专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08652864B2 Solid-state image pickup device and method for producing the same 有权
公开(公告)号：US08652864B2
公开(公告)日：2014-02-18
申请号：US12903945
申请日：2010-10-13
申请人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
发明人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L27/14643
摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

2. 发明授权

US08324702B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08324702B2
公开(公告)日：2012-12-04
申请号：US13043090
申请日：2011-03-08
申请人： Masakazu Furukawa , Keiji Mabuchi
发明人： Masakazu Furukawa , Keiji Mabuchi
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/14603 , H01L27/14623 , H01L27/14625 , H01L27/14629 , H01L27/14632 , H01L27/1464
摘要： A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.
摘要翻译：一种固体摄像装置，具备：对每个像素设置的光电转换部，将入射到基板的第一面的光转换成信号电荷;读取由光电转换部累积的信号电荷的电路区域;多层膜包括绝缘膜和布线膜，所述多层膜设置在与所述第一表面相对的所述基板的第二表面上，以及至少设置在所述多层膜中的布线膜和所述基板之间的防透膜。

3. 发明授权

US07965602B2 Information recording apparatus and information recording method 失效
标题翻译：信息记录装置和信息记录方法
公开(公告)号：US07965602B2
公开(公告)日：2011-06-21
申请号：US12100463
申请日：2008-04-10
申请人： Yoshio Sasaki , Masakazu Furukawa , Hisao Tanaka , Hiroyuki Uchino
发明人： Yoshio Sasaki , Masakazu Furukawa , Hisao Tanaka , Hiroyuki Uchino
IPC分类号： G11B7/00
CPC分类号： G11B7/0062 , G11B7/00456
摘要： In the information recording apparatus, by driving the light source by the pulse signal corresponding to the recording signal, the laser pulse corresponding to the recording signal is irradiated onto the recording medium. The recording signal has the mark period to form the recording mark, and the space period in which the recording mark is not formed. In the mark period, the output level of the laser pulse changes between the normal level and the writing level, thereby, the recording mark is formed on the recording medium. On the one hand, over a predetermined period in the space period, the output level of the laser pulse is changed to the low level lower than the normal level. Thereby, the heat accumulation onto the recording medium, due to the transient response of the laser pulse in the mark period, is reduced, and in the mark period after that, the correct recording mark can be formed.
摘要翻译：在信息记录装置中，通过与对应于记录信号的脉冲信号驱动光源，将与记录信号对应的激光脉冲照射到记录介质上。记录信号具有用于形成记录标记的标记周期和不形成记录标记的空间周期。在标记期间，激光脉冲的输出电平在正常电平和写入电平之间变化，由此在记录介质上形成记录标记。一方面，在空间周期的预定时间段内，激光脉冲的输出电平变为低于正常电平的低电平。因此，由于激光脉冲在标记周期中的瞬态响应而在记录介质上的积聚减少，并且在标记周期之后，可以形成正确的记录标记。

4. 发明授权

US07420234B2 Solid-state imaging device and method for fabricating same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07420234B2
公开(公告)日：2008-09-02
申请号：US11318176
申请日：2005-12-23
申请人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
发明人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
IPC分类号： H01L31/062 , H01L31/113 , H01L31/0232
CPC分类号： H01L27/14601 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.
摘要翻译：固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

5. 发明授权

US07217961B2 Solid-state image pickup device and method for producing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07217961B2
公开(公告)日：2007-05-15
申请号：US11340180
申请日：2006-01-26
申请人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
发明人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
IPC分类号： H01L31/0328
CPC分类号： H01L27/1463 , H01L27/14643
摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.
摘要翻译：固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

6. 发明申请

US20070069238A1 Solid-state image pickup device and method for producing the same 有权
公开(公告)号：US20070069238A1
公开(公告)日：2007-03-29
申请号：US11604490
申请日：2006-11-27
申请人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
发明人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
IPC分类号： H01L31/00
CPC分类号： H01L27/1463 , H01L27/14643
摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

7. 发明申请

US20050031323A1 Hot plate unit 审中-公开
公开(公告)号：US20050031323A1
公开(公告)日：2005-02-10
申请号：US10931903
申请日：2004-09-01
申请人： Jo Saito , Masakazu Furukawa , Yasutaka Ito
发明人： Jo Saito , Masakazu Furukawa , Yasutaka Ito
IPC分类号： B60N2/30 , B60N2/36 , H01L21/00 , F24C1/00
CPC分类号： H01L21/67103 , B60N2/3011 , B60N2/366
摘要： A hot plate unit for heating semiconductor wafers. The hot plate unit includes a case, a hot plate, a seal element, and a holding ring. The seal element is made of a heat insulative material and is arranged between the case and the hot plate. The hot plate is clamped between the holding ring and the seal element. Screws for fastening the holding ring do not contact the hot plate.

8. 发明授权

US08384176B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08384176B2
公开(公告)日：2013-02-26
申请号：US11253823
申请日：2005-10-19
申请人： Masakazu Furukawa , Keiji Mabuchi
发明人： Masakazu Furukawa , Keiji Mabuchi
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/14603 , H01L27/14623 , H01L27/14625 , H01L27/14629 , H01L27/14632 , H01L27/1464
摘要： A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.
摘要翻译：一种固体摄像装置，具备：对每个像素设置的光电转换部，将入射到基板的第一面的光转换为信号电荷;读取由光电转换部累积的信号电荷的电路区域;多层膜包括绝缘膜和布线膜，所述多层膜设置在与所述第一表面相对的所述基板的第二表面上，以及至少设置在所述多层膜中的布线膜和所述基板之间的防透膜。

9. 发明申请

US20100075454A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：US20100075454A1
公开(公告)日：2010-03-25
申请号：US12629755
申请日：2009-12-02
申请人： Keiji TATANI , Hideshi ABE , Masanori OHASHI , Atsushi MASAGAKI , Atsuhiko YAMAMOTO , Masakazu FURUKAWA
发明人： Keiji TATANI , Hideshi ABE , Masanori OHASHI , Atsushi MASAGAKI , Atsuhiko YAMAMOTO , Masakazu FURUKAWA
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L27/14643
摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.
摘要翻译：固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

10. 发明授权

US07351598B2 Solid-stage image pickup device and method for producing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07351598B2
公开(公告)日：2008-04-01
申请号：US11604490
申请日：2006-11-27
申请人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
发明人： Keiji Tatani , Hideshi Abe , Masanori Ohashi , Atsushi Masagaki , Atsuhiko Yamamoto , Masakazu Furukawa
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L27/14643
摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.
摘要翻译：固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式