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    • 1. 发明公开
    • 표시 장치 및 그 제조 방법
    • 显示装置及其制造方法
    • KR1020090055357A
    • 2009-06-02
    • KR1020070122239
    • 2007-11-28
    • 삼성전자주식회사
    • 전우석김장수이영욱박정인이희국김시열김진석윤재형김기원강수형
    • G02F1/1335G02F1/136
    • G02F1/13439G02F1/133514
    • A display device and a manufacturing method thereof are provided to suppress generation of short and LC shortage faults by finely forming a conductive pattern such as a pixel electrode on a color filter. Color filters(175) are respectively formed in each of plural pixel areas. A conductive film is formed on the color filter. A pixel electrode(180) is formed by separating the conductive film in each pixel area through a photolithography process. Valleys(176) are formed between the neighboring color filters as having different colors in a boundary between the pixel areas. Negative photosensitive material is applied onto the conductive film. By using a mask, the negative photosensitive material is exposed to light. By developing the exposed negative photosensitive material, a photosensitive film pattern is formed.
    • 提供一种显示装置及其制造方法,通过在滤色器上精细地形成诸如像素电极的导电图案来抑制短路和短路故障的产生。 彩色滤光片(175)分别形成在多个像素区域中的每一个中。 导电膜形成在滤色器上。 通过光刻工艺在每个像素区域中分离导电膜形成像素电极(180)。 在相邻的滤色器之间形成有在像素区域之间的边界中具有不同颜色的谷(176)。 将负感光材料施加到导电膜上。 通过使用掩模,负性感光材料曝光。 通过显影曝光的负感光材料,形成感光膜图案。
    • 2. 发明公开
    • 표시 장치
    • 显示设备
    • KR1020080091544A
    • 2008-10-14
    • KR1020070034512
    • 2007-04-09
    • 삼성전자주식회사
    • 신경주김장수김시열강수형
    • G02F1/1335G02F1/1343
    • G02F1/136209G02F1/133512G02F1/133514G02F1/134309G02F1/136286
    • A display device is provided to prevent the light leakage generated at a boundary portion between color filters and increase the aperture ratio, by forming a light-blocking pattern correspondingly to a boundary portion between adjacent pixel electrodes. A display substrate(200) includes a thin film transistor layer(210), a color filter layer(220) formed on the thin film transistor layer, pixel electrodes(230) formed on the color filter layer correspondingly to respective pixels, and first light-blocking patterns(240) formed within the thin film transistor layer. Each of the first light-blocking patterns is disposed at a boundary portion between adjacent pixel electrodes. A counterpart substrate(300) includes a black matrix(320) partially formed correspondingly to boundary portions between the pixel electrodes, and a common electrode(330) facing the pixel electrodes. A liquid crystal layer(400) is disposed between the display substrate and the counterpart substrate. A portion of the black matrix corresponding to the first light-blocking pattern is opened.
    • 通过形成与相邻的像素电极之间的边界部分相对应的遮光图案,来提供显示装置,以防止在滤色器之间的边界部分处产生的光泄漏并增加开口率。 显示基板(200)包括薄膜晶体管层(210),形成在薄膜晶体管层上的滤色器层(220),与各像素对应地形成在滤色器层上的像素电极(230)和第一光 形成在薄膜晶体管层内的阻挡图案(240)。 每个第一遮光图案设置在相邻像素电极之间的边界部分。 对应基板(300)包括对应于像素电极之间的边界部分部分地形成的黑矩阵(320)和面对像素电极的公共电极(330)。 液晶层(400)设置在显示基板和对置基板之间。 对应于第一遮光图案的黑色矩阵的一部分被打开。
    • 3. 发明公开
    • 박막 트랜지스터 표시판 및 그 제조 방법
    • 薄膜晶体管阵列及其制造方法
    • KR1020060112042A
    • 2006-10-31
    • KR1020050034411
    • 2005-04-26
    • 삼성전자주식회사
    • 강수형
    • G02F1/1335
    • G02F1/134309G02F1/133512G02F1/133514G02F2201/123
    • A thin film transistor substrate and a method for manufacturing the same are provided to block the electric field generated between pixel electrodes, thereby preventing crosstalk and the leakage of light, by disposing a light shielding member between the pixel electrodes. Gate lines, data lines, and thin film transistors are formed on a substrate(110). A plurality of color filters(230) are formed over the gate lines, the data lines, and the thin film transistors. A first passivation layer(180q) is formed on the color filters, and has a trench(188) for exposing the color filters. Pixel electrodes(190) are formed on the first passivation layer. A light shielding member(220) is formed in the trench of the first passivation layer.
    • 提供薄膜晶体管基板及其制造方法,以通过在像素电极之间设置遮光部件来阻挡像素电极之间产生的电场,从而防止串扰和光的泄漏。 栅极线,数据线和薄膜晶体管形成在衬底(110)上。 在栅极线,数据线和薄膜晶体管上形成多个滤色器(230)。 第一钝化层(180q)形成在滤色器上,并且具有用于曝光滤色器的沟槽(188)。 像素电极(190)形成在第一钝化层上。 在第一钝化层的沟槽中形成遮光构件(220)。
    • 4. 发明公开
    • 박막 트랜지스터 기판의 제조 방법
    • 薄膜晶体管基板的制作方法
    • KR1020080069439A
    • 2008-07-28
    • KR1020070007157
    • 2007-01-23
    • 삼성전자주식회사
    • 신경주김기원강수형이의구
    • G02F1/136G02F1/13
    • G02F1/136286G02F1/13458G02F1/136227H01L27/1214H01L27/1288H01L29/786
    • A method for manufacturing a TFT(Thin Film Transistor) substrate is provided to reduce the possibility that wires are disconnected, and decrease a manufacturing cost. Gate wires(22,26) are formed on an insulating substrate(10). A gate insulating layer(30), an active layer(40), and an ohmic contact layer(50) are formed on the resultant substrate including the gate wires. A photoresist pattern including a slop surface is formed on the ohmic contact layer by using slits of a mask(200).The photoresist pattern includes a first region(112) having a first slope and a second region(114) having a second slope. The second region is positioned below the first region. The second slope is gentler than the first slope. The ohmic contact layer and the active layer are selectively etched by using the photoresist pattern as an etching mask, thereby forming an ohmic contact layer pattern and an active layer pattern.
    • 提供一种制造TFT(薄膜晶体管)基板的方法,以减少断线的可能性,降低制造成本。 栅极线(22,26)形成在绝缘基板(10)上。 在包括栅极线的所得基板上形成栅极绝缘层(30),有源层(40)和欧姆接触层(50)。 通过使用掩模(200)的狭缝,在欧姆接触层上形成包括倾斜表面的光致抗蚀剂图案。光致抗蚀剂图案包括具有第一斜面的第一区域(112)和具有第二斜率的第二区域(114)。 第二区域位于第一区域下方。 第二斜坡比第一斜坡慢。 通过使用光致抗蚀剂图案作为蚀刻掩模来选择性地蚀刻欧姆接触层和有源层,从而形成欧姆接触层图案和有源层图案。