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1. 发明公开

KR1020090119462A 전계 재생/기록 헤드, 전계 재생/기록 헤드의 제조방법 및전계 재생/기록 헤드를 포함하는 정보저장장치 无效
标题翻译：电场读/写头，制造电场读/写头的方法和包含电场读/写头的信息存储装置
公开(公告)号：KR1020090119462A
公开(公告)日：2009-11-19
申请号：KR1020080045522
申请日：2008-05-16
申请人： 시게이트 테크놀로지 인터내셔날
发明人： 고형수 , 유인경 , 정주환 , 박철민
IPC分类号： G11B5/127 , G11B9/14 , G11B9/02 , G11B9/08
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： PURPOSE: A reproducing/recording head manufacturing method and an information storage device including an electric field reproducing/recording head are provided to perform reading/writing function by using electric field. CONSTITUTION: A reproducing/recording head manufacturing method and an information storage device including an electric field reproducing/recording head include a main body(1) and a reading head. The reading head equips a source and a drain connected on a channel layer equipped on ARS. A writing head is equipped on the surface vertical with the ABS.
摘要翻译：目的：提供一种再现/记录头制造方法和包括电场再现/记录头的信息存储装置，以通过使用电场来执行读/写功能。构成：再现/记录头制造方法以及包括电场再现/记录头的信息存储装置包括主体（1）和读取头。阅读头配备一个连接在ARS上的通道层上的源极和漏极。书写头与ABS垂直安装。

2. 发明公开

KR1020080081466A 정보 저장 장치 및 트래킹 위치 에러 신호를 발생하는 장치 有权
标题翻译：数据存储设备和产生跟踪位置错误信号的设备
公开(公告)号：KR1020080081466A
公开(公告)日：2008-09-10
申请号：KR1020070021477
申请日：2007-03-05
申请人： 엘지전자 주식회사
发明人： 이충우 , 김영식 , 문준 , 정지영 , 정정주
IPC分类号： G11B21/10 , G11B9/14
CPC分类号： G11B9/1481 , B82Y10/00 , Y10S977/947
摘要： A data storage apparatus and an apparatus for generating a tracking position error signal are provided to reduce the manufacturing process by forming a servo pattern and a sync pattern, from which a tracking position error signal is generated, on a recording medium. A data storage apparatus comprises a recording medium(100), and a storage part. The recording medium has patterns formed on a portion of the upper part to generate a tracking position error signal. The storage part generates a tracking position error signal through a signal detected from the patterns by using an AFM(Atomic Force Microscopy), and stores data on the recording medium by using the tracking position error signal.
摘要翻译：提供了一种用于产生跟踪位置误差信号的数据存储装置和装置，用于通过在记录介质上形成伺服模式和产生跟踪位置误差信号的同步模式来减少制造过程。数据存储装置包括记录介质（100）和存储部件。记录介质具有形成在上部的一部分上的图案，以产生跟踪位置误差信号。存储部分通过使用AFM（原子力显微镜）从图案检测到的信号产生跟踪位置误差信号，并通过使用跟踪位置误差信号将数据存储在记录介质上。

3. 发明公开

KR1020080070998A 플라즈몬 전달을 이용한 광메모리 소자 有权
标题翻译：使用PLASMON传输的光学存储器件
公开(公告)号：KR1020080070998A
公开(公告)日：2008-08-01
申请号：KR1020070009013
申请日：2007-01-29
申请人： 삼성전자주식회사
发明人： 설광수 , 신상민
IPC分类号： G11B9/00 , G11B9/12 , G11B9/14 , B82Y10/00
摘要： An optical memory device using plasmon transfer is provided to phase-change nano dots by scanning light to the nano dots so as to transfer light instead of transferring electrons, thereby obtaining an optical memory using the light and storing data in the memory easily. An optical memory device comprises a light input part(110), a light output part(120), a plurality of nano dots(N1~N5), and a light exciting part(140). Light is inputted to the light input part which is placed on a substrate(100). The light output part outputs light. The nano dots, made of GeSbRTe, are placed between the light input part and the light output part. The light exciting part is formed on one side of the nano dot to phase-change the nano dot by scanning light to the nano dot.
摘要翻译：提供了使用等离子体激元转移的光学存储器件，通过向纳米点扫描光来相变纳米点，以便转移光而不是传递电子，从而获得使用光的光学存储器并且容易地将数据存储在存储器中。光存储器件包括光输入部分（110），光输出部分（120），多个纳米点（N1〜N5）和光激发部分（140）。光被输入到放置在基板（100）上的光输入部。光输出部分输出光。由GeSbRTe制成的纳米点位于光输入部和光输出部之间。光激发部分形成在纳米点的一侧，通过向纳米点扫描光来相变纳米点。

4. 发明授权

KR100842923B1 측벽 영역과 이등방성 습식 식각을 이용한 증가형 반도체탐침의 제조 방법 및 이를 이용한 정보저장장치 失效
标题翻译：使用异相湿蚀刻和侧壁制造增强模式半导体探针的方法，以及使用其的信息存储装置
公开(公告)号：KR100842923B1
公开(公告)日：2008-07-03
申请号：KR1020070022550
申请日：2007-03-07
申请人： 삼성전자주식회사 , 재단법인서울대학교산학협력재단
发明人： 고형수 , 박병국 , 홍승범 , 박철민 , 최우영 , 김종필 , 송재영 , 김상완
IPC分类号： G11B9/14 , G11B9/02
CPC分类号： H01L29/7834 , B82Y10/00 , G11B9/1409 , H01L21/28123 , H01L29/66636
摘要： A method of manufacturing an enhancement semiconductor probe and an information storage device using the same are provided to reduce a process variable in device performance and to increase reliability of mass production by anisotropic-wet-etching a silicon substrate using side-walls. A method of manufacturing an enhancement semiconductor probe comprises the steps of: forming a first etching mask pattern(110a) on a silicon substrate(100c) to form a tip part of the probe in a first direction and forming side-wall areas at two sides of the first etching mask pattern; anisotropic-etching the silicon substrate to form two inclined surfaces of the probe; forming source and drain areas(160,170,180,190) on the silicon substrate by injecting dopants, using the side-wall area as masks, and removing the side-wall areas; removing the first etching mask pattern; forming a second etching mask pattern to form a tip part of the probe in a second direction; forming space layers at two sides of the second etching mask pattern; and etching the silicon substrate by photographing and etching processes and removing the space layers.
摘要翻译：提供一种制造增强半导体探针的方法和使用其的信息存储装置，以减少器件性能中的工艺变量，并且通过使用侧壁对硅衬底进行各向异性湿蚀刻来提高批量生产的可靠性。一种制造增强型半导体探针的方法包括以下步骤：在硅衬底（100c）上形成第一蚀刻掩模图案（110a），以在第一方向上形成探针的尖端部分，并在两侧形成侧壁区域的第一蚀刻掩模图案; 各向异性蚀刻硅衬底以形成探针的两个倾斜表面; 通过注入掺杂剂在硅衬底上形成源极和漏极区域（160,170,180,190），使用侧壁区域作为掩模，并去除侧壁区域; 去除第一蚀刻掩模图案; 形成第二蚀刻掩模图案以在第二方向上形成探针的末端部分; 在第二蚀刻掩模图案的两侧形成空间层; 并通过拍摄和蚀刻工艺蚀刻硅衬底并去除空间层。

5. 发明授权

KR100842890B1 탐침 또는 전도성 구조를 이용한 강유전층의 비트 기록 방법 失效
标题翻译：使用探针或导电结构的电磁介质中的位记录方法
公开(公告)号：KR100842890B1
公开(公告)日：2008-07-03
申请号：KR1020070008059
申请日：2007-01-25
申请人： 삼성전자주식회사
发明人： 홍승범 , 김윤석 , 노광수 , 좌성훈 , 사이먼 , 김지윤
IPC分类号： G11B9/14 , G11B9/02
CPC分类号： G11B9/02
摘要： A bit recording method in ferroelectric media using a probe or conductive structure is provided to apply base bias voltage between switching voltages so as to prevent changes in potential and record a small bit. A bit recording method in ferroelectric media comprises the steps of: contacting a probe with the surface of a recording medium and applying switching voltages to the recording medium and the probe for recording bits; and equalizing the potential of the probe and the potential of the recording medium surface to prevent a potential distortion by applying base bias voltage between the switching voltages, where the base bias voltage is a voltage between the negative switch voltage and the ground voltage when recording '0' bit, and a voltage between the ground voltage and the positive switching voltage when recording '1' bit.
摘要翻译：提供使用探针或导电结构的铁电介质中的位记录方法，以在切换电压之间施加基极偏置电压，以便防止电位变化并记录小位。在铁电介质中的位记录方法包括以下步骤：将探针与记录介质的表面接触并向记录介质和探针施加开关电压以记录位; 并且通过在开关电压之间施加基极偏置电压来平衡探针的电位和记录介质表面的电位以防止电位失真，其中基极偏置电压是记录“负极”时的负开关电压和接地电压之间的电压 0'位，当记录“1”位时，接地电压与正切换电压之间的电压。

6. 发明公开

KR1020070108026A 스캐닝 프로브 마이크로스코프 정보 저장장치 및 그의제조방법 无效
标题翻译：扫描探针显微镜数据存储设备及其制造方法
公开(公告)号：KR1020070108026A
公开(公告)日：2007-11-08
申请号：KR1020060040755
申请日：2006-05-04
申请人： 엘지전자 주식회사
发明人： 이선영 , 남효진
IPC分类号： G11B9/14 , G11B9/10
摘要： A device for keeping information of an SPM, and a manufacturing method thereof are provided to improve measurement accuracy and to prevent a wear of a probe. A device for keeping information of an SPM comprises a cantilever body(110), a probe(120), and a heater(130). The probe is connected with the cantilever body and formed by a diamond thin film. The heater is mated to the probe positioned on the cantilever. The heater is made of the diamond thin film, and the cantilever body is made of a silicon nitride film. A manufacturing method thereof includes a step of forming a groove for forming the probe on a silicon substrate; a step of forming the cantilever body on the silicon substrate; a step of forming the probe by vacuum-plating the diamond thin film at the groove; and a step of positioning a heater at an upper part of the probe.
摘要翻译：提供了用于保持SPM信息的装置及其制造方法，以提高测量精度并防止探针的磨损。用于保持SPM信息的装置包括悬臂体（110），探针（120）和加热器（130）。探头与悬臂体连接，由金刚石薄膜形成。加热器配合到位于悬臂上的探头。加热器由金刚石薄膜制成，悬臂体由氮化硅薄膜制成。其制造方法包括在硅衬底上形成用于形成探针的沟槽的步骤; 在硅衬底上形成悬臂体的步骤; 通过在槽处真空镀金刚石薄膜来形成探针的步骤; 以及将加热器定位在探针的上部的步骤。

7. 发明授权

KR100746769B1 정보 저장용 캔틸레버, 그를 갖는 정보 저장 장치 및 제조방법 失效
标题翻译：用于存储数据的悬臂，具有悬臂的数据存储装置及其制造方法
公开(公告)号：KR100746769B1
公开(公告)日：2007-08-06
申请号：KR1020050112942
申请日：2005-11-24
申请人： 엘지전자 주식회사
发明人： 김영식
IPC分类号： G11B9/14
摘要： 본 발명은 정보 저장용 캔틸레버, 그를 갖는 정보 저장 장치 및 제조 방법에 관한 것으로, 캔틸레버부 하부에 히터와 연결되는 전극라인을 형성하여, 캔틸레버부 상부에 형성되는 압전센서의 크기를 크게 할 수 있으므로, 정보 저장용 캔틸레버가 정보 기록을 수행할 시, 정보 감지 효율을 증가시킬 수 있는 장점이 있다.
또한, 본 발명은 캔틸레버부 하부에 전극라인을 형성하여, 캔틸레버부 상부와 하부에 존재하는 구조물들이 열적으로 대칭되는 구조를 구현할 수 있으므로, 캔틸레버부의 휘어짐을 줄일 수 있는 장점이 있다.
캔틸레버, 저장, 정보, 상부전극, 하부, 전극라인, 히터, 센서

8. 发明授权

KR100718154B1 INFORMATION MEDIA A METHOD FOR WRITING AND REPRODUCING INFORMATION, AND DEVICE ADOPTING THE SAME 无效
标题翻译：信息媒介写作和复制信息的方法以及采用该方法的装置
公开(公告)号：KR100718154B1
公开(公告)日：2007-05-08
申请号：KR20060016226
申请日：2006-02-20
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： NAM YUN WOO , MIN DONG KI
IPC分类号： G11B9/14 , G11B9/02
CPC分类号： G11B9/02 , G01Q80/00 , G11B9/1409 , G11B11/007 , G11B2005/0021
摘要： 반도체 탐침을 이용한 정보 재생방법 및 이를 적용하는 장치가 개시된다. 개시된 정차눈 정보기록매체에서 발생하는 전기장에 의해 채널이 변하는 반도체 팁을 가지는 반도체 탐침과; 상기 전기장에 의해 유기된 정보신호를 변조하도록 상기 반도체 탐침에 고주파 변조 신호를 가하여 변조 전계를 형성시키는 변조부와; 상기 반도체 탐침에서 발생하는 신호를 검출하는 신호 검출부; 그리고 상기 신호 검출부에서 검출된 신호에서 상기 변조 전계에 의해 변조된 정보신호를 추출하는 복조부;를 포함한다.
변조에 의해 전계변화에 의한 신호와 열적 변화에 신호를 분리하여 유효한 정보신호를 검출함으로써 신호 대 잡음 비가 향상되고 이로 인해 열적 잡음에 불구하고 정보신호를 안정적으로 재생할 수 있다.
FET, 저항, 변조, 복조, 열적 저항 변화, 전기장 저항 변화

9. 发明授权

KR100696849B1 정보 재생용 캔틸레버 및 그를 갖는 정보 저장 장치 失效
标题翻译：悬臂用于读取具有悬臂的数据和数据存储设备
公开(公告)号：KR100696849B1
公开(公告)日：2007-03-19
申请号：KR1020050112925
申请日：2005-11-24
申请人： 엘지전자 주식회사
发明人： 김영식
IPC分类号： G11B9/14
摘要： A cantilever for reproducing information and an information storage device having the cantilever are provided to sense 2-bit information with 1 electric charge amplifier, thus areas bonded with a head and the cantilever are reduced while the number of piezo sensors is decreased, consequently signal delivery lines are reduced to increase a degree of integration of the information storage device. A cantilever unit(100) is equipped with one pair of probes(110,111) which are separated from each other on both ends of a lower surface of the unit(100). A piezo sensor(150) is formed on an upper surface of the cantilever unit(100) as existing between one pair of vertical lines(P1,P2) vertically extended at positions where the one pair of the probes(110,111) individually exist. The piezo sensor(150) consists of a lower electrode(120) formed on the upper surface of the cantilever unit(100), a piezo film(130) formed on the lower electrode(120), and one pair of upper electrodes(131,132) formed in a direction of the one pair of the vertical lines(P1,P2) by being separated from each other on the piezo film(130).
摘要翻译：用于再现信息的悬臂和具有悬臂的信息存储装置被提供以用1个电荷放大器来感测2位信息，因此减小了与头部和悬臂结合的区域，同时压电传感器的数量减少，因此信号传递线路被减少以增加信息存储设备的集成度。悬臂单元（100）配备有在组件（100）的下表面的两端彼此分离的一对探针（110,111）。压电传感器（150）形成在悬臂单元（100）的上表面上，其存在于在一对探针（110,111）各自存在的位置处垂直延伸的一对垂直线（P1，P2）之间。压电传感器（150）由形成在悬臂单元（100）的上表面上的下电极（120），形成在下电极（120）上的压电薄膜（130）和一对上电极（131,132 ）通过在压电膜（130）上彼此分离而沿一对垂直线（P1，P2）的方向形成。

10. 发明授权

KR100673264B1 정보 저장 장치 및 그의 구동 방법 失效
标题翻译：数据存储装置及其驱动方法
公开(公告)号：KR100673264B1
公开(公告)日：2007-01-22
申请号：KR1020050079503
申请日：2005-08-29
申请人： 엘지전자 주식회사
发明人： 이선영 , 남효진
IPC分类号： G11B9/14
摘要： An information storage device and a driving method thereof are provided to independently drive a cantilever for storing information and a cantilever for erasing the information, thereby preventing a recording operation and an erasing operation from being overlapped together. A through hole(305) is formed on an inner side of the first cantilever(300) equipped with a probe(301) for storing information. Driving units(302) for driving the first cantilever(300) are individually disposed in one pair of areas(306a,306b) divided by the through hole(305). A through hole(315) is formed on an inner side of the second cantilever(310) equipped with a probe(311) for erasing the information. Driving units(313) for driving the second cantilever(310) are individually disposed in one pair of the first area and the second area(316b) divided by the through hole(315).
摘要翻译：提供信息存储装置及其驱动方法以独立地驱动用于存储信息的悬臂和用于擦除信息的悬臂，从而防止记录操作和擦除操作重叠在一起。在配备有用于存储信息的探针（301）的第一悬臂（300）的内侧形成通孔（305）。用于驱动第一悬臂（300）的驱动单元（302）分别设置在由通孔（305）分开的一对区域（306a，306b）中。在配备有用于擦除信息的探针（311）的第二悬臂（310）的内侧形成通孔（315）。用于驱动第二悬臂（310）的驱动单元（313）分别设置在由通孔（315）分隔的一对第一区域和第二区域（316b）中。

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