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1. 发明申请

US20150137259A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150137259A1
公开(公告)日：2015-05-21
申请号：US14453705
申请日：2014-08-07
申请人： Hauk HAN , Yu Min KIM , Ki Hyun YOON , Myoung Bum LEE , Chang Won LEE , Joo Yeon HA
发明人： Hauk HAN , Yu Min KIM , Ki Hyun YOON , Myoung Bum LEE , Chang Won LEE , Joo Yeon HA
IPC分类号： H01L29/417 , H01L27/088 , H01L29/45
CPC分类号： H01L29/4175 , H01L21/76856 , H01L21/76879 , H01L23/5226 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate including a conductive region, an insulating layer disposed on the substrate and including an opening exposing the conductive region, and a conductive layer buried within the opening and including a first region disposed on inner side walls of the opening and a second region disposed within the first region. The first region includes a plurality of first crystal grains and the second region includes a plurality of second crystal grains. The pluralities of first and second crystal grains are separated from each other at a boundary formed between the first and second regions.
摘要翻译：一种半导体器件包括：衬底，其包括导电区域，绝缘层设置在衬底上并且包括暴露导电区域的开口;以及导电层，其被埋在开口内，并且包括设置在开口的内侧壁上的第一区域和第二区域设置在第一区域内。第一区域包括多个第一晶粒，第二区域包括多个第二晶粒。多个第一和第二晶粒在第一和第二区域之间形成的边界处彼此分离。

2. 发明授权

US08581230B2 Light-emitting device having enhanced luminescence by using surface plasmon resonance and method of fabricating the same 有权
标题翻译：具有通过使用表面等离子体共振增强的发光的发光器件及其制造方法
公开(公告)号：US08581230B2
公开(公告)日：2013-11-12
申请号：US12977195
申请日：2010-12-23
申请人： Tae-ho Kim , Chang-won Lee , Byoung-lyong Choi , Kyung-sang Cho
发明人： Tae-ho Kim , Chang-won Lee , Byoung-lyong Choi , Kyung-sang Cho
IPC分类号： H01L33/04
CPC分类号： H01L51/502 , H01L27/3211 , H01L51/5048 , H01L51/5262
摘要： A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.
摘要翻译：量子点发光装置包括基板，第一电极，空穴注入层（“HIL”），空穴传输层（“HTL”），发光层，电子传输层（“ETL”），埋在ETL中的多个纳米等离子体颗粒和第二电极。

3. 发明申请

US20130070459A1 OPTICAL DEVICES AND METHODS OF CONTROLLING PROPAGATION DIRECTIONS OF LIGHT FROM THE OPTICAL DEVICES 有权
标题翻译：光学装置和控制来自光学装置的光的传播方向的方法
公开(公告)号：US20130070459A1
公开(公告)日：2013-03-21
申请号：US13549808
申请日：2012-07-16
申请人： Jin-eun Kim , Q-han Park , Chang-won Lee , Yeon-sang Park , Young-geun Roh , Hwan-soo Suh , Jong-ho Choe
发明人： Jin-eun Kim , Q-han Park , Chang-won Lee , Yeon-sang Park , Young-geun Roh , Hwan-soo Suh , Jong-ho Choe
IPC分类号： F21V13/02 , B23P11/00 , F21K99/00 , F21V13/12 , B82Y40/00 , B82Y20/00
CPC分类号： B82Y20/00 , Y10T29/49826
摘要： An optical device may include a substrate, a metal layer on the substrate, at least one first nano-structure in the layer, and at least one second nano-structure in the layer. The at least one first nano-structure may include a light source. The at least one first and second nano-structures may be spaced apart. A method of controlling a propagation direction of light output from an optical device that includes a metal layer on a substrate may include disposing first and second nano-structures in the layer; disposing at least one light source in the first nano-structure; and controlling the propagation direction of the light output from the at least one light source by changing at least one of a shape of the first nano-structure, a shape of the second nano-structure, a size of the first nano-structure, a size of the second nano-structure, and an interval between the first and second nano-structures.
摘要翻译：光学器件可以包括衬底，衬底上的金属层，该层中的至少一个第一纳米结构以及该层中的至少一个第二纳米结构。所述至少一个第一纳米结构可以包括光源。所述至少一个第一和第二纳米结构可以间隔开。控制从包括基板上的金属层的光学装置输出的光的传播方向的方法可以包括在该层中设置第一和第二纳米结构; 在所述第一纳米结构中设置至少一个光源; 并且通过改变第一纳米结构的形状，第二纳米结构的形状，第一纳米结构的尺寸，第一纳米结构的尺寸，第二纳米结构的尺寸以及第一和第二纳米结构之间的间隔。

4. 发明申请

US20120224998A1 Exhaust Gas Denitrifying System having Noise-Reduction Structure 有权
标题翻译：具有降噪结构的废气脱氮系统
公开(公告)号：US20120224998A1
公开(公告)日：2012-09-06
申请号：US13220303
申请日：2011-08-29
申请人： Soo-Tae Lee , Ok-Ryeol Song , Chang-Won Lee , Ha-Geun Kang
发明人： Soo-Tae Lee , Ok-Ryeol Song , Chang-Won Lee , Ha-Geun Kang
IPC分类号： B01D53/56
CPC分类号： B01D53/8631 , B01D53/8696 , B01D2251/2067 , F01N1/10 , F01N3/2066 , F01N3/2828 , F01N3/2885 , F01N3/2892 , F01N3/30 , F01N13/0097 , F01N2230/04 , F01N2240/20 , F01N2330/06 , F01N2330/32 , F01N2330/325 , F01N2570/14 , F01N2610/02 , Y02A50/2344 , Y02T10/24
摘要： An exhaust gas denitrifying system having a noise-reduction structure includes a reactor in which a chemical reaction that converts nitrogen oxides included in exhaust gas into nitrogen by denitrifying the nitrogen oxides using a catalyst takes place. The reactor includes a catalytic filter unit coated with a catalyst and provided with a plurality of through-holes through which exhaust gas passes; and a noise-reducing unit for removing noise from the exhaust gas denitrified by the catalytic filter unit. The reactor denitrifies the nitrogen oxides, and simultaneously reduces the noise, thus reducing the size of the exhaust gas denitrifying system.
摘要翻译：具有降噪结构的废气脱氮系统包括反应器，其中发生通过使用催化剂使氮氧化物脱氮而将排气中包含的氮氧化物转化为氮的化学反应。反应器包括涂覆有催化剂的催化过滤器单元并且设置有多个通过排气的通孔; 以及噪声降低单元，用于消除由催化过滤器单元反硝化的废气中的噪声。反应器使氮氧化物脱氮，同时降低噪声，从而减小废气脱氮系统的尺寸。

5. 发明申请

US20120032138A1 LIGHT-EMITTING DEVICE HAVING ENHANCED LUMINESCENCE BY USING SURFACE PLASMON RESONANCE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：通过使用表面等离子体共振具有增强的发光的发光装置及其制造方法
公开(公告)号：US20120032138A1
公开(公告)日：2012-02-09
申请号：US12977195
申请日：2010-12-23
申请人： Tae-ho KIM , Chang-won LEE , Byoung-lyong CHOI , Kyung-sang CHO
发明人： Tae-ho KIM , Chang-won LEE , Byoung-lyong CHOI , Kyung-sang CHO
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L51/502 , H01L27/3211 , H01L51/5048 , H01L51/5262
摘要： A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.
摘要翻译：量子点发光装置包括基板，第一电极，空穴注入层（“HIL”），空穴传输层（“HTL”），发光层，电子传输层（“ETL”），埋在ETL中的多个纳米等离子体颗粒和第二电极。

6. 发明授权

US08034701B2 Methods of forming recessed gate electrodes having covered layer interfaces 失效
标题翻译：形成具有覆盖层界面的凹陷栅电极的方法
公开(公告)号：US08034701B2
公开(公告)日：2011-10-11
申请号：US12533672
申请日：2009-07-31
申请人： Byung-Hak Lee , Chang-Won Lee , Hee-Sook Park , Woong-Hee Sohn , Sun-Pil Youn , Jong-ryeol Yoo
发明人： Byung-Hak Lee , Chang-Won Lee , Hee-Sook Park , Woong-Hee Sohn , Sun-Pil Youn , Jong-ryeol Yoo
IPC分类号： H01L21/3205
CPC分类号： H01L27/10876 , H01L21/28123 , H01L21/823437 , H01L27/10891 , H01L29/517 , H01L29/66621 , H01L29/7834
摘要： Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers.
摘要翻译：形成栅电极的方法可以通过在衬底中形成沟槽来形成，保形地形成多晶硅层，以在沟槽中形成多晶硅保形层，限定由多晶硅保形层围绕的凹槽，其中形成多晶硅保形层以延伸从衬底的表面向上并具有突起，并且突起具有邻近衬底表面的垂直外侧壁，在凹部中形成钨层以形成上表面，该上表面包括多晶硅保形层和钨之间的界面并且形成与多晶硅共形层和钨层的顶表面直接接触而没有任何中间层的覆盖层。

7. 发明授权

US07920228B2 Dual liquid crystal display device 有权
标题翻译：双液晶显示装置
公开(公告)号：US07920228B2
公开(公告)日：2011-04-05
申请号：US12385213
申请日：2009-04-01
申请人： Kyu-Han Bae , Shawn Kim , James Kim , Chang-Won Lee , Hwal Choi , David Lee
发明人： Kyu-Han Bae , Shawn Kim , James Kim , Chang-Won Lee , Hwal Choi , David Lee
IPC分类号： G02F1/133
CPC分类号： G02F1/1333 , G02F1/133615 , G02F2001/133342 , G02F2001/133391 , G02F2203/01 , G02F2203/02
摘要： A dual liquid crystal display device includes a transmissive liquid crystal display panel; a reflective liquid crystal display panel formed on the same substrate as the transmissive liquid crystal display panel; a first light guide block disposed under the transmissive liquid crystal display panel and having dot patterns formed on a first surface thereof; a second light guide block disposed under the reflective liquid crystal display panel and having V-grooves formed on a first surface thereof and dot pattern formed on a second surface thereof; a light source disposed adjacent to the first light guide block; and a housing in which the transmissive and reflective liquid crystal display panels, the light source and the light guide blocks are seated, the housing having an opening to correspond to an image display surface of the reflective liquid crystal display panel.
摘要翻译：双液晶显示装置包括透射型液晶显示面板; 形成在与透射型液晶显示面板相同的基板上的反射型液晶显示面板; 第一导光块，设置在所述透射型液晶显示面板的下方，具有在其第一面上形成的点图案; 第二导光块，设置在所述反射型液晶显示面板的下方，在其第一面上形成有V形槽，在其第二面上形成有点图案; 邻近所述第一导光块设置的光源; 以及壳体，其中所述透射和反射的液晶显示面板，所述光源和所述导光块就座，所述壳体具有与所述反射型液晶显示面板的图像显示面对应的开口。

8. 发明授权

US07875939B2 Semiconductor device including an ohmic layer 有权
标题翻译：包括欧姆层的半导体器件
公开(公告)号：US07875939B2
公开(公告)日：2011-01-25
申请号：US12453198
申请日：2009-05-01
申请人： Hee-Sook Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Sun-Pil Youn , Dong-Chan Lim , Jae-Hwa Park , Jang-Hee Lee , Woong-Hee Sohn
发明人： Hee-Sook Park , Gil-Heyun Choi , Chang-Won Lee , Byung-Hak Lee , Sun-Pil Youn , Dong-Chan Lim , Jae-Hwa Park , Jang-Hee Lee , Woong-Hee Sohn
IPC分类号： H01L23/532
CPC分类号： H01L29/4933 , C23C16/42 , H01L21/28061 , H01L21/28194 , H01L21/28556 , H01L21/76846 , H01L29/517
摘要： In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.
摘要翻译：在欧姆层和形成欧姆层的方法中，包括欧姆层的栅极结构和具有欧姆层的金属布线，欧姆层使用包含钨和硅的硅化钨形成，原子比在约 1:5至约1:15。可以在室内使用包含钨源气体和硅源气体的反应气体，在约1.0:25.0至约1.0:16.0.0的范围内的分压比获得硅化钨。反应气体可以具有在室的总内部压力的约2.05％至约30.0％的范围内的分压。当欧姆层用于诸如栅极结构或金属布线的导电结构时，导电结构可以具有降低的电阻。

9. 发明授权

US07772637B2 Semiconductor devices including gate structures and leakage barrier oxides 有权
标题翻译：包括栅极结构和漏电阻氧化物的半导体器件
公开(公告)号：US07772637B2
公开(公告)日：2010-08-10
申请号：US12401087
申请日：2009-03-10
申请人： Woong-Hee Sohn , Chang-Won Lee , Sun-Pil Youn , Gil-Heyun Choi , Byung-Hak Lee , Jong-Ryeol Yoo , Hee-Sook Park
发明人： Woong-Hee Sohn , Chang-Won Lee , Sun-Pil Youn , Gil-Heyun Choi , Byung-Hak Lee , Jong-Ryeol Yoo , Hee-Sook Park
IPC分类号： H01L21/00
CPC分类号： H01L21/28273 , H01L29/42324
摘要： Methods of forming a semiconductor device may include forming a tunnel oxide layer on a semiconductor substrate, forming a gate structure on the tunnel oxide layer, forming a leakage barrier oxide, and forming an insulating spacer. More particularly, the tunnel oxide layer may be between the gate structure and the substrate, and the gate structure may include a first gate electrode on the tunnel oxide layer, an inter-gate dielectric on the first gate electrode, and a second gate electrode on the inter-gate dielectric with the inter-gate dielectric between the first and second gate electrodes. The leakage barrier oxide may be formed on sidewalls of the second gate electrode. The insulating spacer may be formed on the leakage barrier oxide with the leakage barrier oxide between the insulating spacer and the sidewalls of the second gate electrode. In addition, the insulating spacer and the leakage barrier oxide may include different materials. Related structures are also discussed.
摘要翻译：形成半导体器件的方法可以包括在半导体衬底上形成隧道氧化物层，在隧道氧化物层上形成栅极结构，形成漏电阻氧化物，并形成绝缘衬垫。更具体地，隧道氧化物层可以在栅极结构和衬底之间，并且栅极结构可以包括隧道氧化物层上的第一栅极电极，第一栅电极上的栅极间电介质和第二栅电极所述栅极间电介质与所述第一和第二栅电极之间的栅极间电介质。漏电阻氧化物可以形成在第二栅电极的侧壁上。绝缘间隔物可以在绝缘隔离物和第二栅电极的侧壁之间的泄漏阻挡氧化物形成在漏电阻氧化物上。此外，绝缘间隔物和漏电阻氧化物可以包括不同的材料。还讨论了相关结构。

10. 发明申请

US20100112772A1 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100112772A1
公开(公告)日：2010-05-06
申请号：US12460945
申请日：2009-07-27
申请人： Eun-ji Jung , Sang-woo Lee , Jeong-gil Lee , Gil-heyun Choi , Chang-won Lee , Byung-hee Kim , Jin-ho Park
发明人： Eun-ji Jung , Sang-woo Lee , Jeong-gil Lee , Gil-heyun Choi , Chang-won Lee , Byung-hee Kim , Jin-ho Park
IPC分类号： H01L21/336
CPC分类号： H01L27/11573 , H01L21/28123 , H01L21/28282
摘要： A method of fabricating a semiconductor device includes: forming a first polysilicon layer having a first thickness in a peripheral circuit region formed on a substrate; forming a stack structure comprising a first tunneling insulating layer, a charge trap layer, and a blocking insulating layer in a memory cell region formed on the substrate; forming a second polysilicon layer having a second thickness that is less than the first thickness on the blocking insulating layer; and forming gate electrodes by siliciding the first and second polysilicon layers.
摘要翻译：一种制造半导体器件的方法包括：在形成在衬底上的外围电路区域中形成具有第一厚度的第一多晶硅层; 在形成在所述基板上的存储单元区域中形成包括第一隧道绝缘层，电荷陷阱层和阻挡绝缘层的堆叠结构; 在所述阻挡绝缘层上形成具有小于所述第一厚度的第二厚度的第二多晶硅层; 以及通过硅化第一和第二多晶硅层来形成栅电极。

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