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1. 发明授权

US07597680B2 Syringe device and method of preparing medicine using the device 失效
标题翻译：注射装置及使用该装置制备药物的方法
公开(公告)号：US07597680B2
公开(公告)日：2009-10-06
申请号：US11883934
申请日：2006-02-08
申请人： Norio Watanabe , Yasuhiko Sato , Kouichi Sugita , Katsuya Taguchi
发明人： Norio Watanabe , Yasuhiko Sato , Kouichi Sugita , Katsuya Taguchi
IPC分类号： A61M37/00 , A61M39/00 , A61M39/10 , A61M25/16 , A61M25/18
CPC分类号： A61J1/2096 , A61J1/201 , A61J1/2013 , A61J1/2051 , A61J1/2065 , A61M5/1782 , A61M2005/3121 , Y10S604/905
摘要： A syringe device and a method of preparing medicine using the device capable of easily and accurately performing operations for mixing and dissolving a lyophilized product into a dissolution liquid before use. A double ended needle assembly and an intermediate holder are fitted to the first cylindrical part of a connection holder, a first syringe in which the dissolution liquid is stored is inserted into the first cylindrical part through the intermediate holder, and a second syringe in which the lyophilized product is stored in a depressurized state is fixedly inserted into the second cylindrical part of the connection holder. First, the intermediate holder is locked by a finger hooking projected piece, the first syringe is pushed into the intermediate holder in the locked state of the double ended needle assembly at an initial position by locking ribs, and the first syringe is unsealed by one end of the double ended needle. Next, the intermediate holder and the double ended needle assembly are pushed into the first cylindrical part by the first syringe, and the second syringe in the second cylindrical part is unsealed by the other end of the double ended needle.
摘要翻译：一种注射器装置和使用该装置的药物的制备方法，其能够容易且准确地进行使用前将冻干品混入并溶解于溶解液中的作业。双端针组件和中间保持器安装在连接保持器的第一圆柱形部分上，其中存储溶解液体的第一注射器通过中间保持器插入第一圆柱形部分，第二注射器中，冻干产品储存在减压状态，固定地插入到连接保持器的第二圆柱形部分中。首先，中间保持器被指钩突起部件锁定，第一注射器通过锁定肋在初始位置处被锁定在双头针组件的锁定状态中，并且第一注射器被一端开封的双针针。接下来，中间保持器和双头针组件通过第一注射器被推入第一圆筒部，第二圆筒部的第二注射器被双头针的另一端开封。

2. 发明授权

US07300884B2 Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法，下层膜形成组合物和半导体器件的制造方法
公开(公告)号：US07300884B2
公开(公告)日：2007-11-27
申请号：US11270621
申请日：2005-11-10
申请人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
发明人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337
摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.
摘要翻译：根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜，下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到下层膜形成下层膜图案。

3. 发明申请

US20060127815A1 Pattern forming method and method of manufacturing semiconductor device 审中-公开
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20060127815A1
公开(公告)日：2006-06-15
申请号：US11296480
申请日：2005-12-08
申请人： Yasuhiko Sato , Yasunobu Onishi
发明人： Yasuhiko Sato , Yasunobu Onishi
IPC分类号： G03F7/00
CPC分类号： G03F7/094 , G03F7/0382 , G03F7/0392 , G03F7/091 , G03F7/093 , G03F7/11 , G03F7/115
摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming a first resist film on a film to be worked formed on a semiconductor substrate, forming a second resist film on the first resist film, forming a resist pattern from the second resist film, forming an overcoat film containing a metal element or a semi-conducting element on the resist pattern, insolubilizing, in a predetermined solvent, a portion of the overcoat film at a predetermined distance from an interface between the overcoat film and the resist pattern, removing, with the solvent, a portion of the overcoat film soluble in the solvent to form an overcoat film pattern, transferring the overcoat film pattern to the first resist film to form a lower-layer resist film pattern, and transferring the lower-layer resist film pattern to the film to be worked to form a pattern on the film.
摘要翻译：根据本发明的一个方面，提供了一种图案形成方法，包括在半导体衬底上形成的待加工膜上形成第一抗蚀剂膜，在第一抗蚀剂膜上形成第二抗蚀剂膜，从第一抗蚀剂图案形成抗蚀剂图案在抗蚀剂图案上形成含有金属元素或半导体元件的外涂膜，在规定的溶剂中不溶解从外涂膜与抗蚀剂之间的界面预定距离的一部分覆盖膜用溶剂除去一部分可溶于溶剂的外涂膜形成外涂膜图案，将覆盖膜图案转印到第一抗蚀剂膜上以形成下层抗蚀剂膜图案，层抗蚀剂膜图案到待加工的膜以在膜上形成图案。

4. 发明申请

US20050152047A1 Combined optical elements 失效
标题翻译：组合光学元件
公开(公告)号：US20050152047A1
公开(公告)日：2005-07-14
申请号：US11034577
申请日：2005-01-13
申请人： Hiroyasu Muto , Hiroaki Fujita , Yasuhiko Sato
发明人： Hiroyasu Muto , Hiroaki Fujita , Yasuhiko Sato
IPC分类号： G02B3/08 , G02B7/02 , G02B9/04 , G11B7/135
CPC分类号： G02B7/02 , G02B9/04 , G11B2007/13727
摘要： A compound optical unit has combined optical elements in which two optical elements having convex optical functional surfaces are joined to each other with the optical functional surfaces facing each other, the optical element being formed of glass. An inner flange adjacent to the optical functional surfaces of each optical element is different in thickness from an outer flange formed outsides the inner flange, the outer flange has a top face formed higher then the optical functional surface, and each of the top faces of the outer flanges are jointed to each other.
摘要翻译：复合光学单元具有组合光学元件，其中具有凸形光学功能表面的两个光学元件彼此接合，光学功能表面彼此面对，光学元件由玻璃形成。与每个光学元件的光学功能表面相邻的内部凸缘的厚度与形成在内部凸缘外侧的外部凸缘的厚度不同，外部凸缘具有比光学功能表面高的顶面，并且，外凸缘相互连接。

5. 发明授权

US06576562B2 Manufacturing method of semiconductor device using mask pattern having high etching resistance 有权
公开(公告)号：US06576562B2
公开(公告)日：2003-06-10
申请号：US10014459
申请日：2001-12-14
申请人： Junko Ohuchi , Yasuhiko Sato , Eishi Shiobara , Hisataka Hayashi , Tokuhisa Ohiwa , Yasunobu Onishi
发明人： Junko Ohuchi , Yasuhiko Sato , Eishi Shiobara , Hisataka Hayashi , Tokuhisa Ohiwa , Yasunobu Onishi
IPC分类号： H01L21302
CPC分类号： H01L21/76808 , H01L21/0271 , H01L21/288 , H01L21/31144 , H01L21/32051
摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

6. 发明授权

US06476389B1 X-ray analyzer having an absorption current calculating section 失效
标题翻译：具有吸收电流计算部的X射线分析装置
公开(公告)号：US06476389B1
公开(公告)日：2002-11-05
申请号：US09523305
申请日：2000-03-10
申请人： Hiroshi Konakawa , Yasuhiko Sato , Seiichi Suzuki
发明人： Hiroshi Konakawa , Yasuhiko Sato , Seiichi Suzuki
IPC分类号： G21K700
CPC分类号： G01N23/225 , H01J37/256
摘要： In quantitative analysis of an element in a specimen in which characteristic X-rays generated from the specimen upon irradiation with an electron beam are detected, absorption current values of the specimen and a reference sample are measured before the final measurement, the value of ratio between thus measured values is determined, and the absorption current value of the specimen measured at the time of final measurement is multiplied by this value of ratio, so as to calculate the irradiation current value thereof, thereby substantially monitoring the irradiation current.
摘要翻译：在检测从电子束照射时从试样产生的特征X射线的试样中的元素的定量分析中，在最终测定前测定试样和基准样品的吸收电流值，由此确定测定值，将最终测定时测定的试样的吸收电流值乘以该比值，从而计算其照射电流值，从而实质上监测照射电流。

7. 发明授权

US06420271B2 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06420271B2
公开(公告)日：2002-07-16
申请号：US09814839
申请日：2001-03-23
申请人： Yasuhiko Sato , Eishi Shiobara , Motoyuki Sato , Yasunobu Onishi , Hiroshi Tomita , Tokuhisa Ohiwa , Junko Ohuchi , Hisataka Hayashi
发明人： Yasuhiko Sato , Eishi Shiobara , Motoyuki Sato , Yasunobu Onishi , Hiroshi Tomita , Tokuhisa Ohiwa , Junko Ohuchi , Hisataka Hayashi
IPC分类号： H01L214763
CPC分类号： H01L21/31144 , G03F7/085 , G03F7/09 , H01L21/3081 , H01L21/32139
摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.
摘要翻译：一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜，促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

8. 发明授权

US5851252A Method of forming mold release film and making a glass optical element 失效
标题翻译：形成脱模膜并制成玻璃光学元件的方法
公开(公告)号：US5851252A
公开(公告)日：1998-12-22
申请号：US798270
申请日：1997-02-11
申请人： Yasuhiko Sato , Hiroaki Fujita
发明人： Yasuhiko Sato , Hiroaki Fujita
IPC分类号： C03B40/02 , C03B11/00 , C03B11/08 , C03C17/22 , C03B40/00 , C03C17/00
CPC分类号： C03C17/22 , C03B11/08 , C03B2215/72 , C03C2217/282 , C03C2218/153 , Y02P40/57
摘要： In a method of forming a mold release film on the surface of a glass blank from which an optical element is made by press molding, a carbon film having a thickness of less than 50 angstroms or, preferably, less than 10 angstroms is formed on the surface of the glass blank, thereby improving the releasability of the mold and the molded article with respect to each other. A glass blank (1) is subjected to ashing with an oxygen plasma so as to remove organic dirt attached to the glass blank (1). Then, plasma cleaning with an argon plasma is effected so as to remove inorganic dirt attached to the glass blank (1). Thereafter, the glass blank (1) is subjected to methane plasma processing such that a carbon film (2) having a thickness of less than 50 angstroms is formed on the surface of the glass blank (1) from which the dirt has been removed.
摘要翻译：在通过压制成型从其制造光学元件的玻璃坯料的表面上形成脱模膜的方法中，形成厚度小于50埃，优选小于10埃的碳膜，从而提高了模具和模制品相对于彼此的脱模性。玻璃坯料（1）用氧等离子体进行灰化，以除去附着在玻璃坯料（1）上的有机污垢。然后，进行氩等离子体的等离子体清洗，以除去附着在玻璃坯料（1）上的无机污垢。此后，对玻璃坯料（1）进行甲烷等离子体处理，使得在去除了污物的玻璃坯料（1）的表面上形成厚度小于50埃的碳膜（2）。

9. 发明授权

US5723174A Method of forming mold release film 失效
标题翻译：脱模膜的形成方法
公开(公告)号：US5723174A
公开(公告)日：1998-03-03
申请号：US798060
申请日：1997-02-11
申请人： Yasuhiko Sato
发明人： Yasuhiko Sato
IPC分类号： C03B40/02 , B29C33/38 , B29C33/56 , B29C33/58 , C03B11/00 , C23C14/06 , C23C14/58 , B05D3/12
CPC分类号： C23C14/5853 , B29C33/56 , B29C33/58 , C23C14/0641 , B29C33/38
摘要： In a method of forming a mold release film on at least molding surfaces of a mold comprising an upper die, a lower die, and a cylindrical die for press molding of an optical element, a TiAlN film is formed on the molding surfaces of the mold and is polished so as to yield a center-line mean roughness of about 1 nm or less, thereby improving the mold in terms of durability, heat resistance, specular characteristic, and the like while improving releasability of the mold and a molded article with respect to each other. A TiAlN film (1) is formed on molding surfaces (31a, 32a) of upper and lower dies (31, 32) by a sputtering technique or the like. Thus formed TiAlN film (1) is polished till its center-line mean roughness becomes about 1 nm. Accordingly, the molding surfaces (31a, 32a) are prevented from being discolored or becoming rough due to heat, whereby the mold can be improved in terms of durability, heat resistance, and the like.
摘要翻译：在至少在包括上模，下模和用于压模成型光学元件的圆柱形模的模具的成形表面上形成脱模膜的方法中，在模具的模制表面上形成TiAlN膜并且抛光，以产生约1nm或更小的中心线平均粗糙度，从而在耐久性，耐热性，镜面特性等方面改进模具，同时提高模具和模制品的脱模性对彼此。通过溅射技术等在上模具和下模具（31,32）的模制表面（31a，32a）上形成TiAlN薄膜（1）。将如此形成的TiAlN膜（1）抛光直到其中心线平均粗糙度变为约1nm。因此，防止模制表面（31a，32a）由于热而变色或变得粗糙，从而可以在耐久性，耐热性等方面改善模具。

10. 发明授权

US4956208A Manufacture of a quartz glass vessel for the growth of single crystal semiconductor 失效
标题翻译：制造用于生长单晶半导体的石英玻璃容器
公开(公告)号：US4956208A
公开(公告)日：1990-09-11
申请号：US376136
申请日：1989-07-06
申请人： Akira Uchikawa , Atsushi Iwasaki , Toshio Fukuoka , Mitsuo Matsumura , Hiroshi Matsui , Yasuhiko Sato , Masaaki Aoyama , Eiichi Shinomiya , Akira Fujinoki , Nobuyoshi Ogino
发明人： Akira Uchikawa , Atsushi Iwasaki , Toshio Fukuoka , Mitsuo Matsumura , Hiroshi Matsui , Yasuhiko Sato , Masaaki Aoyama , Eiichi Shinomiya , Akira Fujinoki , Nobuyoshi Ogino
IPC分类号： C03B19/09 , C30B15/10 , C30B35/00
CPC分类号： C30B35/00 , C03B19/095 , C30B15/10 , Y02P40/57 , Y10S117/90 , Y10T117/1032 , Y10T428/131 , Y10T428/1317 , Y10T428/24942 , Y10T428/249953 , Y10T428/249967 , Y10T428/249969 , Y10T428/249978 , Y10T428/24998 , Y10T428/249987 , Y10T428/249988 , Y10T428/24999 , Y10T428/263 , Y10T428/315
摘要： A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.

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