会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 37. 发明公开
    • 레이저 다이오드 구동회로 및 그 제어방법과 레이저다이오드 구동용 반도체 집적회로
    • 激光二极管驱动电路及其控制方法,激光二极管驱动半导体集成电路
    • KR1020070027936A
    • 2007-03-12
    • KR1020050079911
    • 2005-08-30
    • 삼성전자주식회사
    • 박상열김관준김석훈
    • G11B7/126H01S5/068
    • H01S5/042
    • A laser diode driving circuit, a control method therefor, and a semiconductor IC for driving a laser diode are provided to simplify circuit composition and reduce the manufacturing cost of the circuit by composing the laser diode driving circuit for uniformly maintaining an emission beam of a high power laser by using a single power unit. A voltage level shifter(310) shifts a level of an output voltage of an analog signal processing unit to a predetermined level. A voltage adder(330) adds a voltage which is preset according to the record and reproduction of an optical disc to the shifted voltage. An amplifying unit(340) receives the added voltage, amplifies a current of a power unit, and outputs the amplified current to a laser diode(260). A MUX(350) applies a voltage according to the record and reproduction by a signal of a controller to the voltage adder.
    • 提供一种激光二极管驱动电路及其控制方法和用于驱动激光二极管的半导体IC,以通过组合激光二极管驱动电路来简化电路组成并降低电路的制造成本,以均匀地保持高的发射光束 功率激光器通过使用单个功率单元。 电压电平移位器(310)将模拟信号处理单元的输出电压的电平移动到预定电平。 电压加法器(330)将根据光盘的记录和再现预设的电压加到移位电压上。 放大单元(340)接收所加的电压,放大电源单元的电流,并将放大的电流输出到激光二极管(260)。 MUX(350)将根据记录和再现的电压通过控制器的信号施加到电压加法器。
    • 38. 发明公开
    • 전류 검출에 의한 리미터 회로를 채용한 전류-전압 변환및 증폭 회로
    • 通过电流检测采用限流电路的电流转换和放大电路,特别是通过检测输出电压的电流来限制电流流动相关的电流转换和放大电路
    • KR1020050023916A
    • 2005-03-10
    • KR1020030061480
    • 2003-09-03
    • 삼성전기주식회사
    • 하창우권경수박득희고주열
    • G11B7/126H01S5/068
    • H03F3/08
    • PURPOSE: A current-voltage converting and amplifying circuit adopting a limiter circuit by a current detection is provided to flow a limiter current for preventing saturation by detecting a current, thereby improving transient features of an RF waveform and an S/N(Signal to Noise) ratio. CONSTITUTION: A photo detection element(12) generates a current by receiving an optical signal. An amplifier(G1) receives the current, and amplifies the received current. An emitter follower(G2) is connected to an output of the amplifier(G1). An output buffer(G3) is connected to an output of the emitter follower(G2). A current detection limiter block(11) has an input end and an output end of a limiter current, is turned on when the current of the amplifier(G1) exceeds a predetermined threshold value, and flows the limiter current. A feedback resistor(Rf) is connected between an output of the amplifier(G1) and the photo detection element(12).
    • 目的:提供通过电流检测采用限幅电路的电流 - 电压转换和放大电路,以便通过检测电流来流过限制电流以防止饱和,从而改善RF波形的瞬态特征和S / N(信噪比 )比例。 构成:光检测元件(12)通过接收光信号产生电流。 放大器(G1)接收电流,并放大接收的电流。 射极跟随器(G2)连接到放大器(G1)的输出端。 输出缓冲器(G3)连接到射极跟随器(G2)的输出端。 当放大器(G1)的电流超过预定阈值时,具有输入端和限幅器电流的输出端的电流检测限制器块(11)导通,并流过限幅器电流。 反馈电阻(Rf)连接在放大器(G1)的输出端和光检测元件(12)之间。
    • 39. 发明授权
    • 반도체 레이저 소자의 제조 방법
    • 制造半导体激光器件的方法
    • KR100275770B1
    • 2001-01-15
    • KR1019930019475
    • 1993-09-23
    • 삼성전자주식회사
    • 김택
    • H01S5/068
    • PURPOSE: A method for manufacturing a semiconductor laser device is provided to facilitate diffusion control and to prevent efficiency degradation of the device in accordance with introduction of dopant of p-clad layer into an active layer by annealing the active layer into disordered state using laser. CONSTITUTION: On a first conductive semiconductor substrate(21) are successively deposited a first conductive clad layer(23), an active layer(24), a second conductive clad layer(25), an easy-conductive layer(26) and a cap layer(27) to form a laser oscillated layer. An impurity dispenser layer consisting of Si3N4 is formed on the laser oscillated layer. A laser beam is irradiated on a region of impurity dispenser layer excluding a stripe region so that a silicon atom in the impurity dispenser layer is diffused into the first conductive clad layer, the active layer, the second conductive clad layer, the easy-conductive layer and the cap layer to form a diffusion region. The impurity dispenser layer is removed to expose the cap layer. A metal electrode is formed under the substrate and on the cap layer.
    • 目的:提供一种制造半导体激光器件的方法,以便通过使用激光将有源层退火为无序状态,从而根据p型掺杂剂掺杂到有源层中来促进器件的扩散控制和效率降低。 构造:在第一导电半导体衬底(21)上依次沉积第一导电覆层(23),有源层(24),第二导电覆层(25),易导电层(26)和帽 层(27)以形成激光振荡层。 在激光振荡层上形成由Si 3 N 4组成的杂质分配层。 激光束被照射在杂质分配层的除条纹区域之外的区域上,使得杂质分配层中的硅原子扩散到第一导电覆层,有源层,第二导电覆层,易导电层 和盖层以形成扩散区域。 除去杂质分配器层以露出盖层。 金属电极形成在基板下方和盖层上。