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1. 发明申请

US20050215005A1 Capacitor with stoichiometrically adjusted dielectric and method of fabricating same 审中-公开
标题翻译：具有化学计量调节电介质的电容器及其制造方法
公开(公告)号：US20050215005A1
公开(公告)日：2005-09-29
申请号：US11122375
申请日：2005-05-05
申请人： Derryl Allman , Nabil Mansour , Ponce Saopraseuth
发明人： Derryl Allman , Nabil Mansour , Ponce Saopraseuth
IPC分类号： H01L21/00 , H01L21/20 , H01L21/314 , H01L21/318 , H01L21/8242
CPC分类号： H01L28/40 , H01L21/3145 , H01L21/3185
摘要： A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of silicon to nitrogen to limit the amount of hydrogen. Forming the capacitor by dielectric material plasma enhanced chemical vapor deposition (PECVD) allows hydrogen bonds to be broken by ionic bombardment, so that stoichiometric control is achieved by controlling the power of the PECVD. Applying a predetermined number of thermal cycles of temperature elevation and temperature reduction also breaks the hydrogen bonds to control the amount of the hydrogen in the formed capacitor dielectric material.
摘要翻译：通过调节包含在电容器电介质材料中的离子导电物质（例如氢）的量来制造电容器和电容器电介质材料，以获得预定的电气或功能特性。从硅，氮和氢形成电容器电介质材料允许硅与氮的化学计量比控制以限制氢的量。通过介电材料形成电容器等离子体增强化学气相沉积（PECVD）允许通过离子轰击破坏氢键，从而通过控制PECVD的功率实现化学计量控制。施加预定数量的温度升高和温度降低的热循环也会破坏氢键以控制形成的电容器介电材料中的氢的量。

2. 发明授权

US08629488B2 Method for manufacturing an energy storage device and structure therefor 有权
标题翻译：储能装置的制造方法及其结构
公开(公告)号：US08629488B2
公开(公告)日：2014-01-14
申请号：US12108361
申请日：2008-04-23
申请人： Sallie Hose , Derryl Allman , Peter A. Burke , Ponce Saopraseuth
发明人： Sallie Hose , Derryl Allman , Peter A. Burke , Ponce Saopraseuth
IPC分类号： G11C11/00
CPC分类号： H01L28/75
摘要： An energy storage device such as a metal-insulator-metal capacitor and a method for manufacturing the energy storage device. The metal-insulator-metal capacitor includes an insulating material positioned between a bottom electrode or bottom plate and a top electrode or top plate. The surface area of the bottom electrode is greater than the surface area of the insulating material and the surface area of the insulating material is greater than the surface area of the top electrode. The top electrode and the insulating layer have edges that are laterally within and spaced apart from edges of the bottom electrode. A protective layer covers the top electrode, the edges of the top electrode, and the portions of the insulating layer that are uncovered by the top electrode. The protective layer serves as an etch mask during the formation of the bottom electrode.
摘要翻译：诸如金属 - 绝缘体 - 金属电容器的能量存储装置和用于制造储能装置的方法。金属 - 绝缘体 - 金属电容器包括位于底部电极或底板与顶部电极或顶板之间的绝缘材料。底部电极的表面积大于绝缘材料的表面积，并且绝缘材料的表面积大于顶部电极的表面积。顶部电极和绝缘层具有横向在底部电极的边缘内并与其间隔开的边缘。保护层覆盖顶部电极，顶部电极的边缘和绝缘层的未被顶部电极覆盖的部分。在形成底部电极期间，保护层用作蚀刻掩模。

3. 发明授权

US06562735B1 Control of reaction rate in formation of low k carbon-containing silicon oxide dielectric material using organosilane, unsubstituted silane, and hydrogen peroxide reactants 有权
标题翻译：使用有机硅烷，未取代的硅烷和过氧化氢反应物控制形成低k含碳氧化硅电介质材料的反应速率
公开(公告)号：US06562735B1
公开(公告)日：2003-05-13
申请号：US10015255
申请日：2001-12-11
申请人： Derryl D. J. Allman , Ponce Saopraseuth
发明人： Derryl D. J. Allman , Ponce Saopraseuth
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02211 , H01L21/02271 , H01L21/31633
摘要： Control of a reaction between a peroxide oxidizing agent and a carbon-substituted silane to form a low k carbon-containing silicon oxide dielectric material is achieved, in a first embodiment, by adding, to the carbon-substituted silane reactant, silane (SiH4), to accelerate the process for forming a low k carbon-containing silicon oxide dielectric material by reaction of the carbon-substituted silane/silane mixture with hydrogen peroxide. Also, control of a reaction between a peroxide oxidizing agent and a carbon-substituted silane to form a low k carbon-containing silicon oxide dielectric material is achieved by controlling the ratio of the flow of the hydrogen peroxide reactant and the flow of the reactant mixture of carbon-substituted silane and unsubstituted silane into the reaction chamber though structural modification of the faceplate (showerhead) through which the reactants flow into the chamber.
摘要翻译：在第一实施方案中，通过向碳取代的硅烷反应物中加入硅烷（SiH 4），可以控制过氧化物氧化剂和碳取代的硅烷反应形成低k碳氧化硅介电材料，，通过碳取代的硅烷/硅烷混合物与过氧化氢的反应来加速形成低k碳氧化硅电介质材料的工艺。另外，通过控制过氧化氢反应物的流量和反应物混合物的流量来控制过氧化物氧化剂和碳取代的硅烷之间的反应以形成低k碳氧化硅电介质材料的碳取代的硅烷和未取代的硅烷通过面板（喷头）的结构改性而进入反应室，反应物通过这些结构改变流入室中。

4. 发明授权

US06562700B1 Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal 有权
标题翻译：用于在集成电路结构的低k碳掺杂氧化硅介电材料上去除抗蚀剂掩模的工艺，以及从通孔蚀刻和抗蚀剂掩模去除中除去残余物
公开(公告)号：US06562700B1
公开(公告)日：2003-05-13
申请号：US09873043
申请日：2001-05-31
申请人： Sam Gu , David Pritchard , Derryl D. J. Allman , Ponce Saopraseuth , Steve Reder
发明人： Sam Gu , David Pritchard , Derryl D. J. Allman , Ponce Saopraseuth , Steve Reder
IPC分类号： H01L21322
CPC分类号： H01L21/31138 , H01L21/02052 , H01L21/31633
摘要： A process is disclosed for removing a photoresist mask used to form openings in an underlying layer of low k carbon-doped silicon oxide dielectric material of an integrated circuit structure formed on a semiconductor substrate, which comprises exposing the photoresist mask in a plasma reactor to a plasma formed using a reducing gas until the photoresist mask is removed. In a preferred embodiment the reducing gas is selected from the group consisting of NH3, H2, forming gas, and a mixture of NH3 and H2. The process further provides for the removal of etch residues by first contacting the low k carbon-doped silicon oxide dielectric material with a solvent capable of dissolving and/or removing etch residues left from forming the openings in the low k dielectric material, and from removing the photoresist mask used to form the openings in the low k carbon-doped silicon oxide dielectric material; and then annealing the substrate in an annealing chamber at a temperature sufficient to remove liquid and gaseous byproducts from the low k carbon-doped silicon oxide dielectric material.
摘要翻译：公开了一种用于去除在半导体衬底上形成的集成电路结构的低k碳掺杂氧化硅介电材料的下层中形成开口的光刻胶掩模的方法，其包括将等离子体反应器中的光刻胶掩模曝光于使用还原气体形成的等离子体直到除去光致抗蚀剂掩模。在优选的实施方案中，还原气体选自NH 3，H 2，形成气体和NH 3和H 2的混合物。该方法还通过首先使低k碳掺杂的氧化硅介电材料与能够溶解和/或去除在低k电介质材料中形成开口所留下的蚀刻残留物的溶剂和除去用于在低k碳掺杂氧化硅电介质材料中形成开口的光致抗蚀剂掩模; 然后在退火室中以足以从低k碳掺杂的氧化硅介电材料除去液体和气体副产物的温度退火衬底。

5. 发明申请

US20090267187A1 METHOD FOR MANUFACTURING AN ENERGY STORAGE DEVICE AND STRUCTURE THEREFOR 有权
标题翻译：制造能源储存装置及其结构的方法
公开(公告)号：US20090267187A1
公开(公告)日：2009-10-29
申请号：US12108361
申请日：2008-04-23
申请人： Sallie Hose , Derryl Allman , Peter A. Burke , Ponce Saopraseuth
发明人： Sallie Hose , Derryl Allman , Peter A. Burke , Ponce Saopraseuth
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/75
摘要： An energy storage device such as a metal-insulator-metal capacitor and a method for manufacturing the energy storage device. The metal-insulator-metal capacitor includes an insulating material positioned between a bottom electrode or bottom plate and a top electrode or top plate. The surface area of the bottom electrode is greater than the surface area of the insulating material and the surface area of the insulating material is greater than the surface area of the top electrode. The top electrode and the insulating layer have edges that are laterally within and spaced apart from edges of the bottom electrode. A protective layer covers the top electrode, the edges of the top electrode, and the portions of the insulating layer that are uncovered by the top electrode. The protective layer serves as an etch mask during the formation of the bottom electrode.
摘要翻译：诸如金属 - 绝缘体 - 金属电容器的能量存储装置和用于制造储能装置的方法。金属 - 绝缘体 - 金属电容器包括位于底部电极或底板与顶部电极或顶板之间的绝缘材料。底部电极的表面积大于绝缘材料的表面积，并且绝缘材料的表面积大于顶部电极的表面积。顶部电极和绝缘层具有横向在底部电极的边缘内并与其间隔开的边缘。保护层覆盖顶部电极，顶部电极的边缘和绝缘层的未被顶部电极覆盖的部分。在形成底部电极期间，保护层用作蚀刻掩模。

6. 发明授权

US06583026B1 Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structure 有权
标题翻译：在集成电路结构上形成低k碳掺杂氧化硅介电材料的工艺
公开(公告)号：US06583026B1
公开(公告)日：2003-06-24
申请号：US09872058
申请日：2001-05-31
申请人： Derryl D. J. Allman , Ponce Saopraseuth , Hemanshu D. Bhatt
发明人： Derryl D. J. Allman , Ponce Saopraseuth , Hemanshu D. Bhatt
IPC分类号： H01L2176
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02211 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/31633
摘要： A process for forming a low k carbon-doped silicon oxide dielectric material (lkc-dsodm) on an integrated circuit structure is characterized by improved planarity and good gap fill in high aspect ratio regions of the integrated circuit structure, as well as improved film strength and adherence, and less byproducts trapped in the film. The process comprises: depositing a plurality of layers of lkc-dsodm on an integrated circuit structure in a reactor; and pausing after depositing each layer of lkc-dsodm and before depositing a further layer of lkc-dsodm. The process can further include first forming a base or barrier layer of a silicon-rich and nitrogen-rich dielectric material over the integrated circuit structure, plasma etching the upper surface of the barrier layer to facilitate adhesion of the subsequently deposited lkc-dsodm to the barrier layer, and then, before depositing the first layer of lkc-dsodm, cooling the etched barrier layer down to within 10° C. or less of the subsequent deposition temperature used for formation of the film of lkc-dsodm. In another aspect of the invention the pausing step further includes, before deposition of the next layer of lkc-dsodm, flowing a source of non-reactive gas over the surface of the newly deposited layer of lkc-dsodm to facilitate outgassing and removal of byproducts resulting from the preceding formation and deposition of lkc-dsodm.
摘要翻译：在集成电路结构上形成低k碳掺杂氧化硅电介质材料（lkc-dsodm）的方法的特征在于集成电路结构的高纵横比区域中的平坦度和良好的间隙填充，以及改进的膜强度和坚持，更少的副产品被困在电影中。该方法包括：在反应器中的集成电路结构上沉积多层lkc-dsodm; 并且在沉积每层lkc-dsodm之后并在沉积另外一层lkc-dsodm之前暂停。该方法还可以包括首先在集成电路结构上形成富硅和富氮介电材料的基底或阻挡层，等离子体蚀刻阻挡层的上表面，以便于随后沉积的lkc-dsodm粘附到然后在沉积第一层lkc-dsodm之前，将蚀刻的阻挡层冷却到用于形成lkc-dsodm膜的后续沉积温度的10℃以内。在本发明的另一方面，暂停步骤还包括在沉积下一层lkc-dsodm之前，将非反应性气体源流过新沉积的lkc-dsodm层的表面以便于除气和除去副产物由于以前的lkc-dsodm的形成和沉积而产生。

7. 发明授权

US06951787B2 Capacitor with stoichiometrically adjusted dielectric and method of fabricating same 失效
公开(公告)号：US06951787B2
公开(公告)日：2005-10-04
申请号：US10382709
申请日：2003-03-06
申请人： Derryl D. J. Allman , Nabil Mansour , Ponce Saopraseuth
发明人： Derryl D. J. Allman , Nabil Mansour , Ponce Saopraseuth
IPC分类号： C23C16/34 , C23C16/52 , H01L21/02 , H01L21/318 , H01L21/8242 , H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/52 , H01L28/40
摘要： A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of silicon to nitrogen to limit the amount of hydrogen. Forming the capacitor by dielectric material plasma enhanced chemical vapor deposition (PECVD) allows hydrogen bonds to be broken by ionic bombardment, so that stoichiometric control is achieved by controlling the power of the PECVD. Applying a predetermined number of thermal cycles of temperature elevation and temperature reduction also breaks the hydrogen bonds to control the amount of the hydrogen in the formed capacitor dielectric material.

8. 发明授权

US06566186B1 Capacitor with stoichiometrically adjusted dielectric and method of fabricating same 有权
公开(公告)号：US06566186B1
公开(公告)日：2003-05-20
申请号：US09573137
申请日：2000-05-17
申请人： Derryl D. J. Allman , Nabil Mansour , Ponce Saopraseuth
发明人： Derryl D. J. Allman , Nabil Mansour , Ponce Saopraseuth
IPC分类号： H01L2131
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/52 , H01L28/40
摘要： A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of silicon to nitrogen to limit the amount of hydrogen. Forming the capacitor by dielectric material plasma enhanced chemical vapor deposition (PECVD) allows hydrogen bonds to be broken by ionic bombardment, so that stoichiometric control is achieved by controlling the power of the PECVD. Applying a predetermined number of thermal cycles of temperature elevation and temperature reduction also breaks the hydrogen bonds to control the amount of the hydrogen in the formed capacitor dielectric material.

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