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    • 6. 发明公开
    • 보호 소자를 갖춘 발광소자
    • 具有保护元件的发光装置
    • KR1020090014327A
    • 2009-02-10
    • KR1020080135772
    • 2008-12-29
    • 삼성전기주식회사렌슬러 폴리테크닉 인스티튜트
    • 조제희홍루오김종규박용조손철수슈베르트이.프레드
    • H01L33/38
    • H01L27/15H01L2924/0002H01L2924/00
    • A light emitting device having protection element is provided to protect lighting-emitting area from ESD by parallely setting up the resistive protection element as internal current bypass of the small current in the lighting-emitting area. An emitting device includes a lower semiconductor material layer, an active layer, a top semiconductor material layer, a first electrode layer(114), a second electrode layer(115) and resistive protection layer(120). The top semiconductor material layer, an active layer, a lower semiconductor material layer and active layer are defined as resistance Rf when a positive voltage is applied to the first electrode layer relative to the second electrode layer. The top semiconductor material layer, an active layer, a lower semiconductor material layer and active layer are defined as resistance Rf when a negative voltage is applied to the first electrode layer relative to the second electrode layer. The resistive protection layer, Rs is lower than Rr and larger than Rf.
    • 具有保护元件的发光器件被提供以通过平行地将电阻保护元件设置为发光区域中的小电流的内部电流旁路来保护发光区域免受ESD。 发光器件包括下半导体材料层,有源层,顶部半导体材料层,第一电极层(114),第二电极层(115)和电阻保护层(120)。 上半导体材料层,有源层,下半导体材料层和有源层被定义为当相对于第二电极层向第一电极层施加正电压时的电阻Rf。 顶部半导体材料层,有源层,下半导体材料层和有源层被定义为当相对于第二电极层向第一电极层施加负电压时的电阻Rf。 电阻保护层Rs低于Rr且大于Rf。
    • 7. 发明公开
    • 고투과 광학 박막 및 이를 구비하는 반도체 발광소자
    • 具有高传输光学薄膜和半导体发光器件
    • KR1020080070475A
    • 2008-07-30
    • KR1020070012368
    • 2007-02-06
    • 삼성전기주식회사렌슬러 폴리테크닉 인스티튜트
    • 조제희몬트프랭크윌헬름손철수김종규송준오슈베르트이프레드
    • H01L33/00B82Y20/00
    • A high-transmitting optical thin film is provided to reduce optical loss and maximize light transmission efficiency by suppressing generation of optical reflection caused by a difference of refractive indexes between a semiconductor material and air or an encapsulation material. A second material layer(14) is formed on a first material layer(11) with a first refractive index, having a second refractive index smaller than the first refractive index. A graded-refractive index layer(12) is made of a multilayered structure whose distribution of the refractive index gradually reduces in a range from the first refractive index to the second refractive index as it goes from the first material layer to the second material layer, interposed between the first and second material layers. The first and second refractive indexes can be selected from a range of 1 to 4.
    • 通过抑制由半导体材料与空气或封装材料之间的折射率的差异引起的光反射的产生,提供高透射性的光学薄膜,以减少光学损耗并使光的透射效率最大化。 在具有第一折射率的第一材料层(11)上形成第二材料层(14),其具有小于第一折射率的第二折射率。 渐变折射率层(12)由折射率分布在从第一材料层到第二材料层从第一折射率到第二折射率的范围内逐渐降低的多层结构制成, 介于第一和第二材料层之间。 第一和第二折射率可以从1到4的范围内选择。