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    • 5. 发明公开
    • 반도체 기억장치, 및 그것을 탑재한 반도체 집적회로
    • 半导体存储器件和半导体集成电路并入其中
    • KR1020080012302A
    • 2008-02-11
    • KR1020077026995
    • 2006-05-18
    • 파나소닉 주식회사
    • 다카하시에이지사이토요시유키
    • G11C11/40
    • H01L27/101G11C11/404G11C11/4074G11C11/4076H01L27/1085H01L27/10882G11C11/4096G11C5/063G11C7/18G11C8/14
    • A semiconductor storage apparatus wherein the number of memory cells used as bypass capacitors can be dynamically changed. In each memory block, a selector signal line is provided in parallel with each word line. In a pair of word line and selector signal line adjacent to each other, the states thereof are maintained such that they are opposite to each other. Additionally, in each memory block, a branch of a power supply line is provided in parallel with each bit line. In each memory cell, a first transistor connects a capacitor to the bit line in accordance with the state of the word line, while a second transistor connects the same capacitor to the power supply line branch in accordance with the state of the selector signal line. In the memory cells aligned in the row direction, the gates of the first transistors are connected to the same word line, while the gates of the second transistors are connected to the same selector signal line.
    • 可以动态地改变用作旁路电容器的存储单元的数量的半导体存储装置。 在每个存储块中,选择器信号线与每个字线并行地提供。 在彼此相邻的一对字线和选择器信号线中,保持其状态使得它们彼此相对。 此外,在每个存储块中,与每个位线并联地提供电源线的分支。 在每个存储单元中,第一晶体管根据字线的状态将电容器连接到位线,而第二晶体管根据选择器信号线的状态将同一电容器连接到电源线分支。 在行方向排列的存储单元中,第一晶体管的栅极连接到相同的字线,而第二晶体管的栅极连接到相同的选择信号线。