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41. 发明授权

KR100865179B1 기판 식각 장치 有权
标题翻译：蚀刻基板的装置
公开(公告)号：KR100865179B1
公开(公告)日：2008-10-23
申请号：KR1020070036266
申请日：2007-04-13
申请人： 송종호
发明人： 조호선
IPC分类号： H01L21/3063
摘要： 본 발명은 기판을 수직으로 기립시킨 상태에서 기판 양면에 식각액을 흘려서 기판을 식각하는 기판 식각 장치에 관한 것이며, 본 발명에 따른 기판 식각 장치는, 수직으로 기립된 기판 상측에서 기판 방향으로 식각액을 분사하는 식각액 분사수단과 상기 기판 측면과 일정간격 이격된 상태로 대향되며, 상기 식각액 분사수단에 의하여 분사된 식각액을 상기 기판 전면에 분산시켜 식각액막을 형성하는 식각액막 형성판을 포함한다.

42. 发明公开

KR1020080088949A 유리기판 에칭장치 无效
标题翻译：玻璃面板蚀刻单元
公开(公告)号：KR1020080088949A
公开(公告)日：2008-10-06
申请号：KR1020070031871
申请日：2007-03-30
申请人： 김용노
发明人： 김용노
IPC分类号： G02F1/13 , H01L21/3063
CPC分类号： H01L21/67075 , G02F1/1303 , H01L21/3063 , H01L21/67086
摘要： A glass substrate etching device is provided to etch a glass substrate to reduce its thickness and spray etchant in a state of filling the etchant within an etching bath, thereby achieving uniform etching over the whole glass substrate. A glass substrate etching device comprises the following. An etching bath(110) performs etching of a glass substrate for a flat panel display. An etchant supply unit(130) supplies etchant to the etching bath. An etchant spray unit(120) sprays the etchant onto the glass substrate. A wave source generating unit(140) makes the etchant, supplied to the etching bath, generate waves. The wave source generating unit includes a vibration motor(142), a vibration shaft and at least one or more vibration plates.
摘要翻译：提供了一种玻璃基板蚀刻装置，用于在填充蚀刻槽内的蚀刻剂的状态下蚀刻玻璃基板以减小其厚度并喷涂蚀刻剂，由此在整个玻璃基板上实现均匀蚀刻。玻璃基板蚀刻装置包括以下。蚀刻浴（110）进行用于平板显示器的玻璃基板的蚀刻。蚀刻剂供应单元（130）向蚀刻槽提供蚀刻剂。蚀刻剂喷射单元（120）将蚀刻剂喷射到玻璃基板上。波源产生单元（140）使得提供给蚀刻槽的蚀刻剂产生波。波源发生单元包括振动马达（142），振动轴和至少一个或多个振动板。

43. 发明公开

KR1020080081579A 반도체 소자의 소자 분리막 형성 방법 无效
标题翻译：在半导体器件中形成隔离膜的方法
公开(公告)号：KR1020080081579A
公开(公告)日：2008-09-10
申请号：KR1020070021773
申请日：2007-03-06
申请人： 에스케이하이닉스 주식회사
发明人： 조휘원 , 김석중 , 이정구
IPC分类号： H01L21/3063 , H01L21/76
CPC分类号： H01L21/76224 , H01L21/30604
摘要： A method for forming an isolation layer of a semiconductor device is provided to improve EFH(effective field oxide height) variation in a cell region without causing contamination of photoresist and a lifting-off phenomenon of a photoresist pattern by performing a wet etch process using an etch mask as a patterned sacrificial layer in a peripheral circuit region during a process for etching an isolation layer for controlling EFH in the cell region. A trench(112) is formed in an isolation region of a cell region and a peripheral circuit region in a semiconductor substrate(100). The trench is filled with an isolation layer(114). A sacrificial layer(116) and a photoresist pattern are sequentially formed on the isolation layer. By using the photoresist pattern as an etch mask, the sacrificial layer is patterned to remove the sacrificial layer in the cell region. The photoresist pattern is removed. The isolation layer in the cell region is etched by using the patterned sacrificial layer as an etch mask. A tunnel insulation layer(102a), an electron storage layer(104) and a hard mask(110) can be formed on the semiconductor substrate in an active region of the cell region.
摘要翻译：提供了一种用于形成半导体器件的隔离层的方法，以通过使用湿法蚀刻工艺来改善电池区域中的EFH（有效场氧化物高度）变化而不引起光致抗蚀剂的污染和光刻胶图案的脱落现象在用于蚀刻用于控制单元区域中的EFH的隔离层的工艺期间，在外围电路区域中的蚀刻掩模作为图案化的牺牲层。沟槽（112）形成在半导体衬底（100）中的单元区域和外围电路区域的隔离区域中。沟槽填充有隔离层（114）。牺牲层（116）和光致抗蚀剂图案依次形成在隔离层上。通过使用光致抗蚀剂图案作为蚀刻掩模，牺牲层被图案化以去除单元区域中的牺牲层。去除光致抗蚀剂图案。通过使用图案化的牺牲层作为蚀刻掩模来蚀刻单元区域中的隔离层。隧道绝缘层（102a），电子存储层（104）和硬掩模（110）可以在电池区域的有源区域中形成在半导体衬底上。

44. 发明公开

KR1020080056332A 습식처리장비의 약액 칭량장치 有权
标题翻译：在湿地站称重解决方案的设备
公开(公告)号：KR1020080056332A
公开(公告)日：2008-06-23
申请号：KR1020060129099
申请日：2006-12-18
申请人： 주식회사 케이씨
发明人： 이태우
IPC分类号： H01L21/302 , H01L21/3063
CPC分类号： H01L21/67086 , B05C11/1026
摘要： An apparatus for weighing chemicals of wet process equipment is provided to remarkably increase weighing precision by simply enabling a plurality of weighing processes. Chemicals for wet process are supplied to a bath(110) by a first line(210) wherein a wet treatment is performed on a substrate in the bath. A second line(230) is branched from the first line. A weighing member(240) receives and stores the chemicals transferred along the second line, installed in the second line. A switch valve part(220) switches and transfers the chemicals transferred along the first line to the bath or the weighing member. The switch valve part can include a first valve(221) installed in the rear part of the branch position of the first line and a second valve(222) installed in the front part of the weighing member of the second line. The first valve controls the transfer of the chemicals supplied to the bath. The second valve controls the transfer of the chemicals supplied to the weighing member.
摘要翻译：提供了一种用于称量湿式设备的化学品的设备，通过简单地实现多次称重过程来显着提高称重精度。用于湿法处理的化学品通过第一管线（210）供应到浴（110），其中在浴中对基底进行湿处理。第二行（230）从第一行分支。称重构件（240）容纳并存储安装在第二管线中的沿着第二管路传送的化学品。切换阀部件（220）将沿着第一管路传送的化学品切换并传送到浴缸或称重部件。切换阀部件可以包括安装在第一管线的分支位置的后部的第一阀（221）和安装在第二管线的称量部件的前部的第二阀（222）。第一个阀门控制供应给浴缸的化学品的转移。第二阀控制供给到称重构件的化学品的转移。

45. 发明公开

KR1020080049661A 반도체 장치의 제조 방법 无效
标题翻译：制造半导体器件的方法
公开(公告)号：KR1020080049661A
公开(公告)日：2008-06-04
申请号：KR1020070122745
申请日：2007-11-29
申请人： 세이코 엡슨 가부시키가이샤
发明人： 가네모토게이
IPC分类号： H01L21/20 , H01L21/3063
CPC分类号： H01L21/7624 , H01L21/02381 , H01L21/02532 , H01L21/30604 , H01L29/66772
摘要： A method for manufacturing a semiconductor device is provided to suppress bad influence on a first and second semiconductor layers by forming a buffer layer before forming a first semiconductor layer. An oxide layer is formed on a semiconductor substrate(1). A window section is formed by removing selectively the oxide layer. A substrate semiconductor layer(1a) is exposed within the window section. A first semiconductor layer(5) is formed to cover the substrate semiconductor layer. A second semiconductor layer(6) is formed to cover the first semiconductor layer. A supporter hole is formed by removing the second semiconductor layer and the first semiconductor layer. A supporter(12) is formed to cover an isolation region and to fill up the supporter hole. An end exposure surface is formed by etching the second semiconductor layer and the first semiconductor layer. The first semiconductor layer is removed. The second semiconductor layer is exposed by removing the supporter. A semiconductor device is formed on the second semiconductor layer.
摘要翻译：提供一种制造半导体器件的方法，通过在形成第一半导体层之前形成缓冲层来抑制对第一和第二半导体层的不良影响。在半导体基板（1）上形成氧化物层。通过选择性地去除氧化物层形成窗口部分。衬底半导体层（1a）在窗部内露出。形成第一半导体层（5）以覆盖基板半导体层。形成第二半导体层（6）以覆盖第一半导体层。通过去除第二半导体层和第一半导体层来形成支撑孔。支撑件（12）形成为覆盖隔离区域并填满支撑孔。通过蚀刻第二半导体层和第一半导体层来形成端部曝光表面。去除第一半导体层。通过去除支撑体来暴露第二半导体层。半导体器件形成在第二半导体层上。

46. 发明公开

KR1020080033865A 에칭액의 재생방법, 에칭방법 및 에칭장치 无效
标题翻译：蚀刻解决方案的再生方法，蚀刻方法和蚀刻系统
公开(公告)号：KR1020080033865A
公开(公告)日：2008-04-17
申请号：KR1020070102533
申请日：2007-10-11
申请人： 아프리시아 테크놀로지 가부시키가이샤
发明人： 이즈타노부히코 , 와타쓰하루루
IPC分类号： H01L21/3063
CPC分类号： C09K13/04
摘要： A regeneration method of etching solution, an etching method and an etching system are provided to eliminate silicon compounds contained in the etching solution by always using a filter with a filter element having high silicon removal rate. A silicon nitride film is etched with an etching solution comprising phosphoric acid aqueous solution within a treatment tank. The etching solution containing silicon compounds produced by the etching is extracted out of the treatment tank. The silicon compounds are removed from the extracted etching solution with a filter. When the etching solution is regenerated, multiple filters are connected to the piping path for the extracted etching solution by switching alternately in parallel or in series, and the extracted etching solution is supplied at least to one of filters with an filter element of high silicon removal rate of silicon compounds with already deposited silicon compounds, except the case of initial parallel connection of the multiple filters at the start up operation, thus silicon compounds are removed with high silicon removal rate of silicon compounds.
摘要翻译：提供蚀刻溶液的再生方法，蚀刻方法和蚀刻系统，以通过总是使用具有高硅去除率的滤光元件的滤光器来消除蚀刻溶液中所含的硅化合物。在处理槽内用含有磷酸水溶液的蚀刻溶液蚀刻氮化硅膜。将由蚀刻制备的含有硅化合物的蚀刻液从处理槽中提取出来。使用过滤器从提取的蚀刻溶液中除去硅化合物。当再生蚀刻溶液时，通过交替并行或串联切换将多个过滤器连接到用于提取的蚀刻溶液的管道，并且提取的蚀刻溶液至少提供给具有高硅去除的过滤元件的过滤器除了在启动操作时多个滤波器的初始并联连接的情况下，已经沉积的硅化合物的硅化合物的速率，因此硅化合物以硅化合物的硅去除速率被去除。

47. 发明公开

KR1020080026489A 기판처리장치 有权
标题翻译：基板加工设备
公开(公告)号：KR1020080026489A
公开(公告)日：2008-03-25
申请号：KR1020070091311
申请日：2007-09-10
申请人： 가부시키가이샤 스크린 홀딩스
发明人： 키요세히로미 , 코바야시테루우키
IPC分类号： H01L21/3063
CPC分类号： H01L21/31111 , H01L21/67086 , H01L21/67253
摘要： A substrate processing apparatus is provided to maintain constant concentration of siloxane contained in a phosphoric acid solution stored in an immersion bath with higher accuracy. A phosphoric acid solution stored in an immersion bath(10) is circulated through a circulation line(20). Substrates with a silicon oxide film and a silicon nitride film are immersed into the phosphoric acid solution in the immersion bath, to proceed a process of selectively etching the silicon nitride film. A recovery line(30) draws part of the phosphoric acid solution circulating through the circulation line, and collects and discharges siloxane with a recovery device(31) to recover the phosphoric acid solution. A controller(40) controls a flow rate regulating valve(33) on the basis of measurement results of an outlet concentration meter(24) and an inlet concentration meter(32), to regulate the flow rate of the phosphoric acid solution to be circulated to the immersion bath so that the concentration of siloxane contained in the phosphoric acid solution stored in the immersion bath should be constant.
摘要翻译：提供了一种基板处理装置，以更高精度保持储存在浸浴中的磷酸溶液中所含的硅氧烷的浓度恒定。储存在浸浴（10）中的磷酸溶液通过循环管线（20）循环。将具有氧化硅膜和氮化硅膜的衬底浸渍在浸渍浴中的磷酸溶液中，以进行选择性蚀刻氮化硅膜的工艺。回收管线（30）吸收通过循环管线循环的一部分磷酸溶液，并用回收装置（31）收集并排出硅氧烷以回收磷酸溶液。控制器（40）根据出口浓度计（24）和入口浓度计（32）的测量结果来控制流量调节阀（33），以调节要循环的磷酸溶液的流量浸入浴中，以使储存在浸浴中的磷酸溶液中含有的硅氧烷的浓度应该是恒定的。

48. 发明公开

KR1020080025585A 표시기판 제조 방법 및 이를 이용한 표시패널 제조 방법 有权
标题翻译：制作显示基板的方法和使用其制造显示面板的方法
公开(公告)号：KR1020080025585A
公开(公告)日：2008-03-21
申请号：KR1020060090257
申请日：2006-09-18
申请人： 삼성디스플레이 주식회사
发明人： 조우식 , 이윤석 , 우동원 , 손지현
IPC分类号： G02F1/1339 , G02F1/13 , H01L21/3063 , H01L21/308
CPC分类号： G02F1/13394 , G02F2001/134318 , G02F2001/136236
摘要： A method for manufacturing a display substrate and a method for manufacturing a display panel using the same are provided to minimize the number of masks required to form a color filter substrate by forming a common electrode and spacers using a single mask. A color filter layer(130) is formed on a base substrate(110), and a transparent electrode is formed on the upper part of the color filter layer. A photosensitive pattern is formed on the upper part of the transparent electrode. As patterning for the transparent electrode is carried out through an etching process which uses the photosensitive pattern as a mask, a common electrode(150) is formed. Spacers(160) is formed through the etching of the photosensitive pattern. An overcoat layer(140) is formed on an upper part of a black matrix(120) and the color filter layer to flatten the color filter layer.
摘要翻译：提供一种制造显示基板的方法和使用其的显示面板的制造方法，以通过使用单个掩模形成公共电极和间隔来最小化形成滤色器基板所需的掩模的数量。滤色器层（130）形成在基底（110）上，透明电极形成在滤色器层的上部。在透明电极的上部形成感光图案。通过使用感光图案作为掩模的蚀刻工艺进行透明电极的图案化，形成公共电极（150）。通过蚀刻感光图案形成间隔物（160）。在黑矩阵（120）的上部和滤色器层上形成覆盖层（140），以平坦化滤色器层。

49. 发明公开

KR1020080021790A ＳＩＭＯＸ 웨이퍼의 제조 방법 및 그 방법으로 제조된ＳＩＭＯＸ 웨이퍼 无效
标题翻译：通过这种方法制造SIMOX WAFER和SIMOX WAF的方法
公开(公告)号：KR1020080021790A
公开(公告)日：2008-03-07
申请号：KR1020087001259
申请日：2005-07-22
申请人： 가부시키가이샤 섬코
发明人： 다카하시,이사오 , 나카이,테츠야
IPC分类号： H01L21/02 , H01L27/12 , H01L21/3063
CPC分类号： H01L21/324 , H01L21/02041 , H01L21/67034 , H01L21/67051 , H01L21/67069
摘要： A SIMOX wafer manufacturing method includes a step of implanting oxygen ions into a silicon wafer; a step of cleaning the oxygen ion implanted silicon wafer; and a step of forming an embedded oxide film inside the silicon wafer by performing heat treatment to the cleaned silicon wafer. The method further includes a step of etching a SiO2 film formed on the silicon wafer surface by dipping the silicon wafer in a hydrofluoric acid solution, after the oxygen ions are implanted into the silicon wafer and prior to cleaning the silicon wafer. An etching rate of the hydrofluoric acid solution to the SiO2 film in the etching process is 150-3,000(Š/min). ® KIPO & WIPO 2008
摘要翻译： SIMOX晶片制造方法包括将氧离子注入到硅晶片中的步骤; 清洗氧离子注入硅晶片的步骤; 以及通过对经清洁的硅晶片进行热处理，在硅晶片内形成嵌入氧化膜的步骤。该方法还包括在将氧离子注入硅晶片之后并且在清洁硅晶片之前，通过将硅晶片浸入氢氟酸溶液中来蚀刻在硅晶片表面上形成的SiO 2膜的步骤。在蚀刻过程中，氢氟酸溶液对SiO 2膜的蚀刻速率为150-3,000（Š/ min）。 ®KIPO＆WIPO 2008

50. 发明授权

KR100806324B1 반도체 불량분석을 위한 웨이퍼 에칭 시스템 및 방법 有权
标题翻译：用于分析半导体传感器的渗透的系统和方法
公开(公告)号：KR100806324B1
公开(公告)日：2008-02-27
申请号：KR1020070001539
申请日：2007-01-05
申请人： (주)엠아이반도체
发明人： 신경욱
IPC分类号： H01L21/66 , H01L21/304 , H01L21/3063
摘要： A wafer etching system for analyzing a defect of a semiconductor is provided to enable a rapid and precise decapping process according to the characteristic of a soluble wafer layer and an insoluble wafer layer by removing the soluble wafer layer by a chemical wet etch method and by removing the insoluble wafer layer by a mechanical polishing method. A sample is fixed by a jig(20). A milling apparatus(40) exposes an interconnection connecting respective wafers by removing an epoxy layer and cuts the interconnection to individually separate each wafer. A chucking apparatus chucks and transfers each individually separated wafer. An etchant injecting apparatus(50) mixes at least one chemical material with diluent to generate etchant and injects the etchant into the epoxy layer of the sample and a wafer layer to perform a wet etch process. A cleaning apparatus cleans the etchant injected sample by using a cleaning solution. The jig can include a plate disposed on the sample, a heating part including a plurality of heat wires for receiving electricity and generating heat, and a temperature sensor for detecting the surface temperature of the jig. The heating part can heat the sample to a temperature at which a chemical reaction of the etchant is activated.
摘要翻译：提供了一种用于分析半导体缺陷的晶片蚀刻系统，通过化学湿法蚀刻方法去除可溶性晶片层，根据可溶性晶片层和不溶性晶片层的特性，实现快速精确的去贴图工艺，该不溶性晶片层通过机械抛光方法。样品通过夹具（20）固定。研磨装置（40）通过去除环氧树脂层来暴露连接相应晶片的互连，并切割互连以分开每个晶片。夹持装置夹持并传送每个单独分离的晶片。蚀刻剂注入装置（50）将至少一种化学材料与稀释剂混合以产生蚀刻剂并将蚀刻剂注入到样品的环氧树脂层和晶片层中以进行湿蚀刻工艺。清洁装置通过使用清洁溶液清洗蚀刻剂注入的样品。夹具可以包括设置在样品上的板，包括用于接收电和产生热量的多根热丝的加热部分，以及用于检测夹具表面温度的温度传感器。加热部件可以将样品加热到腐蚀剂的化学反应被激活的温度。

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