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    • 7. 发明授权
    • Multi-channel memory architecture
    • 多通道内存架构
    • US06853557B1
    • 2005-02-08
    • US09665920
    • 2000-09-20
    • Belgacem HabaSayeh KhaliliDonald R. MullenNader Gamini
    • Belgacem HabaSayeh KhaliliDonald R. MullenNader Gamini
    • G11C5/00H05K1/14H05K7/02
    • H05K1/14G11C5/00H05K2201/10159
    • A memory architecture includes a first substrate containing multiple memory devices and a first channel portion extending across the first substrate. The architecture further includes a second substrate containing multiple memory devices and a second channel portion extending across the second substrate. A connector couples the first channel portion to the second channel portion to form a single channel. The connector includes a first slot that receives an edge of the first substrate and a second slot that receives an edge of the second substrate. Another connector has a pair of slots that receive opposite edges of the first and second substrates. The channel portions extend across the substrates in a substantially linear path. Each channel portion includes multiple conductors having lengths that are approximately equal.
    • 存储器架构包括包含多个存储器件的第一衬底和跨越第一衬底延伸的第一沟道部分。 该架构还包括含有多个存储器件的第二衬底和跨越第二衬底延伸的第二沟道部分。 连接器将第一通道部分连接到第二通道部分以形成单一通道。 连接器包括接收第一基板的边缘的第一槽和接收第二基板的边缘的第二槽。 另一连接器具有接收第一和第二基板的相对边缘的一对槽。 通道部分在基本上线性的路径上延伸穿过基板。 每个通道部分包括具有近似相等长度的多个导体。
    • 9. 发明授权
    • Stacked semiconductor module
    • 堆叠式半导体模块
    • US06720643B1
    • 2004-04-13
    • US09792788
    • 2001-02-22
    • Thomas F. FoxSayeh KhaliliBelgacem HabaDavid NguyenRichard WarmkeXingchao Yuan
    • Thomas F. FoxSayeh KhaliliBelgacem HabaDavid NguyenRichard WarmkeXingchao Yuan
    • H01L2302
    • G11C5/02G11C5/04G11C29/08G11C2029/4402H01L23/5382H01L25/0657H01L2924/0002H01L2924/00
    • The semiconductor module is provided that includes a semiconductor housing and a plurality of integrated circuit dies positioned within the housing. The semiconductor module also includes a programmable memory device positioned within the housing and electrically coupled to the plurality of integrated circuit dies. The programmable memory device is programmable to identify the integrated circuit dies that meet a predetermined standard, such as an operating frequency requirement, or a core timing grade. Further, a method is provided for accessing a semiconductor module. The above mentioned housing is provided to enclose the plurality of integrated circuit dies and the programmable memory device. The integrated circuit dies of the plurality of integrated circuit dies that meet a predetermined standard are then identified. The programmable memory device is subsequently programmed to identify the selected integrated circuit dies.
    • 提供了半导体模块,其包括半导体壳体和位于壳体内的多个集成电路模具。 该半导体模块还包括位于壳体内并可电耦合到多个集成电路管芯的可编程存储器件。 可编程存储器件可编程以识别满足预定标准(例如工作频率要求或核心定时等级)的集成电路管芯。 此外,提供了一种用于访问半导体模块的方法。 提供上述壳体以封闭多个集成电路管芯和可编程存储器件。 然后识别满足预定标准的多个集成电路管芯的集成电路管芯。 随后编程可编程存储器件以识别所选择的集成电路管芯。