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    • 3. 发明公开
    • 반도체 기판 제조방법
    • 制造半导体基板的方法
    • KR1020130024474A
    • 2013-03-08
    • KR1020110087946
    • 2011-08-31
    • 코닝정밀소재 주식회사
    • 배준영김경준공선환어성우이원조이동욱박철민박현종최준성
    • H01L21/20
    • H01L21/02389H01L21/268H01L21/7806
    • PURPOSE: A method for manufacturing a semiconductor substrate is provided to prevent the warpage of a substrate by using a laser. CONSTITUTION: A substrate is prepared in a reactor(S311). The substrate has a convex surface. A semiconductor substrate is grown in the convex surface by using mixed gas(S312). Laser is irradiated on the semiconductor substrate to separate the substrate from a semiconductor substrate(S313). [Reference numerals] (AA) Start; (BB) End; (S311) Installing a substrate in a reactor; (S312) Growing a semiconductor substrate on a convex surface of the substrate; (S313) Separating the substrate and the semiconductor substrate by irradiating laser; (S314) Washing the surface of the separated semiconductor substrate
    • 目的:提供一种用于制造半导体衬底的方法,以通过使用激光来防止衬底的翘曲。 构成:在反应器中制备底物(S311)。 基板具有凸面。 通过使用混合气体在凸面生长半导体衬底(S312)。 激光照射在半导体衬底上以将衬底与半导体衬底分离(S313)。 (附图标记)(AA)开始; (BB)结束; (S311)将基板安装在反应器中; (S312)在衬底的凸表面上生长半导体衬底; (S313)通过照射激光来分离衬底和半导体衬底; (S314)洗涤分离的半导体衬底的表面