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1. 发明申请

US20170200585A1 SOURCE RF POWER SPLIT INNER COIL TO IMPROVE BCD AND ETCH DEPTH PERFORMANCE 审中-公开
公开(公告)号：US20170200585A1
公开(公告)日：2017-07-13
申请号：US15104461
申请日：2015-06-15
申请人： Applied Materials, Inc.
发明人： Rongping WANG , Ruizhe REN , Jon C. FARR , Chethan MANGALORE , Peter DEMONTE , Parthiban BALAKRISHNA
IPC分类号： H01J37/32 , H01F27/28
CPC分类号： H01J37/3211 , H01F27/28 , H01J37/321 , H01J37/32651 , H01J2237/3341 , H01J2237/3344
摘要： Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.

2. 发明申请

US20210375701A1 METHODS AND SYSTEMS FOR PROCESSING A SUBSTRATE 有权
公开(公告)号：US20210375701A1
公开(公告)日：2021-12-02
申请号：US16885514
申请日：2020-05-28
申请人： APPLIED MATERIALS, INC.
发明人： Ramesh GOPALAN , Hemant MUNGEKAR , Guomin MAO , Rongping WANG , Teryl PRATT
IPC分类号： H01L21/66 , H01J37/32
摘要： Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a system for processing a substrate, comprising: a remote plasma source including a supply terminal configured to connect to a power source and an output configured to deliver RF power to a plasma block of the remote plasma source for creating a plasma; and a controller connected to the supply terminal of the remote plasma source and configured to determine, based on a predictive model of the remote plasma source, whether a power at the supply terminal is equal to a predetermined threshold during processing of a substrate, wherein the predictive model includes a correlation of remote plasma performance with delivered RF power at the output, and to control the processing of the substrate based on a determination of the predetermined threshold being met to control processing of the substrate.

3. 发明申请

US20200294769A1 PLASMA IGNITION CIRCUIT 审中-公开
公开(公告)号：US20200294769A1
公开(公告)日：2020-09-17
申请号：US16792562
申请日：2020-02-17
申请人： Applied Materials, Inc.
发明人： Teryl PRATT , Rongping WANG , Guomin MAO , Andy CHUANG
IPC分类号： H01J37/32 , H05H1/36
摘要： A plasma ignition circuit includes a transformer having a primary coil configured to couple an RF power supply. A first secondary coil is configured to couple a remote plasma source (RPS), and a second secondary coil. The plasma ignition circuit further includes a control switch having an input configured to couple the second secondary coil and an output configured to capacitively couple the RPS and a switch controller. The switch controller is configured to upon sensing a secondary RF voltage applied to the second secondary coil in response to an RF voltage applied by RF power supply to the primary coil, enable the control switch to capacitively apply the secondary RF voltage to the RPS to ignite a plasma within the RPS. Upon sensing a drop in plasma impedance when the plasma is ignited, disable the control switch to discontinue applying the secondary RF voltage to the RPS.

4. 发明申请

US20160042916A1 POST-CHAMBER ABATEMENT USING UPSTREAM PLASMA SOURCES 审中-公开
标题翻译：使用UPSTREAM等离子体源的后室退房
公开(公告)号：US20160042916A1
公开(公告)日：2016-02-11
申请号：US14737073
申请日：2015-06-11
申请人： Applied Materials, Inc.
发明人： Rongping WANG
IPC分类号： H01J37/32 , C23C16/511 , C23C16/44 , B08B7/00 , C23C16/50
CPC分类号： C23C16/4412 , C23C16/4405 , H01J37/32357 , H01J37/32422 , H01J37/32449 , H01J37/32834 , H01J37/32844 , Y02C20/30
摘要： Embodiments of the disclosure relate to a remote plasma source for cleaning an exhaust pipe. In one embodiment, an apparatus includes a substrate processing chamber, a pump positioned to evacuate the substrate processing chamber, and an abatement system. The abatement system comprises a plasma gas delivery system positioned between the substrate processing chamber and the pump, the gas delivery system having a first end coupling to the substrate processing chamber and a second end coupling to the pump, a reactor body connected to the gas delivery system through a delivery member, a cleaning gas source connected to the reactor body, and a power source positioned to ionize within the reactor body a cleaning gas from the cleaning gas source. Radicals and species of the cleaning gas react with post-process gases from the substrate processing chamber to convert them into a environmentally and process equipment friendly composition before entering the pump.
摘要翻译：本公开的实施例涉及一种用于清洁排气管的远程等离子体源。在一个实施例中，一种装置包括基板处理室，定位成抽空基板处理室的泵和减排系统。减排系统包括位于基板处理室和泵之间的等离子体气体输送系统，气体输送系统具有连接到基板处理室的第一端和连接到泵的第二端，与气体输送连接的反应器主体系统，通过传送构件，连接到反应器主体的清洁气体源，以及定位成在反应器主体内离开来自清洁气体源的清洁气体的电源。清洁气体的基团和物质与来自基底处理室的后处理气体反应，以在进入泵之前将其转化成环境和加工设备友好的组合物。

5. 发明申请

US20210375601A1 METHODS AND SYSTEMS FOR MONITORING INPUT POWER FOR PROCESS CONTROL IN SEMICONDUCTOR PROCESS SYSTEMS 有权
公开(公告)号：US20210375601A1
公开(公告)日：2021-12-02
申请号：US17125178
申请日：2020-12-17
申请人： APPLIED MATERIALS, INC.
发明人： Ramesh GOPALAN , Hemant MUNGEKAR , Guomin MAO , Rongping WANG , Teryl PRATT
IPC分类号： H01J37/32
摘要： Methods and apparatus for plasma processing are provided herein. For example, apparatus can include a system for plasma processing including a remote plasma source including a supply terminal configured to connect to a power source and an output configured to deliver RF power to a plasma block of the remote plasma source for creating a plasma and a controller configured to control operation of the remote plasma source based on a measured input power at the supply terminal.

6. 发明申请

US20190246481A1 METHOD AND APPARATUS FOR GAS ABATEMENT 审中-公开
公开(公告)号：US20190246481A1
公开(公告)日：2019-08-08
申请号：US16206276
申请日：2018-11-30
申请人： Applied Materials, Inc.
发明人： Rongping WANG , Jibing ZENG , David Muquing HOU , Michael S. COX , Zheng YUAN , James L'HEUREUX
IPC分类号： H05H1/24 , C23C16/507 , H01J37/32 , H05H1/46 , C23C16/44
摘要： Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

7. 发明申请

US20170162370A1 ARCING DETECTION APPARATUS FOR PLASMA PROCESSING 审中-公开
公开(公告)号：US20170162370A1
公开(公告)日：2017-06-08
申请号：US15348579
申请日：2016-11-10
申请人： Applied Materials, Inc.
发明人： Lin ZHANG , Rongping WANG , Jian J. CHEN , Michael S. COX , Andrew V. LE
IPC分类号： H01J37/32
CPC分类号： H01J37/32944 , H01J37/32082 , H01J37/32715
摘要： Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

8. 发明申请

US20150255251A1 HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE 有权
标题翻译：霍尔效应增强了电容耦合等离子体源
公开(公告)号：US20150255251A1
公开(公告)日：2015-09-10
申请号：US14199974
申请日：2014-03-06
申请人： Applied Materials, Inc.
发明人： Michael S. COX , Rongping WANG , Brian T. WEST , Roger M. JOHNSON , Colin John DICKINSON
IPC分类号： H01J37/32 , H01J37/16
CPC分类号： H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
摘要： Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
摘要翻译：本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。等离子体源具有平行于第一板的第一板和第二板。电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。在该配置中，产生致密等离子体。

9. 发明申请

US20170133208A1 HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE, AN ABATEMENT SYSTEM, AND VACUUM PROCESSING SYSTEM 审中-公开
公开(公告)号：US20170133208A1
公开(公告)日：2017-05-11
申请号：US15411711
申请日：2017-01-20
申请人： Applied Materials, Inc.
发明人： Michael S. COX , Rongping WANG , Brian T. WEST , Roger M. JOHNSON , Colin John DICKINSON
IPC分类号： H01J37/32 , H01L21/02
CPC分类号： H01J37/32844 , B01D53/323 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2258/0216 , H01J37/32082 , H01J37/32357 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32669 , H01J37/32825 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/02123 , H01L21/02274 , Y02C20/30
摘要： Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

10. 发明申请

US20170114462A1 HIGH PRODUCTIVITY PECVD TOOL FOR WAFER PROCESSING OF SEMICONDUCTOR MANUFACTURING 审中-公开
公开(公告)号：US20170114462A1
公开(公告)日：2017-04-27
申请号：US15290029
申请日：2016-10-11
申请人： Applied Materials, Inc.
发明人： Lin ZHANG , Xuesong LU , Andrew V. LE , Zheng YUAN , Jang Seok OH , Joseph Jamil FARAH , Rongping WANG
IPC分类号： C23C16/455 , C23C16/50 , C23C16/458 , H01L21/67
CPC分类号： C23C16/45565 , C23C16/458 , C23C16/50 , C23C16/5096 , H01J37/32899 , H01L21/67161 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： Embodiments of the present disclosure generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool includes a plurality of process chambers connected to a transfer chamber and each process chamber may simultaneously process four or more substrates. In order to reduce cost, each process chamber includes a substrate support for supporting four or more substrates, single showerhead disposed over the substrate support, and a single radio frequency power source electrically coupled to the showerhead. The showerhead may include a first surface facing the substrate support and a second surface opposite the first surface. A plurality of gas passages may be formed in the showerhead extending from the first surface to the second surface. Process uniformity is improved by increasing the density of the gas passages from the center of the showerhead to the edge of the showerhead.

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