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51. 发明授权

KR101400902B1 유기 태양전지 및 그 제조방법 有权
标题翻译：有机太阳能电池及其制造方法
公开(公告)号：KR101400902B1
公开(公告)日：2014-05-30
申请号：KR1020120132299
申请日：2012-11-21
申请人： 한국기계연구원
发明人： 김영국 , 백연경 , 안시현 , 최규채
IPC分类号： C09K11/06 , H01L51/42 , H01L51/48
CPC分类号： Y02E10/549
摘要： The present invention relates to an organic solar cell and a manufacturing method of the same, and more specifically, to: a solar cell which includes a quantum dot in which organic ligand with thiophene is substituted, an electron donor, and an electron carrier in a photoactive layer of an organic solar cell; and a manufacturing method of the same. The present invention provides the organic solar cell which comprises: a first electrode including a substrate, and a transparent conductive layer located on the substrate; a hole injection layer located on the first electrode; the photoactive layer located on the hole injection layer, and including the electron donor, the electron carrier, and the quantum dot wherein the surface is processed with the organic ligand denoted by chemical formula 1; and a second electrode located on the photoactive layer.
摘要翻译：有机太阳能电池及其制造方法技术领域本发明涉及一种有机太阳能电池及其制造方法，更具体地涉及：包含其中有噻吩被取代有机配体的量子点，电子给体和电子载体的太阳能电池有机太阳能电池的光敏层; 及其制造方法。本发明提供了一种有机太阳能电池，其包括：第一电极，其包括基板和位于所述基板上的透明导电层; 位于所述第一电极上的空穴注入层; 位于空穴注入层上的光敏层，并且包括电子给体，电子载体和量子点，其中表面用化学式1表示的有机配体进行处理; 以及位于光敏层上的第二电极。

52. 发明公开

KR1020130043442A 에어로졸 분사를 이용한 양자점 및 무기물 보호층을 포함하는 복합입자의 제조방법 失效
标题翻译：气溶胶喷雾剂对无机材料和无机保护层的复合颗粒的制备方法
公开(公告)号：KR1020130043442A
公开(公告)日：2013-04-30
申请号：KR1020110107573
申请日：2011-10-20
申请人： 한국기계연구원
发明人： 김영국 , 최철진 , 조영상 , 정국채
IPC分类号： C09K11/08 , C09K11/59 , C09K11/64 , C09K11/55
CPC分类号： Y02B20/181
摘要： PURPOSE: A manufacturing method of a complex particle having a quantum dot is provided to have a simple process and to prevent the oxidation of the quantum dot, thereby minimizing brightness loss of a composite particle. CONSTITUTION: A manufacturing method of a complex particle having a quantum dot comprises a step of dissolving an inorganic precursor in a first solvent and manufacturing a mother liquid to disperse quantum dots in the solution; a step of heating an electric furnace(4), spraying the mother liquid into a tube(3) through a spray nozzle(2), and converting droplet with the quantum dots to a composite particle in which the quantum dots are surround by the inorganic protection particle; and a step of collecting and drying the composite particle.
摘要翻译：目的：提供具有量子点的复合粒子的制造方法，以具有简单的工艺并防止量子点的氧化，从而使复合粒子的亮度损失最小化。构成：具有量子点的复合粒子的制造方法包括将无机前体溶解在第一溶剂中并制造母液以将量子点分散在溶液中的步骤; 加热电炉（4）的步骤，通过喷嘴（2）将母液喷射到管（3）中，并且将具有量子点的液滴转换成其中量子点由无机物包围的复合颗粒保护颗粒; 以及收集和干燥复合颗粒的步骤。

53. 发明授权

KR101212111B1 이붕소마그네슘 초전도 선재의 제조방법 및 이에 의하여 제조되는 이붕소마그네슘 초전도 선재 有权
标题翻译：由此制备MgB2超导导体和MgB2超导导体的制备方法
公开(公告)号：KR101212111B1
公开(公告)日：2012-12-13
申请号：KR1020100054803
申请日：2010-06-10
申请人： 한국기계연구원
发明人： 정국채 , 정태정 , 최규채 , 김태훈 , 임태수 , 김영국 , 안순태
IPC分类号： B22F3/18 , H01B13/00 , H01B12/04 , B21F19/00
CPC分类号： B21C23/002 , B21B2003/006 , B21C23/08 , H01L39/2487
摘要： 본발명은이붕소마그네슘초전도선재의제조방법및 이에의하여제조되는이붕소마그네슘초전도선재에관한것으로구체적으로는이붕소마그네슘원료분말을분말압연법으로압연하는것을특징으로하는이붕소마그네슘초전도선재의제조방법을제공함으로써, 금속피복재내부에충진되는초전도분말의밀도및 연결성향상을시킬수 있으며, 이를통하여초전도전류가흐를수 있는실질적인유효면적을크게하는효과가있다. 또한본 발명의제조방법은분말압연공정을통해최종선재의크기에가깝게공정을시작하여생산비용과생산속도면에서도유리한효과가있으며, 나아가자기장하 이붕소마그네슘초전도선재의자속고정특성향상을위해자속고정점역할을하는다양한도핑물질을첨가하는공정에서도본 발명을적용할수 있는장점이있다.

54. 发明授权

KR101090786B1 마그네슘 다이보라이드 초전도 선재 제조용 미세 붕소 전구분말 및 이를 자전 연소법을 이용하여 제조하는 방법 失效
标题翻译：镁超导线超细硼粉及其自蔓延高温合成法制备方法
公开(公告)号：KR101090786B1
公开(公告)日：2011-12-08
申请号：KR1020090040265
申请日：2009-05-08
申请人： 한국기계연구원
发明人： 김영국 , 정국채 , 정우현
IPC分类号： C01B35/02 , C04B35/58
摘要： 본발명에의한마그네슘다이보라이드초전도선재제조용미세붕소전구분말제조방법은, 붕소화합물과, 붕소의총중량대비 15중량% 이하의탄화수소화합물과, 붕소의총중량대비 300중량% 이하의희석제를포함하는원료분말을혼합하는재료혼합단계(S100)와, 원료분말이혼합된혼합분말과환원제를혼합하는환원제혼합단계(S200)와, 환원제가혼합된혼합분말을자전연소법으로반응시켜붕소및 탄화붕소혼합분말을형성하는자전연소반응단계(S300)와, 상기붕소및 탄화붕소를후처리하여미세한붕소전구분말을형성하는후처리단계(S400)로이루어진다. 이와같이구성되는본 발명에따르면, 저렴한비용으로미세붕소분말의제조가가능한이점이있다.

55. 发明公开

KR1020110028710A 양자점 형상 제어 방법 有权
标题翻译：一种用于形成量子点的控制方法
公开(公告)号：KR1020110028710A
公开(公告)日：2011-03-22
申请号：KR1020090086265
申请日：2009-09-14
申请人： 한국기계연구원
发明人： 김영국 , 정국채 , 최철진
IPC分类号： B82B3/00
CPC分类号： B01J19/00 , B82B3/0061 , B82Y30/00 , B82Y40/00 , C09K3/00 , C09K11/00
摘要： PURPOSE: A method for controlling the shape of quantum-dots is provided to control the length of nano particles by adding heavy metal oxides or metal salt in a raw material solution. CONSTITUTION: A first solution is synthesized by adding dopants into a solution containing metal salt or metal oxides, fatty acid, and a non-bonding solvent(S100). A second solution is synthesized by dissolving chalcogen into triotylphosphine or tributylphosphine(S200). The first solution is heated and maintained at temperature between 150 and 250 degrees Celsius(S300). The second solution is introduced into the first solution to obtain a mixed solution, and the mixed solution is cooled(S400). Quantum-dots are precipitated by adding a polar solvent into the mixed solution(S500). The quantum-dots are separated from the mixed solution(S600). The quantum-dots are dispersed in a non-polar solvent(S700).
摘要翻译：目的：提供一种控制量子点形状的方法，通过在原料溶液中加入重金属氧化物或金属盐来控制纳米颗粒的长度。构成：通过将掺杂剂掺入含有金属盐或金属氧化物，脂肪酸和非结合溶剂的溶液中来合成第一溶液（S100）。通过将硫属化合物溶解到三萜基膦或三丁基膦中合成第二种溶液（S200）。将第一溶液加热并保持在150至250摄氏度之间的温度（S300）。将第二溶液引入第一溶液中以获得混合溶液，并将混合溶液冷却（S400）。通过向混合溶液中加入极性溶剂来沉淀出量子点（S500）。量子点与混合溶液分离（S600）。量子点分散在非极性溶剂中（S700）。

56. 发明公开

KR1020100137134A 코팅막 제조장치 및 이를 이용한 코팅막 제조방법 有权
标题翻译：涂料膜制造设备和制造方法涂膜使用
公开(公告)号：KR1020100137134A
公开(公告)日：2010-12-30
申请号：KR1020090055407
申请日：2009-06-22
申请人： 한국기계연구원
发明人： 정국채 , 김영국 , 최철진
IPC分类号： H01L33/44
摘要： PURPOSE: A coating film manufacturing apparatus and a manufacturing method coating film of use the same are provided to minimize the crack of a coating film by uniformly removing volatile solvents included in the coating film. CONSTITUTION: A conveying unit(110) transfers a flexible board(102). A purification unit(120) eliminates the contaminant on the surface of the flexible board. The coating unit(130) forms a coating film on the surface of the flexible board through a slot-die-coating method. A heating unit(140) heats the flexible board in which the coating film is formed.
摘要翻译：目的：提供使用该涂膜的涂膜制造装置和制造方法涂膜，以通过均匀地除去涂膜中所含的挥发性溶剂来最小化涂膜的裂纹。构成：传送单元（110）传送柔性板（102）。净化单元（120）消除了柔性板表面上的污染物。涂布单元（130）通过槽模式涂布法在柔性板的表面上形成涂膜。加热单元（140）加热形成有涂膜的柔性基板。

57. 发明公开

KR1020100121211A 마그네슘 다이보라이드 초전도 선재 제조용 미세 붕소 전구분말 및 이를 자전 연소법을 이용하여 제조하는 방법 失效
标题翻译：一种用于磁性超导线的超磁波粉末及其自发传播高温合成的方法
公开(公告)号：KR1020100121211A
公开(公告)日：2010-11-17
申请号：KR1020090040265
申请日：2009-05-08
申请人： 한국기계연구원
发明人： 김영국 , 정국채 , 정우현
IPC分类号： C01B35/02 , C04B35/58
CPC分类号： C01B35/04 , C01P2004/64 , C01P2006/40
摘要： PURPOSE: An ultrafine boron powder for magnesium dibride superconductor wires and a method for manufacturing the same are provided to obtain carburization effects and to enable miniaturization of boron powder due to the application of self combustion. CONSTITUTION: A method for manufacturing an ultrafine boron powder for magnesium dibride superconductor wires comprises: a material mixing step(S100) for mixing material powder containing a boron compound, a hydrocarbon compound less than 15 weight% of the boron in comparison with total weight, and a diluting agent less than 300 weight% of the boron in comparison with total weight; a reducing agent mixing step(S200); a self combustion reaction step(S300); and a post processing step(S400).
摘要翻译：目的：提供一种用于镁二维超导体线的超细硼粉及其制造方法，以获得渗碳效果，并能够由于应用自燃而使硼粉末小型化。构成：用于制造镁二维超导体线的超细硼粉末的方法包括：用于混合含有硼化合物的材料粉末，小于15重量％的硼的烃化合物与总重量的材料混合步骤（S100）和与总重量相比小于300重量％的硼的稀释剂; 还原剂混合步骤（S200）; 自燃反应步骤（S300）; 和后处理步骤（S400）。

58. 发明公开

KR1020100102271A 자속고정점이 형성된 초전도 선재 및 이의 제조방법 失效
标题翻译：具有通孔密封位置的超级带和其形成方法
公开(公告)号：KR1020100102271A
公开(公告)日：2010-09-24
申请号：KR1020090020558
申请日：2009-03-11
申请人： 한국기계연구원
发明人： 정국채 , 김영국 , 정우현
IPC分类号： H01B12/00 , H01B13/00
CPC分类号： Y02E40/64
摘要： PURPOSE: A superconductive wire and a manufacturing method thereof are provided to improve productivity by continuously forming a flux pinning site on a metal substrate. CONSTITUTION: A buffer layer(112) is formed on one side of a metal substrate(110). The buffer layer is comprised of a seed layer, a diffusion preventing layer, and a surface layer. The seed layer is contacted with the metal substrate. The diffusion prevention layer prevents the diffusion of the metal element from the metal substrate. The surface layer has a superconductive layer(140) and an affinity. A flux pining site(120) is formed with a pillar shape to cross the metal substrate and the buffer layer. The super conductive layer is formed on the outer side of the flux pinning site.
摘要翻译：目的：提供超导线及其制造方法，以通过在金属基板上连续地形成焊剂钉扎位置来提高生产率。构成：在金属基板（110）的一侧形成缓冲层（112）。缓冲层由种子层，扩散防止层和表面层构成。种子层与金属基底接触。扩散防止层防止金属元件从金属基板的扩散。表面层具有超导层（140）和亲和力。焊剂点处部位（120）形成为具有与金属基板和缓冲层交叉的柱状。超导电层形成在焊剂钉扎部位的外侧。

59. 发明授权

KR100891154B1 나노점 형성과 전구체 코팅 및 하소 열처리의 연속공정에의한 초전도 선재의 제조방법 失效
标题翻译：使用连续NANO-DOTS形成和计算制造超级磁带的方法
公开(公告)号：KR100891154B1
公开(公告)日：2009-04-06
申请号：KR1020080000857
申请日：2008-01-03
申请人： 한국기계연구원
发明人： 유재무 , 정국채 , 김영국
IPC分类号： H01B12/00 , B82Y40/00
CPC分类号： H01L39/2483 , H01L39/2425
摘要： A manufacturing method of a superconducting wire is provided to induce a columnar defect inside superconducting material through a nano-dot formation by an electro spinning method and a deposition of a superconducting layer by an organic chemical deposition method. A buffer layer(200) is formed on a metal substrate(100). A precursor solution for a nano-dot formation is coated on the buffer layer of the metal substrate. A calcination is performed about the precursor solution. A nano-dot(300) is formed on the buffer layer of the metal substrate. A coating and a calcination process using a superconducting precursor solution is performed about the buffer layer having the nano-dot. A superconducting precursor thin film is manufactured. The calcination is performed about the superconducting precursor thin film. The superconducting precursor thin film is converted into a superconducting thin film(400a). A columnar defect(500) is induced inside the superconducting thin film.
摘要翻译：提供超导线的制造方法，通过电纺法的纳点形成和通过有机化学沉积法沉积超导层来引起超导材料内的柱状缺陷。在金属基板（100）上形成缓冲层（200）。用于纳米点形成的前体溶液涂覆在金属基底的缓冲层上。进行关于前体溶液的煅烧。在金属基板的缓冲层上形成纳米点（300）。围绕具有纳米点的缓冲层进行使用超导前体溶液的涂层和煅烧方法。制造超导前体薄膜。关于超导前体薄膜进行煅烧。超导前体薄膜转变为超导薄膜（400a）。在超导薄膜内诱发柱状缺陷（500）。

60. 发明公开

KR1020080062283A 고온 자전연소법에 의한 붕소 분말 제조 방법 失效
标题翻译：通过自发传播高温合成制造硼粉的方法
公开(公告)号：KR1020080062283A
公开(公告)日：2008-07-03
申请号：KR1020060137868
申请日：2006-12-29
申请人： 한국기계연구원
发明人： 유재무 , 고재웅 , 김영국 , 정국채
IPC分类号： C01B35/02 , C01B35/00
CPC分类号： C01B35/023 , C01B35/04 , C01P2006/40 , C04B35/58 , H01L39/24
摘要： A method for preparing a boron powder by a self-propagating high temperature synthesis process is provided to reduce the preparation costs by economically preparing a high purity fine boron powder having a particle size ranging from several tens of nanometers to several microns in which a magnesium diboride phase is remained using a self-reaction heat of the combustion reaction without additional supply of energy. A method for preparing a boron powder by a self-propagating high temperature synthesis process comprises the steps of: uniformly mixing a boric acid(H3BO3) powder with a magnesium(Mg) powder or a magnesium hydride(MgH2) powder in an inert atmosphere using a ball mill; molding the mixed powder into a cylindrical molded body; injecting the molded body into a self-propagating high temperature synthesis reactor and igniting the molded body, thereby proceeding a self-propagating high temperature synthesis reaction to prepare a boron powder and residues; and repeatedly performing acid treatment and rinsing of the prepared boron powder and residues and performing filtration and drying of the acid treated and rinsed boron powder and residues to remove impurities except the boron powder. The mixing step is performed by mixing the boric acid(H3BO3) powder with the magnesium(Mg) powder or the magnesium hydride(MgH2) powder at a mole ratio range of 1.0:1.0 to 3.0. Further, a condition in the self-propagating high temperature synthesis reactor is vacuum or Ar condition.
摘要翻译：提供了通过自蔓延高温合成方法制备硼粉的方法，通过经济地制备具有几十纳米至几微米的粒度的高纯度细硼粉，以降低制备成本，其中二硼化二硼在不增加能量的情况下，使用燃烧反应的自反应热保持相。通过自蔓延高温合成法制备硼粉的方法包括以下步骤：在惰性气氛下，使硼酸（H 3 BO 3）粉末与镁（Mg）粉末或氢化镁（MgH 2）粉末均匀混合，使用一个球磨机; 将混合粉末成型为圆筒形成型体; 将成型体注入自蔓延高温合成反应器中并点燃成型体，进行自蔓延高温合成反应，制备硼粉和残渣; 并重复进行酸处理和漂洗所制备的硼粉和残留物，并进行酸处理和漂洗的硼粉和残留物的过滤和干燥以除去硼粉末外的杂质。混合步骤是通过将硼酸（H 3 BO 3）粉末与镁（Mg）粉末或氢化镁（MgH 2）粉末的摩尔比范围为1.0:1.0至3.0混合来进行的。此外，自传播高温合成反应器中的条件是真空或Ar条件。

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