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1. 发明公开

KR1020100046619A 질화물 반도체 발광 소자 및 이의 제조 방법 无效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：KR1020100046619A
公开(公告)日：2010-05-07
申请号：KR1020080105538
申请日：2008-10-27
申请人： 삼성전자주식회사
发明人： 김선운 , 한재호
IPC分类号： H01L33/20
摘要： PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve chip appearance yield in a chip separating process by locally separating a sapphire substrate and a light emitting structure before separating a chip. CONSTITUTION: A light emitting structure(105) includes an n type nitride semiconductor layer(105a), an active layer, and a p type nitride semiconductor layer. The n type nitride semiconductor layer, the active layer, and the p type nitride semiconductor layer are successively stacked on the substrate for growth. The light emitting structure and the substrate for growth are separated along a girth of the light emitting structure. A concavo-convex part is formed on a substrate direction surface(50') of the girth of the light emitting structure separated from the substrate for growth. The concavo-convex part offers the surface roughness.
摘要翻译：目的：提供氮化物半导体发光器件及其制造方法，以通过在分离芯片之前局部分离蓝宝石衬底和发光结构来提高芯片分离工艺中的芯片外观产率。构成：发光结构（105）包括n型氮化物半导体层（105a），有源层和p型氮化物半导体层。 n型氮化物半导体层，有源层和p型氮化物半导体层依次堆叠在用于生长的衬底上。发光结构和用于生长的衬底沿着发光结构的周长分开。在与用于生长的基板分离的发光结构的周长的基板方向表面（50'）上形成凹凸部。凹凸部分提供表面粗糙度。

2. 发明公开

KR1020100005851A 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법 有权
标题翻译：包含未焊基板的半导体发光器件及其制造方法
公开(公告)号：KR1020100005851A
公开(公告)日：2010-01-18
申请号：KR1020080065924
申请日：2008-07-08
申请人： 삼성전자주식회사
发明人： 김선운 , 김현경 , 백형기 , 한재호
IPC分类号： H01L33/20 , H01L33/32
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： PURPOSE: A nitride semiconductor light emitting diode with a pattern forming substrate and a manufacturing method thereof are provided to increase internal quantum efficiency by increasing the surface area of an active layer. CONSTITUTION: A nitride semiconductor light emitting diode with a pattern forming substrate comprises a substrate(71), a first conductive nitride semiconductor layer, an active layer, and a second conductive nitride semiconductor layer. A pattern with convex parts is formed on one surface of a substrate. In a pattern, the separation distance between the first convex part and the adjacent convex part among the convex parts and the separation distance between the second convex part and the adjacent convex part among the convex parts are different.
摘要翻译：目的：提供具有图案形成基板的氮化物半导体发光二极管及其制造方法，以通过增加有源层的表面积来提高内部量子效率。构成：具有图案形成衬底的氮化物半导体发光二极管包括衬底（71），第一导电氮化物半导体层，有源层和第二导电氮化物半导体层。在基板的一个表面上形成具有凸部的图案。在图案中，凸部之间的第一凸部与相邻凸部之间的分离距离与凸部之间的第二凸部与相邻凸部之间的分离距离不同。

3. 发明授权

KR101389348B1 질화갈륨계 반도체 발광소자 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：KR101389348B1
公开(公告)日：2014-04-30
申请号：KR1020070125109
申请日：2007-12-04
申请人： 삼성전자주식회사
发明人： 이동주 , 김용천 , 심현욱 , 김동준 , 김선운 , 이동율
IPC分类号： H01L33/04
摘要： 본 발명에서는 발광효율이 향상되고, 전기적 특성이 개선되어 신뢰성 높은 GaN계 반도체 발광소자가 제안된다. 본 발명의 GaN계 반도체 발광소자는 기판, n형 질화물 반도체층, 활성층, 및 p형 질화물 반도체층이 순차적층된 질화갈륨계 반도체 발광소자이다. n형 질화물 반도체층 상에는, 서로 다른 에너지 밴드 갭을 갖는 물질이 교대로 다수회 반복 적층되어 이루어진 제1초격자층이 형성되고, 제1초격자층 및 활성층 사이에는, 제1초격자층 및 활성층 각각의 에너지 밴드갭 사이의 에너지 밴드갭을 갖는 제1중간층이 형성된다.
초격자층, 에너지 밴드, 질화갈륨

4. 发明公开

KR1020100067503A 질화물 반도체 발광 소자 및 그 제조 방법 无效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：KR1020100067503A
公开(公告)日：2010-06-21
申请号：KR1020080126086
申请日：2008-12-11
申请人： 삼성전자주식회사
发明人： 김선운 , 김현경 , 한재호
IPC分类号： H01L33/36 , H01L33/42
摘要： PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to enhance a light efficiency of the nitride semiconductor light emitting device with enhancing a current spreading effect by inserting a metal layer of a mesh structure between a transparent conductivity oxide layers. CONSTITUTION: A light emitting structure includes an n-type nitride semiconductor layer(103), an active layer(105) and a p-type nitride semiconductor layer(107) on a substrate with successively forming. A first transparent conductivity oxide layer(109a) is formed on the p-type nitride semiconductor layer. A metal layer(119) of a mesh structure is formed on the first transparent conductivity oxide layer. The second transparent conductivity oxide layer(109b) is formed on the metal layer. The first transparent conductivity oxide layer is grown up by the electronic beam evaporation.
摘要翻译：目的：提供氮化物半导体发光器件及其制造方法，以通过在透明导电氧化物层之间插入网状结构的金属层来增强氮化物半导体发光器件的光效率，从而提高电流扩散效果。构成：发光结构在基板上依次形成n型氮化物半导体层（103），有源层（105）和p型氮化物半导体层（107）。在p型氮化物半导体层上形成第一透明导电氧化物层（109a）。在第一透明导电氧化物层上形成网状结构的金属层（119）。第二透明导电氧化物层（109b）形成在金属层上。第一透明导电氧化物层通过电子束蒸发而长大。

5. 发明公开

KR1020100052134A 반도체 발광소자 无效
标题翻译：半导体发光器件
公开(公告)号：KR1020100052134A
公开(公告)日：2010-05-19
申请号：KR1020080111027
申请日：2008-11-10
申请人： 삼성전자주식회사
发明人： 김선운 , 김용천
IPC分类号： H01L33/26
摘要： PURPOSE: A semiconductor light emitting device is provided to improve the interfacial property between a zinc oxide-based clad layer and a nitride-based active layer by interposing an interface layer between the zinc oxide-based clad layer and the nitride-based active layer. CONSTITUTION: An n-type zinc oxide-based clad layer(110) is formed on a substrate(100). A nitride-based active layer(120) is formed on the n-type zinc oxide-based clad layer. A p-type zinc oxide-based clad layer(130) is formed on the nitride-based active layer. A buffer layer is interposed between the substrate and the n-type zinc oxide-based clad layer. The buffer layer is based on a nitride layer or an oxide layer. An interface layer is interposed between the zinc oxide-based clad layer and the nitride-based active layer.
摘要翻译：目的：提供一种半导体发光器件，通过在氧化锌基覆盖层和氮化物基活性层之间插入界面层来改善氧化锌基覆盖层和氮化物基活性层之间的界面特性。构成：在基板（100）上形成n型氧化锌基覆盖层（110）。在n型氧化锌基覆层上形成氮化物系活性层（120）。在氮化物基活性层上形成p型氧化锌基覆盖层（130）。在衬底和n型氧化锌基覆层之间插入缓冲层。缓冲层基于氮化物层或氧化物层。界面层介于氧化锌基覆盖层和氮化物基活性层之间。

6. 发明授权

KR101533296B1 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법 有权
标题翻译：包含不均匀衬底的半导体发光器件及其制造方法
公开(公告)号：KR101533296B1
公开(公告)日：2015-07-02
申请号：KR1020080065924
申请日：2008-07-08
申请人： 삼성전자주식회사
发明人： 김선운 , 김현경 , 백형기 , 한재호
IPC分类号： H01L33/20 , H01L33/32
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： 본발명은패턴형성기판을구비한반도체발광소자및 그제조방법에관한것으로, 패턴형성기판을구비한질화물반도체발광소자는, 기판, 제1 도전형질화물반도체층, 활성층및 제2 도전형질화물반도체층을구비한발광소자에있어서, 상기기판은일표면상에복수개의볼록부를갖는패턴이형성되고, 상기패턴은상기복수개의볼록부중 어느하나의제1 볼록부와그 인접한볼록부간이격거리가상기복수개의볼록부중 어느하나의제2 볼록부와그 인접한볼록부간이격거리와서로다르게형성된다.

7. 发明公开

KR1020090060784A 질화갈륨계 발광소자 有权
标题翻译：基于硝酸钠的发光二极管
公开(公告)号：KR1020090060784A
公开(公告)日：2009-06-15
申请号：KR1020070127719
申请日：2007-12-10
申请人： 삼성전자주식회사
发明人： 김제원 , 김용천 , 김선운 , 채승완 , 전충배
IPC分类号： H01L33/24 , H01L33/22
摘要： A GaN based light emitting device is provided to increase dimensions of an active layer per unit dimension by growing an active layer on an increased surface of a semiconductor layer having a rough surface. A first conductive type bottom GaN based semiconductor layer(13a) is formed on a sapphire substrate(11) in which a buffer layer(12) is formed. A MgN based compound semiconductor layer(14) is formed on the first conductive type bottom GaN based semiconductor layer. A first conductive type top GaN based semiconductor layer(13b) is formed on the MgN based compound semiconductor layer. An active layer(15) is formed on the first conductive type top GaN based semiconductor layer. A second conductive type GaN based semiconductor layer(16) is formed on the active layer.
摘要翻译：提供GaN基发光器件，通过在具有粗糙表面的半导体层的增加的表面上生长活性层来增加每单位尺寸的有源层的尺寸。在形成有缓冲层（12）的蓝宝石衬底（11）上形成第一导电型底部GaN基半导体层（13a）。在第一导电型底GaN基半导体层上形成MgN基化合物半导体层（14）。在MgN基化合物半导体层上形成第一导电型顶部GaN基半导体层（13b）。在第一导电型顶GaN基半导体层上形成有源层（15）。在有源层上形成第二导电型GaN基半导体层（16）。

8. 发明公开

KR1020090058364A 질화갈륨계 반도체 발광소자 有权
标题翻译：基于GAN的半导体发光器件
公开(公告)号：KR1020090058364A
公开(公告)日：2009-06-09
申请号：KR1020070125109
申请日：2007-12-04
申请人： 삼성전자주식회사
发明人： 이동주 , 김용천 , 심현욱 , 김동준 , 김선운 , 이동율
IPC分类号： H01L33/04
摘要： A gallium nitride based semiconductor light emitting device is provided to suppress the impurity spreading to the active layer and relax the stress due to the super lattice layer by forming a first intermediate layer between the super lattice layer and active layer. A gallium nitride based semiconductor light emitting device comprises a substrate(110), an n-type nitride semiconductor layer(130), an active layer(150), and a p-type nitride semiconductor layer(170). A first super lattice layer(140) is formed on the n-type nitride semiconductor layer. The first super lattice layer is comprised while the material having the different energy band gap repeatedly laminated with plural times. A first intermediate layer(180) is formed between the first super lattice layer and active layer. The first intermediate layer has the energy band gap between the first superlattice layer and the active layer and each energy band gap. The buffer layer(120) including the AlN/GaN is formed between substrate and n-type nitride semiconductor layer.
摘要翻译：提供了一种氮化镓基半导体发光器件，以通过在超晶格层和有源层之间形成第一中间层来抑制杂质扩散到有源层并且缓和由于超晶格层引起的应力。氮化镓基半导体发光器件包括衬底（110），n型氮化物半导体层（130），有源层（150）和p型氮化物半导体层（170）。在n型氮化物半导体层上形成第一超晶格层（140）。包含第一超晶格层，而具有不同能带间隙的材料重复层叠多次。在第一超晶格层和有源层之间形成第一中间层（180）。第一中间层具有第一超晶格层和有源层之间的能带隙以及每个能带隙。在衬底和n型氮化物半导体层之间形成包括AlN / GaN的缓冲层（120）。

9. 发明授权

KR101349604B1 질화갈륨계 발광소자 有权
标题翻译：基于硝酸钠的发光二极管
公开(公告)号：KR101349604B1
公开(公告)日：2014-01-16
申请号：KR1020070127719
申请日：2007-12-10
申请人： 삼성전자주식회사
发明人： 김제원 , 김용천 , 김선운 , 채승완 , 전충배
IPC分类号： H01L33/24 , H01L33/22
摘要： 본 발명은, 기판과, 상기 기판 상에 형성된 제1 도전형 하부 질화갈륨계 반도체층과, 상기 제1 도전형 하부 질화갈륨계 반도체 상에 형성된 MgN계 화합물 반도체층과, 상기 MgN계 화합물 반도체층 상에 형성된 제1 도전형 상부 질화갈륨계 반도체층과, 상기 제1 도전형 상부 질화갈륨계 반도체층 상에 형성된 활성층과, 상기 활성층 상에 형성된 제2 도전형 질화갈륨계 반도체층을 포함하는 질화갈륨계 반도체 발광소자를 제공한다.
MgN, 질화갈륨(GaN), 발광소자(light emitting diode)

10. 发明公开

KR1020090090114A 투명 전극을 갖는 발광 다이오드 및 그 제조 방법 无效
标题翻译：具有透明导电电极的发光二极管及其制造方法
公开(公告)号：KR1020090090114A
公开(公告)日：2009-08-25
申请号：KR1020080015395
申请日：2008-02-20
申请人： 삼성전자주식회사
发明人： 황석민 , 김선운 , 이동율 , 한재호
IPC分类号： H01L33/42 , H01L33/38 , H01L33/06
摘要： A light emitting diode with a transparent conductive electrode and a method of manufacturing the same are provided to make a current distributed into an active layer by flowing the current into a non-ohmic and ohmic transparent. A first cladding layer is formed with a first conductive semiconductor material successively formed on a substrate(110). An active layer(140) is the multi-quantum well structure, and a second clad layer and transparent electrode layer are formed with the second conductive semiconductor material. The transparent electrode layer(160) comprises the non-ohmic transparent area(161) and ohmic transparent area(162). The first electrode is formed one of the transparent electrode layer, and the second electrode is formed in an exposure zone of the first cladding layer.
摘要翻译：提供具有透明导电电极的发光二极管及其制造方法，以通过使电流流入非欧姆和欧姆透明来分布到有源层中的电流。第一覆层形成有依次形成在基板（110）上的第一导电半导体材料。活性层（140）是多量子阱结构，第二覆盖层和透明电极层与第二导电半导体材料形成。透明电极层（160）包括非欧姆透明区域（161）和欧姆透明区域（162）。第一电极形成为透明电极层之一，第二电极形成在第一包层的曝光区域中。

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