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1. 发明授权

US06643155B2 Power semiconductor device, power arm and inverter circuit 失效
标题翻译：功率半导体器件，电源臂及逆变电路
公开(公告)号：US06643155B2
公开(公告)日：2003-11-04
申请号：US09880919
申请日：2001-06-15
申请人： Gourab Majumdar , Shinji Hatae
发明人： Gourab Majumdar , Shinji Hatae
IPC分类号： H02M75387
CPC分类号： H02M7/003
摘要： It is an object of the present invention to provide an inverter circuit including a power arm ensuring a high breakdown voltage and having low probability of malfunction. In a power arm element consisting of a switching element and a diode connected in inverse-parallel connection thereto, n free wheeling diodes (n≧2) connected in series are connected in inverse-parallel connection to a switching element (1b). A breakdown voltage between an anode and a cathode of each free wheeling diode is defined to be 1/n of a breakdown voltage of the switching element (1b). That is, the breakdown voltage of each free wheeling diode is reduced to 1/n to reduce a thickness of a n− drift region. A transient voltage characteristic during flow of a free wheeling current can be thereby kept low. The drop in the breakdown voltage is compensated with the n free wheeling diodes connected in series, to thereby ensure breakdown voltage of a degree approximately the same as that of the switching element.
摘要翻译：本发明的目的是提供一种包括确保高击穿电压并且故障概率低的电源臂的逆变器电路。在由开关元件和与其并联连接的二极管组成的功率臂元件中，串联连接的n个续流二极管（n> = 2）与开关元件（1b）反并联连接。每个续流二极管的阳极和阴极之间的击穿电压被定义为开关元件（1b）的击穿电压的1 / n。也就是说，每个续流二极管的击穿电压降低到1 / n，以减小n漂移区域的厚度。因此，可以保持在续流电流的流动期间的瞬时电压特性。通过串联连接的n个续流二极管来补偿击穿电压的下降，从而确保与开关元件大致相同程度的击穿电压。

2. 外观设计

USD421969S Semiconductor device 失效
公开(公告)号：USD421969S
公开(公告)日：2000-03-28
申请号：US100732
申请日：1999-02-17
申请人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara
设计人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara

3. 发明授权

US5703399A Semiconductor power module 失效
标题翻译：半导体电源模块
公开(公告)号：US5703399A
公开(公告)日：1997-12-30
申请号：US648432
申请日：1996-05-15
申请人： Gourab Majumdar , Tooru Iwagami , Sukehisa Noda
发明人： Gourab Majumdar , Tooru Iwagami , Sukehisa Noda
IPC分类号： H01L23/12 , H01L21/56 , H01L23/36 , H01L23/433 , H01L23/495 , H01L23/50 , H01L23/52 , H01L25/04 , H01L25/07 , H01L25/18 , H01L23/34
CPC分类号： H01L25/072 , H01L21/565 , H01L23/4334 , H01L23/49575 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2924/01079 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/3025
摘要： A blanked lead frame serves both as an interconnection pattern for a control circuit and a power circuit and as external terminals. Highly heat conducting resin having an electric insulating property is put between the lead frame and the heat sink arranged to face each other to maintain good thermal conductivity therebetween. The heat sink and the lead frame are coupled easily and fixedly by performing a simple process of sealing with the highly heat conducting resin. Accordingly, no expensive circuit boards are required, which have been necessary in conventional devices, nor a process of patterning the interconnection pattern and a process of connecting the external terminals to the interconnection pattern when manufacturing the device required. That is to say, the manufacturing cost is reduced without deteriorating the heat radiating characteristic.
摘要翻译：消隐引线框架既用作控制电路，电源电路和外部端子的互连图案。具有电绝缘性的高导热性树脂被放置在彼此面对的引线框架和散热器之间以保持良好的导热性。通过对高导热性树脂进行简单的密封处理，散热器和引线框架容易固定地连接。因此，在制造所需要的装置时，在常规装置中不需要昂贵的电路板，也不需要对互连图案进行图案化处理和将外部端子连接到互连图案的处理。也就是说，制造成本降低而不会降低散热特性。

4. 发明授权

US5389801A Semiconductor device having increased current capacity 失效
标题翻译：具有增加的电流容量的半导体器件
公开(公告)号：US5389801A
公开(公告)日：1995-02-14
申请号：US972290
申请日：1992-11-05
申请人： Tomohide Terashima , Gourab Majumdar
发明人： Tomohide Terashima , Gourab Majumdar
IPC分类号： H01L29/78 , H01L21/332 , H01L21/336 , H01L29/06 , H01L29/74 , H01L29/749 , H01L23/58 , H01L27/01 , H01L31/111
CPC分类号： H01L29/66378 , H01L29/0649 , H01L29/7455 , H01L29/749
摘要： A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n.sup.- layer 2 formed on a p.sup.+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n.sup.+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3b and 3c, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al-Si electrode 7 is in contact with the p diffusion region 3a and the n.sup.+ diffusion region 4a while a metal electrode 8 is in contact with the p.sup.+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n.sup.+ diffusion region 4a, p diffusion region 3a, n.sup.- layer 2 and p.sup.+ substrate 1 is prevented from being actuated.
摘要翻译：本发明的一般目的是使最大可控电流大，而不会对其它特性产生不利影响。在p +衬底1上形成的n层2的表面中，由n +扩散区域4a，4b和氧化膜9隔开形成p扩散区域3a，3b和3c。在p扩散区域3b和3c上方，电极5a和5b通过氧化膜6与周围形成绝缘.Al-Si电极7与p扩散区域3a和n +扩散区域4a接触，而金属电极8与p +衬底1接触通过插入氧化膜9，防止由n +扩散区域4a，p扩散区域3a，n-层2和p +衬底1组成的晶闸管被致动。

5. 发明授权

US4903106A Semiconductor power device integrated with temperature protection means 失效
标题翻译：半导体功率器件集成了温度保护装置
公开(公告)号：US4903106A
公开(公告)日：1990-02-20
申请号：US202469
申请日：1988-06-06
申请人： Masanori Fukunaga , Gourab Majumdar
发明人： Masanori Fukunaga , Gourab Majumdar
IPC分类号： H01L27/02 , H01L27/04 , H01L29/08 , H01L29/10 , H01L29/78 , H02H5/04 , H03K17/14
CPC分类号： H01L29/7803 , H01L27/0211 , H01L29/1008 , H01L29/1033 , H01L29/1079 , H02H5/044 , H03K17/145 , H01L29/0878 , H01L29/0886 , H01L29/1095
摘要： The present invention relates to a semiconductor device employed for high power use and a method of manufacturing the same. According to the present invention, a temperature detecting device is formed on the same substrate with a power device. Thus, there is no need to add an external temperature sensor, whereby the device can be reduced in size. Further, an abnormal temperature of the power device is accurately detected by the temperature detecting device, whereby thermal breakdown of the power device is reliably prevented.
摘要翻译：本发明涉及用于大功率使用的半导体器件及其制造方法。根据本发明，在具有动力装置的同一基板上形成温度检测装置。因此，不需要添加外部温度传感器，由此可以减小装置的尺寸。此外，通过温度检测装置精确地检测功率器件的异常温度，从而可靠地防止功率器件的热击穿。

6. 发明授权

US4880995A Electrically isolated MOSFET drive circuit 失效
标题翻译：电隔离MOSFET驱动电路
公开(公告)号：US4880995A
公开(公告)日：1989-11-14
申请号：US233855
申请日：1988-08-18
申请人： Satoshi Mori , Gourab Majumdar
发明人： Satoshi Mori , Gourab Majumdar
IPC分类号： H03K17/0412 , H03K17/567 , H03K17/60
CPC分类号： H03K17/04126 , H03K17/567
摘要： A driver circuit for driving a switching element in response to a driving signal from a driving signal generator includes an electrical isolation circuit for generating an electrically isolated signal from the driving signal in response to the driving signal; a first signal generator which receives the electrically isolated signal, and generates a first signal which level-changes from a second level to a third level in response to the level change of the electrically isolated signal from a first level to the second level; a second signal generator which receives the electrically isolated signal, and generates a second signal synchronous with the electrically isolated signal; a third signal generator which receives the signal from the first signal generator, and generates a third signal synchronous with the first signal; a fourth signal generator which receives the signals from the second and the third signal generators, and generates a fourth signal having a signal level equal to the sum of the second and the third signal levels, the generator including a metal oxide semiconductor field effect transistor.
摘要翻译：用于响应于来自驱动信号发生器的驱动信号驱动开关元件的驱动器电路包括电隔离电路，用于响应驱动信号从驱动信号产生电隔离信号; 第一信号发生器，其接收电隔离信号，并且响应于电隔离信号从第一电平到第二电平的电平变化而产生电平从第二电平变化到第三电平的第一信号; 第二信号发生器，其接收所述电隔离信号，并产生与所述电隔离信号同步的第二信号; 第三信号发生器，其接收来自第一信号发生器的信号，并产生与第一信号同步的第三信号; 第四信号发生器，其接收来自第二和第三信号发生器的信号，并产生具有等于第二和第三信号电平之和的信号电平的第四信号，发生器包括金属氧化物半导体场效应晶体管。

7. 发明授权

US08168985B2 Semiconductor module including a switch and non-central diode 有权
标题翻译：半导体模块包括开关和非中心二极管
公开(公告)号：US08168985B2
公开(公告)日：2012-05-01
申请号：US12543779
申请日：2009-08-19
申请人： Kiyoshi Arai , Gourab Majumdar
发明人： Kiyoshi Arai , Gourab Majumdar
IPC分类号： H01L25/07 , H01L25/18 , H01L29/12
CPC分类号： H01L27/0664 , H01L21/8213 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/071 , H01L25/074 , H01L25/18 , H01L29/6606 , H01L29/861 , H01L29/872 , H01L2224/32145 , H01L2224/371 , H01L2224/37147 , H01L2224/40095 , H01L2224/40225 , H01L2224/40227 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73263 , H01L2224/73265 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/83801
摘要： A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.
摘要翻译：提供了一种具有安装在开关元件上的一个或多个碳化硅二极管元件的半导体模块，其中通过将开关元件中的每个二极管元件适当地布置来降低温度上升，从而为各个二极管元件提供散热路径。各个二极管元件布置在开关元件的非中心部分上，以便于散发由每个二极管元件产生的热量，从而降低半导体模块中的温度升高。

8. 发明授权

US07235857B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US07235857B2
公开(公告)日：2007-06-26
申请号：US10467344
申请日：2001-05-25
申请人： Gourab Majumdar , Shinji Hatae , Akihisa Yamamoto
发明人： Gourab Majumdar , Shinji Hatae , Akihisa Yamamoto
IPC分类号： H01L29/00 , H01L27/01
CPC分类号： H01L29/7802 , H01L21/8213 , H01L21/823487 , H01L27/088 , H01L29/1608
摘要： A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.
摘要翻译：提供一种半导体器件，其中在衬底上形成包括垂直MOSFET的多个MOSFET。该装置包括具有彼此面对的前表面和后表面的碳化硅衬底，形成在衬底中的从衬底的前表面延伸到背表面的隔离区域，以及形成在隔离区域的相对侧上的第一和第二MOSFET ，分别。

9. 发明授权

US06208041B1 Drive control device, module and combined module 有权
标题翻译：驱动控制装置，模块和组合模块
公开(公告)号：US06208041B1
公开(公告)日：2001-03-27
申请号：US09244175
申请日：1999-02-04
申请人： Gourab Majumdar , Khalid Hassan Hussein , Mitsutaka Iwasaki
发明人： Gourab Majumdar , Khalid Hassan Hussein , Mitsutaka Iwasaki
IPC分类号： H03K1708
CPC分类号： H03K17/127 , H03K17/122 , Y10T307/747 , Y10T307/858
摘要： Current sense voltages (VCSl˜VCSn), which are the detected values of n (≧2) IGBTs connected in parallel, are converted into digital form, and thereafter, are subjected to an operation processing. After the current sense voltages (VCSl˜VCSn) are converted into collector currents (Il˜In) by use of constants (Gl˜Gn and VOFFSETl˜VOFFSETn)(step 103), current deviations (&Dgr;Il˜&Dgr;In) respectively defined as differences of the collector currents (Il˜In) from the average (IAVG) thereof are calculated (step 104, 105). Drive control voltages (VDl˜VDn) are renewed by changes (&Dgr;VDl˜&Dgr;VDn) which are respectively obtained by multiplying the current deviations (&Dgr;Il˜&Dgr;In) by factors (Kij)(step 106, 107). The drive control voltage (VDl˜VDn) are converted into analogue form, and thereafter, supplied to n IGBTs as their gate voltages (VGE). The constants (Gl˜Gn, VOFFSETl˜VOFFSETn, and Kij) are prepared individually for respective n switching elements. As a result, current imbalance of plural switching elements connected in parallel is eliminated in high precision.
摘要翻译：作为并联连接的n（> = 2）个IGBT的检测值的电流检测电压（VCS1〜VCSn）被转换为数字形式，然后进行操作处理。在通过使用常数（G1〜Gn和VOFFSET1〜VOFFSETn）将电流检测电压（VCS1〜VCSn）转换为集电极电流（Il〜In）（步骤103））后，将电流偏差（DELTAI1〜DELTAIn）分别定义为计算来自其平均值（IAVG）的集电极电流（I1〜In）（步骤104,105）。驱动控制电压（VD1〜VDn）通过将电流偏差（DELTAI1〜DELTAIn）乘以因子（Kij）而得到的变化（DELTAVD1〜DELTAVDn）更新（步骤106,107）。驱动控制电压（VD1〜VDn）转换为模拟形式，之后提供给n个IGBT作为其栅极电压（VGE）。为各n个开关元件分别准备常数（Gl〜Gn，VOFFSET1〜VOFFSETn，Kij）。结果，高精度地消除并联连接的多个开关元件的电流不平衡。

10. 外观设计

USD428859S Semiconductor device 失效
公开(公告)号：USD428859S
公开(公告)日：2000-08-01
申请号：US106586
申请日：1999-06-15
申请人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara
设计人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara

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