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    • 1. 发明公开
    • 포토레지스트 조성물
    • 光电组合物
    • KR1020120054242A
    • 2012-05-30
    • KR1020100115517
    • 2010-11-19
    • 주식회사 동진쎄미켐
    • 김승기변자훈김병욱김동민이원영제갈은박주경주상일함선미이두연박일규정기화김경호홍우성
    • G03F7/022G03F7/004H01L21/027
    • G03F7/022G03F7/004G03F7/0045H01L21/027H01L21/0271
    • PURPOSE: A photoresist composition and a method for forming patterns using the same are provided to prevent the generation of coating stains and to improve the uniformity of coating. CONSTITUTION: A photoresist composition includes 5-30 weight% of novolak resin, 2-10 weight% of diazide-based photo-sensitive compound, 1-70 weight% of co-solvent represented by chemical formula 1, and remaining amount of an organic solvent. In chemical formula 1, R1 is a hydrogen element or an alkyl group with 1 to 10 linear or branched carbon elements; R2 is an alkyl group or allyl group with 1 to 10 linear or branched carbon elements. The co-solvent represented by chemical formula 1 is one selected from a group including dimethyl-2-methylketoglutarate, dimethyl adipate, dimethyl glutarate, dimethyl succinate, diisobutyl adipate, diisobutyl glutarate, and diisobutyl succinate.
    • 目的:提供光致抗蚀剂组合物和使用其形成图案的方法,以防止涂层污渍的产生并提高涂层的均匀性。 构成:光致抗蚀剂组合物包括5-30重量%的酚醛清漆树脂,2-10重量%的二叠氮基光敏化合物,1-70重量%的由化学式1表示的助溶剂和剩余量的有机 溶剂。 在化学式1中,R 1是氢元素或具有1至10个直链或支链碳元素的烷基; R2是具有1至10个直链或支链碳元素的烷基或烯丙基。 由化学式1表示的共溶剂是选自包括二甲基-2-甲基酮戊二酸酯,己二酸二甲酯,戊二酸二甲酯,琥珀酸二甲酯,己二酸二异丁酯,戊二酸二异丁酯和琥珀酸二异丁酯的基团。
    • 2. 发明公开
    • 포토레지스트 조성물
    • 光电组合物
    • KR1020120054241A
    • 2012-05-30
    • KR1020100115516
    • 2010-11-19
    • 주식회사 동진쎄미켐
    • 김승기변자훈김병욱김동민이원영제갈은박주경주상일함선미이두연박일규정기화김경호홍우성
    • G03F7/022G03F7/40
    • G03F7/0236C08G8/08G03F7/0048G03F7/0752G03F7/168G03F7/425
    • PURPOSE: A photoresist composition and a method for forming patterns using the same are provided to improve resolution and to reduce the width of wiring by minimizing the etching bias of an active layer at industrial field. CONSTITUTION: A photoresist composition includes 5-30 weight% of novolak resin, 2-10 weight% of diazide-based photo-sensitive compounds, 0.1-6 weight% of mercapto compounds, and remaining amount of organic solvent. The mercapto compounds are represented by chemical formula 1 or 2. In chemical formula 1 or 2, R1 is an alkyl group or allyl group with 1 to 20 linear or branched carbon elements. The mercapto compound represented by chemical formula 1 is 2-mercaptoethanol. The mercapto compound represented by chemical formula 2 is 3-mercaptopropionate. The novolak resin is the mixture of two or more compounds.
    • 目的:提供光致抗蚀剂组合物和使用其形成图案的方法,以通过最小化工业领域的活性层的蚀刻偏压来提高分辨率和减小布线的宽度。 构成:光致抗蚀剂组合物包括5-30重量%的酚醛清漆树脂,2-10重量%的二叠氮基光敏化合物,0.1-6重量%的巯基化合物和剩余量的有机溶剂。 巯基化合物由化学式1或2表示。在化学式1或2中,R 1是具有1至20个直链或支链碳元素的烷基或烯丙基。 由化学式1表示的巯基化合物是2-巯基乙醇。 由化学式2表示的巯基化合物是3-巯基丙酸酯。 酚醛清漆树脂是两种或更多种化合物的混合物。
    • 3. 发明公开
    • 포토레지스트 조성물
    • 光电组合物
    • KR1020120138578A
    • 2012-12-26
    • KR1020110058155
    • 2011-06-15
    • 주식회사 동진쎄미켐
    • 제갈은김동민이원영김승기변자훈김병욱박주경주상일함선미이두연박일규정기화김경호홍우성
    • G03F7/022H01L21/027
    • G03F7/0223G03F7/0226H01L21/0273H01L21/0274
    • PURPOSE: A photoresist composition is provided to improve the dissolution of a polymer resin, and the resolution, the development contrast, and the photosensitivity of a photoresist film by using a glutaraldehyde-based novolak resin. CONSTITUTION: A photoresist composition includes 5-30 weight% of a novolak resin, 2-10 weight% of a diazide-based photosensitive compound, 0.1-10 weight% of a sensitivity enhancer, and remaining amount of an organic solvent. The novolak resin is the condensation polymer of a phenol compound and glutaraldehyde, and the weight average molecular weight of the novolak resin is in a range between 2,000 and 20,000. In the novolak resin, 2-50 parts by weight of the glutaraldehyde are used based on 100 parts by weight of the phenol compound. [Reference numerals] (AA) Embodiment 1; (BB) Embodiment 2; (CC) Embodiment 3; (DD) Comparative Embodiment 1; (EE) H/B = Skip; (FF) H/B = 130°C; (GG) H/B = 135°C
    • 目的:提供光致抗蚀剂组合物以通过使用戊二醛基酚醛清漆树脂来改善聚合物树脂的溶解性,以及光刻胶膜的分辨率,显影对比度和光敏性。 构成:光致抗蚀剂组合物包括5-30重量%的酚醛清漆树脂,2-10重量%的二叠氮基感光性化合物,0.1-10重量%的灵敏度增强剂和剩余量的有机溶剂。 酚醛清漆树脂是酚化合物和戊二醛的缩聚物,酚醛清漆树脂的重均分子量在2,000和20,000之间的范围内。 在酚醛清漆树脂中,基于100重量份的酚化合物,使用2-50重量份的戊二醛。 (附图标记)(AA)实施例1; (BB)实施例2; (CC)实施例3; (DD)比较实施例1; (EE)H / B =跳过; (FF)H / B = 130℃; (GG)H / B = 135℃
    • 8. 发明公开
    • 고해상도 고잔막률 포토레지스트 조성물
    • 具有高分辨率和高残留率的光电组合物
    • KR1020130076550A
    • 2013-07-08
    • KR1020110145178
    • 2011-12-28
    • 주식회사 동진쎄미켐
    • 김승기홍우성김봉진김병욱김동민이원영제갈은변자훈주상일함선미이두연박일규김경호유미란박주경
    • G03F7/022G03F7/004
    • G03F7/022G03F7/004G03F7/0045G03F7/20G03F7/202
    • PURPOSE: A photoresist composition is provided to indicate the high residual film rate and high definition, to use in industrial sites, and to enhance productivity because of reduced time in mass production. CONSTITUTION: A photoresist composition comprises novolak [novolak] resin of 5-30 weight%, the first diazide [diazide] group photo sensitive compound including the compound represented by the chemical formula 1 of 2-10 weight% and residual organic solvent. In the chemical formula 1., the R1, the R2 and R3 are respectively 2- diazo -1- naphthol -5- sulfonyl [2-diazo-1-naphthol-5-sulfonyl], and hydrogen or a C1-5 alkyl group, one of R1, R2 and R3 is 2- diazo -1- naphthol -5- sulfonyl at least. The N is the fixed number of 1-4. The novolak resin comprises 'novolak resin with the weight ratio of the paracresol [p-cresol] and metacresol [m-cresol] of 2:8-8:2'. [Reference numerals] (AA) Pattern size; (BB) Implementation example 1; (CC) Implementation example 2; (DD) Comparison example 1; (EE) Limiting resolution
    • 目的:提供光致抗蚀剂组合物,以表示在工业现场使用的高残留膜率和高清晰度,并且由于缩短了大量生产的时间而提高了生产率。 构成:光致抗蚀剂组合物包含5-30重量%的酚醛清漆[酚醛清漆]树脂,包含化学式1表示的化合物2-10重量%的第一重氮化物[二叠氮基]光敏化合物和残留的有机溶剂。 在化学式1中,R1,R2和R3分别为2-重氮-1-萘酚-5-磺酰基[2-重氮-1-萘酚-5-磺酰基],和氢或C 1-5烷基 至少R 1,R 2和R 3中的一个是2-重氮-1-萘酚-5-磺酰基。 N是1-4的固定数。 酚醛清漆树脂包括具有对甲酚[对甲酚]和间甲酚[间甲酚]的重量比为2:8-8:2'的酚醛清漆树脂。 (附图标记)(AA)图案尺寸; (BB)实施例1; (CC)实施示例2; (DD)比较例1; (EE)限制分辨率