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1. 发明公开

KR1020080097705A 리소그래피 시뮬레이터 无效
标题翻译：算术模拟器
公开(公告)号：KR1020080097705A
公开(公告)日：2008-11-06
申请号：KR1020070042885
申请日：2007-05-03
申请人： 인하대학교 산학협력단
发明人： 원태영 , 신우정 , 양승수 , 이정복 , 오혜근
IPC分类号： H01L21/027
CPC分类号： H01L21/0274 , G03F7/705
摘要： The lithography simulator is provided to perform the complicated process according to the chemically amplified resist which is the deep ultraviolet resist. The integration lithography simulator builds the same environment with the same language. Each light, and electron beam, X ray lithography simulators are under one GUI environment. It made possible for the same graphic process is possible for being treated by making the same data.
摘要翻译：提供光刻模拟器以根据作为深紫外线抗蚀剂的化学放大抗蚀剂进行复杂的工艺。集成光刻模拟器使用相同的语言构建相同的环境。每个光和电子束，X射线光刻模拟器都在一个GUI环境下。通过制作相同的数据可以使相同的图形处理成为可能。

2. 发明公开

KR1020080077708A 광 리소그래피를 위한 레지스트 플로우 모델링 방법 无效
标题翻译：用于精确的光刻建模的电阻流程建模算法
公开(公告)号：KR1020080077708A
公开(公告)日：2008-08-26
申请号：KR1020070017206
申请日：2007-02-21
申请人： 인하대학교 산학협력단
发明人： 원태영 , 김지석 , 오혜근 , 박승욱
IPC分类号： H01L21/027
CPC分类号： G03F7/705 , G03F7/70341 , G03F7/70566
摘要： A resist flow process modeling algorithm for optic lithography modeling is provided to generate an accurate lithography model by extracting precisely parameters of elements generated from measurement patterns. To determine an optimum resist flow model, a model adjusted on a process and a target pattern is determined using a lithography system having a resist unit level process. A PEB(Position Error Bound) parameter extracting algorithm on a target pattern for test is selected using the process. Plural diffraction engineering elements are selected. The test pattern is optimized and a corresponding wave length is selected. Then, an algorithm for determining parameters is executed according to the selection based on plural polarization effects. By selecting optimum one of the diffraction engineering elements, a final lithography model is obtained.
摘要翻译：提供了一种用于光学光刻建模的抗蚀剂流程建模算法，通过提取从测量图案产生的元素的精确参数来生成精确的光刻模型。为了确定最佳抗蚀剂流动模型，使用具有抗蚀剂单元级过程的光刻系统确定在工艺和目标图案上调整的模型。使用该过程选择用于测试的目标模式上的PEB（位置误差界限）参数提取算法。选择多个衍射工程元素。优化测试图案，并选择相应的波长。然后，根据多极化效应的选择，执行用于确定参数的算法。通过选择最佳的衍射工程元素之一，获得最终光刻模型。

3. 发明公开

KR1020090114489A 경험적 데이터를 이용한 몬테 카를로 이온 주입 기법알고리즘 无效
标题翻译：使用实际数据的蒙特卡洛离子植入技术的算法
公开(公告)号：KR1020090114489A
公开(公告)日：2009-11-04
申请号：KR1020080040149
申请日：2008-04-30
申请人： 인하대학교 산학협력단
发明人： 원태영 , 박순열 , 오혜근 , 김은진
IPC分类号： H01L21/02 , H01L21/265
摘要： PURPOSE: An algorithm of ion implant technique of Monte Carle using empirical data is provided to use each profile as existing data though the ion implantation is successively performed. CONSTITUTION: The simulation is performed using the Monte Carle algorithm on the nano-scale semiconductor ion injection process. The existing database is searched and read. Each simulation result is especially made into a database by parameter. Accordingly, the simulation which uses the existing data as each profile limits the processing condition that doesn't exist in the database.
摘要翻译：目的：提供使用经验数据的Monte Carle离子注入技术的算法，通过连续执行离子注入，使用每个曲线作为现有数据。构成：使用蒙特卡勒算法在纳米级半导体离子注入工艺上进行模拟。搜索和读取现有的数据库。每个模拟结果通过参数特别成为一个数据库。因此，使用现有数据作为每个配置文件的模拟限制了数据库中不存在的处理条件。

4. 发明公开

KR1020080074246A 특정 패턴 형성을 위한 리소그래피 공정 전산 모사 방법 无效
标题翻译：用于形成特定图案的算法
公开(公告)号：KR1020080074246A
公开(公告)日：2008-08-13
申请号：KR1020070012984
申请日：2007-02-08
申请人： 인하대학교 산학협력단
发明人： 오혜근 , 장욱 , 원태영 , 신우정
IPC分类号： H01L21/027
CPC分类号： H01L21/0274
摘要： A lithography process for forming a specific pattern is provided to form a desired pattern by controlling properly a stacked structure of semiconductors. A lithography process is performed to form a desired shape of pattern on a wafer(1) in a semiconductor manufacturing process. A first and second semiconductors(2,3) are stacked in a vertical direction. The desired shape of pattern is easily obtained by applying different etch processes according to optical contrast characteristics of each semiconductor. The first and second semiconductors are formed by controlling properly etch ratios according to refractive indexes and diffractive indexes. The first and second semiconductors have different optical contrasts or similar optical contrasts.
摘要翻译：提供用于形成特定图案的光刻工艺以通过适当地控制半导体的堆叠结构形成期望的图案。在半导体制造工艺中进行光刻工艺以在晶片（1）上形成期望的图案形状。第一和第二半导体（2,3）在垂直方向上堆叠。通过根据每个半导体的光学对比特性应用不同的蚀刻工艺，可以容易地获得期望的图案形状。第一和第二半导体通过根据折射率和衍射指数控制合适的蚀刻比例来形成。第一和第二半导体具有不同的光学对比度或类似的光学对比度。

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