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    • 2. 发明公开
    • 전체 동작 범위에 걸쳐 높은 슬루율을 실현하기 위한 자기제어 회로를 갖는 연산 증폭기
    • 具有自动控制电路的操作放大器,用于通过不使用外部信号实现高全速率的全面运行范围
    • KR1020040030313A
    • 2004-04-09
    • KR1020030066769
    • 2003-09-26
    • 르네사스 일렉트로닉스 가부시키가이샤
    • 미우라마코토
    • H03F3/45
    • H03F3/303H03F2203/45454H03F2203/45466H03F2203/45471
    • PURPOSE: An operational amplifier with a self control circuit for realizing a high slew rate throughout a full operating range is provided to obtain the high slew rate without an external control circuit by increasing current values of differential input stages without using external signals. CONSTITUTION: An operational amplifier includes a pair of first differential transistors, a pair of second differential transistors, a first current source circuit, a second current source circuit, an output terminal, a first transistor, a second transistor, an output driver stage circuit, a first phase inverter circuit, and a second phase inverter circuit. The first differential transistors are disposed between a first power supply conductor and a second power supply conductor in order to receive differential input signals at a first differential input terminal(101) and a second differential input terminal(102). The second differential transistors are disposed between the first power supply conductor and the second power supply conductor in order to receive the differential input signals at a third differential input terminal and a fourth differential input terminal. The first current source circuit(103) is connected between the first differential transistor pair and the second power supply conductor. The second current source circuit(104) is connected between the second differential transistor pair and the first power supply conductor. The output terminal is used for outputting output signals. The first transistor is used for sourcing a drive output current via the output terminal. The second transistor is used for sinking a drive output current via the output terminal. The output driver stage circuit is used for controlling the drive output current corresponding to a signal output potential level of the output signal. The first phase inverter circuit(105) is used for controlling circuit current of the first differential transistors. The second phase inverter circuit(106) is used for controlling circuit current of the second differential transistors.
    • 目的:提供一种具有自动控制电路的运算放大器,用于在整个工作范围内实现高转换速率,通过增加差分输入级的电流值而不使用外部信号,无需外部控制电路即可获得高转换速率。 构成:运算放大器包括一对第一差分晶体管,一对第二差分晶体管,第一电流源电路,第二电流源电路,输出端子,第一晶体管,第二晶体管,输出驱动器级电路, 第一相逆变器电路和第二相位逆变器电路。 第一差分晶体管设置在第一电源导体和第二电源导体之间,以便在第一差分输入端(101)和第二差分输入端(102)处接收差分输入信号。 第二差分晶体管设置在第一电源导体和第二电源导体之间,以便在第三差分输入端和第四差分输入端接收差分输入信号。 第一电流源电路(103)连接在第一差分晶体管对和第二电源导体之间。 第二电流源电路(104)连接在第二差分晶体管对和第一电源导体之间。 输出端子用于输出输出信号。 第一个晶体管用于通过输出端子提供驱动输出电流。 第二个晶体管用于通过输出端子吸收驱动输出电流。 输出驱动器级电路用于控制对应于输出信号的信号输出电位电平的驱动输出电流。 第一相位逆变器电路(105)用于控制第一差分晶体管的电路电流。 第二相位逆变器电路(106)用于控制第二差分晶体管的电路电流。
    • 3. 发明公开
    • LOW-VOLTAGE HIGH-GAIN TRANSRESISTANCE AMPLIFIER
    • 低电压高增益放大器
    • KR20090036273A
    • 2009-04-14
    • KR20070101350
    • 2007-10-09
    • BANG JUN HOKIM BYOUNG WOOKCHO SEONG IK
    • BANG JUN HOKIM BYOUNG WOOKCHO SEONG IK
    • H03F3/04
    • H03F3/303H03F3/04
    • A transresistance amplifier is provided to obtain a wide application range by controlling a gain control range according to a variable control voltage. Sources of second, fourth, and sixth transistors are connected to the power in parallel. Drains of first, third, and fifth transistors are connected to the drains of the second, fourth, and sixth transistors in series. Sources of first, third, and fifth transistors are connected to a ground line. An input current is applied to the drain of the first and second transistors and the gate of the first, third, and fifth transistors. The gate of the fourth transistor is connected to the drain of the fifth and sixth transistors. The output voltage is outputted from the drain of the third and fourth transistors.
    • 提供了跨阻放大器,通过根据可变控制电压控制增益控制范围来获得广泛的应用范围。 第二,第四和第六晶体管的源极并联连接到电源。 第一,第三和第五晶体管的漏极串联连接到第二,第四和第六晶体管的漏极。 第一,第三和第五晶体管的源极连接到地线。 输入电流施加到第一和第二晶体管的漏极以及第一,第三和第五晶体管的栅极。 第四晶体管的栅极连接到第五和第六晶体管的漏极。 输出电压从第三和第四晶体管的漏极输出。
    • 5. 发明公开
    • 차동 증폭 장치, 반도체 장치, 전원 회로 및 이것을사용한 전자기기
    • 差分放大器,半导体器件,电源电路和使用其的电子器件
    • KR1020010095166A
    • 2001-11-03
    • KR1020010016899
    • 2001-03-30
    • 세이코 엡슨 가부시키가이샤
    • 추치야마사히코
    • H03F3/45
    • H03F3/45183H03F3/303H03F2200/153H03F2203/45454H03F2203/45674
    • PURPOSE: To speedily stabilize the output voltage of a differential amplifier. CONSTITUTION: A differential amplifier circuit 10 is provided with an N type transistor 16 and an N type transistor 18 and operated by an input voltage VIN1. A differential amplifier circuit 30 is provided with a P type transistor 36 and a P type transistor 38 and operated by an input voltage VIN2D. A P type transistor 50 to be operated by a signal S1 from the differential amplifier circuit 10 and an N type transistor 52 to be operated by a signal S2 from the differential amplifier 30 are provided and a voltage between these transistors 50 and 52 becomes the output voltage VOUT. Then, a voltage control circuit 60 equipped with an N type transistor 62 is provided for speedily changing the gate voltage of the P type transistor 50 on the basis of a signal S3 from the differential amplifier circuit 30. A voltage control circuit 70 equipped with a P type transistor 72 is provided for speedily changing the gate voltage of the N type transistor 52 corresponding to a signal S4 from the differential amplifier circuit 10.
    • 目的:快速稳定差分放大器的输出电压。 构成:差分放大器电路10具有N型晶体管16和N型晶体管18,并由输入电压VIN1操作。 差分放大器电路30设置有P型晶体管36和P型晶体管38,并由输入电压VIN2D操作。 AP型晶体管50由来自差分放大电路10的信号S1和由差分放大器30的信号S2操作的N型晶体管52提供,并且这些晶体管50和52之间的电压变为输出电压 VOUT。 然后,提供配备有N型晶体管62的电压控制电路60,用于根据来自差分放大器电路30的信号S3快速改变P型晶体管50的栅极电压。一个电压控制电路70, 提供P型晶体管72,用于从差分放大电路10快速改变对应于信号S4的N型晶体管52的栅极电压。
    • 9. 发明公开
    • 적응 바이어싱을 이용하는 고스윙 연산 증폭기 출력 스테이지
    • 使用自适应偏置的高电平运算放大器输出级
    • KR1020100046261A
    • 2010-05-06
    • KR1020107005944
    • 2008-08-21
    • 퀄컴 인코포레이티드
    • 다바크하이크서동원미시라마누
    • H03F1/52H03F3/30H03F3/45
    • H03F3/45192H03F1/52H03F1/523H03F3/303H03F2203/30015H03F2203/30084H03F2203/30117H03F2203/45244H03F2203/45626H03F2203/45732
    • An output stage (123) includes two transistors (T3, T4) (switching transistor, and biasing transistor) coupled in series in a pullup current path between a VDDA node and an output node, (120) and also includes two transistors (Tl, T2) (switching transistor and biasing transistor) coupled in series in a pulldown current path between the output node (121) and a ground node. Providing the biasing transistors (T2,T4) reduces the maximum voltage dropped across the transistors, thereby allowing the transistors to have lower breakdown voltages than VDDA. An adaptive biasing circuit adjusts the gate voltage on a biasing transistor (T2,T4) based on the output node (121) voltage. If the output voltage is in a midrange, then the gate voltage is set farther away from a rail voltage in order to reduce voltage stress. If the output voltage is in a range closer to the rail voltage, then the gate voltage is set closer to the rail voltage, thereby facilitating rail-to-rail output voltage swings.
    • 输出级(123)包括在VDDA节点和输出节点之间的上拉电流路径中串联耦合的两个晶体管(T3,T4)(开关晶体管和偏置晶体管)(120),并且还包括两个晶体管(T1, T2)(开关晶体管和偏置晶体管),其串联耦合在输出节点(121)和接地节点之间的下拉电流路径中。 提供偏置晶体管(T2,T4)降低了跨越晶体管的最大电压,从而允许晶体管具有比VDDA更低的击穿电压。 自适应偏置电路基于输出节点(121)电压来调节偏置晶体管(T2,T4)上的栅极电压。 如果输出电压处于中频范围,则栅极电压被设置得更远离轨道电压,以便减小电压应力。 如果输出电压在更接近导轨电压的范围内,则栅极电压被设置为更接近导轨电压,从而便于轨至轨输出电压摆动。