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    • 45. 发明公开
    • 반도체 제조용 석영유리 부재의 제조방법 및 그 방법에의해 제조된 부재
    • 用于制造半导体制造中使用的QUARTZ玻璃组件的方法和由该方法生产的组分
    • KR1020070102700A
    • 2007-10-19
    • KR1020077017871
    • 2006-01-18
    • 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지
    • 웨버주에겐컬스트율리히
    • C03C15/00C03C19/00
    • C03C15/00C03C19/00C03C2204/08Y10T428/24355
    • Quartz glass components for use in semiconductor manufacture are produced by mechanically machining the surface of a quartz glass blank so as to produce an initial average surface roughness Ra,0. The thus machined component surface is then cleaned in an etching solution. The invention relates to the optimisation of particle formation on such components, during the first intended use already. It is proposed to produce an initial average surface roughness Ra,0 of at least 0.2 Vm by mechanical machining, and to adjust etching intensity and duration so that an actual etching depth of at least 10 Vm is achieved. A quartz glass component produced by this process for use in semiconductor manufacture is characterised in that it comprises, before its first intended use, a surface produced by mechanical machining and etching having an etched structure with an average surface roughness Ra, 1 ranging from 0.6 Vm to 8 Vm, and in that a weight loss of less than 0.4 Vg/(mm2 x min) which is substantially constant in time is achieved when etching the component with a 10 % solution of hydrofluoric acid.
    • 用于半导体制造的石英玻璃组件通过机械加工石英玻璃坯料的表面来产生初始平均表面粗糙度Ra,0。 然后将这样加工的部件表面在蚀刻溶液中清洁。 本发明涉及在首次使用期间对这些组分上的颗粒形成的优化。 提出通过机械加工产生至少0.2Vm的初始平均表面粗糙度Ra,0,并且调整蚀刻强度和持续时间,使得实现至少10Vm的实际蚀刻深度。 通过该方法制造的用于半导体制造的石英玻璃组件的特征在于,其在其首次使用之前包括通过机械加工和蚀刻制造的表面,其具有平均表面粗糙度Ra,范围为0.6Vm的蚀刻结构 并且当用10%氢氟酸溶液蚀刻该组分时,实现了时间基本上恒定的小于0.4Vg /(mm 2 x min)的重量损失。
    • 50. 发明公开
    • 광학 부재용 석영 유리 블랭크, 그 제조 방법 및 이용 방법
    • 用于光学部件的QUARTZ玻璃棉,制造程序及其用途
    • KR1020030047753A
    • 2003-06-18
    • KR1020020076625
    • 2002-12-04
    • 신에쯔 세끼에이 가부시키가이샤헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지
    • 큔보도위빙브르노트로머마르틴오크스슈테판피셔게로홀스트울라
    • C03C4/00
    • C03B19/1469C03B19/1415C03B19/1453C03B2201/07C03B2201/21C03B2201/23C03C3/06C03C4/0071C03C4/0085C03C2201/21C03C2201/23C03C2203/40C03C2203/52C03C2203/54Y02P40/57
    • PURPOSE: A quartz glass blank for an optical component for transmission of ultraviolet radiation of a wavelength of 250 nm or shorter, a use of the quartz glass blank in microlithography in combination with ultraviolet radiation of a wavelength of 250 nm or shorter, and a procedure for manufacture of the quartz glass blank are provided. CONSTITUTION: In a quartz glass blank for an optical component for transmission of ultraviolet radiation with a wavelength of 250 nm or shorter, the quartz glass blank is characterized by a glass structure that is essentially free of oxygen defect sites, an H2-content in the range of 0.1x10¬16 molecules/cm¬3 to 4.0x10¬16 molecules/cm¬3, an OH-content in the range of 125 wt-ppm to 450 wt-ppm, an SiH group-content of less than 5x10¬16 molecules/cm¬3, a refractive index inhomogeneity, Δn, of less than 2 ppm, and a stress birefringence of less than 2 nm/cm. The procedure for the manufacture of a quartz glass blank comprises the manufacture of a first and a second quartz glass by flame hydrolysis of a Si-containing compound, wherein the first and second quartz glass differ in their OH-contents, characterized in that a mixed quartz glass with a mean OH-content in the range of 125 wt-ppm to 450 wt-ppm is generated by mixing the first quartz glass and the second quartz glass. The use of a quartz glass blank for the manufacture of a component for use in microlithography in combination with ultraviolet radiation of a wavelength of 250 nm or shorter is characterized in that a quartz glass with an OH-content is selected for use with ultraviolet radiation of a given pulse energy density, ε, of at least 0.005 mJ/cm¬2, the OH-content complying with the following dimensioning rule: C(oh)£wt-ppm|=1,7x10¬3xε¬0.4±50.
    • 目的:用于传输波长为250nm或更短波长的紫外线辐射的光学部件的石英玻璃坯料,微波平版印刷中的石英玻璃毛坯与波长为250nm或更短的紫外线辐射的组合以及程序 提供石英玻璃坯料的制造。 构成:在用于透射波长为250nm或更短的紫外线辐射的光学部件的石英玻璃坯料中,石英玻璃坯料的特征在于基本上不含氧缺陷部位的玻璃结构, 范围为0.1×10 16分子/ cm 3至4.0×10 16分子/ cm 3,OH含量为125重量ppm至450重量ppm,SiH基含量小于5×101- 16分子/ cm 3,折射率不均匀性Δn小于2ppm,应力双折射小于2nm / cm。 制造石英玻璃坯料的方法包括通过含Si化合物的火焰水解制造第一和第二石英玻璃,其中第一和第二石英玻璃的OH含量不同,其特征在于混合 通过混合第一石英玻璃和第二石英玻璃产生平均OH含量在125重量ppm至450重量ppm范围内的石英玻璃。 使用石英玻璃坯料制造用于微光刻的组件与波长为250nm或更短的紫外线辐射的组合的特征在于,选择具有OH-含量的石英玻璃用于紫外线辐射 给定的脉冲能量密度ε至少为0.005mJ / cm 2,符合以下尺寸规则的OH-含量:C(oh)£wt-ppm | = 1,7×10-3×ε-0.4±50。