专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

KR100643628B1 다결정 실리콘 연마용 ＣＭＰ 슬러리 조성물 및 이의 제조방법 有权
标题翻译： 다결정실리콘연마용CMP슬러리조성물및이의제조방
公开(公告)号：KR100643628B1
公开(公告)日：2006-11-10
申请号：KR1020050105280
申请日：2005-11-04
申请人： 제일모직주식회사 , 삼성전자주식회사
发明人： 정재훈 , 이인경 , 최원영 , 이태영 , 양지철
IPC分类号： C09K3/14
摘要： Provided are a CMP slurry composition for polishing polycrystalline silicon which is improved in polishing uniformity and selectivity by reducing the surface defect of a wafer, and its preparation method. The CMP slurry composition comprises a metal oxide; a quaternary ammonium base compound; and 0.001-1 wt% of a fluorine-based surfactant represented by CF3(CF2)nSO2X, wherein n is 1-20; X is COOR, RO, (OCH2CH2)n' or (OCH2CH(OH)CH2)n'; R is a C1-C20 alkyl group; and n' is 1-100. Preferably the metal oxide is at least one selected from the group consisting of SiO2, Al2O3, CeO2, ZrO2 and TiO2 and has a primary particle size of 10-200 nm and a specific surface area of 10-300 m^2/g; and the quaternary ammonium base compound is at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide.
摘要翻译：本发明提供一种用于抛光多晶硅的CMP浆料组合物，其通过减少晶片的表面缺陷而提高抛光均匀性和选择性，及其制备方法。 CMP浆料组合物包含金属氧化物; 季铵碱化合物; 和0.001-1重量％的由CF 3（CF 2）n SO 2 X表示的氟基表面活性剂，其中n为1-20; X是COOR，RO，（OCH 2 CH 2）n'或（OCH 2 CH（OH）CH 2）n'; R是C1-C20烷基; 和n'是1-100。优选金属氧化物为选自SiO 2，Al 2 O 3，CeO 2，ZrO 2和TiO 2中的至少一种，其一次粒径为10-200nm，比表面积为10-300平方公尺/ g; 并且季铵碱化合物是选自氢氧化四甲基铵，氢氧化四乙基铵，氢氧化四丙基铵和氢氧化四丁基铵中的至少一种。

2. 发明授权

KR101279962B1 금속 배선 연마용 ＣＭＰ 슬러리 조성물 有权
标题翻译：用于抛光金属布线的化学机械抛光浆料组合物
公开(公告)号：KR101279962B1
公开(公告)日：2013-07-05
申请号：KR1020080129219
申请日：2008-12-18
申请人： 제일모직주식회사
发明人： 강동헌 , 이인경 , 임건자 , 김태완 , 최원영 , 이태영
IPC分类号： C09K3/14
摘要： 본 발명은 금속 배선 연마용 CMP 슬러리 조성물에 관한 것으로, 보다 상세하게는 초순수, 연마제, 산화제, 및 부식 억제제를 포함하는 CMP 슬러리 조성물에 있어서, 상기 부식 억제제로 인산 또는 인산염을 사용하는 것을 특징으로 하는 금속 배선 연마용 CMP 슬러리 조성물에 관한 것이다.
본 발명의 CMP 슬러리 조성물은 금속 배선 연마 시의 연마 속도를 어느 정도 유지하면서 금속 배선에 대한 에칭 속도를 감소시킬 수 있으므로, 연마 속도 및 연마 후 금속 표면 특성이 우수한 금속 배선 연마 공정에 유용하다.
금속 배선, CMP 슬러리, 부식 억제제, 인산 또는 인산염, 연마, 에칭, 표면 특성

3. 发明授权

KR101178719B1 구리 배선 연마용 ＣＭＰ 슬러리 조성물 및 이를 이용한 연마 방법 有权
标题翻译：用于抛光铜布线的CMP浆料组合物及其使用的抛光方法
公开(公告)号：KR101178719B1
公开(公告)日：2012-08-31
申请号：KR1020080135781
申请日：2008-12-29
申请人： 제일모직주식회사
发明人： 노종일 , 츄호머 , 김원래 , 이태영 , 이인경
IPC分类号： C09K3/14
摘要： 본 발명은 구리 배선 연마용 CMP 슬러리 조성물에 관한 것으로, 보다 상세하게는 초순수, 연마제, 산화제, 부식 억제제, 및 유기산을 포함하는 CMP 슬러리 조성물에 있어서, 상기 부식 억제제로 무기계 부식 억제제를 사용하는 것을 특징으로 하는 구리 배선 연마용 CMP 슬러리 조성물에 관한 것이다.
본 발명의 CMP 슬러리 조성물은 에칭 속도가 낮고, 구리에 대한 부식이 발생하지 않으며, 피연마물에 유기 잔류물이 발생하지 않으므로, 구리 배선 연마 공정에 유용하다.
구리, 연마, CMP, 슬러리, 무기계 부식 억제제, 에칭 속도, 부식, 유기 잔류물

4. 发明公开

KR1020100080329A 구리 배리어층 연마용 ＣＭＰ 슬러리 조성물, 이를 이용한 연마 방법, 및 그 연마방법에 의해 제조된 반도체 소자 有权
标题翻译：用于抛光铜膜层的CMP浆料组合物，使用该组合物的抛光方法和通过该方法分解的半导体器件
公开(公告)号：KR1020100080329A
公开(公告)日：2010-07-08
申请号：KR1020090086869
申请日：2009-09-15
申请人： 제일모직주식회사
发明人： 이태영 , 이인경 , 최병호 , 박용순
IPC分类号： C09K3/14
摘要： PURPOSE: A CMP slurry composition for polishing copper barrier is provided to minimize surface defect after final polishing and to ensure high polishing speed. CONSTITUTION: A CMP slurry composition for polishing copper barrier layer contains polishing agent, copper surface protecting agent, copper surface corrosion inhibitor, oxidizer, and pH adjusting agent. The polishing agent is non-spherical colloid silica and the ratio of polishing speed is 0.80-1.20. The non-spherical colloid silica has less than 0.6 of primary particle diameter with respect to secondary particle size.
摘要翻译：目的：提供用于抛光铜屏障的CMP浆料组合物，以最终抛光后的表面缺陷最小化，并确保高抛光速度。构成：用于抛光铜阻挡层的CMP浆料组合物含有抛光剂，铜表面保护剂，铜表面腐蚀抑制剂，氧化剂和pH调节剂。抛光剂为非球形胶体二氧化硅，抛光速度比为0.80-1.20。相对于二次粒径，非球形胶体二氧化硅的初级粒径小于0.6。

5. 发明公开

KR1020100072813A 구리 배선 연마용 ＣＭＰ 슬러리 조성물 및 이를 이용한 연마 방법 有权
标题翻译：用于抛光铜线的CMP浆料组合物和使用其的抛光方法
公开(公告)号：KR1020100072813A
公开(公告)日：2010-07-01
申请号：KR1020080131333
申请日：2008-12-22
申请人： 제일모직주식회사
发明人： 김원래 , 노종일 , 이태영 , 츄호머 , 이인경
IPC分类号： C09K3/14
摘要： PURPOSE: A CMP slurry composition and a polishing method using thereof are provided to improve the polishing speed of the composition for a copper wiring and to reduce a dishing phenomenon on the surface of an object by using a slow etching speed. CONSTITUTION: A CMP slurry composition for a copper wiring contains ultrapure water, an abrasive, an oxidizer, a corrosion inhibitor, and organic acid. The organic acid contains a thiophene group as a corrosion-inhibitory functional group and a carboxyl group as a chelating functional group. The organic acid is selected from the group consisting of thiophene carboxylic acid, thiophene dicarboxylic acid, thiophene tetracarboxylic acid, and their salt forms.
摘要翻译：目的：提供CMP浆料组合物和使用其的抛光方法，以提高铜布线用组合物的抛光速度，并通过缓慢蚀刻速度减少物体表面上的凹陷现象。构成：用于铜布线的CMP浆料组合物包含超纯水，研磨剂，氧化剂，缓蚀剂和有机酸。有机酸含有作为腐蚀抑制性官能团的噻吩基和作为螯合官能团的羧基。有机酸选自噻吩羧酸，噻吩二羧酸，噻吩四羧酸及其盐形式。

6. 发明公开

KR1020090002506A 상변화 메모리 소자 연마용 ＣＭＰ 슬러리 조성물 및 이를이용한 연마 방법 无效
标题翻译：相变记忆材料的CMP浆料组合物和使用该相变材料的抛光方法
公开(公告)号：KR1020090002506A
公开(公告)日：2009-01-09
申请号：KR1020070065877
申请日：2007-06-29
申请人： 제일모직주식회사
发明人： 이태영 , 이인경 , 최병호 , 박용순
IPC分类号： C09K3/14 , H01L21/304
CPC分类号： C09G1/04 , H01L45/06 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A CMP slurry composition for polishing a phase change memory device is provided to improve the polishing speed of a phase change memory device and the polishing selectivity of a phase change memory device and a polishing stop film, and to ensure the polished surface of high quality having low etching rate of a phase change material. A CMP slurry composition for polishing a phase change memory device comprises hyperpure water, iron or an iron compound and pH adjusting agent. The phase change memory device comprises the metal alloy or chalcogenide. The iron or the iron compound is a compound containing iron within ferrous metal or molecule.
摘要翻译：提供了一种用于抛光相变存储器件的CMP浆料组合物，以改善相变存储器件的抛光速度和相变存储器件和抛光停止膜的抛光选择性，并且确保具有高质量的抛光表面相变材料的低蚀刻速率。用于抛光相变记忆装置的CMP浆料组合物包括超纯水，铁或铁化合物和pH调节剂。相变存储器件包括金属合金或硫族化物。铁或铁化合物是含铁金属或分子中含铁的化合物。

7. 发明公开

KR1020090002503A 상변화 메모리 소자 연마용 ＣＭＰ 슬러리 조성물 및 이를이용한 연마 방법 有权
标题翻译：相变记忆材料的CMP浆料组合物和使用该相变材料的抛光方法
公开(公告)号：KR1020090002503A
公开(公告)日：2009-01-09
申请号：KR1020070065874
申请日：2007-06-29
申请人： 제일모직주식회사
发明人： 이태영 , 이인경 , 최병호 , 박용순
IPC分类号： C09K3/14
摘要： A CMP slurry composition for polishing a phase change memory device is provided to improve the polishing speed of a phase change memory device and to realize high polishing selectivity of a polishing stop film and a phase change memory device while minimizing the defection of processing. A CMP slurry composition for polishing a phase change memory device comprises hyperpure water, nitrogen compounds and oxidizer. The phase change memory device comprises metal alloy or chalcogenide. The nitrogen compounds comprise at least one selected from the group consisting of aliphatic amine, aromatic amine, ammonium salt and ammonium base.
摘要翻译：提供了用于抛光相变存储器件的CMP浆料组合物，以提高相变存储器件的抛光速度，并且在最小化加工缺陷的同时实现抛光停止膜和相变存储器件的高抛光选择性。用于抛光相变记忆装置的CMP浆料组合物包括超纯水，氮化合物和氧化剂。相变存储器件包括金属合金或硫族化物。氮化合物包括选自脂族胺，芳族胺，铵盐和铵碱中的至少一种。

8. 发明公开

KR1020070075075A 다결정 실리콘 연마용 ＣＭＰ 슬러리 조성물 有权
标题翻译：用于抛光聚硅氧烷膜的化学机械抛光浆料组合物
公开(公告)号：KR1020070075075A
公开(公告)日：2007-07-18
申请号：KR1020060003406
申请日：2006-01-12
申请人： 제일모직주식회사
发明人： 최원영 , 이인경 , 정재훈 , 이태영
IPC分类号： C09K3/14
摘要： A chemical mechanical polishing slurry composition for polishing poly-silicon films is provided to solve a dishing problem and have excellent polishing uniformity and high selectivity. The chemical mechanical polishing slurry composition for polishing poly-silicon films comprises (a) a metal oxide, (b) a quaternary ammonium base compound, and (c) an ionic polymer. The ionic polymer is contained in an amount of 0.001-1wt% based on the total slurry composition. The ionic polymer is at least one selected from polyacrylic acid, poly(acrylic acidco-maleic acid), and poly(acylamide-co-acrylic acid).
摘要翻译：提供了用于抛光多晶硅膜的化学机械抛光浆料组合物，以解决凹陷问题，并具有优异的抛光均匀性和高选择性。用于抛光多晶硅膜的化学机械抛光浆料组合物包括（a）金属氧化物，（b）季铵碱化合物和（c）离子聚合物。基于总淤浆组成，离子聚合物的含量为0.001-1重量％。离子聚合物是选自聚丙烯酸，聚（丙烯酸 - 马来酸）和聚（酰基酰胺 - 共 - 丙烯酸）中的至少一种。

9. 发明公开

KR1020070067270A 실리콘 웨이퍼 연마용 슬러리 조성물 및 이를 이용한연마방법 有权
标题翻译：用于抛光硅胶的浆料组合物及其使用方法
公开(公告)号：KR1020070067270A
公开(公告)日：2007-06-28
申请号：KR1020050128376
申请日：2005-12-23
申请人： 제일모직주식회사
发明人： 박태원 , 노현수 , 이태영 , 이인경
IPC分类号： C09K3/14
摘要： A slurry composition for polishing a silicon wafer is provided to exhibit excellent characteristics even in 65nm or below high-performance semiconductor designs and reduce LPD and haze on a wafer surface largely. The slurry composition for polishing a silicon wafer comprises (a) at least any one of non-ionic surfactants represented by formulae 1, 2, and 3, (b) a silica, (c) a pH modifier, (d) an organic base, (e) a thickener, and (f) an ultrapure water. The formula 1 is R(R')_m(R"O)_nH, the formula 2 is R(R'O)_m(R"O)_nR and the formula 3 is RN(R'O)_m(R"O)nH. In the formula 1, R is a C5-20 alkyl, and R' and R" are ethylene or propylene and have an average molecular weight of 10,000-5,000,000. In the formula 2, R is a C5-20 alkyl, and R' and R" are ethylene or propylene and have an average molecular weight of 10,000-5,000,000. In the formula 3, R is a C5-20 alkyl, and R' and R" are ethylene or propylene and have an average molecular weight of 10,000-5,000,000.
摘要翻译：提供了用于抛光硅晶片的浆料组合物，即使在65nm或更低的高性能半导体设计中也表现出优异的特性，并且在晶片表面上大大降低了LPD和雾度。用于研磨硅晶片的浆料组合物包含（a）由式1,2和3表示的非离子表面活性剂中的至少一种，（b）二氧化硅，（c）pH调节剂，（d）有机碱，（e）增稠剂，和（f）超纯水。式1是R（R'）m（R“O）_nH，式2是R（R'O）_m（R”O）_nR，式3是RN（R'O）_m（R“O ）nH在式1中，R为C5-20烷基，R'和R“为乙烯或丙烯，平均分子量为10,000-5,000,000。在式2中，R为C 5-20烷基，R'和R“为乙烯或丙烯，平均分子量为10,000-5,000,000，在式3中，R为C5-20烷基，R' 和R“是乙烯或丙烯，平均分子量为10,000-5,000,000。

10. 发明授权

KR100643632B1 실리콘 웨이퍼 연마용 슬러리 조성물 및 이를 이용한연마방법 有权
标题翻译：室内设计师俱乐部
公开(公告)号：KR100643632B1
公开(公告)日：2006-11-10
申请号：KR1020050128377
申请日：2005-12-23
申请人： 제일모직주식회사
发明人： 이태영 , 노현수 , 박태원 , 이인경
IPC分类号： C09K3/14
摘要： Provided are a slurry composition for polishing a silicon wafer which is high in polishing power, can remove or reduce the content of residual metal components on the surface of a wafer and improves the reliance of package, and a method for polishing a silicon wafer by using the composition. The slurry composition comprises 0.2-40 wt% of colloidal silica; 0.05-7 wt% of an amine; 0.01-2 wt% of a quaternary ammonium base; 0.001-1 wt% of a metal chelating agent; 0.01-2 wt% of a pH controller; 0.01-2 wt% of a hydroxide ion buffer agent; and the balance of deionized water. Preferably the colloidal silica is spherical and has an average diameter of 50-150 nm; and the metal chelating agent is at least one selected from the group consisting of EDTA, PDTA, CyDTA, NTA, DTPA and HEDTA-based chelating agents.
摘要翻译：本发明提供一种抛光功率高，能够除去或减少晶片表面的残留金属成分的含量，提高封装的可靠性的硅晶片研磨用组合物以及使用该硅晶片的研磨方法组成。该浆料组合物包含0.2-40重量％的胶体二氧化硅; 0.05-7重量％的胺; 0.01-2重量％的季铵碱; 0.001-1重量％的金属螯合剂; 0.01-2重量％的pH控制剂; 0.01-2重量％的氢氧根离子缓冲剂; 和去离子水的平衡。优选胶态二氧化硅是球形的并具有50-150nm的平均直径; 并且金属螯合剂是选自EDTA，PDTA，CyDTA，NTA，DTPA和HEDTA基螯合剂中的至少一种。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式