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    • 1. 发明授权
    • 스위치
    • KR100636457B1
    • 2006-10-19
    • KR1020047007111
    • 2003-06-05
    • 파나소닉 주식회사
    • 나카니시요시토나카무라구니히코
    • H01H21/28
    • H01H59/0009H01H2001/0068H01H2059/0081
    • A switch capable of responding at a high rate at a lower DC potential and providing a high isolation is provided. In this switch, using microstructure group 103 having microstructure 102a, 102b and 102c, by slightly moving the microstructures 102a, 102b, and 102c a little, the group as a whole achieves a large amount of movement. Also, by this configuration, it is possible to decrease a DC potential to apply to the control electrodes 106a, 106b, 107a, 107b, 108a, 108b, 109a and 109b of the microstructures 102a, 102b and 102c. As a result, a high isolation switch 100 capable of operating at a high rate at a lower DC potential is realized.
    • 提供了一种能够在较低直流电位下高速响应并提供高隔离度的开关。 在该开关中,使用具有微结构102a,102b和102c的微结构组103,通过略微移动微结构102a,102b和102c,该组整体实现大量移动。 而且,通过该配置,可以降低施加到微结构102a,102b和102c的控制电极106a,106b,107a,107b,108a,108b,109a和109b的DC电位。 结果,实现了能够在较低直流电位下高速工作的高隔离度开关100。 <图像>