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1. 发明公开

KR1020080005133A 면 발광형 반도체 레이저 无效
标题翻译：表面发射型半导体激光器
公开(公告)号：KR1020080005133A
公开(公告)日：2008-01-10
申请号：KR1020070068018
申请日：2007-07-06
申请人： 세이코 엡슨 가부시키가이샤
发明人： 모찌즈끼마사미쯔
IPC分类号： H01S5/18
CPC分类号： H01S5/18386 , H01S5/18311 , H01S5/18327 , H01S2301/166 , H01S2301/176
摘要： A surface-emitting type semiconductor laser is provided to reduce oscillation modes of a laser beam and to perform higher output than in case of smaller diameter of a current constricted layer. A surface-emitting type semiconductor laser includes a lower mirror(10), an activation layer(103), and an upper mirror(20). The activation layer is formed on the lower mirror. The upper mirror is formed on the activation layer and includes first and second areas(70,72). A plurality of vacant holes(60) are formed on the first area. The second area is formed inside the first area not having the vacant holes, is flat and circular. The radius enables an energy increase rate of the activation layer to be plus in a low-order oscillation mode and to be minus in a high-oscillation mode. The vacant holes has a depth which enables the energy increase rate of the activation layer to be plus in the low-order oscillation mode and to be minus in the high-oscillation mode.
摘要翻译：提供表面发射型半导体激光器以减少激光束的振荡模式并且执行比在电流限制层的较小直径的情况下更高的输出。表面发射型半导体激光器包括下反射镜（10），激活层（103）和上反射镜（20）。活化层形成在下反射镜上。上反射镜形成在激活层上并且包括第一和第二区域（70,72）。在第一区域上形成有多个空孔（60）。第二区域形成在没有空孔的第一区域内，是扁平圆形的。半径使激活层的能量增加率在低阶振荡模式下为正，并且在高振荡模式中为负。空穴的深度使活化层的能量增加率在低阶振荡模式下为正，在高振荡模式中为负。

2. 发明授权

KR100826732B1 면발광형 반도체 레이저 有权
标题翻译：表面发射型半导体激光器
公开(公告)号：KR100826732B1
公开(公告)日：2008-04-30
申请号：KR1020070063029
申请日：2007-06-26
申请人： 세이코 엡슨 가부시키가이샤
发明人： 모찌즈끼마사미쯔
IPC分类号： H01S5/18
CPC分类号： H01S5/18313 , H01S5/18344 , H01S5/18347 , H01S2301/166 , H01S2301/18
摘要： 레이저광의 발진 모드수를 삭감할 수가 있고, 또한, 단순하게 전류 협착층의 직경을 작게 하는 경우보다도 고출력화가 가능한 면발광형 반도체 레이저를 제공한다. 본 발명에 따른 면발광형 반도체 레이저(100)는, 하부 미러(10)와, 하부 미러의 상방에 형성된 활성층(103)과, 활성층의 상방에 형성된 상부 미러(20)를 포함하고, 하부 미러 및 상부 미러는, 복수의 단위 다층막을 적층한 다층막 미러이며, 단위 다층막은, 상하 방향으로 적층된 1조의 저굴절율층과 고굴절율층을 갖고, 단위 다층막은, 하기 수학식 1을 만족하고, 활성층은, 하기 수학식 2를 만족한다.
d
D D … (1)
d
A > mλ/2n
A … (2)
단, λ는, 면발광형 반도체 레이저의 설계 파장이며, m은, 양의 정수이며, d
D 는, 단위 다층막의 두께이며, n
D 는, 단위 다층막의 평균 굴절율이며, d
A 는, 활성층의 두께이며, n
A 는, 활성층의 평균 굴절율이다.
단위 다층막, 면발광 반도체 레이저, 전류 협착층, 상부 미러, 하부 미러, 저굴절율층, 고굴절율층

3. 发明公开

KR1020080000530A 면발광형 반도체 레이저 有权
标题翻译：表面发射型半导体激光器
公开(公告)号：KR1020080000530A
公开(公告)日：2008-01-02
申请号：KR1020070063029
申请日：2007-06-26
申请人： 세이코 엡슨 가부시키가이샤
发明人： 모찌즈끼마사미쯔
IPC分类号： H01S5/18
CPC分类号： H01S5/18313 , H01S5/18344 , H01S5/18347 , H01S2301/166 , H01S2301/18
摘要： A surface-emitting type semiconductor laser is provided to implement a higher power than a power in a case of reducing a diameter of a current narrowing layer. A surface-emitting type semiconductor laser includes a lower mirror(10), an active layer(103) and an upper mirror(20). The active layer is formed on an upper part of the lower mirror. The upper mirror is formed on an upper part of the active layer. The lower mirror and upper mirror are a multi-layer mirror that a plurality of unit multi-layers are stacked. The unit multi-layers have a couple of low refractive index and high refractive index. The unit multi-layers satisfy an equation 1 as following dD
摘要翻译：在减小电流变窄层的直径的情况下，提供表面发射型半导体激光器以实现比功率更高的功率。表面发射型半导体激光器包括下反射镜（10），有源层（103）和上反射镜（20）。活性层形成在下反射镜的上部。上反射镜形成在有源层的上部。下反射镜和上反射镜是堆叠多个单元多层的多层反射镜。单元多层具有一对低折射率和高折射率。单位多层满足等式1如下dD <λ/ 2nD。有源层满足等式2，如下面的dA <λ/ 2nA。 λ表示表面发射型半导体激光器的设计波长。 m表示正整数。 dD表示单位多层的深度。 nD表示单位多层的平均折射率。 dA是有源层的深度。 nA表示有源层的平均折射率。

4. 发明公开

KR1020070075336A 면 발광형 반도체 레이저 无效
标题翻译：表面发射型半导体激光器
公开(公告)号：KR1020070075336A
公开(公告)日：2007-07-18
申请号：KR1020070003173
申请日：2007-01-11
申请人： 세이코 엡슨 가부시키가이샤
发明人： 모찌즈끼마사미쯔
IPC分类号： H01S5/18 , H01S5/00
CPC分类号： H01S5/18386 , H01S5/02461 , H01S5/18305 , H01S5/18311 , H01S5/18319 , H01S2301/176 , H01S2301/18
摘要： A surface-emitting type semiconductor laser is provided to reduce the number of modes and to realize the high input. A surface-emitting type semiconductor laser includes a first mirror(102), an active layer(103), a second mirror(104), a current restraining layer(105), and diffraction gratings(106-109). The active layer(103) is formed at an upper part of the first mirror(102). The second mirror(104) is formed at an upper part of the active layer(103). The current restraining layer(105) is formed at the upper part or a lower part of the active layer(103). The diffraction gratings(106-109) are formed at the upper part of the active layer(103), and are arranged inside the surface which is perpendicular to the direction of light emitting. A light confining area surrounded by the diffraction gratings(106-109) is formed inside an area surrounded by the current restraining layer(105).
摘要翻译：提供表面发射型半导体激光器以减少模式数量并实现高输入。表面发射型半导体激光器包括第一反射镜（102），有源层（103），第二反射镜（104），电流限制层（105）和衍射光栅（106-109）。活性层（103）形成在第一反射镜（102）的上部。第二反射镜（104）形成在有源层（103）的上部。电流限制层（105）形成在有源层（103）的上部或下部。衍射光栅（106-109）形成在有源层（103）的上部，并且布置在垂直于发光方向的表面内。在由电流抑制层（105）包围的区域内形成由衍射光栅（106-109）包围的光限制区域。

5. 发明公开

KR1020070075337A 면발광형 반도체 레이저 无效
标题翻译：表面发射型半导体激光器
公开(公告)号：KR1020070075337A
公开(公告)日：2007-07-18
申请号：KR1020070003178
申请日：2007-01-11
申请人： 세이코 엡슨 가부시키가이샤
发明人： 모찌즈끼마사미쯔
IPC分类号： H01S5/183
CPC分类号： H01S5/18391 , B82Y20/00 , H01S5/024 , H01S5/0425 , H01S5/105 , H01S5/18305 , H01S5/18313 , H01S5/18327 , H01S5/18338 , H01S5/18369 , H01S5/18377 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A surface-emitting type semiconductor laser is provided to reduce the number of oscillation modes and realize a high output by making an inner diameter of a current restraining layer large and a diameter of a light confining area small. A surface-emitting type semiconductor laser includes a first mirror(102), an active layer(103), a second mirror(104), and a current restraining layer(105). The active layer(103) is formed at an upper part of the first mirror(102). The second mirror(104) is formed at an upper part of the active layer(103). The current restraining layer(105) is formed at the upper part or a lower part of the active layer(103). The second mirror(104) has a plurality of concave units(111) arranged inside a surface which is perpendicular to the direction of light emission. A light confining area surrounded by the concave units(111) is formed inside an area surrounded by the current restraining layer(105).
摘要翻译：提供了表面发射型半导体激光器，以减少振荡模式的数量，并且通过使电流限制层的内径大而且光限制区域的直径变小而实现高输出。表面发射型半导体激光器包括第一反射镜（102），有源层（103），第二反射镜（104）和电流抑制层（105）。活性层（103）形成在第一反射镜（102）的上部。第二反射镜（104）形成在有源层（103）的上部。电流限制层（105）形成在有源层（103）的上部或下部。第二反射镜（104）具有布置在垂直于发光方向的表面内的多个凹形单元（111）。在由电流限制层（105）包围的区域内形成由凹部（111）包围的光限制区域。

6. 发明公开

KR1020070065226A 면 발광형 반도체 레이저 및 그 제조 방법 无效
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：KR1020070065226A
公开(公告)日：2007-06-22
申请号：KR1020060129134
申请日：2006-12-18
申请人： 세이코 엡슨 가부시키가이샤
发明人： 모찌즈끼마사미쯔
IPC分类号： H01S5/18
CPC分类号： H01S5/18327 , B82Y20/00 , H01S5/024 , H01S5/18305 , H01S5/18311 , H01S5/18369 , H01S5/204 , H01S5/3432 , H01S2301/166 , H01S2301/176
摘要： A surface-emitting type semiconductor laser and a manufacturing method thereof are provided to reduce the number of modes and to perform a high output. A surface-emitting type semiconductor laser includes a substrate(101), a first mirror(102), an active layer(103), and a second mirror(104). The substrate(101) is composed of a semiconductor substrate. The first mirror(102) is a distribution reflective multi-layered mirror. The active layer consists of a GsAs well layer and an Al0.3Ga0.7As barrier layer. The second mirror includes a current blocking layer(105), a high refraction rate area(106), and a low refraction rate area(107). The current confined layer(105) is formed by an oxide confined layer or a proton injection area. The high refraction rate area(106) is formed on a layer where the current blocking layer(105) is installed. The low refraction rate area(107) embraces the high refraction rate area(106).
摘要翻译：提供表面发射型半导体激光器及其制造方法以减少模式数量并执行高输出。表面发射型半导体激光器包括基板（101），第一反射镜（102），有源层（103）和第二反射镜（104）。基板（101）由半导体基板构成。第一反射镜（102）是分布反射多层反射镜。有源层由GsAs阱层和Al0.3Ga0.7As势垒层组成。第二反射镜包括电流阻挡层（105），高折射率区域（106）和低折射率区域（107）。电流限制层（105）由氧化物限制层或质子注入区形成。高折射率区域（106）形成在安装有电流阻挡层（105）的层上。低折射率区域（107）包围高折射率区域（106）。

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