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1. 发明授权

US07885312B2 Surface emitting semiconductor laser element 失效
标题翻译：表面发射半导体激光元件
公开(公告)号：US07885312B2
公开(公告)日：2011-02-08
申请号：US12219997
申请日：2008-07-31
申请人： Tomofumi Kise , Noriyuki Yokouchi
发明人： Tomofumi Kise , Noriyuki Yokouchi
IPC分类号： H01S3/08
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/0425 , H01S5/105 , H01S5/18319 , H01S5/18377 , H01S5/34306 , H01S2301/166 , H01S2302/00
摘要： A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
摘要翻译：表面发射激光器设置有具有在中心具有点缺陷的光子晶体结构的上反射镜，并且从下反射镜侧发射激光束。在中心的点缺陷处形成上电极，并且元件电阻降低。将对激光束的波长透明的材料用于基板。通过降低光子晶体表面发射激光器的元件电阻来提高发射效率。

2. 发明申请

US20100111468A1 OPTICAL INTEGRATED CIRCUIT AND OPTICAL INTEGRATED CIRCUIT MODULE 审中-公开
标题翻译：光集成电路和光集成电路模块
公开(公告)号：US20100111468A1
公开(公告)日：2010-05-06
申请号：US12482233
申请日：2009-06-10
申请人： Masaki FUNABASHI , Junichi Hasegawa , Takeshi Akutsu , Kazutaka Nara , Noriyuki Yokouchi
发明人： Masaki FUNABASHI , Junichi Hasegawa , Takeshi Akutsu , Kazutaka Nara , Noriyuki Yokouchi
IPC分类号： G02B6/122
CPC分类号： G02B6/12004 , G02B6/12021
摘要： An optical integrated circuit includes a planar lightwave circuit, and a semiconductor element, which are fixed at one contact surface. A semiconductor optical amplifier (SOA) and a turnaround waveguide having a turnaround portion are formed on a semiconductor substrate. The turnaround waveguide is turned around on the second substrate and is connected to an output port of the SOA. An input port and an output port of the turnaround waveguide are optically coupled at the contact surface with an input port and an output port of the optical waveguides respectively.
摘要翻译：光学集成电路包括固定在一个接触表面的平面光波电路和半导体元件。在半导体衬底上形成半导体光放大器（SOA）和具有折回部分的周转波导。转向波导在第二基板上转动并连接到SOA的输出端口。转向波导的输入端口和输出端口在接触表面处分别与光波导的输入端口和输出端口耦合。

3. 发明授权

US07564563B2 Laser gyro and electronic device using the same 有权
标题翻译：激光陀螺仪和电子设备使用相同
公开(公告)号：US07564563B2
公开(公告)日：2009-07-21
申请号：US11806486
申请日：2007-05-31
申请人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
发明人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
IPC分类号： G01C19/72
CPC分类号： G01C19/66
摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.
摘要翻译：本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置（光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。

4. 发明授权

US5666375A Semiconductor quantum well laser having a low threshold current density 失效
标题翻译：具有低阈值电流密度的半导体量子阱激光器
公开(公告)号：US5666375A
公开(公告)日：1997-09-09
申请号：US555472
申请日：1995-11-08
申请人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
发明人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
IPC分类号： H01C3/18 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3434 , H01S5/3409 , H01S5/34306
摘要： The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.
摘要翻译：本发明产生了具有量子阱活性层的1.3μm拉伸应变量子阱激光器，该量子阱活性层可以在结构上被定义为In1-xGaxAsyP1-y，X在0.42和0.55之间，Y在0.8和0.75之间。 InGaAsP有源层需要具有1.0至1.5％的拉伸应力，并且可以在InP和GaAs之间没有任何实质相分离的情况下制造。 1.3μm拉伸应变量子阱激光器的阈值电流密度极小，小于0.2kA / cm2。优选的拉伸应变范围在1.2至1.4％之间或其附近。

5. 发明申请

US20080166098A1 Optical Module 有权
标题翻译：光模块
公开(公告)号：US20080166098A1
公开(公告)日：2008-07-10
申请号：US11910978
申请日：2007-03-22
申请人： Sayoko Ibe , Noriyuki Yokouchi , Kengo Muranushi , Tatsuya Kimoto , Tatsuro Kurobe
发明人： Sayoko Ibe , Noriyuki Yokouchi , Kengo Muranushi , Tatsuya Kimoto , Tatsuro Kurobe
IPC分类号： G02B6/00 , C03B23/20
CPC分类号： G02B6/4204 , G02B6/4237 , G02B6/4292
摘要： An optical-waveguide device mounted on a fixing member having a pair of opposing upright walls and a sub-mount unit including a metallic sub-mount of a rectangular solid shape inserted between the opposing upright walls and a nonmetallic sub-mount of a rectangular solid shape mounted on the metallic sub-mount, and fixed onto a base table. The fixing member and the sub-mount unit as well as the fixing member and the base table are spot-welded together using YAG welding.
摘要翻译：一种光波导装置，其安装在具有一对相对的直立壁的固定构件上，以及副安装单元，其包括插入在相对的直立壁之间的矩形实心形状的金属副底座和矩形固体的非金属底座形状安装在金属底座上，并固定在基座上。使用YAG焊接将固定构件和副安装单元以及固定构件和基座点焊接在一起。

6. 发明授权

US07368316B2 Surface-emission semiconductor laser device 失效
标题翻译：表面发射半导体激光器件
公开(公告)号：US07368316B2
公开(公告)日：2008-05-06
申请号：US11392493
申请日：2006-03-30
申请人： Noriyuki Yokouchi , Norihiro Iwai
发明人： Noriyuki Yokouchi , Norihiro Iwai
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , H01S5/18313 , H01S5/18325 , H01S5/18369
摘要： A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.
摘要翻译：在p型衬底上制造表面发射半导体激光器的方法包括以下步骤：将Au膜置于n型电极的AuGeNi膜或AuGe膜与n型DBR的化合物半导体层之间，随后通过退火在n侧电极中形成Au合金。 Au合金膜的存在改善了n侧电极和化合物半导体层之间的粘附性，以改善注入电流与施加的电压特性。

7. 发明申请

US20070013991A1 Photonic crystal semiconductor device and production method thereof 失效
标题翻译：光子晶体半导体器件及其制造方法
公开(公告)号：US20070013991A1
公开(公告)日：2007-01-18
申请号：US11505428
申请日：2006-08-17
申请人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
发明人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
IPC分类号： G02B26/00 , G02F1/03 , G02F1/00 , G02F1/07
CPC分类号： B82Y20/00 , G02B6/1225 , G02F1/01708 , G02F1/025 , G02F2201/346 , G02F2202/32 , G02F2203/055 , H01S5/0265 , H01S5/105 , H01S5/12 , H01S5/18311 , H01S5/18319 , H01S5/18369 , H01S5/2027
摘要： To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.
摘要翻译：本发明提供一种光子晶体半导体器件及其制造方法，该光子晶体半导体器件能够实现使用半导体和半导体制造工艺容易地形成的具有光子晶体结构的各种光学器件。该目的可以通过光子晶体结构实现，其包括从n-InP衬底11侧依次层叠的下DBR层1，芯层2，上DBR层3和电介质多层膜6，多个形成在芯层2和上DBR层3中的膜厚度方向上的孔9以及在其中形成有多个孔并且设置在多个孔9之间的线缺陷部10，其中线缺陷部分10用作光波导。

8. 发明授权

US07085301B2 Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser 失效
标题翻译：用于垂直腔表面发射激光器的光子晶体单横模缺陷结构
公开(公告)号：US07085301B2
公开(公告)日：2006-08-01
申请号：US10618034
申请日：2003-07-11
申请人： Kent D. Choquette , Noriyuki Yokouchi
发明人： Kent D. Choquette , Noriyuki Yokouchi
IPC分类号： H01S5/00 , H01S3/08 , H01S3/098
CPC分类号： H01S5/18327 , H01S5/105 , H01S5/18311 , H01S5/18319 , H01S2301/166
摘要： The invention is directed to a photonic crystal defect structure for a vertical cavity surface emitting laser (VCSEL). In accordance with the invention, a set of holes is formed in a pattern with one or more missing holes forming a defect in the pattern of the photonic crystal, according to a proscribed depth, hole diameter, and pattern pitch which will insure operation in a single transverse mode.
摘要翻译：本发明涉及用于垂直腔表面发射激光器（VCSEL）的光子晶体缺陷结构。根据本发明，根据禁止的深度，孔直径和图案间距，一组孔形成具有一个或多个缺陷孔，形成光子晶体图案的缺陷的图案，其将确保在单横模式。

9. 发明申请

US20050041713A1 Surface emitting semiconductor laser device 有权
标题翻译：表面发射半导体激光器件
公开(公告)号：US20050041713A1
公开(公告)日：2005-02-24
申请号：US10900935
申请日：2004-07-27
申请人： Norihiro Iwai , Tatsuyuki Shinagawa , Noriyuki Yokouchi
发明人： Norihiro Iwai , Tatsuyuki Shinagawa , Noriyuki Yokouchi
IPC分类号： H01S5/00 , H01S5/183
CPC分类号： H01S5/18313 , H01S5/0021 , H01S5/18311 , H01S5/18344 , H01S5/3201
摘要： A surface emitting semiconductor laser device including a substrate, a bottom DBR, and a mesa post having a layer structure, the layer structure including a top DBR including a plurality of pairs, each of said pairs including an Al-containing high-reflectivity layer and an Al-containing low-reflectivity layer, an active layer structure sandwiched between the DBRs for emitting laser, and a current confinement layer disposed within or in a vicinity of one of the DBRs, the current confinement layer including a central current injection area and an annular current blocking area encircling the central current injection area, the annular current blocking area being formed by selective oxidation of Al in an AlXGa1-XAs layer (0.95≦x
摘要翻译：一种表面发射半导体激光器件，包括具有层结构的衬底，底部DBR和台面柱，所述层结构包括包括多个对的顶部DBR，每个所述对包括含Al的高反射率层和含Al的低反射率层，夹在用于发射激光的DBR之间的有源层结构以及设置在一个DBR内或附近的电流限制层，所述电流限制层包括中心电流注入区域和环形电流阻挡区域，环绕中心电流注入区域，环形电流阻挡区域是通过在厚度低于60nm的Al x Ga 1-x As层（0.95 <= x <1）中选择性氧化Al而形成的，反射层包括原子比不大于0.8且低于0.9的Al。通过将Al含量限制在规定范围内，可以抑制形成电流限制氧化物区域的含Al化合物半导体层中的氧化进程，从而实现寿命更长的表面发射半导体激光器件，或更高的可靠性。

10. 发明授权

US06829274B2 Surface emitting semiconductor laser device 有权
标题翻译：表面发射半导体激光器件
公开(公告)号：US06829274B2
公开(公告)日：2004-12-07
申请号：US10214787
申请日：2002-08-06
申请人： Natsumi Ueda , Noriyuki Yokouchi , Tatsuyuki Shinagawa
发明人： Natsumi Ueda , Noriyuki Yokouchi , Tatsuyuki Shinagawa
IPC分类号： H01S500
CPC分类号： H01S5/18311 , H01S5/0284 , H01S5/1221 , H01S2301/166
摘要： A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.
摘要翻译：氧化Al电流限制结构的表面发射半导体激光器件具有基本横向模式的谐振波长，该谐振波长被设定为小于或等于激光装置在特定温度下的峰值增益波长。表面发射半导体激光器件以单横模式发射。

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