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    • 3. 发明申请
    • Silicon-containing layer deposition with silicon compounds
    • 含硅层沉积与硅化合物
    • US20070240632A1
    • 2007-10-18
    • US11549033
    • 2006-10-12
    • Kaushal SinghPaul ComitaLance ScudderDavid Carlson
    • Kaushal SinghPaul ComitaLance ScudderDavid Carlson
    • C30B23/00
    • C07F7/0896C01B33/04C01B33/107C07F7/12C23C16/24C23C16/30
    • Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.
    • 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中,提供了一种用于选择性和外延沉积含硅材料的方法,其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底,将基底暴露于含有新戊硅烷的工艺气体中, 以及在所述晶体表面上沉积外延层。 在另一个实例中,提供了一种用于覆盖沉积含硅材料的方法,其包括定位和加热含有结晶表面的基底和处理室内的特征表面,并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常,碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。