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1. 发明申请

US20180366307A1 PLASMA ABATEMENT TECHNOLOGY UTILIZING WATER VAPOR AND OXYGEN REAGENT 审中-公开
公开(公告)号：US20180366307A1
公开(公告)日：2018-12-20
申请号：US16110803
申请日：2018-08-23
申请人： Applied Materials, Inc.
发明人： Colin John DICKINSON
IPC分类号： H01J37/32 , B01D53/68
摘要： Implementations of the present disclosure relate to systems and techniques for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. The water and oxygen delivery system comprises a housing that includes a floor and a plurality of sidewalls that define an enclosed region. The water and oxygen delivery system further comprises a cylindrical water tank positioned on the floor, wherein a longitudinal axis of the cylindrical water tank is parallel to a plane defined by the floor and a length of the water tank is 1.5 times or greater than the diameter of the cylindrical water tank. The water and oxygen delivery system further comprises a flow control system positioned within the housing above the cylindrical water tank.

2. 发明申请

US20150255251A1 HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE 有权
标题翻译：霍尔效应增强了电容耦合等离子体源
公开(公告)号：US20150255251A1
公开(公告)日：2015-09-10
申请号：US14199974
申请日：2014-03-06
申请人： Applied Materials, Inc.
发明人： Michael S. COX , Rongping WANG , Brian T. WEST , Roger M. JOHNSON , Colin John DICKINSON
IPC分类号： H01J37/32 , H01J37/16
CPC分类号： H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
摘要： Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
摘要翻译：本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。等离子体源具有平行于第一板的第一板和第二板。电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。在该配置中，产生致密等离子体。

3. 发明申请

US20180318758A1 PLASMA ABATEMENT OF COMPOUNDS CONTAINING HEAVY ATOMS 审中-公开
公开(公告)号：US20180318758A1
公开(公告)日：2018-11-08
申请号：US16030337
申请日：2018-07-09
申请人： Applied Materials, Inc.
发明人： Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
IPC分类号： B01D53/32 , B01J19/08 , B01D53/64 , H01J37/32 , B01D53/70 , B01D53/76 , B01D53/54
CPC分类号： B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
摘要： A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

4. 发明申请

US20180226234A1 PLASMA ABATEMENT TECHNOLOGY UTILIZING WATER VAPOR AND OXYGEN REAGENT 审中-公开
公开(公告)号：US20180226234A1
公开(公告)日：2018-08-09
申请号：US15884028
申请日：2018-01-30
申请人： Applied Materials, Inc.
发明人： Colin John DICKINSON
IPC分类号： H01J37/32 , B01D53/68
CPC分类号： H01J37/32844 , B01D53/32 , B01D53/68 , B01D2251/102 , B01D2257/204 , B01D2257/2066 , B01D2258/0216 , B01D2259/818 , H01J37/32862 , H01J2237/3321 , H01J2237/334 , Y02C20/30
摘要： Implementations of the present disclosure relate to systems and techniques for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. The water and oxygen delivery system comprises a housing that includes a floor and a plurality of sidewalls that define an enclosed region. The water and oxygen delivery system further comprises a cylindrical water tank positioned on the floor, wherein a longitudinal axis of the cylindrical water tank is parallel to a plane defined by the floor and a length of the water tank is 1.5 times or greater than the diameter of the cylindrical water tank. The water and oxygen delivery system further comprises a flow control system positioned within the housing above the cylindrical water tank.

5. 发明申请

US20170173521A1 METHODS FOR TREATING EXHAUST GAS IN A PROCESSING SYSTEM 审中-公开
公开(公告)号：US20170173521A1
公开(公告)日：2017-06-22
申请号：US15449226
申请日：2017-03-03
申请人： APPLIED MATERIALS, INC.
发明人： Colin John DICKINSON , Mehran MOALEM , Daniel O. CLARK
IPC分类号： B01D53/32 , C23C16/44
摘要： Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, a method for treating an exhaust gas in an exhaust conduit of a substrate processing system includes: flowing an exhaust gas and a reagent gas into an exhaust conduit of a substrate processing system; injecting a non-reactive gas into the exhaust conduit to maintain a desired pressure in the exhaust conduit for conversion of the exhaust gas; and forming a plasma from the exhaust gas and reagent gas, subsequent to injecting the non-reactive gas, to convert the exhaust gas to abatable byproduct gases.

6. 发明申请

US20190226083A1 PLASMA FORELINE THERMAL REACTOR SYSTEM 审中-公开
公开(公告)号：US20190226083A1
公开(公告)日：2019-07-25
申请号：US16368170
申请日：2019-03-28
申请人： Applied Materials, Inc.
发明人： Colin John DICKINSON
IPC分类号： C23C16/44 , H01J37/32
摘要： The present disclosure relates to methods and apparatus for treating vacuum processing system exhaust gases. In addition, methods and apparatus for maintenance of foreline plasma reactor subsystems are disclosed. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a vacuum processing system includes a plasma source coupled with a foreline of a process chamber, a treatment agent source coupled with the plasma source, and a downstream trap to cool an exhaust stream and trap particles in the exhaust stream. In some embodiments, multiple foreline plasma reactor subsystems are used with a vacuum processing system, and one foreline plasma reactor subsystem can be isolated and maintained (e.g., cleaned) while exhaust gas treatment continues in another foreline plasma reactor subsystem and processing continues in the vacuum processing system.

7. 发明申请

US20150252473A1 PLASMA FORELINE THERMAL REACTOR SYSTEM 审中-公开
标题翻译：等离子体热力反应器系统
公开(公告)号：US20150252473A1
公开(公告)日：2015-09-10
申请号：US14630631
申请日：2015-02-24
申请人： Applied Materials, Inc.
发明人： Colin John DICKINSON
IPC分类号： C23C16/44 , C23C16/28 , H01J37/32 , C23C16/50
CPC分类号： C23C16/4412 , C23C16/4405 , H01J37/32834 , H01J37/32844 , Y02C20/30
摘要： The present disclosure relates to methods and apparatus for treating vacuum processing system exhaust gases. In addition, methods and apparatus for maintenance of foreline plasma reactor subsystems are disclosed. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a vacuum processing system includes a plasma source coupled with a foreline of a process chamber, a treatment agent source coupled with the plasma source, and a downstream trap to cool an exhaust stream and trap particles in the exhaust stream. In some embodiments, multiple foreline plasma reactor subsystems are used with a vacuum processing system, and one foreline plasma reactor subsystem can be isolated and maintained (e.g., cleaned) while exhaust gas treatment continues in another foreline plasma reactor subsystem and processing continues in the vacuum processing system.
摘要翻译：本公开涉及用于处理真空处理系统废气的方法和装置。另外，公开了用于维护前级等离子体反应器子系统的方法和装置。在一些实施例中，用于处理真空处理系统的前级管线中的废气的装置包括与处理室的前级管线连接的等离子体源，与等离子体源耦合的处理剂源，以及用于冷却排气的下游捕集器在排气流中流和捕获颗粒。在一些实施例中，多个前级等离子体反应器子系统与真空处理系统一起使用，并且一个前级等离子体反应器子系统可以被隔离并保持（例如，清洁），同时废气处理在另一个前级等离子体反应器子系统中继续进行，并且处理在真空中继续处理系统。

8. 发明申请

US20150251133A1 PLASMA ABATEMENT OF COMPOUNDS CONTAINING HEAVY ATOMS 有权
标题翻译：包含重型化合物的等离子体吸收
公开(公告)号：US20150251133A1
公开(公告)日：2015-09-10
申请号：US14638871
申请日：2015-03-04
申请人： Applied Materials, Inc.
发明人： Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
IPC分类号： B01D53/32 , B01D53/64 , B01J19/08 , B01D53/46
CPC分类号： B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
摘要： A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
摘要翻译：描述了用于从处理室中减少含有污染物的化合物的等离子体消除过程。等离子体消除过程采用来自诸如沉积室的处理室的气态前级流出物，并使排出物在放置在前级管路中的等离子体室内反应。血浆将流出物中的化合物解离，将流出物转化为更良性的化合物。减轻试剂可能有助于减轻化合物。减排过程可能是挥发或冷凝减排过程。代表性的挥发减压试剂包括例如CH 4，H 2 O，H 2，NF 3，SF 6，F 2，HCl，HF，Cl 2和HBr。代表性的减压剂包括例如H 2，H 2 O，O 2，N 2，O 3，CO，CO 2，NH 3，N 2 O，CH 4及其组合。

9. 发明公开

US20230290614A1 HEAT SHIELD ASSEMBLIES FOR MINIMIZING HEAT RADIATION TO PUMP OF PROCESS CHAMBER 审中-公开
公开(公告)号：US20230290614A1
公开(公告)日：2023-09-14
申请号：US17690644
申请日：2022-03-09
申请人： Applied Materials, Inc.
发明人： Dinkesh HUDERI SOMANNA , Ala MORADIAN , Colin John DICKINSON , Manjunath SUBBANNA
IPC分类号： H01J37/32 , C23C14/34
CPC分类号： H01J37/32477 , C23C14/34 , H01J2237/332
摘要： Embodiments of heat shield assemblies for a processing chamber are provided herein. In some embodiments, a heat shield assembly for a processing chamber includes: a first shield comprising a circular plate; a second shield coupled to the first shield and in a parallel configuration with the first shield, wherein the second shield has an outer diameter greater than an outer diameter of the first shield and the second shield includes a central opening having a diameter smaller than an outer diameter of the first shield; and a third shield coupled to and in a parallel configuration with the second shield, wherein an outer diameter of the third shield is greater than the diameter of the central opening of the second shield.

10. 发明申请

US20170216767A1 PLASMA ABATEMENT OF COMPOUNDS CONTAINING HEAVY ATOMS 审中-公开
公开(公告)号：US20170216767A1
公开(公告)日：2017-08-03
申请号：US15486938
申请日：2017-04-13
申请人： Applied Materials, Inc.
发明人： Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
IPC分类号： B01D53/32 , B01D53/70 , B01J19/08 , B01D53/76 , H01J37/32 , B01D53/64 , B01D53/54
CPC分类号： B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
摘要： A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

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