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1. 发明公开

KR1020140115568A 인쇄회로기판 내 주석 제거방법 无效
标题翻译：从PCB去除锡的方法
公开(公告)号：KR1020140115568A
公开(公告)日：2014-10-01
申请号：KR1020130030216
申请日：2013-03-21
申请人： 한국해양대학교 산학협력단
发明人： 유경근
IPC分类号： C22B25/06 , C22B7/00 , C22B3/04 , H05K3/00
CPC分类号： Y02P10/234 , C22B25/04 , C22B7/006 , C22B25/06 , C25C1/14 , Y02W30/822
摘要： The present invention relates to a method for removing tin contained in a printed circuit board. The method for removing tin contained in the printed circuit board is to selectively remove tin from the printed circuit board in which at least one dissimilar metal having an ionization tendency lower than tin such as copper is combined with tin and comprises a leaching step of selectively leaching tin from the printed circuit board by inputting the printed circuit board into a solvent containing a tetravalent tin ion acting as an oxidizing agent and a dissolution enhancing agent for enhancing the dissolution of the tin ion in the solvent and enabling the dissimilar metal (copper) to maintain an original solid condition, a separation step of separating the printed circuit board from the solvent in which tin is dissolved after the leaching step, and a collecting step of collecting tin from the solvent.
摘要翻译：本发明涉及一种去除印刷电路板中所含的锡的方法。用于除去印刷电路板中所含的锡的方法是从印刷电路板中选择性地除去锡，其中至少一种具有比锡的电离倾向低于铜的异种金属例如铜与锡组合，并且包括选择性浸出的浸出步骤通过将印刷电路板输入含有作为氧化剂的四价锡离子的溶剂和用于增强锡离子溶解在溶剂中的溶解增强剂，使印刷电路板中的异种金属（铜）保持原始固体状态，在浸出步骤之后将印刷电路板与其中锡溶解的溶剂分离的分离步骤以及从溶剂中收集锡的收集步骤。

2. 发明公开

KR1020120034127A ＩＴＯ 스크랩으로부터의 유가 금속의 회수 방법 无效
标题翻译：从ITO SCRAP收集有价值金属的方法
公开(公告)号：KR1020120034127A
公开(公告)日：2012-04-09
申请号：KR1020127005369
申请日：2007-06-27
申请人： 제이엑스금속주식회사
发明人： 신도유이치로 , 다케모토고우이치
IPC分类号： C25C1/14 , C25C1/22 , C25B1/00
CPC分类号： C25C1/00 , C22B3/045 , C22B7/006 , C22B25/06 , C22B58/00 , Y02P10/228 , Y02P10/234 , C25C1/14 , C25C1/22
摘要： ITO 스크랩을 pH 조정한 전해액 중에서 전해시킴으로써, 수산화인듐 및 수산화주석 또는 메타주석산의 혼합물을 회수하여, 필요에 따라 이것을 배소하여 산화인듐 및 산화주석의 혼합물로서 회수하는 것을 특징으로 하는 ITO 스크랩으로부터의 유가 금속의 회수 방법. 인듐-주석 산화물 (ITO) 스퍼터링 타겟 또는 제조시에 발생되는 ITO 단재 등의 ITO 스크랩으로부터, 수산화인듐 및 수산화주석 혹은 메타주석산, 또는 인듐 및 주석의 산화물을 효율적으로 회수하는 방법을 제공한다.

3. 发明公开

KR1020090055651A ＩＴＯ 스크랩으로부터의 유가 금속의 회수 방법 无效
标题翻译：从ITO SCRAP收集有价值金属的方法
公开(公告)号：KR1020090055651A
公开(公告)日：2009-06-02
申请号：KR1020097008218
申请日：2007-06-27
申请人： 제이엑스금속주식회사
发明人： 신도유이치로 , 다케모토고우이치
IPC分类号： C25C1/14 , C25C1/22 , C22B25/06 , C22B58/00
CPC分类号： C25C1/00 , C22B3/045 , C22B3/44 , C22B7/006 , C22B25/06 , C22B58/00 , C25C1/14 , C25C1/22 , Y02P10/228 , Y02P10/234 , Y02P10/212
摘要： Disclosed is a method for collecting a valuable metal from an indium-tin oxide (ITO) scrap, characterized by conducting the electrolysis of the ITO scrap in an pH-adjusted electrolyte solution to collect indium or tin in the form of an oxide. Also disclosed is a method for collecting a valuable metal from an ITO scrap, which comprises conducting the electrolysis of the ITO scrap in an electrolytic bath partitioned by a septum or an ion exchange membrane to precipitate tin hydroxide, removing an anolyte temporarily, causing the precipitation of indium contained in the anolyte in the form of a hydroxide, and collecting the hydroxide. In these methods, indium or tin may be collected in the form of an oxide by roasting the precipitate containing indium or tin. It becomes possible to provide a method for collecting indium at high efficiency from an ITO sputtering target or an ITO scrap (e.g., a ITO waste) produced during the production of the ITO sputtering target.
摘要翻译：公开了一种从铟锡氧化物（ITO）废料中收集有价金属的方法，其特征在于在pH调节的电解质溶液中进行ITO废料的电解以收集氧化物形式的铟或锡。还公开了一种从ITO废料中收集有价金属的方法，其包括在用隔膜或离子交换膜分隔的电解槽中对ITO废料进行电解以沉淀氢氧化锡，暂时除去阳极电解液，导致沉淀包含在阳极电解液中的以氢氧化物形式的铟，并收集氢氧化物。在这些方法中，可以通过焙烧含有铟或锡的沉淀物以氧化物的形式收集铟或锡。可以提供从ITO溅射靶或在ITO溅射靶的制造过程中产生的ITO废料（例如ITO废料）以高效率收集铟的方法。

4. 发明公开

KR1020080015942A 고순도 주석 또는 주석 합금 및 고순도 주석의 제조방법 有权
标题翻译：高纯度钛合金及其制造方法
公开(公告)号：KR1020080015942A
公开(公告)日：2008-02-20
申请号：KR1020087001110
申请日：2006-06-14
申请人： 닛코킨조쿠 가부시키가이샤
发明人： 신도유이치로 , 타케모토코우이찌
IPC分类号： C25C1/14 , C22C13/00 , C22B25/08
CPC分类号： C22B25/04 , C22B13/06 , C22B25/08 , C22C13/00 , C22F1/16 , C25C1/14 , C25F1/04 , H01L23/4827 , H01L2224/13111 , H01L2924/00011 , H01L2924/00014 , H01L2924/10253 , H01L2924/00 , H01L2224/0401
摘要： A high-purity tin or tin alloy characterized in that the respective contents of U and Th are simultaneously 5 ppb or less and the respective contents of Pb and Bi simultaneously 1 ppm or less, and that the purity thereof is 5 N or higher (provided that the gas components of O, C, N, H, S and P are excluded). Further, there is provided a high-purity tin or tin alloy characterized in that the alpha-ray count of high-purity tin with cast structure is 0.001 cph/cm^2 or less. Recent semiconductor devices, as density and capacity enhancements are promoted, increasingly encounter the danger of soft error generated by the influence of alpha-ray from a material lying in the neighborhood of semiconductor chips. Especially, the demand for purity increase of a solder material or tin used adjacent to semiconductor devices is strong, and a material of reduced alpha-ray is demanded. Accordingly, it is intended to obtain a high-purity tin or tin alloy having alpha-ray level of tin reduced in conformity with the above demands and obtain a process for producing such a high-purity tin.
摘要翻译：一种高纯度锡或锡合金，其特征在于U和Th的各自含量同时为5ppb以下，Pb和Bi的各自含量同时为1ppm以下，纯度为5N以上（提供 O，C，N，H，S和P的气体成分被排除）。此外，提供了一种高纯度锡或锡合金，其特征在于具有铸造结构的高纯度锡的α射线计数为0.001cph / cm 2以下。随着密度和容量的增强，近来的半导体器件越来越多地受到来自半导体芯片附近的材料的α射线的影响而产生的软误差的危险。特别地，与半导体器件相邻使用的焊料或锡的纯度增加的需求是强的，并且需要减少的α-射线的材料。因此，旨在获得具有符合上述要求的锡的α射线含量降低的高纯度锡或锡合金，并获得这种高纯度锡的制造方法。

5. 发明授权

KR101768051B1 주석 전해정련용 음극 압착장치 및 이를 이용한 주석 전해정련용 음극 압착방법 有权
公开(公告)号：KR101768051B1
公开(公告)日：2017-08-16
申请号：KR1020160153205
申请日：2016-11-17
申请人： 성일하이메탈(주)
发明人： 이강명 , 이기웅 , 변석현 , 안효진
IPC分类号： C25C7/00 , C25C7/02 , C25C1/14 , C25C7/06 , C25C7/08
CPC分类号： C25C7/00 , C25C1/14 , C25C7/02 , C25C7/06 , C25C7/08
摘要： 본발명은조주석을전해정련하여주석을회수하는주석전해정련장치에있어서, 복수개의전해셀; 상기전해셀내부에일정간격으로배치되는복수개의양극; 상기양극과교대로배치되고일측상부에행거가연결된복수개의음극; 상기전해셀의상부에배치되고, 복수개의전해셀상부를따라서이동가능하게구비되며, 상기전해셀의상부로인양된복수개의음극의양면을압착하여상기양극과음극이단락되는것을방지하는압착부; 및상기압착부의일측에구비되어상기행거를인양하여음극을수직으로이송하는견인부;를포함하는주석전해정련용음극압착장치및 이를이용한음극압착방법에관한것이다. 따라서본 발명에따르면, 조주석을전해정련하여주석으로회수하는주석전해정련장치에서전해공정에따른음극에서주석의성장을제어할수 있어서전해효율을크게증가시킬수 있다.

6. 发明公开

KR1020160123352A 혼합 전해질을 사용하는 개선된 금속 정련 방법 审中-实审
标题翻译：改进的金属精炼工艺使用混合电解质
公开(公告)号：KR1020160123352A
公开(公告)日：2016-10-25
申请号：KR1020167025318
申请日：2015-02-05
申请人： 허니웰 인터내셔날 인코포레이티드
发明人： 실린거폴피. , 클라크브렛엠. , 페리마크비.
IPC分类号： C25C1/14 , C25D3/30
CPC分类号： C25C1/14 , C25D3/30
摘要： 감소된단기간및 장기간알파입자방출및 감소된납 수준을갖는고순도주석을제조하기위한전해정련공정이개시된다. 이공정은적어도, 혼합전해질용액에서설페이트이온을제공하는제1 전해질, 예컨대황산, 및혼합전해질용액에서할라이드이온을제공하는제2 전해질, 예컨대염산을포함하는혼합산성전해질용액을사용할수 있다.

7. 发明公开

KR1020160110842A 주석계 양극 슬라임으로부터 주석의 회수방법 有权
标题翻译：基于SN的ANODE SLIM的SN的恢复方法
公开(公告)号：KR1020160110842A
公开(公告)日：2016-09-22
申请号：KR1020150035123
申请日：2015-03-13
申请人： 한국생산기술연구원
发明人： 김용환 , 한철웅 , 손성호 , 김영민
IPC分类号： C25C1/14 , C25C3/00 , C22B25/02
CPC分类号： C25C1/14 , C22B25/02 , C25C3/00
摘要： 본발명은주석계양극슬라임으로부터주석의회수방법에관한것으로, 더욱구체적으로주석의전해공정동안발생된주석계양극슬라임을여과하고세척및 건조시키는단계; 및상기건조된양극슬라임과탄소계물질을혼합한후 건식환원시키는단계;를포함하는주석계양극슬라임으로부터주석의회수방법에관한것이다.
摘要翻译：本发明涉及Sn从Sn系阳极泥中回收的Sn，更具体地说涉及Sn从Sn系阳极泥中回收的方法，该方法包括：对Sn 待清洗和干燥的Sn的电解过程; 以及将干燥的阳极粘土和待干燥的碳基材料混合的步骤。

8. 发明公开

KR1020130125590A 폐 리드프레임 스크랩으로부터의 주석 회수 방법 无效
标题翻译：用于从废物边框刮刀回收锡的方法
公开(公告)号：KR1020130125590A
公开(公告)日：2013-11-19
申请号：KR1020120049230
申请日：2012-05-09
申请人： 고등기술연구원연구조합
发明人： 김범석 , 강경훈
IPC分类号： C22B25/06 , C22B3/04 , C22B7/00
CPC分类号： Y02P10/234 , C25C1/14 , C22B25/04 , C22B25/06 , C25C7/02
摘要： A method for collecting tin from waste lead frame scrap is disclosed. The method according to the present invention comprises the steps of: leaching the tin by immersing the waste lead frame scrap in a leaching solution; separating the leaching solution, injecting it into an electrolytic bath, and installing an insoluble anode and a metal pole plate in the electrolytic bath; and collecting the tin on the surface of the metal pole plate as the power is supplied to the electrolytic bath. [Reference numerals] (AA) Waste lead frame scrap;(BB) Leaching in a leaching solution;(CC) Lead frame;(DD) Leaching solution;(EE) Distilled water;(FF) Washing;(GG) Install electrode;(HH) Drying;(II) Power supply;(JJ) Collect other metal (Cu etc.);(KK) Backwash and wash;(LL) Waste water;(MM) Dry and collect Sn
摘要翻译：公开了一种从废铅骨架废料收集锡的方法。根据本发明的方法包括以下步骤：通过将废物引线框架废料浸入浸出溶液中来浸出锡; 分离浸出溶液，将其注入电解槽，并将不溶性阳极和金属极板安装在电解槽中; 并且当电力供应到电解槽时，在金属极板的表面上收集锡。（AA）废铁屑废料;（BB）浸出溶液;（CC）引线框架;（DD）浸出液;（EE）蒸馏水;（FF）洗涤;（GG）安装电极; （HH）干燥;（II）电源;（JJ）收集其他金属（Cu等）;（KK）反洗和洗涤;（LL）废水;（MM）干燥和收集Sn

9. 发明授权

KR101291681B1 바렐 도금용 스틸볼의 스크랩으로부터 주석 및 니켈을 회수하는 방법 有权
标题翻译：钢丝网钢丝网和钢丝网的回收方法
公开(公告)号：KR101291681B1
公开(公告)日：2013-08-05
申请号：KR1020120037305
申请日：2012-04-10
申请人： 타운마이닝캄파니(주)
发明人： 김대원 , 장성태 , 최순령
IPC分类号： C25C1/14 , C25C1/08
CPC分类号： C25C1/14 , Y02P10/212
摘要： PURPOSE: A method for recovering tin and nickel from scraps of a steel ball for plating a barrel is provided to recover tin metal and a nickel compound of the high purity through simple steps without using excessive solvent. CONSTITUTION: A method for recovering tin and nickel from scraps of a steel ball for plating a barrel includes the following steps: grinding and classifying the scraps of the steel ball for plating the barrel after heat-treating the same at a temperature of 300-700°C; adding the tin compound and the nickel compound separated by the prior step into acid solution; filtering the acid solution in which the tin compound and the nickel compound are added; recovering tin by hydrogen reduction processing the residue for recovery at a temperature of 600-1000°C, and electrolytic refining the recovered tin.
摘要翻译：目的：提供一种用于从用于电镀圆桶的钢球的废料中回收锡和镍的方法，以通过简单的步骤回收锡金属和高纯度的镍化合物而不使用过量的溶剂。构成：从用于电镀圆桶的钢球的废料中回收锡和镍的方法包括以下步骤：在300-700℃的温度下对其进行热处理后，对钢球的废料进行研磨和分级 C; 将由前述步骤分离的锡化合物和镍化合物加入酸溶液中; 过滤加入锡化合物和镍化合物的酸溶液; 通过氢还原回收锡，残余物在600-1000℃的温度下回收，并对回收的锡进行电解精炼。

10. 发明公开

KR1020120082533A 낮은 용융 온도를 가지는 납 나노입자 및 그 제조방법 无效
标题翻译：具有低熔点的铅纳米管及其制造方法
公开(公告)号：KR1020120082533A
公开(公告)日：2012-07-24
申请号：KR1020110003834
申请日：2011-01-14
申请人： 김용상
发明人： 김용상
IPC分类号： C25C5/02
CPC分类号： C25C5/04 , B82Y40/00 , C25C1/14 , C25C7/02
摘要： PURPOSE: Solder nano particles with low melting temperature and a manufacturing method thereof are provided to save energy by decreasing heating temperature from 220°C to 150°C while a solder ball having nano particles is sintered at less than 150°C. CONSTITUTION: Solder nano particles comprise the particle size of 1~20nm. Surface melting temperature measured by a DSC(Differential Scanning Calorimetry) is within the range of 75~130°C. A solder electrode plate is used as an electrode, and the solder electrode plate electrolyzed in a sodium chloride aqueous solution.
摘要翻译：目的：提供具有低熔融温度的焊料纳米颗粒及其制造方法，通过将加热温度从220℃降至150℃，同时在小于150℃下烧结具有纳米颗粒的焊球，从而节约能源。构成：焊料纳米粒子的粒径为1〜20nm。通过DSC（差示扫描量热法）测量的表面熔融温度在75〜130℃的范围内。焊接电极板用作电极，焊接电极板在氯化钠水溶液中电解。

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