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1. 发明授权

US08202771B2 Manufacturing method of organic semiconductor device 有权
标题翻译：有机半导体器件的制造方法
公开(公告)号：US08202771B2
公开(公告)日：2012-06-19
申请号：US11855271
申请日：2007-09-14
申请人： Mitsutaka Nagae , Hironori Kobayashi , Masanao Matsuoka , Hiroyuki Honda
发明人： Mitsutaka Nagae , Hironori Kobayashi , Masanao Matsuoka , Hiroyuki Honda
IPC分类号： H01L21/00
CPC分类号： H01L51/0018 , H01L51/0003 , H01L51/0541
摘要： A manufacturing method of an organic semiconductor device including an organic semiconductor transistor formation process, wherein the process includes: an organic semiconductor layer formation step of using a substrate to form an organic semiconductor layer made of an organic semiconductor material on the substrate; a passivation layer formation step of forming pattern-wise on the organic semiconductor layer a passivation layer having an ability of shielding vacuum ultraviolet light and an organic semiconductor layer patterning step of irradiating vacuum ultraviolet light to the passivation layer and to the organic semiconductor layer to etch the organic semiconductor layer corresponding to a part where the passivation layer is not formed.
摘要翻译：一种包括有机半导体晶体管形成工艺的有机半导体器件的制造方法，其中所述工艺包括：使用衬底在所述衬底上形成由有机半导体材料制成的有机半导体层的有机半导体层形成步骤; 钝化层形成步骤，在所述有机半导体层上以图形方式形成具有屏蔽真空紫外光的能力的钝化层和向所述钝化层和所述有机半导体层照射真空紫外光的有机半导体层构图步骤，以蚀刻有机半导体层对应于未形成钝化层的部分。

2. 发明申请

US20070128764A1 Organic semiconductor material, organic semiconductor structure and organic semiconductor apparatus 失效
标题翻译：有机半导体材料，有机半导体结构和有机半导体装置
公开(公告)号：US20070128764A1
公开(公告)日：2007-06-07
申请号：US11445940
申请日：2006-06-02
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L29/08 , H01L51/40
CPC分类号： H01L51/0071 , C09K19/3491 , C09K19/3497 , H01L51/0076 , H01L51/0545 , H01L51/0558 , Y02E10/549
摘要： The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material is represented by chemical formula 1 wherein R1 and R2 represent an identical alkyl group having 7 to 20 carbon atoms: There is also provided a liquid crystalline organic semiconductor material characterized by being represented by chemical formula 2 wherein R3 and R4 represent an identical alkyl group having 7 to 20 carbon atoms:
摘要翻译：本发明涉及提供一种在成膜环境下高度稳定的新型液晶有机半导体材料，同时可以容易地通过涂布形成膜。液晶有机半导体材料由化学式1表示，其中R 1和R 2表示相同的具有7至20个碳原子的烷基。还提供了以化学式2表示的液晶有机半导体材料，其中R3和R4 表示具有7至20个碳原子的相同的烷基：

3. 发明申请

US20110053313A1 MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE 失效
标题翻译：有机半导体器件的制造方法
公开(公告)号：US20110053313A1
公开(公告)日：2011-03-03
申请号：US12863538
申请日：2009-01-21
申请人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
发明人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
IPC分类号： H01L51/10
CPC分类号： H01L51/0013 , H01L51/003 , H01L51/0076 , H01L51/0545 , H01L51/0558
摘要： The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.
摘要翻译：本发明提供了一种有机半导体器件的制造方法，其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤，并且该步骤用途：包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底，包括衬底，形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层的栅极绝缘层。

4. 发明授权

US07408188B2 Organic semiconductor material, organic semiconductor structure and organic semiconductor apparatus 失效
标题翻译：有机半导体材料，有机半导体结构和有机半导体装置
公开(公告)号：US07408188B2
公开(公告)日：2008-08-05
申请号：US11449040
申请日：2006-06-07
申请人： Shigeru Sugawara , Hiroki Maeda , Ken Tomino , Masanao Matsuoka
发明人： Shigeru Sugawara , Hiroki Maeda , Ken Tomino , Masanao Matsuoka
IPC分类号： H01L51/30 , C07D333/10
CPC分类号： H01L51/0036 , C08G61/126 , C08G83/005 , H01L51/0545 , Y02E10/549
摘要： An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 π electron rings, M 8 π electron rings, N 10 π electron rings, O 12 π electron rings, P 14 π electron rings, Q 16 π electron rings, R 18 π electron rings, S 20 π electron rings, T 22 π electron rings, U 24 π electron rings, and V 26 π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.
摘要翻译：特征在于具有由化学式1表示的结构的有机半导体材料，通过B1与X之间的空间位阻分解的主链A1-X-A2的平面性和B2与X之间的空间位阻，有机半导体材料具有数平均分子量为约2,000至约200,000：其中A1，A2，B1，B2和X各自具有包括L 6π电子环，M 8π电子环，N 10π电子环，O 12π电子环的骨架结构， P 14π电子环，Q 16π电子环，R 18π电子环，S 20π电子环，T 22π电子环，U 24π电子环和V 26π电子环，其中L，M，N， O，P，Q，R，S，T，U和V各自为0（零）至6的整数，L + M + N + O + P + Q + R + S + T + U + V = 1至6; 而B1和B2具有烷基。

5. 发明申请

US20070045614A1 Organic semiconductor material, organic semiconductor structure and organic semiconductor apparatus 失效
标题翻译：有机半导体材料，有机半导体结构和有机半导体装置
公开(公告)号：US20070045614A1
公开(公告)日：2007-03-01
申请号：US11449040
申请日：2006-06-07
申请人： Shigeru Sugawara , Hiroki Maeda , Ken Tomino , Masanao Matsuoka
发明人： Shigeru Sugawara , Hiroki Maeda , Ken Tomino , Masanao Matsuoka
IPC分类号： C08G75/32 , H01L51/00
CPC分类号： H01L51/0036 , C08G61/126 , C08G83/005 , H01L51/0545 , Y02E10/549
摘要： An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 π electron rings, M 8 π electron rings, N 10 π electron rings, O 12 π electron rings, P 14 π electron rings, Q 16 π electron rings, R 18 π electron rings, S 20 π electron rings, T 22 π electron rings, U 24 π electron rings, and V 26 π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.
摘要翻译：特征在于具有由化学式1表示的结构的有机半导体材料，通过B1与X之间的空间位阻分解的主链A1-X-A2的平面度和B2与X之间的空间位阻，有机半导体材料具有数平均分子量为约2,000至约200,000：其中A1，A2，B1，B2和X各自具有包含L 6π电子环，M 8π电子环，N 10π电子环，O 12π电子环的骨架结构， P 14π电子环，Q 16π电子环，R 18π电子环，S 20π电子环，T 22π电子环，U 24π电子环和V 26π电子环，其中L，M，N， O，P，Q，R，S，T，U和V各自为0（零）至6的整数，L + M + N + O + P + Q + R + S + T + U + V = 1至6; 而B1和B2具有烷基。

6. 发明申请

US20070045613A1 Organic semiconductor material, Organic semiconductor structure and Organic semiconductor apparatus 审中-公开
标题翻译：有机半导体材料，有机半导体结构和有机半导体装置
公开(公告)号：US20070045613A1
公开(公告)日：2007-03-01
申请号：US11445919
申请日：2006-06-02
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0068 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.
摘要翻译：本发明涉及提供一种在成膜环境下高度稳定的液晶有机半导体材料，同时可以容易地通过涂布形成膜。液晶有机半导体材料包括：包含彼此线性连接的3至6个噻吩的噻吩骨架; 和位于噻吩骨架两侧的碳原子数为1〜20的相同的烷基，其中分别引入了噻吩骨架和烷基之间的乙炔骨架，或者将乙炔骨架对称引入到噻吩骨架中。

7. 发明申请

US20120070945A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20120070945A1
公开(公告)日：2012-03-22
申请号：US13227977
申请日：2011-09-08
申请人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
发明人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
IPC分类号： H01L21/336
CPC分类号： H01L51/0541 , H01L27/3244
摘要： This disclosure provides an organic semiconductor device including: a substrate; a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, and the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
摘要翻译：本公开提供一种有机半导体器件，包括：衬底; 源电极和漏电极，形成在基板上; 形成在源电极和漏电极上的绝缘分隔部分，其形成为绝缘分隔部分的开口部分设置在由源电极和漏电极形成的沟道区之上; 有机半导体层，形成在绝缘分隔部分的开口部分中，并且在源电极和漏电极上; 栅极绝缘层，其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极，所述绝缘分隔部的高度为0.1μm〜1.5μm。

8. 发明申请

US20070128763A1 Method for forming an organic semiconductor layer, organic semiconductor structure and organic semiconductor apparatus 审中-公开
标题翻译：形成有机半导体层的方法，有机半导体结构和有机半导体装置
公开(公告)号：US20070128763A1
公开(公告)日：2007-06-07
申请号：US11445939
申请日：2006-06-02
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L51/40
CPC分类号： H01L51/0007 , H01L51/0036 , H01L51/0076 , H01L51/0545 , H01L51/0558 , Y02E10/549
摘要： This invention is directed to the provision of a method for organic semiconductor layer formation that can easily form a uniform thin film, by coating, which has good charge mobility and a high level of alignment. The method for organic semiconductor layer formation is characterized by comprising the steps of: forming a coating film in a mixed liquid crystal state using a mixture, which can exhibit a thermotropic mixed liquid crystal phase, prepared by mixing an organic semiconductor material with a solvent; and either cooling the coating film to a temperature at which the coating film does not exhibit any mixed liquid crystal state, or removing the solvent while cooling the coating film, to form an organic semiconductor layer comprising a smectic liquid crystal phase or a crystal phase of the organic semiconductor material.
摘要翻译：本发明涉及提供一种有机半导体层形成方法，其可以容易地形成具有良好的电荷迁移率和较高取向度的均匀的薄膜。有机半导体层形成方法的特征在于包括以下步骤：使用可以显示通过将有机半导体材料与溶剂混合制备的热致混合液晶相的混合物形成混合液晶状态的涂膜; 并且将涂膜冷却至涂膜不显示任何混合液晶状态的温度，或者在冷却涂膜的同时除去溶剂，形成有机半导体层，该有机半导体层包括层间界面液晶相或晶相有机半导体材料。

9. 发明授权

US08202759B2 Manufacturing method of organic semiconductor device 失效
标题翻译：有机半导体器件的制造方法
公开(公告)号：US08202759B2
公开(公告)日：2012-06-19
申请号：US12863538
申请日：2009-01-21
申请人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
发明人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
IPC分类号： H01L51/40
CPC分类号： H01L51/0013 , H01L51/003 , H01L51/0076 , H01L51/0545 , H01L51/0558
摘要： The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.
摘要翻译：本发明提供了一种有机半导体器件的制造方法，其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤，并且该步骤用途：包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底，包括衬底，形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层的栅极绝缘层。

10. 发明授权

US07935828B2 Organic semiconductor material, organic semiconductor structure and organic semiconductor apparatus 失效
标题翻译：有机半导体材料，有机半导体结构和有机半导体装置
公开(公告)号：US07935828B2
公开(公告)日：2011-05-03
申请号：US11445940
申请日：2006-06-02
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L21/00 , H01L51/30 , C07D513/04
CPC分类号： H01L51/0071 , C09K19/3491 , C09K19/3497 , H01L51/0076 , H01L51/0545 , H01L51/0558 , Y02E10/549
摘要： The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material is represented by chemical formula 1 wherein R1 and R2 represent an identical alkyl group having 7 to 20 carbon atoms: There is also provided a liquid crystalline organic semiconductor material characterized by being represented by chemical formula 2 wherein R3 and R4 represent an identical alkyl group having 7 to 20 carbon atoms:
摘要翻译：本发明涉及提供一种在成膜环境下高度稳定的新型液晶有机半导体材料，同时可以容易地通过涂布形成膜。液晶有机半导体材料由化学式1表示，其中R 1和R 2表示相同的具有7至20个碳原子的烷基。还提供了以化学式2表示的液晶有机半导体材料，其中R3和R4 表示具有7至20个碳原子的相同的烷基：

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