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1. 发明公开

KR1020060026888A 집적 전력 증폭기 회로 无效
标题翻译：集成功率放大器电路
公开(公告)号：KR1020060026888A
公开(公告)日：2006-03-24
申请号：KR1020057024903
申请日：2004-06-17
申请人： 시게세미컨덕터 유에스 코포레이션
发明人： 도헤티마크 , 길리스존 , 엠씨파트린마이클 , 헬름스,데이비드 , 안토그네티,필립
IPC分类号： H03F1/30 , H03F3/20
CPC分类号： H03F1/0261 , H03F1/0233 , H03F1/30 , H03F3/195 , H03F2200/207 , H03F2200/447 , H03F2200/451 , H03F2200/504
摘要： Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.
摘要翻译：功率放大器的现有技术架构使用大量的管芯区域，并利用具有净高的制造成本和大的相关封装面积的多个集成电路技术。提出了一种新的方案，其中使用几个感测和控制信号来提供对与集成半导体功率放大器相关的关键优点的精细和总体控制。使用这些感应和控制信号的方式和位置对于实现最可制造和最经济的集成放大器至关重要。根据本发明的第一实施例，提供了一种用于三级功率放大器集成电路的双反馈低功率调节电路。根据本发明的第二实施例，提供了一种用于三级功率放大器集成电路的具有低RF输出信号功率调节的电流源反馈电路。根据本发明的第三实施例，结合三级功率放大器集成电路的集成对数电流检测器电路形式的检测器电路。本发明的三个实施例有利地克服了现有技术的限制。

2. 发明公开

KR1020060063806A 집적 전력 증폭기 회로 无效
标题翻译：集成功率放大器电路
公开(公告)号：KR1020060063806A
公开(公告)日：2006-06-12
申请号：KR1020057024898
申请日：2004-06-17
申请人： 시게세미컨덕터 유에스 코포레이션
发明人： 도헤티마크 , 길리스존 , 엠씨파트린마이클 , 헬름스,데이비드 , 안토그네티,필립
IPC分类号： H03F3/20 , H03F3/21 , H03F3/343 , H03F3/347
CPC分类号： H03G3/3042 , H03F1/0261 , H03F3/211 , H03F3/347 , H03F2200/504 , H03F2200/99 , H03G1/0017 , H03G3/004
摘要： In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three- stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.
摘要翻译：根据本发明的第一实施例，提供了一种用于三级功率放大器集成电路的双反馈低功率调节电路。根据本发明的第二实施例，提供了一种用于三级功率放大器集成电路的具有低RF输出信号功率调节的电流源反馈电路。根据本发明的第三实施例，结合三级功率放大器集成电路的集成对数电流检测器电路形式的检测器电路。本发明的三个实施例有利地克服了现有技术的限制。

3. 发明公开

KR1020060019613A 집적 전력 증폭기 회로 无效
公开(公告)号：KR1020060019613A
公开(公告)日：2006-03-03
申请号：KR1020057024900
申请日：2004-06-17
申请人： 시게세미컨덕터 유에스 코포레이션
发明人： 도헤티마크 , 길리스존 , 엠씨파트린마이클 , 헬름스,데이비드 , 안토그네티,필립
IPC分类号： H03F1/30 , H03F3/20
CPC分类号： H03F3/195 , H03F1/0233 , H03F1/0261 , H03F1/30 , H03F2200/207 , H03F2200/447 , H03F2200/451 , H03F2200/504
摘要： Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.

4. 发明公开

KR1020060019612A 집적 전력 증폭기 회로 无效
标题翻译： 집적전력증폭기회로
公开(公告)号：KR1020060019612A
公开(公告)日：2006-03-03
申请号：KR1020057024899
申请日：2004-06-17
申请人： 시게세미컨덕터 유에스 코포레이션
发明人： 도헤티마크 , 길리스존 , 엠씨파트린마이클 , 헬름스,데이비드 , 안토그네티,필립
IPC分类号： H03F1/30 , H03F3/20
CPC分类号： H03F3/195 , H03F1/0233 , H03F1/0261 , H03F1/30 , H03F2200/447 , H03F2200/451 , H03F2200/504
摘要： Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.
摘要翻译：功率放大器的现有技术架构采用大量裸片区域，并且利用多个集成电路技术，净制造成本较高且相关联的封装面积较大。提出了一种新的方案，其中使用多个感测和控制信号来提供对与集成半导体功率放大器相关的关键性能指标的精确和总体控制。如何以及在何处使用这些感测和控制信号对于实现最可制造且最经济的集成放大器是至关重要的。根据本发明的第一实施例，提供了一种用于三级功率放大器集成电路的双反馈 - 低功率调节电路。根据本发明的第二实施例，提供了一种用于三级功率放大器集成电路的具有低RF输出信号功率调节的电流源反馈电路。根据本发明的第三实施例，一种结合三级功率放大器集成电路的集成对数电流检测器电路形式的检测器电路。本发明的三个实施例有利地克服了现有技术的限制。

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