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21. 发明公开

KR1020040054441A 반도체 소자의 버퍼 절연막 형성 방법 및 이를 이용한박막 트랜지스터 제조 방법 无效
标题翻译：用于形成半导体器件的缓冲层绝缘层的方法和使用其制造薄膜晶体管的方法
公开(公告)号：KR1020040054441A
公开(公告)日：2004-06-25
申请号：KR1020020081480
申请日：2002-12-18
申请人： 한국전자통신연구원
发明人： 손충용 , 김용해 , 이진호 , 고영욱 , 정중희
IPC分类号： H01L29/786
CPC分类号： H01L21/0268 , H01L21/02686 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78606 , H01L29/78675
摘要： PURPOSE: A method for forming a buffer insulating layer of a semiconductor device and a method for manufacturing a TFT(Thin Film Transistor) using the same are provided to be capable of minimizing the heat transfer to a substrate, improving the electric charge mobility of the semiconductor device, and enhancing productivity. CONSTITUTION: A silicon nitride layer(302) is formed on a substrate(301). A porous silica layer(303) is formed on the silicon nitride layer. A silicon oxide layer(304) is formed on the porous silica layer. Preferably, the substrate is one selected from a group consisting of a glass substrate, a silicon wafer, a plastic substrate, or a predetermined plastic substrate attached with an inorganic substrate.
摘要翻译：目的：提供一种用于形成半导体器件的缓冲绝缘层的方法和使用该半导体器件的TFT（薄膜晶体管）的制造方法，其能够最小化对衬底的热传递，从而提高半导体器件，并提高生产率。构成：在衬底（301）上形成氮化硅层（302）。在氮化硅层上形成多孔二氧化硅层（303）。在多孔二氧化硅层上形成氧化硅层（304）。优选地，所述基板是选自玻璃基板，硅晶片，塑料基板或附着有无机基板的规定的塑料基板的基板。

22. 发明公开

KR1020040053433A 전계 방출을 위한 카본 나노튜브 에미터를 제조하는 방법 失效
标题翻译：用于制造用于发射电场的碳纳米管发射体的方法
公开(公告)号：KR1020040053433A
公开(公告)日：2004-06-24
申请号：KR1020020079987
申请日：2002-12-14
申请人： 한국전자통신연구원
发明人： 김봉철 , 송윤호 , 이진호 , 황치선 , 정중희
IPC分类号： H01J1/304 , H01J9/02 , C01B31/02 , B82Y40/00
摘要： PURPOSE: A method is provided to effectively prevent a carbon nanotube film from being stripped off during surface treatment of the carbon nanotube film by increasing the strength of the carbon nanotube film. CONSTITUTION: A method comprises a step of producing a paste by mixing powder of a carbon nanotube(410) and a silicon based polymer(450); a step of arranging a cathode(300); a step of forming a carbon nanotube film(400) by depositing the paste on the cathode; a step of hardening the silicon based polymer by heat treating the carbon nanotube film; and a step of guiding the end of the carbon nanotube in such a manner that the end is exposed from the surface of the carbon nanotube film, by surface treating the carbon nanotube film.
摘要翻译：目的：提供碳纳米管膜的强度来有效地防止在碳纳米管膜的表面处理期间剥离碳纳米管膜的方法。构成：一种方法包括通过混合碳纳米管（410）和硅基聚合物（450）的粉末来生产糊料的步骤; 设置阴极（300）的步骤; 通过在阴极上沉积膏形成碳纳米管膜（400）的步骤; 通过热处理碳纳米管膜来硬化硅基聚合物的步骤; 以及通过对碳纳米管膜进行表面处理，以从碳纳米管膜的表面露出端部的方式引导碳纳米管的端部的步骤。

23. 发明公开

KR1020040024398A 능동 구동형 유기 이엘 다이오드 디스플레이 패널 회로 失效
标题翻译：有源矩阵有机发光二极管显示屏面板电路
公开(公告)号：KR1020040024398A
公开(公告)日：2004-03-20
申请号：KR1020020055995
申请日：2002-09-14
申请人： 한국전자통신연구원
发明人： 정중희 , 황치선 , 송윤호 , 이진호
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0465 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233 , G09G2320/043
摘要： PURPOSE: A panel circuit of an active matrix organic light emission diode display is provided to compensate the threshold voltage by not reducing the number of transistors in the pixels and not reducing the emission area of the pixels, thereby improving the yield thereof. CONSTITUTION: A panel circuit of an active matrix organic light emission diode display includes a plurality of pixels and a threshold voltage compensation circuit(310). Each of the pixels is provided with an addressing transistor, a signal storage transistor and an organic light emission diode. The threshold voltage compensation circuit(310) is installed outside of the pixel. And, the video signal inputted through the data line(301) is transmitted to the pixel through the threshold voltage compensation circuit(310).
摘要翻译：目的：提供有源矩阵有机发光二极管显示器的面板电路，通过不减少像素中的晶体管数量并且不减少像素的发射面积来补偿阈值电压，从而提高其产量。构成：有源矩阵有机发光二极管显示器的面板电路包括多个像素和阈值电压补偿电路（310）。每个像素设置有寻址晶体管，信号存储晶体管和有机发光二极管。阈值电压补偿电路（310）安装在像素的外部。并且，通过数据线（301）输入的视频信号通过阈值电压补偿电路（310）发送到像素。

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