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    • 11. 发明公开
    • 탄성에너지를 고려한 캔틸레버 멤스 구조 해석 방법
    • 弹性能的考虑结构
    • KR1020080075952A
    • 2008-08-20
    • KR1020070015176
    • 2007-02-14
    • 인하대학교 산학협력단
    • 원태영김한건신형철이종호
    • B81C1/00B81B3/00
    • B81C1/0015B81B3/0035B81B2203/0118
    • A method for analyzing a MEMS structure of a cantilever structure taking into account elastic energy is provided to manufacture the cantilever made of a Tb-Fe film and an Sm-Fe film used to reduce a tolerance range by calculating a magnetostrictive coefficient based on a theory reflecting the elastic energy of a magnetostrictive thin film. A trench is formed on a polymide substrate to form a Tb-Fe thin film or an Sm-Fe thin film on the substrate. A silicon layer having crystal orientation is formed on the polymide substrate. The polymide substrate is obtained through an existing wafer bonding technology using an oxide layer as a contact surface. An area for the trench is defined through a lithography process. The trench is formed by etching an insulating layer such that the polymid substrate is exposed.
    • 提供了一种考虑到弹性能分析悬臂结构的MEMS结构的方法,以制造由Tb-Fe膜制成的悬臂和用于通过基于理论计算磁致伸缩系数来减小公差范围的Sm-Fe膜 反映了磁致伸缩薄膜的弹性能。 在多晶硅基板上形成沟槽,以在衬底上形成Tb-Fe薄膜或Sm-Fe薄膜。 在聚酰亚胺基板上形成具有晶体取向的硅层。 通过使用氧化物层作为接触表面的现有晶片接合技术获得多晶硅基板。 通过光刻工艺定义沟槽的一个区域。 通过蚀刻绝缘层形成沟槽,使得多晶硅基板被暴露。
    • 14. 发明公开
    • 집적회로 배선 간의 크로스 톡 해석 방법
    • 分析半导体集成电路互连线之间的交叉点的方法
    • KR1020080000705A
    • 2008-01-03
    • KR1020060058382
    • 2006-06-28
    • 인하대학교 산학협력단
    • 원태영신우정
    • G06F9/455H01L21/3065
    • G06F17/5009H01L21/3065
    • A method for analyzing cross-talk between wirings of an IC is provided to offer a data format fit for writing an optical penetration analysis result of a wiring element display device of the semiconductor IC to a text file, offer a 2D(Dimensional) graphic output system/method for a view angle property, and offer efficient analysis convenience by applying an output result to tool sets and a controlling module. An ADI(Alternating Direction Implicit)-finite division time section for analyzing electromagnetic effectively between lines is applied. A short boundary condition is applied to remove a reflection wave of an advancing pulse at a boundary surface. A change of time increment is calculated by comparing the time increment with surrounding data.
    • 提供一种用于分析IC的布线之间的串扰的方法,以提供适合于将半导体IC的布线元件显示装置的光学穿透分析结果写入文本文件的数据格式,提供2D(尺寸)图形输出 用于视角属性的系统/方法,并通过将输出结果应用于工具集和控制模块来提供有效的分析方便性。 应用ADI(交替方向隐式) - 有限线分割时间段,用于在线间有效分析电磁场。 施加短边界条件以去除边界表面上的前进脉冲的反射波。 通过将时间增量与周围数据进行比较来计算时间增量的变化。
    • 15. 发明公开
    • 비이엠 수치 해석 방법
    • 边界元素方法
    • KR1020060089272A
    • 2006-08-09
    • KR1020050009865
    • 2005-02-03
    • 인하대학교 산학협력단
    • 원태영정찬용
    • G06F17/10
    • G06F17/18
    • 본 발명은 경계 요소법을 이용하여 알고리즘 수행시 계산 속도의 향상을 위해서 수치적 분간 이전에 계산된 거리 함수 데이터를 호출하여 신속한 계산을 하는 알고리즘 방법으로써, 경계 요소법을 이용하여 구조체의 전기적, 기계적인 해석을 하는데 많은 노드(node) 또는 가우스포인트(Gauss point)가 필요할 때 더욱 신속한 계산을 할 수 있는 알고리즘 방법을 제공한다. 특히, 수치적분 계산전 거리함수 데이터를 라이브러리 함수로 저장하는 단계에서 저장된 데이터 값을 행렬 계산시 효과적인 수치적분을 수행할 수 있고, 최종적으로 내·외부(in/external) 점의 특성 해석 시에도 저장된 데이터 값을 호출하여 신속하게 계산이 가능하게 하는 방법을 제공한다.
      경계요소법, 노드, 요소, 원점, 경계점, 가우스포인트, 내·외부점, 특이성.
    • 16. 发明公开
    • 카이럴 도펀트를 갖는 액정 모드의 전산모사 방법
    • 液晶显示器与笛卡尔计算方法
    • KR1020100038561A
    • 2010-04-15
    • KR1020080097578
    • 2008-10-06
    • 인하대학교 산학협력단
    • 이완인김용주원태영
    • G02F1/1337G02F1/1343
    • G02F1/1337G02F1/134363G02F2201/123
    • PURPOSE: A computer simulation method of a liquid crystal mode having chiral dopants is provided to control a polar angle, response speed of the liquid crystal, and transmittance by controlling a pattern of a pixel electrode according to the properties of a liquid crystal display device. CONSTITUTION: A computer simulation method of a liquid crystal mode having chiral dopants comprises the following steps: calculating the potential distribution of a pair of electrode structures about applied voltage; calculating rotational symmetry of a negative liquid crystal in which chiral dopants are added; calculating a radial slope alignment state; and defining a liquid crystal domain and calculating molecular motion of the liquid crystal.
    • 目的:提供具有手性掺杂剂的液晶模式的计算机模拟方法,以通过根据液晶显示装置的性质控制像素电极的图案来控制极角,液晶的响应速度和透射率。 构成:具有手性掺杂剂的液晶模式的计算机模拟方法包括以下步骤:计算一对电极结构对施加电压的电位分布; 计算添加手性掺杂剂的负极液晶的旋转对称性; 计算径向斜率对准状态; 并限定液晶畴并计算液晶的分子运动。
    • 19. 发明公开
    • 개구율이 향상된 피브이에이 모드 반투과형 액정표시장치
    • 具有PVA模式的高孔径比转移液晶显示器
    • KR1020090114488A
    • 2009-11-04
    • KR1020080040148
    • 2008-04-30
    • 인하대학교 산학협력단
    • 원태영양승수이완인김용주
    • G02F1/1343G02F1/1335G02F1/1337
    • G02F1/133555G02F1/133528G02F1/1343G02F1/136286G02F2001/133638
    • PURPOSE: A PVA(Patterned Vertical Alignment) mode semitransparent LCD device in which an aperture ratio is improved is provided to improve the optical efficiency by arranging a data line within a unit pixel at the center of a pixel and setting up a reflective region on the data line. CONSTITUTION: A common electrode and a pixel electrode(410) within the unit pixel of a PVA mode semitransparent LCD device are rotated at 90 degrees and arranged. A data line is moved to the center within the unit pixel. The common electrode and pixel electrode have a slit shape. A reflective plate(440) is formed on the data line in order to form a reflective region. A broadband half-wavelength plate is formed in a polarizing plate of the PVA mode semitransparent LCD device by using a quarter wavelength plate and a half-wavelength plate. The ON/OFF states of a transmission region and the reflective region coincide with each other.
    • 目的:提供孔径比改善的PVA(图案垂直对准)模式半透明LCD装置,以通过将数据线布置在像素中心的单位像素内并在像素的中心设置反射区域来提高光学效率 数据线。 构成:PVA模式半透明LCD装置的单位像素内的公共电极和像素电极(410)以90度旋转并布置。 数据线移动到单位像素内的中心。 公共电极和像素电极具有狭缝形状。 在数据线上形成反射板(440)以形成反射区域。 宽带半波长板通过使用四分之一波长板和半波长板形成在PVA模式半透明LCD器件的偏振片中。 透射区域和反射区域的ON / OFF状态彼此一致。
    • 20. 发明公开
    • 마이크로 구조물 제작을 나노 임프린트 리소그래피 공정기법의 몰드 구조 형성 방법
    • 纳米显微结构的方法
    • KR1020090061771A
    • 2009-06-17
    • KR1020070128707
    • 2007-12-12
    • 인하대학교 산학협력단
    • 원태영박순열
    • H01L21/027B82Y40/00
    • G03F7/0015B29C33/3842B82Y40/00G03F7/0002Y10S977/887
    • A method of nano imprinting for microstructures is provided to completely correspond to the microstructures of photoresist in the intaglio parts of the mold and to prevent the effect of external environment. The method of nano imprinting for microstructures comprises the step of forming holes and the step of performing imprint. The step of forming the holes is performed in order to form holes on the concave parts of the mold(500). The concave part of the mold is exposed to outside. The step of performing the imprint is performed in order to transcribe the concave parts of the mold on the semiconductor substrate. The semiconductor substrate has photoresist. The concave part of the molds is imprinted on photoresist. In this case, the hole of the molds prevent the generation of the vacancy between the concave parts of the mold and microstructures of photoresist.
    • 提供了用于微结构的纳米压印方法,以完全对应于模具的凹版部分中的光致抗蚀剂的微观结构并防止外部环境的影响。 纳米压印微结构的方法包括形成孔的步骤和进行压印的步骤。 执行形成孔的步骤,以在模具(500)的凹部上形成孔。 模具的凹部暴露在外面。 执行印记的步骤是为了转录半导体衬底上的模具的凹部而进行的。 半导体衬底具有光致抗蚀剂。 模具的凹部印在光致抗蚀剂上。 在这种情况下,模具的孔防止在模具的凹部和光致抗蚀剂的微结构之间产生空位。