01N23/20 , H01J37/28 , H01J2237/1506 , H01J2237/2813
摘要： A charged particle beam system comprising a charged beam source, a condenser lens, a scanning deflecting device, an objective lens and a secondary electron detector further comprises a slant observing deflecting device arranged between the objective lens and a sample. The slant observing deflecting device deflects charged particle beams immediately before the surface of the sample, to cause the charged particle beams to be slantingly incident on the sample. The deflection angle of the charged particle beams is controlled by a DC current component which is inputted to the slant observing deflecting device. The irradiation position shift of the charged particle beams due to the slant deflection is corrected and controlled by feeding an input value of the slant observing deflecting device and the slant angle of the charged particle beams back to the input value of the scanning deflecting device.
摘要翻译：包括充电束源，聚光透镜，扫描偏转装置，物镜和二次电子检测器的带电粒子束系统还包括布置在物镜和样品之间的倾斜观察偏转装置。倾斜的观察偏转装置在样品表面之前使带电粒子束偏转，使带电粒子束倾斜入射到样品上。带电粒子束的偏转角由输入到倾斜观测偏转装置的直流电流分量控制。通过将倾斜观察偏转装置的输入值和带电粒子束的倾斜角反馈回到扫描偏转装置的输入值来校正和控制由于倾斜偏转引起的带电粒子束的照射位置偏移。

4. 发明申请

US20020072012A1 Charged beam exposure method and charged beam exposure apparatus 失效
标题翻译：带电束曝光方法和带电束曝光装置
公开(公告)号：US20020072012A1
公开(公告)日：2002-06-13
申请号：US10075370
申请日：2002-02-15
申请人： Kabushiki Kaisha Toshiba
发明人： Tetsuro Nakasugi , Yuichiro Yamazaki , Hideaki Abe
IPC分类号： G03F009/00 , G03C005/00 , A61N005/00 , G21G005/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.
摘要翻译：带电束曝光方法包括对样品施加电压从而在样品上形成加速电场的步骤，加速从电子枪发射的电子束并用电子扫描样品上形成的对准标记的步骤通过检测器检测从对准标记产生的反向散射电子和二次电子的步骤，基于检测到的信号波形获取对准标记的位置的步骤，消除或减少对准标记的步骤通过改变向样品施加的电压的加速电场，以及基于对准标记的位置的信息，用电子枪发射的电子束曝光图案的步骤。

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