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1. 发明公开

KR1020000011726A 기판 처리 방법 및 장치 无效
标题翻译：基板处理方法和装置
公开(公告)号：KR1020000011726A
公开(公告)日：2000-02-25
申请号：KR1019990028608
申请日：1999-07-15
申请人： 가부시키가이샤 어드밴티스트 , 미야모또 노부오 , 니와노 미찌오
发明人： 요시다하루오 , 엔도미찌아끼 , 니와노미찌오 , 미야모또노부오 , 마에다야스히로
IPC分类号： H01L21/30
摘要： PURPOSE: A substrate processing method and a device are provided to perform the immediate monitoring in the surface state of the semiconductor substrate on the production spot, to control the processing condition based on the result of the immediate monitor, or to detect the processing end point. CONSTITUTION: The substrate processing device contains; a device(30) to condensing the infra-red radiation or the near infra-red radiation upward the outer circumference part of a processing substrate(12), and to send the infra-red radiation or the near infra-red radiation to the processing substrate(12); a device(42 to lead multi-reflections inside the processing substrate(12), and to detect the infra-red radiation or the near infra-red radiation emitted form the processing substrate(12); a device(60) to analyze the detected infra-red radiation or the near infra-red radiation; a device to immediately monitor the surface state of the processing substrate(12); devices(52,54) to control the substrate processing device based on the monitored substrate surface of the processing substrate(12).
摘要翻译：目的：提供基板处理方法和装置，以在生产现场对半导体基板的表面状态进行立即监视，基于立即监视的结果来控制处理条件，或者检测处理终点。构成：基板处理装置包含; 用于将红外辐射或近红外辐射聚集在处理基板（12）的外周部分上方的装置（30），并将红外辐射或近红外辐射发射到处理衬底（12）; 一个装置（42），用于引导处理衬底（12）内部的多重反射，并检测从处理衬底（12）发出的红外辐射或近红外辐射;一个装置（60）红外辐射或近红外辐射;立即监测处理基板（12）的表面状态的装置;基于被监测的处理基板的基板表面来控制基板处理装置的装置（52,54）（12）。

2. 发明公开

KR1019990088623A 표면상태측정방법및장치 无效
标题翻译：表面状态监测方法和装置
公开(公告)号：KR1019990088623A
公开(公告)日：1999-12-27
申请号：KR1019990019365
申请日：1999-05-28
申请人： 가부시키가이샤 어드밴티스트 , 미야모또 노부오 , 니와노 미찌오
发明人： 요시다하루오 , 엔도미찌아끼 , 니와노미찌오 , 미야모또노부오 , 마에다야스히로
IPC分类号： G01N21/88
CPC分类号： G01N21/94 , G01J3/02 , G01J3/0216 , G01J3/108 , G01J3/45 , G01N21/552 , G01N21/9501 , G01N21/9503 , G01N21/9505 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： 본발명은반도체기판등의표면상태를측정하는표면상태측정방법및 장치에관한것으로, 적외선분광법에따라반도체기판의표면상태를제조현장에서인사이츄측정(in-situ monitoring)할수 있는표면상태측정방법및 장치를제공한다. 적외광원(20)으로부터방사된적외선을, 피측정기판(12)의외주부분에집광하여피측정기판(12) 내로도입하는적외선집광수단(30)과, 적외선집광수단(30)에의해집광되는적외선의피측정기판(12)에의입사각도를소정치로고정하거나또는가변제어하는입사각도제어수단(80)과, 피측정기판(12) 내에서다중반사한후에피측정기판(12)으로부터출사하는적외선을집광하는적외선집광수단(40)과, 적외선집광수단(40)에의해집광된적외선을검출하는적외선검출수단(50)과, 적외선검출수단(50)에의해검출된적외선을분석하고, 피측정기판의표면에부착한오염물을측정하는적외선분석수단(60)을구비한다.

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