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1. 发明授权

US08786039B2 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy 有权
标题翻译：用于提供具有工程化的垂直磁各向异性的磁结的方法和系统
公开(公告)号：US08786039B2
公开(公告)日：2014-07-22
申请号：US13723172
申请日：2012-12-20
申请人： Dmytro Apalkov , Chang-Man Park , Roman Chepulskyy , Alexey Vasilyevitch Khvalkovskiy , Xueti Tang
发明人： Dmytro Apalkov , Chang-Man Park , Roman Chepulskyy , Alexey Vasilyevitch Khvalkovskiy , Xueti Tang
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has an engineered perpendicular magnetic anisotropy. The engineered PMA includes at least one of an insulating insertion layer induced PMA, a stress induced PMA, PMA due to interface symmetry breaking, and a lattice mismatch induced PMA. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括参考层，非磁性间隔层和自由层。非磁性间隔层位于参考层和自由层之间。自由层具有工程垂直磁各向异性。工程化的PMA包括绝缘插入层诱导的PMA，由于界面对称断裂引起的应力诱导的PMA，PMA和晶格失配诱导的PMA中的至少一种。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

2. 发明授权

US08679301B2 Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting 失效
标题翻译：通过实施Ti粘贴，RF MgO TMR势垒层工艺的重复性
公开(公告)号：US08679301B2
公开(公告)日：2014-03-25
申请号：US11832318
申请日：2007-08-01
申请人： Chang Man Park
发明人： Chang Man Park
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/081 , C23C14/16 , C23C16/4404
摘要： A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.
摘要翻译：一种用于在沉积室中进行粘贴的方法和装置。该方法包括通过溅射Ti靶在至少沉积室的内部上沉积Ti粘贴层，从而减少沉积室中的污染物以便随后的沉积。该方法还包括在至少沉积室的内部部分上沉积Ti粘贴层之后，在沉积室内的晶片上沉积第二层。第二层包括MgO和Mg中的至少一种。

3. 发明授权

US08427791B2 Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same 有权
标题翻译：具有磁性插入层的磁性隧道结及其制造方法
公开(公告)号：US08427791B2
公开(公告)日：2013-04-23
申请号：US12953233
申请日：2010-11-23
申请人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
发明人： Zheng Gao , Liubo Hong , Richard Hsiao , Sangmun Oh , Chando Park , Chang-Man Park
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1121
摘要： According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.
摘要翻译：根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层层具有纹理的面心立方（fcc）结构。第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。根据更多实施例描述附加的磁头结构和制造磁头的方法。

4. 发明申请

US20120156390A1 MULTI-ANGLE HARD BIAS DEPOSITION FOR OPTIMAL HARD-BIAS DEPOSITION IN A MAGNETIC SENSOR 审中-公开
标题翻译：用于磁传感器中最佳硬度偏移的多角度硬偏置沉积
公开(公告)号：US20120156390A1
公开(公告)日：2012-06-21
申请号：US12975084
申请日：2010-12-21
申请人： Satoru Araki , Shin Funada , Insik Jin , Quang Le , Simon H. Liao , Chang-Man Park
发明人： Satoru Araki , Shin Funada , Insik Jin , Quang Le , Simon H. Liao , Chang-Man Park
IPC分类号： B05D3/06 , B05D3/10 , B05D5/00
CPC分类号： G01R33/098 , B82Y40/00 , G11B5/3163 , G11B5/3932 , G11B5/398 , H01F10/123 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A method for manufacturing a magnetic sensor that result in improved magnetic bias field to the sensor, improved shield to hard bias spacing and a flatter top shield profile. The method includes a multi-angled deposition of the hard bias structure. After forming the sensor stack a first hard bias layer is deposited at an angle of about 70 degrees relative to horizontal. This is a conformal deposition. Then, a second deposition is performed at an angle of about 90 degrees relative to horizontal. This is a notching deposition, that results in notches being formed adjacent to the sensor stack. Then, a hard bias capping layer is deposited at an angle of about 55 degrees relative to horizontal. This is a leveling deposition that further flattens the surface on which the top shield can be electroplated.
摘要翻译：一种用于制造磁传感器的方法，其导致对传感器的改善的磁偏置场，改善了对硬偏置间隔的屏蔽和较平坦的顶部屏蔽轮廓。该方法包括硬偏置结构的多角度沉积。在形成传感器堆叠之后，第一硬偏压层以相对于水平面约70度的角度沉积。这是一个保形沉积。然后，以相对于水平方向大约90度的角度执行第二沉积。这是一种凹陷沉积，导致在传感器堆叠附近形成凹口。然后，相对于水平度以大约55度的角度沉积硬偏压盖层。这是一种平整沉积物，其进一步平坦化可以电镀顶部屏蔽的表面。

5. 发明申请

US20120152891A1 METHOD FOR MANUFACTURING A MAGNETIC TAPE HEAD USING A TMR SENSOR 有权
标题翻译：使用TMR传感器制造磁带头的方法
公开(公告)号：US20120152891A1
公开(公告)日：2012-06-21
申请号：US12973791
申请日：2010-12-20
申请人： Diane L. Brown , Quang Le , Chang-Man Park , David J. Seagle , Eileen Yan
发明人： Diane L. Brown , Quang Le , Chang-Man Park , David J. Seagle , Eileen Yan
IPC分类号： G11B5/187
CPC分类号： G11B5/00826 , G11B5/3163 , G11B5/3909 , G11B5/3977
摘要： A method for manufacturing a magnetic tape head having a data sensor and a servo sensor. The data sensor and servo sensor are each separated from first and second magnetic shields by a non-magnetic gap layer, and the gap thickness for the servo sensor is larger than the gap thickness for the data sensor. The method involves depositing a first gap layer over shield structures, then depositing a second gap layer using a liftoff process to remove the second gap layer over the data sensor region. A plurality of sensor layers are then deposited, and a stripe height defining mask structure is formed over the data and servo sensor regions, the mask having a back edge that is configured to define a stripe height of the data and servo sensors. An ion milling is then performed to define the stripe height and to remove gap material from the field.
摘要翻译：一种具有数据传感器和伺服传感器的磁带头的制造方法。数据传感器和伺服传感器通过非磁隙层与第一和第二磁屏蔽分开，伺服传感器的间隙厚度大于数据传感器的间隙厚度。该方法包括在屏蔽结构上沉积第一间隙层，然后使用提升过程沉积第二间隙层以去除数据传感器区域上的第二间隙层。然后沉积多个传感器层，并且在数据和伺服传感器区域上形成条纹高度限定掩模结构，掩模具有配置为限定数据和伺服传感器的条带高度的后边缘。然后进行离子铣削以限定条带高度并从场中移除间隙材料。

6. 发明申请

US20120106006A1 MAGNETIC SENSOR HAVING IMPROVED RESISTANCE TO THERMAL STRESS INDUCED INSTABILITY 有权
标题翻译：具有改善耐热应力诱发不稳定性的磁传感器
公开(公告)号：US20120106006A1
公开(公告)日：2012-05-03
申请号：US12914926
申请日：2010-10-28
申请人： Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
发明人： Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
IPC分类号： G11B5/48 , G11B5/187
CPC分类号： G11B5/607 , B82Y25/00 , G01R33/093 , G11B5/3106 , G11B5/3133 , G11B5/3906 , G11B5/3967
摘要： A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.
摘要翻译：磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。由于改进了固定层钉扎，提高了热稳定性。读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。第一层包括Fe含量高于20-30原子％的Co-Fe层。钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层和在Co-Fe-B层上形成的第二层Co-Fe层。

7. 发明申请

US20110230570A1 MASK PACK COMPRISING COSMETIC COTTON-LIKE MATERIAL PREPARED FROM PAPER MULBERRY 有权
标题翻译：来自纸张MULBERRY的包装化妆棉类材料的包装
公开(公告)号：US20110230570A1
公开(公告)日：2011-09-22
申请号：US13131774
申请日：2009-11-27
申请人： Sun Sang Kwon , Myeong Hun Yeom , Chang Man Park , Duck Hee Kim , Han Kon Kim
发明人： Sun Sang Kwon , Myeong Hun Yeom , Chang Man Park , Duck Hee Kim , Han Kon Kim
IPC分类号： A61K8/97 , D21C9/02 , A61Q19/00
CPC分类号： A61K8/0212 , A61K8/027 , A61K8/97 , A61Q19/00
摘要： The present invention relates to a cosmetic cotton-like material having excellent air permeability that is prepared from the paper mulberry by removing fiber-binding substances such as pectin and lignin from the paper mulberry fiber, a preparation method thereof and a mask pack comprising the cotton-like material.
摘要翻译：本发明涉及通过从桑叶纤维中除去纤维结合物质如果胶和木质素从桑叶制备的具有优异透气性的化妆棉类材料，其制备方法和包含棉花的面膜包类材料。

8. 发明申请

US20090257152A1 MAGNETORESISTIVE SENSOR WITH HIGH TMR AND LOW RA 有权
标题翻译：具有高TMR和低RA的磁传感器
公开(公告)号：US20090257152A1
公开(公告)日：2009-10-15
申请号：US12345733
申请日：2008-12-30
申请人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
发明人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
摘要翻译：一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。

9. 发明授权

US07595967B1 Method for fabricating a spacer layer for a magnetoresistive element 失效
标题翻译：制造用于磁阻元件的间隔层的方法
公开(公告)号：US07595967B1
公开(公告)日：2009-09-29
申请号：US10936172
申请日：2004-09-07
申请人： Ki-Seok Moon , Chang-Man Park
发明人： Ki-Seok Moon , Chang-Man Park
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01L43/08 , H01L43/12 , Y10T29/49021
摘要： A method and system for manufacturing a spacer layer in a magnetoresistive element are described. The spacer layer resides between a free layer and a pinned layer. The method and system include providing a first metallic layer and oxidizing the first metallic layer in a first environment including at least oxygen and a first gas inert with respect to the first metallic layer. The method and system further include providing a second metallic layer and oxidizing the second metallic layer in a second environment including at least oxygen and a first gas inert with respect to the first metallic layer.
摘要翻译：描述了用于制造磁阻元件中的间隔层的方法和系统。间隔层位于自由层和钉扎层之间。该方法和系统包括提供第一金属层并在第一环境中氧化第一金属层，该第一环境至少包括氧和相对于第一金属层惰性的第一气体。该方法和系统还包括提供第二金属层并在第二环境中氧化第二金属层，该第二环境至少包括氧和相对于第一金属层惰性的第一气体。

10. 发明授权

US09129690B2 Method and system for providing magnetic junctions having improved characteristics 有权
标题翻译：提供具有改进特性的磁结的方法和系统
公开(公告)号：US09129690B2
公开(公告)日：2015-09-08
申请号：US13553965
申请日：2012-07-20
申请人： Chang-Man Park , Dustin William Erickson , Mohamad Towfik Krounbi
发明人： Chang-Man Park , Dustin William Erickson , Mohamad Towfik Krounbi
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01L43/12
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12
摘要： A method and apparatus provide a magnetic memory including magnetic junctions on a substrate. The apparatus include an RIE chamber and an ion milling chamber. The chambers are coupled such that the magnetic memory is movable between the chambers without exposing the magnetic memory to ambient. The method provides magnetic junction layers and a hard mask layer on the magnetic junction layers. A hard mask is formed from the hard mask layer using an RIE. The magnetic junction layers are ion milled after the RIE and without exposing the magnetic memory to an ambient after the RIE. The ion milling defines at least part of each magnetic junction. A magnetic junction may be provided. The magnetic junction includes pinned, nonmagnetic spacer, and free layers. The free layer has a width of not more than twenty nanometers and is switchable when a write current is passed through the magnetic junction.
摘要翻译：一种方法和装置提供包括在基底上的磁结的磁存储器。该装置包括RIE室和离子研磨室。这些室被耦合，使得磁存储器可以在室之间移动，而不将磁存储器暴露于环境。该方法在磁结层上提供磁结层和硬掩模层。使用RIE从硬掩模层形成硬掩模。在RIE之后，磁结层被离子研磨，并且在RIE之后没有将磁存储器暴露在环境中。离子铣削限定了每个磁结的至少一部分。可以提供磁结。磁结包括固定的，非磁性的隔离层和自由层。自由层具有不超过二十纳米的宽度，并且当写入电流通过磁性结时可自由切换。

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