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    • 5. 发明公开
    • 포토레지스트 박리용 조성물, 이를 이용한 금속 패턴의 형성 방법 및 박막 트랜지스터 기판의 제조 방법
    • 用于剥离光电元件的组合物,使用其形成金属图案的方法和使用其制造显示器基板的方法
    • KR1020160033855A
    • 2016-03-29
    • KR1020140124412
    • 2014-09-18
    • 삼성디스플레이 주식회사주식회사 이엔에프테크놀로지
    • 박홍식정재우상현정김인배박영진이상대임찬규전경민
    • G03F7/42H01L21/306
    • G03F7/422H01L21/02068
    • 제조공정의신뢰성및 생산성을향상시킬수 있는포토레지스트박리용조성물, 이를이용한금속패턴의형성방법및 박막트랜지스터기판의제조방법이개시된다. 포토레지스트박리용조성물은알칸올아민 1 내지 10 중량%, 모노알킬렌글리콜알킬에테르화합물 1 내지 10 중량%, 디알킬렌글리콜알킬에테르화합물 10 내지 85 중량%, 하기화학식 2로표시되는폴리알킬렌옥사이드화합물 1 내지 5 중량%, 부식방지제 0.001 내지 0.01 중량%, 함질소비양자성극성용매 5 내지 20중량% 및여분의물을포함한다. 이에따라, 포토레지스트제거력을향상시킬수 있으며, 박리된포토레지스트가기판상에재부착되는것을방지할수 있다. 또한, 포토레지스트하부의금속에대한부식을방지할수 있다. 이에따라, 금속패턴및 박막트랜지스터기판의제조공정의신뢰성을향상시킬수 있다.
    • 公开了用于分离光致抗蚀剂的组合物,其可以提高制造工艺的可靠性和生产率,用于形成金属图案的方法以及通过使用该方法制造薄膜晶体管基板的方法。 用于分离光致抗蚀剂的组合物包括1-10重量%的链烷醇胺,1-10重量%的单亚烷基二醇烷基醚化合物,10-85重量%的二亚烷基二醇烷基醚化合物和1-5重量%的聚环氧烷 化学式2表示的化合物,0.001-0.01重量%的防腐蚀剂,5-20重量%的含氮非质子极性溶剂和余下的水。 因此,可以增加用于除去光致抗蚀剂的力,并且可以防止分离的光致抗蚀剂再次附着到基板上。 此外,可以防止光致抗蚀剂下部的金属腐蚀。 因此,可以提高用于制造金属图案和薄膜晶体管基板的工艺的可靠性。
    • 7. 发明公开
    • 후막의 네가티브 포토레지스트용 박리액 조성물
    • 剥离组合物用于厚负离子光刻胶
    • KR1020140028962A
    • 2014-03-10
    • KR1020120096430
    • 2012-08-31
    • 주식회사 이엔에프테크놀로지
    • 강영한박영진이상대류현규
    • G03F7/34G03F7/039
    • G03F7/0382C11D11/0047G03F7/42G03F7/422G03F7/423G03F7/425G03F7/426
    • The present invention relates to a stripper composition for photoresist removal. The composite according to the present invention comprises 1-5 wt% of a compound represented by chemical formula (1), 70-95 wt% of a polar organic solvent, 0.1-5 wt% of a hydroxide-based compound and a rest amount of water. The stripper composition according to the present invention is able to effectively complete a stripping process within a short time by including the proper amount of the compound represented by chemical formula (1) without an anticorrosive agent and is able to minimize composition variation in a stripping process performed at relatively high process temperatures as compared to a different process. The stripper composition is able to prevent post-processing defect such as evaporation defect due to the adsorption of non-aqueous anticorrosive agents by excluding anticorrosive agents while preventing electrode damage.
    • 本发明涉及一种用于光致抗蚀剂去除的剥离剂组合物。 根据本发明的复合材料包含1-5重量%的由化学式(1)表示的化合物,70-95重量%的极性有机溶剂,0.1-5重量%的氢氧化物基化合物和其余量 的水。 根据本发明的汽提组合物能够在短时间内有效地完成汽提过程,包括适当量的化学式(1)表示的化合物而不使用防锈剂,并能够最小化汽提过程中的组成变化 与不同的工艺相比,在相对高的工艺温度下进行。 脱模剂组合物能够防止由于通过排除防锈剂而吸附非水性防锈剂而引起的蒸发缺陷等后处理缺陷,同时防止电极损坏。
    • 9. 发明公开
    • 포토레지스트 박리액 조성물
    • 光电剥离组合物
    • KR1020110124955A
    • 2011-11-18
    • KR1020100044444
    • 2010-05-12
    • 주식회사 이엔에프테크놀로지
    • 박영진한두석이상대신효섭
    • G03F7/42
    • G03F7/425G03F7/426
    • PURPOSE: A photo-resist stripping composition is provided to prevent the occurrence of corrosion with respect to metal wirings under a photo-resist film in a stripping process and a deionized water-based rinsing process. CONSTITUTION: A photo-resist stripping composition includes 0.5 to 5 weight% of alkylammonium hydroxide, 60-90 weight% of an aprotic polar solvent, 0.1-3 weight% of aromatic polyalcohol, 0.1-5 weight% of linear polyalcohol, and 5-30 weight% of water. The aromatic alcohol includes one or more carboxylic groups or alkylester groups and includes three or more hydroxylic groups. The aromatic polyalcohol is selected from a group including gallic acid, methyl gallate, ethyl gallate, propyl gallate, butyl gallate, and the mixture of the same. The linear polyalcohol includes three or more hydroxyl groups. The alkylammonium hydroxide is selected from a group including tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and the mixture of the same.
    • 目的:提供光阻剥离组合物,以防止在剥离过程和去离子水基漂洗工艺中在光致抗蚀剂膜下相对于金属布线发生腐蚀。 构成:光阻剥离组合物包含0.5-5重量%的烷基氢氧化铵,60-90重量%的非质子极性溶剂,0.1-3重量%的芳族多元醇,0.1-5重量%的线性多元醇和5- 30重量%的水。 芳族醇包括一个或多个羧基或烷基酯基,并且包括三个或更多个羟基。 芳族多元醇选自不含有没食子酸,没食子酸甲酯,没食子酸乙酯,没食子酸丙酯,没食子酸丁酯及其混合物的组。 线性多元醇包括三个或更多个羟基。 烷基氢氧化铵选自氢氧化四甲基铵,氢氧化四乙铵,氢氧化四丙基铵及其混合物。