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2. 发明公开

KR1020140017443A 반도체 발광 소자 및 그 제조 방법 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：KR1020140017443A
公开(公告)日：2014-02-11
申请号：KR1020130090603
申请日：2013-07-31
申请人： 가부시끼가이샤 도시바
发明人： 기무라시게야 , 나고하지메 , 다치바나고이치 , 누노우에신야
IPC分类号： H01L33/06 , H01L33/04
CPC分类号： H01L33/32 , H01L33/0062 , H01L33/0075 , H01L33/06
摘要： A semiconductor light emitting element according to one embodiment of the present invention includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is provided in the [0001] direction of the first semiconductor layer. The light emitting layer includes a first well layer, a second well layer, and a first barrier layer. The In composition ratio of the first barrier layer is lower than the composition ratios of the first well layer and the second well layer. The first barrier layer includes a first part and a second part. The second part includes a first region and a second region. The first region includes a first In composition ratio which is higher than the In composition ratio of the first part. The second region is provided between the first region and the first well layer. The second region has a second In composition ratio which is lower than the first In composition ratio.
摘要翻译：根据本发明的一个实施例的半导体发光元件包括第一半导体层，第二半导体层和发光层。第二半导体层设置在第一半导体层的[0001]方向上。发光层包括第一阱层，第二阱层和第一势垒层。第一阻挡层的In组成比低于第一阱层和第二阱层的组成比。第一阻挡层包括第一部分和第二部分。第二部分包括第一区域和第二区域。第一区域包括高于第一部分的In组成比的第一In组成比。第二区域设置在第一区域和第一阱层之间。第二区域具有低于第一In组成比的第二In组成比。

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