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1. 发明授权

US06319327B1 MOCVD system 有权
标题翻译： MOCVD系统
公开(公告)号：US06319327B1
公开(公告)日：2001-11-20
申请号：US09624488
申请日：2000-07-24
申请人： Akihiko Tsukada , Akihiko Hiroe , Kouji Shimomura
发明人： Akihiko Tsukada , Akihiko Hiroe , Kouji Shimomura
IPC分类号： C23C1600
CPC分类号： C23C16/4402 , C23C16/405 , C23C16/4481
摘要： Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35° C.
摘要翻译：公开了一种用于在半导体晶片上形成氧化钽膜的MOCVD系统，同时使用五乙氧基钽作为液体原料。在该系统中，原料罐通过具有流量控制单元的上游主管线连接到蒸发单元。蒸发单元通过下游主管线连接到成膜单元的处理室。分隔壁布置成围绕整个系统，以将其与洁净室中的其他空间隔离。原料罐，流量控制单元及其上游主管的一部分在一起保持在恒温隔热箱中，并保持在25〜35℃的温度。

2. 发明申请

US20050115501A1 Processing device and method of maintaining the device 失效
标题翻译：处理装置和维护装置的方法
公开(公告)号：US20050115501A1
公开(公告)日：2005-06-02
申请号：US10503126
申请日：2003-02-07
申请人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
发明人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
IPC分类号： G01F1/00 , C23C16/44 , C23C16/448 , G01F25/00 , G05D7/06 , H01L21/304 , H01L21/31 , C23C16/00
CPC分类号： G05D7/0635 , C23C16/4402 , C23C16/4481 , Y10T137/0419 , Y10T137/4259 , Y10T137/7759
摘要： A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) for bypassing a part of a washing fluid feed passage (32) for feeding washing fluid to a liquid source feed passage (12) and a flowmeter such as an MFM (42), wherein the washing fluid is allowed to flow to the mass flow controller (15) through the MFM (42), and the flow of the washing fluid detected by the MFM (42) is compared with a target flow set in the mass flow controller (15) to check whether the mass flow controller (15) operates normally or not.
摘要翻译：一种使用气化液体源的膜处理装置，其能够确认流量控制设备的流量控制精度，例如质量流量控制器（15），其控制液体源的流动，而不将流量控制设备与管道分离并拆卸管道，包括旁路通道（41），用于旁路用于将洗涤流体供给到液体源供给通道（12）的一部分洗涤流体供给通道（32）和诸如MFM（42）的流量计，其中允许洗涤流体流动通过MFM（42）到质量流量控制器（15），并且将由MFM（42）检测到的洗涤流体的流量与在质量流量控制器（15）中设定的目标流量进行比较，以检查质量流量控制器（15）正常运行。

3. 发明授权

US07367350B2 Processing device and method of maintaining the device 失效
标题翻译：处理装置和维护装置的方法
公开(公告)号：US07367350B2
公开(公告)日：2008-05-06
申请号：US10503126
申请日：2003-02-07
申请人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
发明人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
IPC分类号： G05D7/06
CPC分类号： G05D7/0635 , C23C16/4402 , C23C16/4481 , Y10T137/0419 , Y10T137/4259 , Y10T137/7759
摘要： A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) for bypassing a part of a washing fluid feed passage (32) for feeding washing fluid to a liquid source feed passage (12) and a flowmeter such as an MFM (42), wherein the washing fluid is allowed to flow to the mass flow controller (15) through the MFM (42), and the flow of the washing fluid detected by the MFM (42) is compared with a target flow set in the mass flow controller (15) to check whether the mass flow controller (15) operates normally or not.
摘要翻译：一种使用气化液体源的膜处理装置，其能够确认流量控制设备的流量控制精度，例如质量流量控制器（15），其控制液体源的流动，而不将流量控制设备与管道分离并拆卸管道，包括旁路通道（41），用于旁路用于将洗涤流体供给到液体源供给通道（12）的一部分洗涤流体供给通道（32）和诸如MFM（42）的流量计，其中允许洗涤流体流动通过MFM（42）到质量流量控制器（15），并且将由MFM（42）检测到的洗涤流体的流量与在质量流量控制器（15）中设定的目标流量进行比较，以检查质量流量控制器（15）正常运行。

4. 发明授权

US5600022A Method for recovering chloromethyl methyl ether 失效
标题翻译：氯甲基甲醚的回收方法
公开(公告)号：US5600022A
公开(公告)日：1997-02-04
申请号：US364727
申请日：1994-12-27
申请人： Kiyoto Ando , Akihiko Tsukada , Hiroshi Arataki , Youichi Tamura
发明人： Kiyoto Ando , Akihiko Tsukada , Hiroshi Arataki , Youichi Tamura
IPC分类号： C07C41/34 , C07C43/12 , C08F8/24 , C08F8/26 , C07C41/00
CPC分类号： C07C43/12 , C07C41/01 , C07C41/38 , C08F8/24 , C08F8/26
摘要： In a reaction for introducing chloromethyl groups into an aromatic crosslinked copolymer by reacting chloromethyl methyl ether to the aromatic crosslinked copolymer in the presence of a chloromethylation reaction catalyst, a method for recovering chloromethyl methyl ether from the reaction mixture, which comprises the following steps 1) a step of adding to the reaction mixture an aqueous acid solution which is capable of dissolving the chloromethylation reaction catalyst without decomposing chloromethyl methyl ether, and an extraction solvent which is inert to and miscible with chloromethyl methyl ether and which is capable of swelling the chloromethylated aromatic crosslinked copolymer, 2) a step of contacting hydrogen chloride gas to the reaction mixture and the extract solution from the step 1 to convert decomposition products of chloromethyl methyl ether, to chloromethyl methyl ether, 3) a step of separating the resulting mixture from the step 2 into an extraction solvent layer containing chloromethyl methyl ether and an acid-containing aqueous layer, and 4) a step of separating the chloromethyl methyl ether from the extraction solvent layer separated in the step 3.
摘要翻译：在氯甲基化反应催化剂的存在下，通过使氯甲基甲基醚与芳族交联共聚物反应，将氯甲基引入芳族交联共聚物的反应中，从反应混合物中回收氯甲基甲基醚的方法包括以下步骤1）向反应混合物中加入能够溶解氯甲基化反应催化剂而不分解氯甲基甲基醚的酸性水溶液的步骤，和对氯甲基甲基醚是惰性的且可与氯甲基甲基醚混溶并且能够使氯甲基化芳族化合物溶胀的萃取溶剂交联共聚物，2）使氯化氢气体与反应混合物和步骤1的提取液接触以将氯甲基甲基醚的分解产物转化为氯甲基甲基醚的步骤，3）将所得混合物与步骤 2进入萃取溶剂层除去氯甲基甲基醚和含酸水层，以及4）从步骤3中分离的萃取溶剂层中分离氯甲基甲基醚的步骤。

5. 发明授权

US6042372A Heat treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US6042372A
公开(公告)日：2000-03-28
申请号：US91419
申请日：1998-06-24
申请人： Kazunari Sakata , Tamotsu Tanifuji , Akihiko Tsukada
发明人： Kazunari Sakata , Tamotsu Tanifuji , Akihiko Tsukada
IPC分类号： H01L21/22 , B65G49/07 , C23C16/54 , C30B25/08 , C30B31/10 , C30B31/12 , C30B35/00 , H01L21/00 , H01L21/205 , H01L21/31 , H01L21/324 , H01L21/677
CPC分类号： H01L21/67757 , C23C16/54 , C30B25/08 , C30B31/10 , C30B31/12 , C30B35/005 , H01L21/67109 , Y10S414/138 , Y10S414/139 , Y10S414/14
摘要： A vertical heat treatment apparatus for semiconductor wafers (W) including a heat treating furnace (19) which is heated to 600.degree. C. or higher. In the heat treating furnace (19), the wafers (W) are subjected to batch treatment while they are placed on a boat (16). A preparatory vacuum chamber (102) is airtightly connected to a lower side of the heat treating furnace (19). Disposed in the preparatory vacuum chamber (102) are a horizontal transfer mechanism (201) and a vertical transfer mechanism (202) for transferring the boat (16). The two transfer mechanisms (201 and 202) are supported by support members (29a and 33a) mounted on a mechanical base (28). The preparatory vacuum chamber (102) and the support members (29a and 33a) are airtightly connected to each other by means of bellows.
摘要翻译： PCT No.PCT / JP97 / 03772 Sec。 371日期：1998年6月24日 102（e）日期1998年6月24日PCT 1997年10月20日PCT公布。公开号WO98 / 19334 日期1998年5月7日一种用于半导体晶片（W）的立式热处理装置，其包括加热至600℃或更高的热处理炉（19）。在热处理炉（19）中，将晶片（W）放置在船（16）上进行批处理。准备真空室（102）与热处理炉（19）的下侧气密连接。在准备真空室（102）中设置有水平传送机构（201）和用于传送船（16）的垂直传送机构（202）。两个传送机构（201和202）由安装在机械基座（28）上的支撑构件（29a和33a）支撑。准备真空室（102）和支撑构件（29a和33a）通过波纹管彼此气密地连接。

6. 发明授权

US5951282A Vertical heat treatment apparatus 失效
标题翻译：立式热处理设备
公开(公告)号：US5951282A
公开(公告)日：1999-09-14
申请号：US91420
申请日：1998-06-24
申请人： Kazunari Sakata , Tamotsu Tanifuji , Akihiko Tsukada
发明人： Kazunari Sakata , Tamotsu Tanifuji , Akihiko Tsukada
IPC分类号： H01L21/00 , F27D3/12
CPC分类号： H01L21/67109
摘要： The vertical heat treatment apparatus for semiconductor wafers (W) includes a heat treatment furnace (19). In the heat treatment furnace (19), the wafers (W) are subjected to a batch treatment in a state mounted on a boat (16). To the lower side of the heat treatment furnace (19), a preparatory vacuum chamber (102) is airtightly connected through a manifold (33). The manifold (33) has first and second parts (33a and 33b) separably coupled to each other, which are connected to the heat treatment furnace (19) and the preparatory vacuum chamber (102), respectively. The second part (33b) defines a valve seat on which a lid (22) is seated to cut off the communication between the heat treatment furnace (19) and the preparatory vacuum chamber (102). In a state where the lid (22) is seated on the valve seat to maintain the preparatory vacuum chamber (102) airtight, the heat treatment furnace (19) can be separated together with the first part (33a) of the manifold from the preparatory vacuum chamber (102) and the second part (33b) of the manifold.
摘要翻译： PCT No.PCT / JP97 / 03791 Sec。 371日期：1998年6月24日 102（e）1998年6月24日PCT 1997年10月21日PCT PCT。第WO98 / 19335号公报日期1998年5月7日半导体晶片用立式热处理装置（W）包括热处理炉（19）。在热处理炉（19）中，在安装在船（16）上的状态下对晶片（W）进行批处理。在热处理炉（19）的下侧，准备真空室（102）通过歧管（33）气密连接。歧管（33）具有分别彼此分离地连接到热处理炉（19）和预备真空室（102）的第一和第二部分（33a和33b）。第二部分（33b）限定了一个阀座，在其上安置有盖（22）以截断热处理炉（19）和预备真空室（102）之间的连通。在将盖（22）安置在阀座上以保持预备真空室（102）气密的状态下，热处理炉（19）可与歧管的第一部分（33a）一起从预备真空室（102）和歧管的第二部分（33b）。

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