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31. 发明授权

KR101561662B1 곡선형 리드선들을 가진 압전형 마이크로 스피커 및 그 제조 방법 有权
标题翻译：具有弯曲引线的压电微型扬声器及其制造方法
公开(公告)号：KR101561662B1
公开(公告)日：2015-10-21
申请号：KR1020090092470
申请日：2009-09-29
申请人： 삼성전자주식회사
发明人： 김동균 , 정병길 , 정석환 , 황준식
IPC分类号： H04R17/00 , H04R31/00
CPC分类号： H04R17/00 , H04R2201/003 , H04R2307/025 , H04R2499/11 , Y10T29/42 , Y10T29/49005
摘要： 압전형마이크로스피커및 그제조방법이개시된다. 개시된압전형마이크로스피커는, 캐비티를가진기판과, 캐비티를덮도록기판상에형성되는다이어프램을포함한다. 다이어프램은캐비티의중심부에위치하는제1영역에형성된제1진동막과, 캐비티의가장자리부에위치하는제2영역에형성되며제1진동막과는다른물질로이루어진제2진동막을포함한다. 제1진동막상에는제1전극층, 압전층및 제2전극층을포함하는압전구동부가형성된다. 제1전극층과제2전극층에는제2영역을가로지르는제1리드선과제2리드선이각각연결되며, 제1리드선과제2리드선은압전구동부의중심을기준으로서로대칭되게곡선형태로형성된다.

32. 发明公开

KR1020140028530A 초음파 변환기 및 그 제조방법 审中-实审
标题翻译：超声波传感器及其制造方法
公开(公告)号：KR1020140028530A
公开(公告)日：2014-03-10
申请号：KR1020120095002
申请日：2012-08-29
申请人： 삼성전자주식회사
发明人： 홍석우 , 김동균 , 정병길 , 정석환
IPC分类号： H04R19/00 , H01L29/84 , G01N29/24
CPC分类号： B81B3/0027 , A61B8/4483 , B06B1/0292 , B06B2201/76 , B81C1/00158
摘要： Disclosed are an ultrasonic converter and a manufacturing method for the same. The disclosed ultrasonic converter includes a first electrode layer covering an inner wall and the upper part of a via hole penetrating a conductive substrate and a membrane and forming the same plane as the upper surface of the membrane; a second electrode layer formed on the lower surface of the conductive substrate to be separated from the first electrode layer; and an upper electrode arranged on the upper surface of the membrane to be in contact with the upper surface of the first electrode layer.
摘要翻译：公开了一种超声波转换器及其制造方法。所公开的超声波转换器包括覆盖内壁的第一电极层和贯穿导电基板和膜的通孔的上部，并形成与膜的上表面相同的平面; 形成在所述导电基板的下表面上以与所述第一电极层分离的第二电极层; 以及布置在膜的上表面上以与第一电极层的上表面接触的上电极。

33. 发明公开

KR1020120066503A 초음파 변환기의 셀, 채널 및 이를 포함하는 초음파 변환기 有权
标题翻译：超声波传感器的细胞和通道，包括SAMES的超声波传感器
公开(公告)号：KR1020120066503A
公开(公告)日：2012-06-22
申请号：KR1020100127871
申请日：2010-12-14
申请人： 삼성전자주식회사
发明人： 김동균 , 신형재 , 정석환 , 정병길
IPC分类号： H04R17/00 , G01N29/24
CPC分类号： A61B8/44 , A61B8/14 , A61B8/4477 , A61B8/4483 , B06B1/02 , B06B1/0292 , B06B3/00 , G01S15/8906 , H01L41/00
摘要： PURPOSE: A cell and a channel of an ultrasonic transducer and an ultrasonic transducer including the same are provided to increase electrostatic force and a volume change amount in a cell of an ultrasonic transducer which is started by vibrating a thin film to a vertical direction to a substrate. CONSTITUTION: A cell(100) of an ultrasonic transducer includes a substrate(10), a supporting part(40) prepared on the substrate, a thin film(50) separated from the supporting part and the substrate, a connection part(70) connecting the thin film and the supporting part. The cell of the ultrasonic transducer further includes a first electrode(20) preparing on the substrate and an insulating layer(30) preparing on the first electrode. The cell of the ultrasonic transducer further include a second electrode(60) prepared on the thin film and a power supply line(80) connected to the second electrode. A first electrode and a second electrode can form a capacitor.
摘要翻译：目的：提供超声波换能器的单元和通道以及包括该超声波换能器的超声波换能器，以增加通过将薄膜振动到垂直方向而开始的超声换能器的单元中的静电力和体积变化量基质。构成：超声波换能器的电池（100）包括基板（10），在基板上制备的支撑部（40），与支撑部和基板分离的薄膜（50），连接部（70）连接薄膜和支撑部件。超声波换能器的电池还包括在基板上制备的第一电极（20）和在第一电极上制备的绝缘层（30）。超声波换能器的电池还包括在薄膜上制备的第二电极（60）和连接到第二电极的电源线（80）。第一电极和第二电极可以形成电容器。

34. 发明公开

KR1020110029812A 환형 고리 형상의 진동막을 가진 압전형 마이크로 스피커 및 그 제조 방법 有权
标题翻译：具有环形环形振动膜的压电微型扬声器及其制造方法
公开(公告)号：KR1020110029812A
公开(公告)日：2011-03-23
申请号：KR1020090087641
申请日：2009-09-16
申请人： 삼성전자주식회사
发明人： 정병길 , 김동균 , 정석환 , 황준식
IPC分类号： H04R17/00 , H04R7/02 , H04R31/00
CPC分类号： H04R17/00 , Y10T29/42 , Y10T29/49005
摘要： PURPOSE: A piezoelectric micro speaker with an annular ring-shape vibrating membrane and a method for manufacturing the same are provided to increase displacement of the first vibrating membrane, thereby increasing sound output due to vibration of the first vibrating membrane. CONSTITUTION: A substrate includes a cavity(112) penetrated in a thickness direction. A diaphragm(120) is formed on the substrate to cover the cavity. The diaphragm is formed in the first area of the center part of the cavity. The diaphragm comprises the first vibrating membranes with an annular ring-shape which are arranged in a concentric shape. A piezoelectric driving unit(130) vibrates the first vibrating membranes. The piezoelectric driving unit comprises the first electrode layer(132), a piezoelectric layer(134), and the second electrode layer(136).
摘要翻译：目的：提供具有环形环形振动膜的压电微型扬声器及其制造方法，以增加第一振动膜的位移，从而增加由于第一振动膜的振动引起的声音输出。构成：衬底包括沿厚度方向穿透的空腔（112）。在基板上形成隔膜（120）以覆盖空腔。隔膜形成在空腔的中心部分的第一区域中。隔膜包括具有环形环的第一振动膜，其以同心形状布置。压电驱动单元（130）使第一振动膜振动。压电驱动单元包括第一电极层（132），压电层（134）和第二电极层（136）。

35. 发明公开

KR1020110023535A 피스톤 다이어프램을 가진 압전형 마이크로 스피커 및 그 제조 방법 有权
标题翻译：具有活性膜片的压电微型扬声器及其制造方法
公开(公告)号：KR1020110023535A
公开(公告)日：2011-03-08
申请号：KR1020090081487
申请日：2009-08-31
申请人： 삼성전자주식회사
发明人： 황준식 , 김동균 , 정석환 , 정병길
IPC分类号： H04R17/00 , H04R7/02 , H04R31/00
CPC分类号： H04R17/00 , H04R31/003 , H04R2201/003 , H04R2440/07
摘要： PURPOSE: A piezoelectric micro speaker with a piston diaphragm and a manufacturing method thereof are provided to arrange a piston diaphragm in a cavity, thereby transferring the maximum displacement of a vibration diaphragm. CONSTITUTION: A substrate(110) has a cavity(112) penetrated in a thickness direction. A vibration diaphragm(122) is formed on the substrate. The vibration diaphragm covers the center of the cavity. A piezoelectric driving unit(120) is formed on the vibration diaphragm to vibrate the vibration diaphragm. A piston diaphragm(130) is arranged in the cavity. The piston diaphragm performs a piston movement by vibration of the vibration diaphragm. A piston bar(132) is arranged in the central part of the cavity. The piston bar connects the piston diaphragm with the vibration diaphragm.
摘要翻译：目的：提供具有活塞隔膜的压电微型扬声器及其制造方法，以将活塞隔膜设置在空腔中，从而传递振动膜片的最大位移。构成：衬底（110）具有沿厚度方向穿透的空腔（112）。振动膜（122）形成在基板上。振动膜片覆盖空腔的中心。压电驱动单元（120）形成在振动膜上以使振动膜振动。活塞隔膜（130）布置在空腔中。活塞隔膜通过振动膜片的振动进行活塞运动。活塞杆（132）布置在空腔的中心部分。活塞杆将活塞隔膜与振动隔膜连接起来。

36. 发明授权

KR100643769B1 ＳＯＩ 웨이퍼를 사용한 캡 웨이퍼 제조방법, 제조된 캡웨이퍼를 사용한 반도체 칩 제조방법 및 제조된 반도체 칩 失效
标题翻译： SOI应用程序，用户指南，附录，附录，附录，附录，附录，说明书，附录，附图及附图中的详细说明
公开(公告)号：KR100643769B1
公开(公告)日：2006-11-10
申请号：KR1020050064138
申请日：2005-07-15
申请人： 삼성전자주식회사
发明人： 임지혁 , 문창렬 , 함석진 , 정병길 , 조준석 , 김영금
IPC分类号： H01L27/12 , H01L23/52
摘要： A cap wafer manufacturing method, a semiconductor chip manufacturing method using a cap wafer and a semiconductor chip thereby are provided to simplify manufacturing processes and to reduce fabrication costs by acquiring easily through holes using an SOI wafer. An SOI wafer comprises an upper silicon layer(210), an insulating layer(220) and a lower silicon layer(230). A plurality of through holes(240) are formed on the resultant structure by etching selectively the upper silicon layer. The plurality of through holes are used for exposing the insulating layer to the outside. A plating process is performed on the through holes. The thickness of the upper silicon layer is in a predetermined range of 40 to 50 mum.
摘要翻译：提供帽晶片制造方法，使用帽晶片和半导体芯片的半导体芯片制造方法，以通过使用SOI晶片容易获得通孔来简化制造工艺并降低制造成本。 SOI晶片包括上硅层（210），绝缘层（220）和下硅层（230）。通过选择性地蚀刻上硅层而在所得结构上形成多个通孔（240）。多个通孔用于将绝缘层暴露于外部。在通孔上执行电镀工艺。上硅层的厚度在40至50μm的预定范围内。

37. 发明授权

KR100446505B1 트리 구조의 홈들을 구비한 블록과 이를 이용한 다심광섬유 블록 및 그 정렬 방법 有权
标题翻译： 트리구조의홈을을구비한블록과이를이용한다심광섬유블록및그정렬방
公开(公告)号：KR100446505B1
公开(公告)日：2004-09-04
申请号：KR1020020006057
申请日：2002-02-02
申请人： 삼성전자주식회사
发明人： 송현채 , 정병길
IPC分类号： G02B6/24
CPC分类号： G02B6/3636 , G02B6/3652 , G02B6/3676 , G02B6/368 , G02B6/3839
摘要： Disclosed is a multi-core optical fiber block having a block base and a cover, each of which is formed having a tree-structured groove array, so as to allow respective optical fiber arrays to be seated in the corresponding respective groove arrays. The groove arrays comprises first sub-grooves having depth and pitches decreasing in magnitude as approaching from an input end of the block to an output end, and second sub-grooves formed alternately between the first sub-grooves and having the depths and pitches increasing in magnitude as approaching from the input end of the block to the output.
摘要翻译：公开了一种多芯光纤模块，其具有块基座和盖子，其中每一个都具有树形结构的槽阵列，从而允许相应的光纤阵列安放在相应的槽阵列中。凹槽阵列包括第一子凹槽和第二子凹槽，第一子凹槽的深度和节距从块的输入端到输出端的大小逐渐减小，第二子凹槽交替形成在第一子凹槽之间，并且深度和节距增加从块的输入端到输出接近的幅度。＆lt;图像＆GT;

38. 发明授权

KR100393622B1 평면 도파로 소자 모듈 有权
标题翻译： 평면로소자모
公开(公告)号：KR100393622B1
公开(公告)日：2003-08-02
申请号：KR1020010061661
申请日：2001-10-06
申请人： 삼성전자주식회사
发明人： 김태훈 , 류민성 , 정병길
IPC分类号： G02B6/13
摘要： PURPOSE: A planar lightwave circuit module is provided to use an adhesive assistant layer of inorganic oxide material to coat each optical fiber block and the planar lightwave circuit. CONSTITUTION: According to the planar lightwave circuit module, at least more than one optical fiber block comprises at least more than one groove for optical fiber mounting formed on a bottom plate of a semiconductor material and a top plate of a glass material adhered to the bottom plate to fix an optical fiber. And a planar lightwave circuit comprises a semiconductor substrate, and a core layer forming an optical path by being stacked on the semiconductor substrate and a clad layer surrounding the core layer.
摘要翻译：目的：提供平面光波电路模块，以使用无机氧化物材料的粘合剂辅助层来涂覆每个光纤模块和平面光波电路。组成：根据平面光波电路组件，至少一个以上的光纤块包括至少一个以上形成在半导体材料的底板上的用于光纤安装的凹槽和粘附到底部的玻璃材料的顶板板来固定光纤。并且，平面型光波回路具有半导体基板和在半导体基板上层叠形成光路的芯层和包围该芯层的包层。

39. 发明授权

KR102155695B1 전기 음향 변환기 有权
公开(公告)号：KR102155695B1
公开(公告)日：2020-09-21
申请号：KR1020140016281
申请日：2014-02-12
申请人： 삼성전자주식회사
发明人： 홍석우 , 신형재 , 심동식 , 정병길 , 정석환
IPC分类号： H04R19/00 , H01L29/84

40. 发明授权

KR101919013B1 미세가공 초음파 변환기 어레이 有权
公开(公告)号：KR101919013B1
公开(公告)日：2019-02-08
申请号：KR1020120101804
申请日：2012-09-13
申请人： 삼성전자주식회사
发明人： 정병길
IPC分类号： H04R17/00 , A61B8/00 , G01N29/24

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