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1. 发明公开

KR1020120106571A 레이저 다이오드 소자 조립체 및 그 구동 방법 无效
标题翻译：激光二极管元件组件及其驱动方法
公开(公告)号：KR1020120106571A
公开(公告)日：2012-09-26
申请号：KR1020120024405
申请日：2012-03-09
申请人： 소니 주식회사 , 도호쿠 다이가쿠
发明人： 오끼도모유끼 , 구라모또마사루 , 고다린따로 , 와따나베히데끼 , 요꼬야마히로유끼
IPC分类号： H01S5/22 , H01S5/10
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： PURPOSE: A laser diode element assembly and a driving method thereof are provided to efficiently irradiate laser light by obtaining high power. CONSTITUTION: A laser diode device(10) has a first conductivity type. A first compound semiconductor layer is made of a GaN(Gallium Nitride) compound semiconductor. A third compound semiconductor layer(40) includes a light emitting region. A second compound semiconductor layer(50) has a second conductive type which is different from the first conductivity type. The second compound semiconductor layer is made of the GaN compound semiconductor. A second electrode is formed on the second compound semiconductor layer. A first electrode(61) is electrically connected to the first compound semiconductor layer. A laminate structure includes a ridge stripe structure(56). [Reference numerals] (AA) Lens; (BB) Optical filter; (CC) ←external resonator → length X'; (DD) Light reflective cross section; (EE) Light emitted cross section
摘要翻译：目的：提供一种激光二极管元件组件及其驱动方法，以通过获得高功率来有效地照射激光。构成：激光二极管装置（10）具有第一导电类型。第一化合物半导体层由GaN（氮化镓）化合物半导体制成。第三化合物半导体层（40）包括发光区域。第二化合物半导体层（50）具有与第一导电类型不同的第二导电类型。第二化合物半导体层由GaN化合物半导体制成。在第二化合物半导体层上形成第二电极。第一电极（61）与第一化合物半导体层电连接。层叠结构包括脊状条纹结构（56）。（附图标记）（AA）透镜; （BB）滤光片; （CC）←外部谐振器→长度X'; （DD）光反射截面; （EE）光发射截面

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