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    • 1. 发明公开
    • 유기 박막트랜지스터와 이를 구비한 유기 박막트랜지스터기판 및 이의 제조 방법
    • 有机薄膜晶体管,有机薄膜晶体管基板及其制造方法
    • KR1020080043447A
    • 2008-05-19
    • KR1020060112017
    • 2006-11-14
    • 삼성전자주식회사
    • 황태형신성식
    • H01L29/786G02F1/133G02F1/136H01L51/00
    • H01L51/0558H01L27/3262H01L27/3276H01L51/105
    • An organic thin film transistor, an organic thin film transistor substrate including the same, and a method of manufacturing the same are provided to maintain on-off voltages by forming an organic semiconductor layer within a hole generated by a bank insulating layer. A gate insulating layer is formed on a gate electrode. A drain electrode is formed on the gate insulating layer. A source electrode is formed on the gate insulating layer to surround the drain electrode. A bank insulating layer(70) of a ring-shaped structure is formed on the source electrode to expose the source electrode and the drain electrode. An organic semiconductor layer is formed on the source electrode and the drain electrode exposed by the bank insulating layer. The bank insulating layer includes an intermediate bank insulating layer which is formed in a circular shape on the drain electrode.
    • 提供有机薄膜晶体管,包括该有机薄膜晶体管的有机薄膜晶体管基板及其制造方法,以通过在由绝缘层产生的孔内形成有机半导体层来维持开关电压。 在栅电极上形成栅极绝缘层。 在栅极绝缘层上形成漏电极。 源电极形成在栅极绝缘层上以包围漏电极。 在源电极上形成环状结构的堤绝缘层(70),以使源电极和漏电极露出。 在由绝缘层露出的源电极和漏电极上形成有机半导体层。 堤绝缘层包括在漏电极上形成为圆形的中间隔离层。
    • 2. 发明公开
    • 박막 트랜지스터 기판, 이를 구비한 표시 장치 및 그 제조방법들
    • 薄膜晶体管及使用其的显示装置及其制造方法
    • KR1020090095206A
    • 2009-09-09
    • KR1020080020392
    • 2008-03-05
    • 삼성전자주식회사
    • 황태형전형일홍석준
    • G02F1/1335G02F1/136
    • H01L27/12H01L27/1214H01L27/1259H01L29/78633
    • A thin film transistor substrate, a display device having the same and manufacturing methods thereof are provided to suppress the deterioration of a semiconductor layer within thin film transistor which is caused by the external light, effectively. A thin film transistor(101) comprises a gate electrode(124), a semiconductor layer(140), a source electrode(165) and a drain electrode(166). The thin film transistor is formed on a substrate. A pixel electrode(180) is formed on the thin film transistor. The pixel electrode is electrically connected to the drain electrode. A light blocking layer(191) is formed on the pixel electrode and is overlapped with the semiconductor layer. The light blocking layer contains the material for blocking the light of a wavelength area band which causes the deterioration of the semiconductor layer.
    • 提供薄膜晶体管基板,具有该薄膜晶体管基板的显示装置及其制造方法,以有效地抑制由外部光引起的薄膜晶体管内的半导体层的劣化。 薄膜晶体管(101)包括栅电极(124),半导体层(140),源电极(165)和漏电极(166)。 薄膜晶体管形成在基板上。 像素电极(180)形成在薄膜晶体管上。 像素电极电连接到漏电极。 遮光层(191)形成在像素电极上并与半导体层重叠。 遮光层包含用于阻挡导致半导体层劣化的波长区域带的光的材料。
    • 3. 发明公开
    • 박막 트랜지스터 기판 및 이의 제조 방법
    • 薄膜晶体管基板及其制造方法
    • KR1020080061590A
    • 2008-07-03
    • KR1020060136500
    • 2006-12-28
    • 삼성전자주식회사
    • 황태형신성식노남석김상일
    • G02F1/136
    • H01L27/1266H01L27/1214H01L27/1288
    • A TFT substrate and a manufacturing method thereof are provided to improve characteristics of a TFT and reduce a size of the TFT by using single crystal silicon as a semiconductor layer, thereby improving an aperture ratio and transmittance. A TFT(Thin Film Transistor) substrate comprises first and second substrates. The first substrate includes a pixel area(150) and a TFT area(160). The second substrate includes a TFT and is attached to the TFT area. The first substrate comprises a pixel electrode(20), a passivation layer, a first drain electrode(41), a gate line(50) and a data line(60). The second substrate comprises a semiconductor layer, ohmic contact layers(93,95), an insulating layer, a second drain electrode(75), a source electrode(73), a gate electrode(71), a gate connection unit(79), a connection unit(110) and a data connection unit(120). The semiconductor layer includes single crystal silicon.
    • 提供TFT基板及其制造方法以通过使用单晶硅作为半导体层来改善TFT的特性并减小TFT的尺寸,从而提高开口率和透射率。 TFT(薄膜晶体管)基板包括第一和第二基板。 第一基板包括像素区域(150)和TFT区域(160)。 第二基板包括TFT并且附接到TFT区域。 第一衬底包括像素电极(20),钝化层,第一漏电极(41),栅线(50)和数据线(60)。 第二基板包括半导体层,欧姆接触层(93,95),绝缘层,第二漏电极(75),源电极(73),栅极电极(71),栅极连接单元(79) ,连接单元(110)和数据连接单元(120)。 半导体层包括单晶硅。
    • 4. 发明公开
    • 표시패널
    • 显示面板
    • KR1020080023381A
    • 2008-03-14
    • KR1020060087146
    • 2006-09-11
    • 삼성전자주식회사
    • 황태형노남석김상일
    • G06F3/041G06F3/03G06F3/00
    • G02F1/13338G06F3/0412G06F2203/04103H01B5/14H01B13/00
    • A display panel is provided to prevent image quality deterioration caused by a conventional manufacturing method by positioning the touch screen upon the lower portion of the display panel which is formed with a display substrate made of a flexible material. A display substrate(300) comprises a base substrate(100), a pixel unit(200) formed at one surface of the base substrate, and a first transparent electrode(110) formed on the other surface of the base substrate. A first polarizing unit(400) comprises a first polarizing plate(410) positioned at the upper side of the display substrate and a common electrode(420) formed at the one surface of the first polarizing plate faced to the pixel unit. A liquid crystal layer is inserted between the display substrate and the first polarizing unit. A second polarizing unit(600) comprises a second polarizing plate(610) positioned at the lower side of the display substrate, and a second transparent electrode(620) which is formed upon the one surface of the second polarizing plate faced to the first transparent electrode, and generates location information by connecting to the first transparent electrode electrically.
    • 提供了一种显示面板,以通过将触摸屏定位在由柔性材料制成的显示基板形成的显示面板的下部来防止由传统制造方法引起的图像质量劣化。 显示基板(300)包括基底(100),形成在基底基板的一个表面的像素单元(200)和形成在基底基板的另一个表面上的第一透明电极(110)。 第一偏振单元(400)包括位于显示基板的上侧的第一偏振板(410)和形成在第一偏振片的面向像素单元的一个表面的公共电极(420)。 在显示基板和第一偏振单元之间插入液晶层。 第二偏振单元(600)包括位于显示基板的下侧的第二偏振片(610)和形成在第二偏振片的与第一透明 并且通过电连接到第一透明电极来产生位置信息。
    • 5. 发明公开
    • 표시 기판
    • 显示基板
    • KR1020080006891A
    • 2008-01-17
    • KR1020060066201
    • 2006-07-14
    • 삼성전자주식회사
    • 윤수완채종철황태형
    • G02F1/136
    • G02F1/1368G02F1/133305G02F2001/13606H01L29/78618
    • A display substrate is provided to minimize the deviation value of parasite capacitance by the mis-alignment between a gate electrode and a drain electrode. Gate lines(GL) extended on a base substrate toward the first direction and data lines(DL) extended toward the second direction vertical to the first direction are crossed with each other so that pixel members are formed. The first switching device(TFT1) is electrically connected with a pixel electrode formed at each pixel member. The first gate electrode(G1) is connected with each gate line and includes the first electrode protruded toward the second direction and the second electrode separated from the first electrode toward the first direction. The first source electrode(S1) is connected with each source line and extended toward the first direction. Both ends of the first source electrode are overlapped with the first and second electrodes. The first drain electrode(D1) is separated from the first source electrode toward the second direction and electrically connected with the pixel electrode. Both ends of the first drain electrode are overlapped with the first and second electrodes.
    • 提供显示基板,以通过栅电极和漏电极之间的不对准来最小化寄生电容的偏差值。 在基底基板上朝向第一方向延伸的栅极线(GL)和与第一方向垂直的第二方向延伸的数据线(DL)彼此交叉,从而形成像素部件。 第一开关器件(TFT1)与形成在每个像素部件上的像素电极电连接。 第一栅电极(G1)与各栅极线连接,并且包括朝向第二方向突出的第一电极和从第一电极朝向第一方向分离的第二电极。 第一源电极(S1)与每个源极线连接并朝向第一方向延伸。 第一源极的两端与第一和第二电极重叠。 第一漏电极(D1)与第一源电极朝向第二方向分离,并与像素电极电连接。 第一漏电极的两端与第一电极和第二电极重叠。
    • 7. 发明公开
    • 액정 표시 장치의 제조 방법
    • 制造液晶显示方法
    • KR1020080054574A
    • 2008-06-18
    • KR1020060126979
    • 2006-12-13
    • 삼성전자주식회사
    • 전형일황태형
    • G02F1/136H01L29/786
    • H01L27/1266G02F1/136
    • A method of manufacturing an LCD(Liquid Crystal Display) is provided to form a flexible TFT(Thin Film Transistor) substrate after TFTs are accomplished, thereby preventing the TFTs from mis-alignment due to characteristic of the flexible substrate. A TFT is formed on an auxiliary substrate made of glass. A resin is coated on the TFT to form a flexible substrate having a flat surface(110). The auxiliary glass substrate is removed using HF. The TFT is formed through a step of forming a pixel electrode(191) on the auxiliary substrate, a step of forming a switching element having first, second and third terminals(124,173,175) connected to the pixel electrode, a step of forming a first signal line connected to the second terminal of the switching element, and a step of forming a second signal line connected to the third terminal of the switching element.
    • 提供制造LCD(液晶显示器)的方法以在TFT完成之后形成柔性TFT(薄膜晶体管)基板,由此由于柔性基板的特性而防止TFT错位。 在由玻璃制成的辅助基板上形成TFT。 在TFT上涂布树脂以形成具有平坦表面(110)的柔性基底。 使用HF除去辅助玻璃基板。 通过在辅助基板上形成像素电极(191)的步骤形成TFT,形成具有连接到像素电极的第一,第二和第三端子(124,173,175)的开关元件的步骤,形成第一信号 线路连接到开关元件的第二端子,以及形成连接到开关元件的第三端子的第二信号线的步骤。
    • 8. 发明公开
    • 박막 트랜지스터 기판
    • 薄膜晶体管基板
    • KR1020080030799A
    • 2008-04-07
    • KR1020060097144
    • 2006-10-02
    • 삼성전자주식회사
    • 양성훈김소운황태형김연주윤수완채종철
    • G02F1/136H01L29/786
    • H01L27/283H01L27/285H01L27/3262H01L51/105
    • A TFT(Thin Film Transistor) substrate is provided to arrange a source electrode such that the source electrode covers the overall width of a gate line to make a parasitic capacitance uniform and allocate first and second data lines and first and second drain electrodes for a single pixel to maintain the pixel even though one of the data lines and the drain electrodes is cut. A TFT substrate includes an insulating substrate, a gate line(22), an active layer(40), first and second data lines(52a,52b), first and second drain electrodes(55a,55b) and a source electrode(56). The gate line is formed on the insulating substrate and includes a gate electrode(26). The active layer is superposed on the gate electrode. The first and second data lines are insulated from the gate line and intersect the gate line. The first and second drain electrodes are respectively branched off from the first and second data lines and superposed on the active layer. The source electrode is disposed between the first and second drain electrodes and formed on the gate electrode. The width of the source electrode is greater than the width of the gate electrode.
    • 提供TFT(薄膜晶体管)基板以排列源电极,使得源电极覆盖栅极线的整个宽度以使寄生电容均匀,并将第一和第二数据线以及第一和第二漏极分别用于单个 像素,以便即使切割数据线和漏极之一来维持像素。 TFT基板包括绝缘基板,栅极线(22),有源层(40),第一和第二数据线(52a,52b),第一和第二漏极电极(55a,55b)和源电极(56) 。 栅极线形成在绝缘基板上并且包括栅电极(26)。 有源层叠加在栅电极上。 第一和第二数据线与栅极线绝缘并与栅极线相交。 第一和第二漏电极分别从第一和第二数据线分支并叠加在有源层上。 源电极设置在第一和第二漏电极之间并形成在栅电极上。 源电极的宽度大于栅电极的宽度。
    • 9. 发明公开
    • 박막 트랜지스터 표시판 및 그 제조 방법
    • 薄膜晶体管阵列及其制造方法
    • KR1020080029279A
    • 2008-04-03
    • KR1020060095109
    • 2006-09-28
    • 삼성전자주식회사
    • 배주한황태형
    • H01L29/786G02F1/133G02F1/136
    • H01L51/0516H01L51/0003
    • A thin film transistor array panel and a manufacturing method thereof are provided to simplify a manufacturing process by reducing the number of masks. A gate line is formed on a substrate(10). An insulating material is coated on the gate line of the substrate. A mold having a predetermined pattern comes in contact with the insulating material. The mold is removed from the insulating material to form a bank(22) having an opening(24). The opening is set with a liquid material. A plurality of protrusions(26) are formed on a surface of the bank. The mold includes a first pattern forming part for forming a first pattern and a second pattern part for forming the protrusions at a periphery of the first pattern.
    • 提供薄膜晶体管阵列面板及其制造方法,以通过减少掩模的数量来简化制造过程。 在衬底(10)上形成栅极线。 绝缘材料涂覆在基板的栅极线上。 具有预定图案的模具与绝缘材料接触。 将模具从绝缘材料上移除以形成具有开口(24)的堤岸(22)。 开口设有液体材料。 多个突起(26)形成在堤岸的表面上。 模具包括用于形成第一图案的第一图案形成部分和用于在第一图案的周边形成突起的第二图案部分。
    • 10. 发明公开
    • 표시 장치의 제조 방법
    • 制造显示装置的方法
    • KR1020080068348A
    • 2008-07-23
    • KR1020070006000
    • 2007-01-19
    • 삼성전자주식회사
    • 황태형노남석
    • G02F1/167G02F1/1333
    • G02F1/167G02F1/1362G02F1/136227G09G3/344H01L27/124
    • A method for manufacturing an LCD(Liquid Crystal Display) is provided to improve the electrical characteristics and reliability of a flexible display device by preventing multilayered thin films from being misaligned according to the retraction of an existing plastic substrate. A sacrifice pattern is formed on an auxiliary substrate. In this case, a sacrifice layer is first formed on the auxiliary substrate. Then the peripheral area of the auxiliary substrate is exposed through photolithography for the sacrifice layer. A reserve flexible substrate is formed on the auxiliary substrate and the sacrifice pattern. A certain thin film structure is formed on the reserve flexible substrate. A passivation film is formed on the thin film structure. Holes to expose the sacrifice pattern are formed at the reserve flexible substrate. The sacrifice pattern is etched through the exposed holes. The passivation film is removed. The reserve flexible substrate is separated from the auxiliary substrate.
    • 提供了一种用于制造LCD(液晶显示器)的方法,以通过根据现有塑料基板的缩回防止多层薄膜不对准来改善柔性显示装置的电特性和可靠性。 在辅助基板上形成牺牲图案。 在这种情况下,首先在辅助基板上形成牺牲层。 然后通过光刻曝光辅助基板的外围区域作为牺牲层。 在辅助基板和牺牲图案上形成备用柔性基板。 在储备柔性基板上形成一定的薄膜结构。 在薄膜结构上形成钝化膜。 在保留柔性基板上形成露出牺牲图案的孔。 牺牲图案通过暴露的孔蚀刻。 去除钝化膜。 备用柔性基板与辅助基板分离。