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1. 发明授权

US4322454A Process for regulating to desired values the dimensions of the bubbles of magnetic bubble elements 失效
标题翻译：用于将磁性气泡元件的气泡的尺寸调节到期望值的过程
公开(公告)号：US4322454A
公开(公告)日：1982-03-30
申请号：US190389
申请日：1980-09-24
申请人： Didier Challeton , Jacques Daval , Bernard Ferrand , Hubert Moriceau
发明人： Didier Challeton , Jacques Daval , Bernard Ferrand , Hubert Moriceau
IPC分类号： G11C11/14 , C30B19/00 , C30B29/28 , H01F10/24 , H01F41/28 , B05D5/12
CPC分类号： H01F10/24 , H01F41/28 , Y10S428/90
摘要： Process for regulating to desired values the size of the bubbles of magnetic bubble elements during the manufacture of such elements by liquid phase deposition into a non-magnetic substrate of a ferrimagnetic garnet film of formula:(T.sub.a.sup.1 T.sub.b.sup.2 T.sub.c.sup.3 Ca.sub.d) (Fe.sub.e Ge.sub.g) O.sub.12in which T.sup.1, T.sup.2 and T.sup.3, which differ from one another, represent an element in the series of rare earths, including yttrium, a,b,c and d are numbers such that their sum is substantially equal to 3 and e and f are numbers such that their sum is substantially equal to 5, wherein such elements are produced by using epitaxy baths comprising calcium oxide or carbonate and predetermined quantities of ferric oxide, oxides of elements T.sup.1, T.sup.2 and T.sup.3 and germanium oxide, wherein calcium carbonate or oxide quantity of each epitaxy bath is regulated as a function of the size of the bubbles which it is desired to obtain in the element produced from said bath and wherein the deposition of said element takes place at a temperature t.sub.d selected as a function of the saturation temperature T.sub.s of the bath to obtain a growth velocity adapted to the size of the bubbles which it is desired to obtain, the deposit being made during a time t such that the element obtained has a thickness similar to that of the bubbles obtained.
摘要翻译：通过液相沉积到式（Ta1Tb2Tc3Cad）（FeeGeg）O12的铁磁性石榴石膜的非磁性基底中，将这些元件制造期间的气泡元件气泡的尺寸调节到期望值的方法，其中T1， T2和T3彼此不同，代表了一系列稀土元素，包括钇，a，b，c和d是数字，使得它们的和基本上等于3，e和f是数字，使得它们总和大致等于5，其中通过使用包含氧化钙或碳酸盐和预定量的氧化铁，元素T1，T2和T3的氧化物和氧化锗的外延浴制备这些元素，其中每个外延浴的碳酸钙或氧化物量被调节为在由所述浴产生的元素中希望获得的气泡的尺寸的函数，并且其中所述元素的沉积在选定的温度td下进行 Sa的饱和温度Ts的函数，以获得适合于期望获得的气泡尺寸的生长速度，在时间t内形成沉积物，使得获得的元素的厚度类似于得到气泡。

2. 发明授权

US4698281A Garnet-type magnetic material high faraday rotation magnetic film containing such a material and process for the production thereof 失效
标题翻译：石榴石型磁性材料高法拉第旋转磁性膜含有这种材料及其制造方法
公开(公告)号：US4698281A
公开(公告)日：1987-10-06
申请号：US787062
申请日：1985-10-15
申请人： Marie-Francoise Armand , Jacques Daval , Bernard Ferrand , Hubert Moriceau
发明人： Marie-Francoise Armand , Jacques Daval , Bernard Ferrand , Hubert Moriceau
IPC分类号： C01G49/00 , C30B29/28 , G11B11/10 , G11B11/105 , G11C13/06 , H01F10/24 , H01F41/28 , G11B7/24
CPC分类号： H01F10/245 , H01F41/28 , Y10S428/90
摘要： The invention relates to a magnetic material containing either one or more rare earth elements, chosen from among lutetium, thulium and ytterbium, or yttrium. It also relates to a magnetic film with a high Faraday rotation constituted by a substrate coated with an epitactic layer of a magnetic material of the aforementioned type.The process for the production of such a magnetic film involves the deposition of a garnet film by liquid phase epitaxy on a substrate, use being made of an epitaxy bath containing gadolinium oxide, praseodymium oxide, and at least one oxide of a metal M, bismuth oxide, iron oxide, gallium oxide and/or aluminium oxide and a solvent incorporating lead oxide and boron oxide.
摘要翻译：本发明涉及一种含有一种或多种选自镥，ium和镱或钇中的稀土元素的磁性材料。它还涉及具有高法拉第旋转的磁性膜，其由涂覆有上述类型的磁性材料的中空层的基底构成。用于生产这种磁性膜的方法涉及通过液相外延在基底上沉积石榴石膜，其使用由包含氧化钆，氧化镨和至少一种金属M，铋的氧化物的外延浴制成氧化物，氧化铁，氧化镓和/或氧化铝以及掺入氧化铅和氧化硼的溶剂。

3. 发明授权

US4623423A Process for producing a strain-free monocrystal of a crystalline ferroelectric compound 失效
标题翻译：制备结晶铁电化合物的无应变单晶的方法
公开(公告)号：US4623423A
公开(公告)日：1986-11-18
申请号：US489416
申请日：1983-04-28
申请人： Jean-Jacques Aubert , Bernard Bechevet , Jacques Daval
发明人： Jean-Jacques Aubert , Bernard Bechevet , Jacques Daval
IPC分类号： C30B13/00 , C30B15/00 , C30B15/14 , C30B29/30 , C30B33/00 , C30B33/02 , H01B3/00 , C30B1/02
CPC分类号： C30B15/00 , C30B13/00 , C30B15/14 , C30B29/30 , C30B33/00 , Y10S117/918 , Y10T117/1016 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： The process involves producing a monocrystal from the ferroelectric compound, annealing the monocrystal and cooling the latter in a zero longitudinal temperature gradient. The apparatus comprises means for producing the monocrystal and heating means for annealing the monocrystal in a zero temperature gradient, as well as for cooling the monocrystal in a zero longitudinal temperature gradient after annealing. The strain-free monocrystals may be used in the production of surface wave filters, modulators and optical amplifiers.
摘要翻译：该方法包括从铁电化合物制备单晶，退火单晶并在零纵向温度梯度下冷却单晶。该装置包括用于制造用于在零温度梯度退火单晶的单晶和加热装置的装置，以及用于在退火之后的零纵向温度梯度中冷却单晶。无应变单晶可用于生产表面波滤波器，调制器和光放大器。

4. 发明授权

US4752451A Apparatus for producing a strain-free monocrystal of a crystalline ferroelectric compound 失效
标题翻译：用于制造结晶铁电化合物的无应变单晶的装置
公开(公告)号：US4752451A
公开(公告)日：1988-06-21
申请号：US900777
申请日：1986-08-27
申请人： Jean-Jacques Aubert , Bernard Bechevet , Jacques Daval
发明人： Jean-Jacques Aubert , Bernard Bechevet , Jacques Daval
IPC分类号： C30B13/00 , C30B15/00 , C30B15/14 , C30B29/30 , C30B33/00 , C30B33/02 , H01B3/00 , C30B13/04 , C30B35/00
CPC分类号： C30B15/00 , C30B13/00 , C30B15/14 , C30B29/30 , C30B33/00 , Y10S117/918 , Y10T117/1016 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： The process involves producing a monocrystal from the ferroelectric compound, annealing the monocrystal and cooling the latter in a zero longitudinal temperature gradient. The apparatus comprises means for producing the monocrystal, and heating means for annealing the monocrystal in a zero temperature gradient, as well as for cooling the monocrystal in a zero longitudinal temperature gradient after annealing. The strain-free monocrystals may be used in the production of surface wave filters, modulators and optical amplifiers.
摘要翻译：该方法包括从铁电化合物制备单晶，退火单晶并在零纵向温度梯度下冷却单晶。该装置包括用于制备单晶的装置，以及用于在零温度梯度退火单晶的加热装置，以及在退火之后的零纵向温度梯度中冷却单晶。无应变单晶可用于生产表面波滤波器，调制器和光放大器。

5. 发明授权

US5754516A Microstylus recording device covered by a magnetoresistive multilayer 失效
标题翻译： Microstylus记录装置由磁阻多层覆盖
公开(公告)号：US5754516A
公开(公告)日：1998-05-19
申请号：US762424
申请日：1996-12-09
申请人： Jacques Daval , Bernard Bechevet
发明人： Jacques Daval , Bernard Bechevet
IPC分类号： G11B5/00 , G11B5/127 , G11B5/39 , G11B7/00
CPC分类号： G11B5/3903 , B82Y10/00 , G11B5/00 , G11B5/1278 , G11B5/39 , G11B2005/0021 , Y10S977/865
摘要： Microstylus recording device covered by a magnetoresistive multilayer. According to the invention, a microstylus (12) is covered by a magnetoresistive layer (46).
摘要翻译： Microstylus记录装置由磁阻多层覆盖。根据本发明，微电极（12）被磁阻层（46）覆盖。

6. 发明授权

US5981093A Magneto-optical recording medium and production process 失效
标题翻译：磁光记录介质及生产工艺
公开(公告)号：US5981093A
公开(公告)日：1999-11-09
申请号：US813999
申请日：1997-03-10
申请人： Bernard Bechevet , Jacques Daval , Bruno Valon , Marie-Fran.cedilla.oise Armand
发明人： Bernard Bechevet , Jacques Daval , Bruno Valon , Marie-Fran.cedilla.oise Armand
IPC分类号： G11B11/10 , G11B11/105 , G11B5/66
CPC分类号： G11B11/10586 , G11B11/10582 , Y10S428/90
摘要： A magneto-optical recording medium having a stack of magnetic layers which include at least one rare earth element and at least one transition metal element. At least one of the magnetic layers contain fluorine with an atomic concentration less than 1%. A process for producing a magneto-optical recording medium including magnetic layers. The process includes a step of controlling the Curie temperatures of the magnetic layers by controlling a fluorine atomic concentration of the magnetic layers.
摘要翻译：一种具有包括至少一种稀土元素和至少一种过渡金属元素的磁性层堆叠的磁光记录介质。至少一个磁性层含有原子浓度小于1％的氟。一种用于制造包括磁性层的磁光记录介质的方法。该方法包括通过控制磁性层的氟原子浓度来控制磁性层的居里温度的步骤。

7. 发明授权

US5241758A Process for protecting surfaces against ambient particulate contamination with the aid of blowing elements 失效
标题翻译：保护表面防止带泡沫元素的环境颗粒污染的方法
公开(公告)号：US5241758A
公开(公告)日：1993-09-07
申请号：US690001
申请日：1991-04-23
申请人： Didier Cruz , Jacques Daval , Jean-Pierre Lazzari , Francois Torrecillas
发明人： Didier Cruz , Jacques Daval , Jean-Pierre Lazzari , Francois Torrecillas
IPC分类号： B08B5/02 , B08B17/02 , H01L21/02 , H01L21/677
CPC分类号： H01L21/67784 , B08B17/02 , B08B5/023
摘要： The blowing ramp formed by the blowing elements makes it possible to maintain under an ultra-clean atmosphere the planar services of objects during their transportion or conveying, whilst using a limited air flow; the blowing elements are mainly constituted by a plate 2 having a central orifice 6 facing which is located a pipe 4 supplied with ultra-clean air; the process consists of placing the surface (11) of the object (10) at a distance (d) of approximately 1 mm from the blowing surface (7). The flow of air between these two surfaces is easily regulated in such a way as to be laminar, thus providing protection against ambient particulate contamination, which application may be applied to the conveying of silicon wafers.
摘要翻译：由吹风元件形成的吹风斜坡使得在使用有限的气流的同时，在运输或运输过程中，物体的平面服务可以在超清洁气氛下保持; 吹风元件主要由具有中心孔6的板2构成，中心孔6位于被供应有超净空气的管4上; 该过程包括将物体（10）的表面（11）放置在距离吹风表面（7）大约1mm的距离（d）处。这两个表面之间的空气流易于以层流的方式调节，从而提供防止环境颗粒污染的保护，该应用可以应用于硅晶片的输送。

8. 发明授权

US5112277A Blowing door for ultra-clean confinement container 失效
标题翻译：超声波清洗器集装箱吹风门
公开(公告)号：US5112277A
公开(公告)日：1992-05-12
申请号：US662162
申请日：1991-02-28
申请人： Didier Cruz , Jacques Daval
发明人： Didier Cruz , Jacques Daval
IPC分类号： B01L1/04 , E06B5/00 , E06B7/28 , F24F7/06 , H01L21/677
CPC分类号： H01L21/67757 , Y10S414/135 , Y10S414/139
摘要： The blowing door permits the passage of an object (6) from the interior of a first container (5) to a second container (4) without the respective atmospheres of the interior of these two containers being polluted.The blowing door (2) comprises a pressurized fluid inlet (17), an inner chamber (15) and at least one of its faces is ventilated by means of filter (14) placed between the face (11) and the inner chamber (15). During the opening of the door (2), the face (11) in contact with the external atmosphere is then ventilated, so that polluting particles are not brought into the containers (4, 5) during the closure of the door (2).Application to the treatment of silicon wafers or chips to be used in microelectronics.
摘要翻译：吹风门允许物体（6）从第一容器（5）的内部通过到第二容器（4），而不会使这两个容器的内部的相应气氛被污染。吹风门（2）包括加压流体入口（17），内室（15），并且其表面中的至少一个通过放置在面（11）和内室（15）之间的过滤器（14）通风）。在门（2）的打开期间，与外部大气接触的面（11）然后通风，使得在门（2）关闭期间污染的颗粒不会进入容器（4,5）。应用于微晶电子学中使用的硅片或芯片的处理。

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