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1. 发明申请

US20110247995A1 DRY ETCHING METHOD AND DRY ETCHING APPARATUS 审中-公开
标题翻译：干蚀刻方法和干蚀刻装置
公开(公告)号：US20110247995A1
公开(公告)日：2011-10-13
申请号：US13084854
申请日：2011-04-12
申请人： Shuji TAKAHASHI , Haruo SHINDO
发明人： Shuji TAKAHASHI , Haruo SHINDO
IPC分类号： C23F1/00 , C23F1/08 , H05H1/24
CPC分类号： H01L21/31122 , H01J37/32082 , H01J37/32532
摘要： A dry etching method includes the steps of: supplying process gas to an interior of a vacuum vessel and supplying high-frequency power for plasma generation to an electrode of a plasma generation unit disposed in the vacuum vessel so as to generate plasma; and applying a high-frequency bias voltage to a substrate which is a member to be etched so as to carry out etching of the substrate, wherein the etching is carried out while applying the high-frequency bias voltage in which a self-bias voltage Vdc of a substrate bias voltage is not less than 0 Volts, by adopting a composition using a high-frequency power source for bias which is transformer-coupled to the substrate and a direct current power source for bias which is connected in series to a secondary side of a transformer so as to apply the substrate bias voltage in which a high-frequency voltage and a direct current voltage are superimposed, to the substrate from these power sources via the transformer.
摘要翻译：干蚀刻方法包括以下步骤：向真空容器的内部供应处理气体，并将等离子体产生的高频电力提供给设置在真空容器中的等离子体发生单元的电极，以产生等离子体; 以及将高频偏置电压施加到要被蚀刻的部件的基板上以进行所述基板的蚀刻，其中，在施加其中自偏压Vdc的高频偏置电压的同时进行蚀刻衬底偏置电压不低于0伏，通过采用使用高频电源的组合物，该组合物用于与衬底变压耦合的偏压，以及用于与二次侧串联连接的用于偏压的直流电源的变压器，以便通过变压器将来自这些电源的叠加有高频电压和直流电压的衬底偏置电压施加到衬底。

2. 发明授权

US08404602B2 Plasma oxidation method and plasma oxidation apparatus 有权
标题翻译：等离子体氧化法和等离子体氧化装置
公开(公告)号：US08404602B2
公开(公告)日：2013-03-26
申请号：US13085215
申请日：2011-04-12
申请人： Shuji Takahashi , Haruo Shindo
发明人： Shuji Takahashi , Haruo Shindo
IPC分类号： H01L21/469
CPC分类号： H01L21/02164 , H01L21/02238
摘要： A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin
摘要翻译：等离子体氧化法包括以下步骤：用含有氧气的工艺气体产生含氧等离子体; 对放置在台架上的基板施加偏置电压; 并且将含氧等离子体中的正离子和负离子放射到衬底上，以便在以如下方式控制衬底的等离子体氧化的同时控制衬底的偏置电位：偏压的最大值Vmax和最小值Vmin 电位和等离子体电位Vp满足以下关系：Vmin

3. 发明授权

US06511575B1 Treatment apparatus and method utilizing negative hydrogen ion 失效
标题翻译：利用负氢离子的处理装置和方法
公开(公告)号：US06511575B1
公开(公告)日：2003-01-28
申请号：US09437336
申请日：1999-11-10
申请人： Haruo Shindo , Hideo Kitagawa , Masakazu Furukawa
发明人： Haruo Shindo , Hideo Kitagawa , Masakazu Furukawa
IPC分类号： H05H100
CPC分类号： H01L21/76843 , B08B7/0035 , C23C16/0227 , H01J37/32357 , H01L21/28518 , H01L21/67069 , H01L21/76814 , H01L21/76838 , H01L21/76862
摘要： In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas is changed to a hydrogen radical, the radical is primarily changed to a negative hydrogen ion, and the ion is introduced onto a wafer arranged in a vacuum container. In this manner, cleaning is done by assisting a negative hydrogen ion having its less generated secondary electrons without imparting plasma damage to an element.
摘要翻译：为了消除半导体衬底的接触孔，在通孔全部内部进行灰化后的聚合物渣滓或阻挡金属表面上的氧化物层，氢气变为氢原子，基团主要变成负的氢离子，将离子引入布置在真空容器中的晶片上。以这种方式，通过辅助具有较少产生的二次电子的负氢离子而不对元件施加等离子体损伤来进行清洁。

4. 发明申请

US20110250763A1 PLASMA OXIDATION METHOD AND PLASMA OXIDATION APPARATUS 有权
标题翻译：等离子体氧化方法和等离子体氧化装置
公开(公告)号：US20110250763A1
公开(公告)日：2011-10-13
申请号：US13085215
申请日：2011-04-12
申请人： Shuji TAKAHASHI , Haruo SHINDO
发明人： Shuji TAKAHASHI , Haruo SHINDO
IPC分类号： H01L21/316 , C23C16/50
CPC分类号： H01L21/02164 , H01L21/02238
摘要： A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin
摘要翻译：等离子体氧化法包括以下步骤：用含有氧气的工艺气体产生含氧等离子体; 对放置在台架上的基板施加偏置电压; 并且将含氧等离子体中的正离子和负离子放射到衬底上，以便在以如下方式控制衬底的等离子体氧化的同时控制衬底的偏置电位：偏压的最大值Vmax和最小值Vmin 电位和等离子体电位Vp满足以下关系：Vmin

5. 发明授权

US06873164B2 Method of measuring electron energy distribution in plasma region and apparatus for measuring the same 失效
标题翻译：测量等离子体区域电子能量分布的方法及其测量装置
公开(公告)号：US06873164B2
公开(公告)日：2005-03-29
申请号：US09935585
申请日：2001-08-24
申请人： Haruo Shindo , Takayuki Fukasawa
发明人： Haruo Shindo , Takayuki Fukasawa
IPC分类号： H05H1/00 , G01R29/24 , G01R31/302 , G01N27/62
CPC分类号： G01R29/24
摘要： A method of an electron energy distribution in a plasma region generated by high-frequency power. In the method, a heating probe is inserted into the plasma region and heated by a current flowing into the plasma region. A pulse voltage having a sufficient shorter period than a thermal time constant of the heating probe is applied to the probe, which emits thermions. The number of the thermions emitted sufficiently increases. The plasma vibration frequency of the emitted thermions is sufficiently higher than the frequency of the high-frequency power. The floating potential of the heating probe therefore follows the high frequency potential existing in the plasma. The floating potential difference between a voltage period of the pulse voltage and a no-voltage period is detected, and an the electron energy distribution in the plasma region is thereby determined.
摘要翻译：通过高频功率产生的等离子体区域中的电子能量分布的方法。在该方法中，将加热探针插入到等离子体区域中，并通过流入等离子体区域的电流进行加热。将具有比加热探针的热时间常数足够短的周期的脉冲电压施加到发射热量的探针。发射的热量数量足够增加。发射的热离子的等离子体振动频率足够高于高频功率的频率。因此，加热探头的浮动电位遵循等离子体中存在的高频电位。检测脉冲电压的电压周期和无电压周期之间的浮动电位差，由此确定等离子体区域中的电子能量分布。

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